MT53D512M32D2DS-053 WT:D vs MT53E128M32D2DS-053 Comparación
Comparación detallada lado a lado de MT53D512M32D2DS-053 WT:D por Micron Technology y MT53E128M32D2DS-053 por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron
MT53D512M32D2DS-053 WT:D ✓ ActivoMicron Technology
MT53E128M32D2DS-053 - 4Gb LPDDR4/LPDDR4X DRAM | Micron
MT53E128M32D2DS-053 ✓ ActivoComparación de especificaciones
| Parámetro | MT53D512M32D2DS-053 WT:D | MT53E128M32D2DS-053 |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $6,05 | $3,55 |
| Tipo de memoria | SDRAM - Mobile LPDDR4 | Mobile LPDDR4 / LPDDR4X SDRAM (unified) |
| Tamaño de memoria | 16 Gbit (2 GB) | — |
| Organización de memoria | 512M x 32 | 128M x 32 |
| Clock Frequency / Data Rate | 1.866 GHz (1866 MT/s) | — |
| Encapsulado | 200-WFBGA (10 mm x 14.5 mm) | 200-ball WFBGA (10 x 14.5 mm) |
| Die Configuration | DDP (Double Die Package) | — |
| Temperatura de funcionamiento | -40C to +85C | [DATA_NEEDED: operating temperature range] |
| Speed Grade | -053 | -053 |
| Características | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Ancho del bus de datos | 32 bit | — |
| Memory Interface | Parallel, LPDDR4 | — |
| Self-Refresh | Auto self-refresh with temperature-compensated refresh | — |
| Refresh | Auto refresh and self refresh | [DATA_NEEDED: refresh mode 8x/16x] |
| Tensión de alimentación | [DATA_NEEDED: VDD/VDDQ supply voltage] | — |
| Estado RoHS | RoHS Compliant (per DigiKey listing) | Compliant |
| Density | — | 4 Gbit |
| Velocidad de datos | — | 1.866 GHz (1866 Mbps/pin) |
| VDDQ (LPDDR4X mode) | — | 0.6 V |
| VDDQ (LPDDR4 mode) | — | 1.10 V |
| VDD | — | [DATA_NEEDED: VDD supply voltage] |
| Configuration | — | DDP (double-die package) |
| Automotive Variant | — | MT53E128M32D2DS-053 AUT:A / AAT:A / AIT:A available |
| Access Type | — | Synchronous, bank-group burst |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |