MT53E1G32D2FW-046 WT:B vs MT53E2G32D4DE-046 WT:A Comparación
Comparación detallada lado a lado de MT53E1G32D2FW-046 WT:B por Micron Technology y MT53E2G32D4DE-046 WT:A por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53E1G32D2FW-046 WT:B - 32Gb LPDDR4 SDRAM | Micron
MT53E1G32D2FW-046 WT:B ✓ ActivoMicron Technology
MT53E2G32D4DE-046 WT:A - 64Gb LPDDR4X SDRAM 2G×32 | Micron
MT53E2G32D4DE-046 WT:A ✓ ActivoComparación de especificaciones
| Parámetro | MT53E1G32D2FW-046 WT:B | MT53E2G32D4DE-046 WT:A |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $98,44 | $47,85 |
| Tipo de memoria | Volatile, Mobile LPDDR4 SDRAM (LPDRAM) | Mobile LPDDR4X SDRAM (volatile) |
| Memory Capacity | 32 Gbit (4 GB) | — |
| Organización de memoria | 1G x 32 | 2G × 32 bit |
| Interface / Bus Width | Parallel, 32-bit | — |
| Clock Frequency (max) | 2.133 GHz (2133 MHz) | — |
| Data Rate (per pin) | 4266 MT/s | — |
| Clock Access Time (tCK) | 3.5 ns | — |
| Speed Bin | -046 | — |
| Supply Voltage VDD2 | 1.1 V | — |
| Supply Voltage VDDQ | 1.1 V (LPDDR4X) / 1.8 V (LPDDR4) | — |
| Encapsulado | 200-ball TFBGA (10 mm x 14.5 mm) | 200-ball TFBGA (10 × 14.5 mm) |
| Temperatura de funcionamiento | -25C to +85C | -25 °C to +85 °C |
| Tipo de montaje | Surface Mount | Surface Mount |
| Die Configuration | Dual-Die Package (DDP) | — |
| On-Die Features | Auto precharge, Data mask, ZQ calibration, Write leveling, Built-in temperature sensor, Asynchronous reset | — |
| Estado RoHS | Compliant | Compliant |
| Density | — | 64 Gbit |
| Speed Grade | — | -046 (2133 MHz tCK) |
| Clock Frequency | — | 2.133 GHz |
| Access Time (tCK) | — | 3.5 ns |
| Velocidad de datos | — | 4266 MT/s (DDR, dual-edge) |
| Supply Voltage (VDD1/VDD2/VDDQ) | — | 1.06 V to 1.17 V (VDDQ 0.6 V typical, HSUL_12) |
| Interfaz | — | Parallel command/address; HSUL_12 data |
| Ball Pitch | — | 1.0 mm |
| Device Configuration | — | Dual-rank / dual-channel x32 |
| Write Cycle Time (typical) | — | 18 ns |
| Nivel MSL | — | MSL-3 (per JEDEC J-STD-020) |