MSP430A002IPM vs MSP430F248TPM Comparación
Comparación detallada lado a lado de MSP430A002IPM por Texas Instruments y MSP430F248TPM por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
MSP430A002IPM - 16-Bit 8MHz MCU 32KB Flash | Texas Instruments
MSP430A002IPM ✓ ActivoTexas Instruments
MSP430F248TPM - 16MHz 48KB MCU 12-bit ADC | Texas Instruments
MSP430F248TPM ✓ ActivoComparación de especificaciones
| Parámetro | MSP430A002IPM | MSP430F248TPM |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Microcontrollers | Microcontrollers |
| Estado del ciclo de vida | Activo | Activo |
| Product Type | 16-bit mixed-signal microcontroller | — |
| Core Architecture | MSP430 RISC | — |
| Clock Speed | 8 MHz | — |
| Flash Program Memory | 32 KB (32K × 8 + 256 bytes) | — |
| RAM | 1 KB | — |
| Supply Voltage Range | 1.8 V to 3.6 V | 1.8 V to 3.6 V |
| ADC Resolution | 12-bit | 12-bit |
| USART Interfaces | 2 | — |
| I/O Ports | 48 | — |
| Encapsulado | 64-LQFP (10 mm × 10 mm) | 64-pin LQFP (PM), 10 mm × 10 mm |
| Terminal Count | 64 | — |
| Tipo de montaje | Surface mount | Surface mount |
| Temperature Grade | Industrial | — |
| Interface Functions | Asynchronous UART or synchronous SPI | — |
| Series | MSP430x1xx | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| REACH Status | [DATA_NEEDED: REACH status] | [DATA_NEEDED: REACH status] |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Pricing | [DATA_NEEDED: distributor unit pricing] | — |
| CPU Frequency | — | 16 MHz |
| Architecture | — | 16-bit RISC |
| Flash Memory | — | 48 KB plus 256 B |
| SRAM | — | 4 KB |
| Comparator | — | Yes |
| USCI Interfaces | — | 2 |
| Communication Interfaces | — | I2C, SPI, UART |
| Hardware Multiplier | — | Yes |
| Active Current | — | 270 µA at 1 MHz, 2.2 V |
| Standby Current | — | 0.3 µA in VLO |
| Off Current | — | 0.1 µA with RAM retention |
| Wake-Up Time | — | Less than 1 µs from standby |
| Temperatura de funcionamiento | — | -40 °C to +105 °C |