TPS53511RGTR vs TPS53515RVER Comparación
Comparación detallada lado a lado de TPS53511RGTR por Texas Instruments y TPS53515RVER por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
TPS53515RVER - 12A Sync Buck Converter 18V | Texas Instruments
TPS53515RVER ✓ ActivoComparación de especificaciones
| Parámetro | TPS53511RGTR | TPS53515RVER |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | DC-DC Converters | DC-DC Converters |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,42 | $2,32 |
| Topología | Synchronous Step-Down (Buck) Converter, D-CAP2 mode | Synchronous Buck (Step-Down) Converter |
| Rango de tensión de entrada | 4.5 V to 18 V | — |
| Output Current | 1.5 A | — |
| Tipo de salida | Positive Adjustable | — |
| Feedback Reference Voltage | 0.76 V | — |
| Número de salidas | 1 | — |
| Switching MOSFETs | Integrated (synchronous) | — |
| Control Mode | Adaptive On-Time D-CAP2 | D-CAP3 (Adaptive On-Time) |
| Temperatura de funcionamiento | -40C to +85C | — |
| Encapsulado | 16-VFQFN Exposed Pad (RGT), VQFN-16 | 28-VFQFN Exposed Pad (VQFN-CLIP) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Quiescent / Standby Current | Low standby current (per datasheet) | — |
| Applications | Points-of-load, computing power systems | — |
| Package Size | 4x4 mm QFN family | — |
| Packaging | Tape & Reel (RGTR suffix) | — |
| Typical Efficiency | [DATA_NEEDED: typical efficiency curve value] | — |
| Frecuencia de conmutación | [DATA_NEEDED: nominal switching frequency] | — |
| Input Voltage Range (VIN) | — | 1.5 V to 18 V |
| Bias Supply Voltage Range (VBIAS) | — | 4.5 V to 25 V |
| Rango de tensión de salida | — | 0.6 V to 5.5 V |
| Continuous Output Current | — | 12 A |
| Tensión de referencia | — | 600 mV +/- 0.5% |
| High-Side MOSFET RDS(on) | — | 13.8 mOhm |
| Low-Side MOSFET RDS(on) | — | 5.9 mOhm |
| Output Capacitor Support | — | All Ceramic |
| Internal Boost Switch | — | Integrated (no external bootstrap diode) |
| Rango de temperatura de funcionamiento | — | -40 C to +85 C (ambient) |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |
| Estado RoHS | — | Compliant |
| Reference Efficiency (12A, inductor-on-top) | — | > 87%, ~2.6 W loss, 12 mV ripple |