MT53E256M32D2DS-053 WT:B vs MT53E128M32D2DS-053 Comparación
Comparación detallada lado a lado de MT53E256M32D2DS-053 WT:B por Micron Technology y MT53E128M32D2DS-053 por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ ActivoMicron Technology
MT53E128M32D2DS-053 - 4Gb LPDDR4/LPDDR4X DRAM | Micron
MT53E128M32D2DS-053 ✓ ActivoComparación de especificaciones
| Parámetro | MT53E256M32D2DS-053 WT:B | MT53E128M32D2DS-053 |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $21,90 | $3,55 |
| Tipo de memoria | LPDDR4 SDRAM (Mobile DRAM) | Mobile LPDDR4 / LPDDR4X SDRAM (unified) |
| Density | 8 Gbit (256M x 32) | 4 Gbit |
| Organización de memoria | 256M x 32 | 128M x 32 |
| Velocidad de datos | 1866 Mbps/pin (1.866 GHz) | 1.866 GHz (1866 Mbps/pin) |
| Supply Voltage (VDD2/VDDQ) | 1.1 V | — |
| Operating Temperature (WT grade) | -30C to +85C | — |
| Encapsulado | 200-ball WFBGA, 10 x 14.5 mm | 200-ball WFBGA (10 x 14.5 mm) |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Self-Refresh | Auto self-refresh with built-in temperature sensor | — |
| Características | Auto precharge, write leveling, ZQ calibration | — |
| Bus Width | 32-bit | — |
| Peak Bandwidth (per device) | approximately 7.46 GB/s (32-bit x 1866 Mbps) | — |
| Estado RoHS | Compliant (per JLCPCB/LCSC listing) | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: moisture sensitivity level] |
| Access Time / CAS Latency | [DATA_NEEDED: CL at 1866 Mbps] | — |
| Refresh Interval | [DATA_NEEDED: tREFI specification] | — |
| Package Height | [DATA_NEEDED: max package height] | — |
| Speed Grade | — | -053 |
| VDDQ (LPDDR4X mode) | — | 0.6 V |
| VDDQ (LPDDR4 mode) | — | 1.10 V |
| VDD | — | [DATA_NEEDED: VDD supply voltage] |
| Configuration | — | DDP (double-die package) |
| Automotive Variant | — | MT53E128M32D2DS-053 AUT:A / AAT:A / AIT:A available |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Refresh | — | [DATA_NEEDED: refresh mode 8x/16x] |
| Access Type | — | Synchronous, bank-group burst |