MT53E256M32D2DS-053 WT:B vs MT53D512M32D2DS-053 WT:D Comparación
Comparación detallada lado a lado de MT53E256M32D2DS-053 WT:B por Micron Technology y MT53D512M32D2DS-053 WT:D por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ ActivoMicron Technology
MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron
MT53D512M32D2DS-053 WT:D ✓ ActivoComparación de especificaciones
| Parámetro | MT53E256M32D2DS-053 WT:B | MT53D512M32D2DS-053 WT:D |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $21,90 | $6,05 |
| Tipo de memoria | LPDDR4 SDRAM (Mobile DRAM) | SDRAM - Mobile LPDDR4 |
| Density | 8 Gbit (256M x 32) | — |
| Organización de memoria | 256M x 32 | 512M x 32 |
| Velocidad de datos | 1866 Mbps/pin (1.866 GHz) | — |
| Supply Voltage (VDD2/VDDQ) | 1.1 V | — |
| Operating Temperature (WT grade) | -30C to +85C | — |
| Encapsulado | 200-ball WFBGA, 10 x 14.5 mm | 200-WFBGA (10 mm x 14.5 mm) |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Self-Refresh | Auto self-refresh with built-in temperature sensor | Auto self-refresh with temperature-compensated refresh |
| Características | Auto precharge, write leveling, ZQ calibration | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask |
| Bus Width | 32-bit | — |
| Peak Bandwidth (per device) | approximately 7.46 GB/s (32-bit x 1866 Mbps) | — |
| Estado RoHS | Compliant (per JLCPCB/LCSC listing) | RoHS Compliant (per DigiKey listing) |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Access Time / CAS Latency | [DATA_NEEDED: CL at 1866 Mbps] | — |
| Refresh Interval | [DATA_NEEDED: tREFI specification] | — |
| Package Height | [DATA_NEEDED: max package height] | — |
| Tamaño de memoria | — | 16 Gbit (2 GB) |
| Clock Frequency / Data Rate | — | 1.866 GHz (1866 MT/s) |
| Die Configuration | — | DDP (Double Die Package) |
| Temperatura de funcionamiento | — | -40C to +85C |
| Speed Grade | — | -053 |
| Ancho del bus de datos | — | 32 bit |
| Memory Interface | — | Parallel, LPDDR4 |
| Refresh | — | Auto refresh and self refresh |
| Tensión de alimentación | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |