PVT322PBF vs PVG612ASPBF Comparación
Comparación detallada lado a lado de PVT322PBF por Infineon y PVG612ASPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | PVT322PBF | PVG612ASPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Relays | Relays |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $6,20 | $2,65 |
| Relay Type | Solid State Photovoltaic Relay (PVR) | Solid State Photo-Coupled Relay (PhotoMOS / Photovoltaic) |
| Contact Configuration | 2 x SPST-NO (2 Form A), dual-pole | SPST-NO (1 Form A) |
| Load Voltage Rating (Max) | 250 V AC peak or DC | — |
| Load Current Rating (Max) | 170 mA AC/DC per channel | — |
| On-State Resistance (Typical) | 8 ohm per channel | — |
| Input-to-Output Isolation | 5000 Vrms | — |
| LED Forward Current (Typical) | 5 mA | — |
| Output Switch Technology | HEXFET power MOSFET | — |
| Photovoltaic Generator Light Source | GaAlAs infrared LED | — |
| Turn-On Time | [DATA_NEEDED: turn-on time] | — |
| Turn-Off Time | [DATA_NEEDED: turn-off time] | — |
| Rango de temperatura de funcionamiento | -40 C to +85 C | — |
| Encapsulado | 8-DIP (0.300 inch, 7.62mm) through-hole | 6-SMD (0.300 inch, 7.62 mm pitch) |
| Tipo de montaje | Through-hole (thru-hole); surface-mount (gull-wing) variant PVT322S available | Surface Mount |
| RoHS Compliance | Compliant (PbF suffix indicates lead-free) | — |
| Contact Bounce | None (bounce-free MOSFET switching) | — |
| Load Voltage Max | — | 60 V |
| Load Current (AC, continuous) | — | 2 A |
| Load Current (DC, pulsed) | — | 4 A |
| On-State Resistance (Max) | — | 0.1 ohm |
| Isolation Voltage (Input to Output) | — | 4 kV |
| Forward Current If (Nominal) | — | 25 mA |
| Input LED Forward Voltage Vf | — | [DATA_NEEDED: LED forward voltage Vf] |
| Turn-On Time (Typ) | — | [DATA_NEEDED: turn-on time] |
| Turn-Off Time (Typ) | — | [DATA_NEEDED: turn-off time] |
| Temperatura de funcionamiento | — | -40C to +85C |
| Output Device | — | HEXFET Power MOSFET (back-to-back) |
| Estado RoHS | — | Compliant |
| Lead Free | — | Yes (Pb-free suffix 'PBF') |