SI1553DL-T1-E3 vs SI1553DL-T1-GE3 Comparación
Comparación detallada lado a lado de SI1553DL-T1-E3 por Vishay Intertechnology y SI1553DL-T1-GE3 por Vishay Intertechnology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Vishay Intertechnology
SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay
SI1553DL-T1-E3 ✓ ActivoVishay Intertechnology
SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay
SI1553DL-T1-GE3 ✓ ActivoComparación de especificaciones
| Parámetro | SI1553DL-T1-E3 | SI1553DL-T1-GE3 |
|---|---|---|
| Marca | Vishay Intertechnology | Vishay Intertechnology |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,22 | $0,14 |
| Manufacturer | Vishay Siliconix | Vishay Siliconix |
| Configuration | N-Channel + P-Channel (Complementary Pair) | — |
| Drain-Source Voltage (VDS) | 20 V | — |
| Gate-Source Voltage (VGS) | ±8 V | — |
| Continuous Drain Current N-Ch (ID) | 660 mA | — |
| Continuous Drain Current P-Ch (ID) | 410 mA | — |
| On-Resistance N-Ch (RDS(on)) | 5 Ω typical @ VGS = 2.5 V | — |
| On-Resistance P-Ch (RDS(on)) | [DATA_NEEDED: RDS(on) P-channel] | — |
| Gate Threshold Voltage (VGS(th)) | 0.9 V typical | — |
| Total Power Dissipation | 270 mW | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | -55C to +150C (TJ) |
| Encapsulado | SC-70-6 (SOT-363 / SC-88) | SC-70-6 / SOT-363-6 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | TrenchFET | — |
| Halogen-Free Option | Yes (per IEC 61249-2-21) | — |
| Estado RoHS | Compliant (RoHS Directive 2002/95/EC) | — |
| Lead (Pb) Content | Lead-free (E3 suffix) | — |
| Part Number | — | SI1553DL-T1-GE3 |
| Transistor Polarity | — | Complementary N and P Channel |
| Number of Channels | — | 2 (1 N-channel + 1 P-channel) |
| Drain-Source Voltage VDS (max) | — | 20 V |
| Continuous Drain Current ID - N-Channel | — | 700 mA |
| Continuous Drain Current ID - P-Channel | — | 500 mA |
| On-Resistance RDS(on) - N-Channel | — | 0.32 ohm (typ at VGS = 4.5 V) |
| On-Resistance RDS(on) - P-Channel | — | [DATA_NEEDED: P-channel RDS(on) value] |
| Gate-Source Threshold VGS(th) | — | 2.5 V (max) |
| Gate-Source Voltage VGS (max) | — | [DATA_NEEDED: +/- VGS absolute maximum] |
| Power Dissipation PD | — | 340 mW |
| Process Technology | — | TrenchFET |
| Termination Finish | — | Lead-free (Pb-free), Halogen-free |
| RoHS Compliance | — | Compliant per Directive 2002/95/EC |
| Sin halógenos | — | Yes (per IEC 61249-2-21) |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |