MT40A256M16GE-075E:B vs K4A4G165WD-BCTD Comparación
Comparación detallada lado a lado de MT40A256M16GE-075E:B por Micron Technology y K4A4G165WD-BCTD por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ ActivoSamsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ ActivoComparación de especificaciones
| Parámetro | MT40A256M16GE-075E:B | K4A4G165WD-BCTD |
|---|---|---|
| Marca | Micron Technology | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,95 | $19,00 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Tamaño de memoria | 4 Gbit | — |
| Organización de memoria | 256M x 16 | 256M x 16 |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Velocidad de datos | 2666 MT/s (DDR4-2666) | 2666 Mbps/pin (-BCTD speed grade) |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| Encapsulado | 96-FBGA (9 x 14 mm) | 96-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range for standard grade] | 0C to +85C (commercial) |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Core Supply (VPP) | — | 2.5 V |
| Interfaz | — | SSTL-12 |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes (external RZQ resistor) |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |
| Estado RoHS | — | [DATA_NEEDED: RoHS status] |