RTAX250S-CG624V vs RTAX2000SL-CGS624V Comparación
Comparación detallada lado a lado de RTAX250S-CG624V por Microchip Technology y RTAX2000SL-CGS624V por Microchip Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Microchip Technology
RTAX250S-CG624V - 250K-Gate Rad-Tolerant FPGA | Microchip
RTAX250S-CG624V ✓ ActivoMicrochip Technology
RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-CGS624V ✓ ActivoComparación de especificaciones
| Parámetro | RTAX250S-CG624V | RTAX2000SL-CGS624V |
|---|---|---|
| Marca | Microchip Technology | Microchip Technology |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $6.500,00 |
| Family | RTAX-S Radiation-Tolerant FPGA | RTAX-S/SL Radiation-Tolerant FPGA |
| Equivalent System Gates | 250000 | 2000000 |
| Configurable Logic Blocks (CLBs) | 2816 | — |
| Logic Cells | 4224 | — |
| Maximum System Frequency | 649 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage | 1.5 V nominal | [DATA_NEEDED: core supply voltage] |
| User I/O | 248 | — |
| Encapsulado | 624-pin Ceramic Column Grid Array (CCGA) | CG624 ceramic package |
| Temperatura de funcionamiento | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Programming Technology | Antifuse (live at power-up) | — |
| SEU Immunity | SEU-hardened registers, immune to single-event upsets | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits with optional EDAC protection |
| Special Routing | Segmentable clocks, chip-wide highway routing, carry logic | — |
| Tipo de montaje | Surface Mount | — |
| Target Application | Space-flight systems | — |
| Logic Cells (CLBs) | — | 21504 |
| Technology | — | CMOS antifuse (nonvolatile) |
| User I/Os (maximum) | — | 684 |
| Total Ionizing Dose (TID) | — | 300 krad (Si) functional / 200 krad (Si) parametric |
| Single-Event Upset Rate | — | Less than 1E-10 errors per bit-day |
| Configuration | — | One-time programmable antifuse, live at power-up |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clock Architecture | — | Segmentable clock structures |
| Routing | — | Chip-wide highway routing, carry logic |
| Application Domain | — | Space-flight systems |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Speed Grade | — | [DATA_NEEDED: speed grade] |
| System Frequency (typical) | — | [DATA_NEEDED: system frequency] |