MRF6S9130HSR3 vs MRF6S9160HSR3 Comparación
Comparación detallada lado a lado de MRF6S9130HSR3 por NXP Semiconductors y MRF6S9160HSR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ ActivoNXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Última compraComparación de especificaciones
| Parámetro | MRF6S9130HSR3 | MRF6S9160HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $65,00 | $92,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Status | Active | — |
| Tipo de transistor | Lateral N-Channel RF Power MOSFET (LDMOS) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Frequency | 880 MHz | 865 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Max | 68 V | — |
| Drain Current (Id) Max | [DATA_NEEDED: maximum pulsed drain current] | — |
| Typical Quiescent Current (Idq) | 950 mA | — |
| Drain-Source On Resistance (Rds(on)) | [DATA_NEEDED: Rds(on) value] | — |
| Output Power (Pout) Avg | 27 W (N-CDMA single-carrier) | — |
| Power Gain (Gps) | 19.2 dB typical | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency figure] | 31% typical at 880 MHz |
| Supply Voltage (Vdd) Recommended | 28 V | — |
| Encapsulado / Carcasa | NI-780S (CASE 465-06, Style 1) ceramic flange | — |
| Tipo de montaje | Chassis / flange mount with screw-down | Flange / Chassis Mount with screw holes |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj operating range] | — |
| Storage Temperature Range | [DATA_NEEDED: Tstg range] | — |
| Recuento de pines | 3 | — |
| Style | Style 1 | — |
| Technology | LDMOS (laterally diffused MOS) | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Packing | Tape & Reel (HSR3 suffix) | — |
| Primary Applications | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers | — |
| Application | — | RF Power Amplifier |
| Test Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| Power Gain | — | 20.9 dB typical at 880 MHz |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Encapsulado | — | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |