RTAX1000SL-CQ352V vs RTAX2000DL-CQ352B Comparación
Comparación detallada lado a lado de RTAX1000SL-CQ352V por Microchip Technology y RTAX2000DL-CQ352B por Microchip Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Microchip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ ActivoMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ ActivoComparación de especificaciones
| Parámetro | RTAX1000SL-CQ352V | RTAX2000DL-CQ352B |
|---|---|---|
| Marca | Microchip Technology | Microchip Technology |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,00 |
| Family | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) | — |
| Equivalent System Gates | 1,000,000 | 2,000,000 |
| CLBs (Logic Modules) | 12,096 | — |
| Logic Cells | 18,144 | [DATA_NEEDED: Logic Cells] |
| Maximum Toggle Frequency | 581 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Voltage | 1.5 V | — |
| Programming Technology | Antifuse (one-time programmable) | Nonvolatile antifuse |
| Radiation Tolerance | Radiation-tolerant, space-flight qualified family | — |
| Power-Up Behavior | Live at power-up (non-volatile) | — |
| Configuration Upset Immunity | No SEU in configuration memory (antifuse) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Encapsulado | 352-pin Ceramic CQFP (CQ352V) | 352-terminal ceramic CQFP, metal-sealed |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| I/O Voltage | [DATA_NEEDED: I/O bank voltage range] | — |
| Total Ionizing Dose (TID) | [DATA_NEEDED: TID rating in krad (Si)] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | — |
| Estimated Equivalent Gates per CLB | [DATA_NEEDED: gates-per-CLB ratio] | — |
| CLBs | — | 19,712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |
| Configuration | — | Live at power-up, no external boot PROM required |
| Application Domain | — | Space flight systems |