MRF8S18120HSR3 vs MRF8S18120HR3 Comparación
Comparación detallada lado a lado de MRF8S18120HSR3 por NXP Semiconductors y MRF8S18120HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS
MRF8S18120HSR3 ✓ ActivoNXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF8S18120HSR3 | MRF8S18120HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $65,00 | $54,20 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S18120HSR3 | MRF8S18120HR3 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (Max) | 65 V | — |
| Test Drain Voltage | 28 V | — |
| Test Quiescent Current (IDQ) | 800 mA | — |
| Operating Frequency | 1805 MHz to 1880 MHz | — |
| Center Frequency | 1.81 GHz | — |
| Output Power (CW) | 72 W | 72 W |
| Power Gain (Typ) | 18.2 dB | — |
| Drain Current (Test) | 800 mA | — |
| Package Type | NI-780S | — |
| Estilo de montaje | Surface Mount (ceramic flange) | — |
| Operating Class | Class AB / Class C | — |
| Application | GSM / GSM EDGE cellular base station power amplifiers | — |
| Estado RoHS | Compliant | Compliant per NXP product page |
| Frequency Range | — | 1805 to 1880 MHz |
| Power Gain (typ) | — | 18.2 dB at 1.81 GHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 800 mA |
| Drain Current Rating | — | 10 uA (leakage spec entry per datasheet) |
| Operating Mode | — | Class AB, Class C |
| Encapsulado | — | NI-780H (3-pin ceramic, flangeless) |
| Tipo de montaje | — | Surface Mount / Screw-down heatsink |
| Target Application | — | GSM, GSM EDGE base station PA |