MT25QU01GBBB8E12-0AUT vs MT29F4G01ABBFD12-AUT:F Comparación
Comparación detallada lado a lado de MT25QU01GBBB8E12-0AUT por Micron Technology y MT29F4G01ABBFD12-AUT:F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron
MT25QU01GBBB8E12-0AUT ✓ ActivoMicron Technology
MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron
MT29F4G01ABBFD12-AUT:F ✓ ActivoComparación de especificaciones
| Parámetro | MT25QU01GBBB8E12-0AUT | MT29F4G01ABBFD12-AUT:F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | EEPROM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $7,10 | $1,58 |
| Tipo de memoria | NOR Flash, Serial (SPI) | FLASH - NAND (SLC) Memory IC |
| Density | 1 Gbit (128 MB) | — |
| Organización de memoria | x1 / x2 / x4 (I/O width) | — |
| Tensión de alimentación | 1.8 V | [DATA_NEEDED: VCC range] |
| Interfaz | SPI, Dual SPI, Quad SPI | SPI |
| Max Clock Frequency | 133 MHz | [DATA_NEEDED: SPI clock frequency] |
| Access Time | 6 ns | — |
| Temperatura de funcionamiento | -40C to +125C | [DATA_NEEDED: temperature range] |
| Encapsulado | 24-T-PBGA (6x8 mm) | TBGA (63-ball, per Micron serial NAND family) |
| FBGA Code | RW320 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AUT grade, :F automotive suffix |
| Write Protection | Hardware write protection; Software write protection; Write enable latch | — |
| Product Longevity Program | No | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant (lead-free :F suffix) |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: moisture sensitivity level] |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| Tamaño de memoria | — | 4 Gbit (512 MB) |
| Cell Type | — | SLC (Single-Level Cell) |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| On-Die ECC | — | Yes (ECD feature of serial NAND family) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |