NVHL072N120SC1 vs NTHL040N120SC1 Comparación

Comparación detallada lado a lado de NVHL072N120SC1 por onsemi y NTHL040N120SC1 por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Comparación de especificaciones

Parámetro NVHL072N120SC1 NTHL040N120SC1
Marca onsemi onsemi
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $5,45 $5,47
Device Type N-Channel Silicon Carbide (SiC) MOSFET, EliteSiC —
Drain-Source Voltage (VDS) 1200 V —
Technology M1 planar SiC Silicon Carbide (SiC), EliteSiC M1
RDS(on) Max [DATA_NEEDED: RDS(on) max for NVHL072N120SC1] —
Continuous Drain Current (Tc) [DATA_NEEDED: ID at Tc for NVHL072N120SC1] 60 A
Power Dissipation (Tc) [DATA_NEEDED: PD at Tc for NVHL072N120SC1] 348 W
Total Gate Charge (QG tot) [DATA_NEEDED: QG for NVHL072N120SC1] (family typ. 56 nC for 80 mohm grade) —
Effective Output Capacitance (Coss) [DATA_NEEDED: Coss for NVHL072N120SC1] (family typ. 80 pF for 80 mohm grade) —
Encapsulado TO-247-3 (through hole) TO-247-3L (Through Hole)
Tipo de montaje Through Hole Through Hole
100% UIL Tested Yes —
AEC-Q101 Qualified —
PPAP Capable —
Halide Free Yes —
Estado RoHS Compliant Compliant
Channel Type — N-Channel
VDS (Drain-Source Voltage) — 1200 V
RDS(on) (Max) — 40 mΩ
Avalanche Energy EAS — 613 mJ (Tj = 25C, L = 1 mH, IAS = 35 A)
Configuration — Single FET
Gate Charge — [DATA_NEEDED: total gate charge Qg]
Input Capacitance Ciss — [DATA_NEEDED: Ciss]
Junction Temperature Range — [DATA_NEEDED: Tj range]
Thermal Resistance RthJC — [DATA_NEEDED: RthJC]
Moisture Sensitivity Level — [DATA_NEEDED: MSL]

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