MT53D512M32D2DS-053 WT:D vs MT53E256M32D2DS-053 WT:B Comparación
Comparación detallada lado a lado de MT53D512M32D2DS-053 WT:D por Micron Technology y MT53E256M32D2DS-053 WT:B por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron
MT53D512M32D2DS-053 WT:D ✓ ActivoMicron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ ActivoComparación de especificaciones
| Parámetro | MT53D512M32D2DS-053 WT:D | MT53E256M32D2DS-053 WT:B |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $6,05 | $21,90 |
| Tipo de memoria | SDRAM - Mobile LPDDR4 | LPDDR4 SDRAM (Mobile DRAM) |
| Tamaño de memoria | 16 Gbit (2 GB) | — |
| Organización de memoria | 512M x 32 | 256M x 32 |
| Clock Frequency / Data Rate | 1.866 GHz (1866 MT/s) | — |
| Encapsulado | 200-WFBGA (10 mm x 14.5 mm) | 200-ball WFBGA, 10 x 14.5 mm |
| Die Configuration | DDP (Double Die Package) | — |
| Temperatura de funcionamiento | -40C to +85C | — |
| Speed Grade | -053 | — |
| Características | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask | Auto precharge, write leveling, ZQ calibration |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Ancho del bus de datos | 32 bit | — |
| Memory Interface | Parallel, LPDDR4 | — |
| Self-Refresh | Auto self-refresh with temperature-compensated refresh | Auto self-refresh with built-in temperature sensor |
| Refresh | Auto refresh and self refresh | — |
| Tensión de alimentación | [DATA_NEEDED: VDD/VDDQ supply voltage] | — |
| Estado RoHS | RoHS Compliant (per DigiKey listing) | Compliant (per JLCPCB/LCSC listing) |
| Density | — | 8 Gbit (256M x 32) |
| Velocidad de datos | — | 1866 Mbps/pin (1.866 GHz) |
| Supply Voltage (VDD2/VDDQ) | — | 1.1 V |
| Operating Temperature (WT grade) | — | -30C to +85C |
| Bus Width | — | 32-bit |
| Peak Bandwidth (per device) | — | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Access Time / CAS Latency | — | [DATA_NEEDED: CL at 1866 Mbps] |
| Refresh Interval | — | [DATA_NEEDED: tREFI specification] |
| Package Height | — | [DATA_NEEDED: max package height] |