MT40A512M8RH-075E:B vs K3LK4L40DM-BGCT Comparación
Comparación detallada lado a lado de MT40A512M8RH-075E:B por Micron Technology y K3LK4L40DM-BGCT por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ ActivoSamsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ ActivoComparación de especificaciones
| Parámetro | MT40A512M8RH-075E:B | K3LK4L40DM-BGCT |
|---|---|---|
| Marca | Micron Technology | Samsung Electronics |
| Categoría | Memory ICs | DRAM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,15 | $40,50 |
| Tipo de memoria | DDR4 SDRAM | DRAM (SDRAM component) |
| Density | 4 Gbit | [DATA_NEEDED: Density] |
| Organización de memoria | 512M x 8 | — |
| Velocidad de datos | 2666 MT/s (DDR4-2666) | [DATA_NEEDED: Data Rate] |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| Tipo de interfaz | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| Tensión de referencia | On-die internal adjustable VREFDQ generation | — |
| Encapsulado | 78-FBGA (9 x 10.5 mm), TFBGA | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range (standard grade)] | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | — |
| Speed Grade Suffix | -075E | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Manufacturer | — | Samsung Electronics |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| Latencia CAS | — | [DATA_NEEDED: CAS Latency] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| Nivel MSL | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |