UCC21750-Q1 vs UCC21750DW Comparación

Comparación detallada lado a lado de UCC21750-Q1 por Texas Instruments y UCC21750DW por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Texas Instruments
UCC21750-Q1 UCC21750-Q1 - 10A Isolated SiC/IGBT Gate Driver | TI Automotive

UCC21750-Q1 - 10A Isolated SiC/IGBT Gate Driver | TI Automotive

UCC21750-Q1 ✓ Activo
Texas Instruments
UCC21750DW UCC21750DW - ±10A 5.7kVrms Isolated SiC/IGBT Gate Driver | TI

UCC21750DW - ±10A 5.7kVrms Isolated SiC/IGBT Gate Driver | TI

UCC21750DW ✓ Activo

Comparación de especificaciones

Parámetro UCC21750-Q1 UCC21750DW
Marca Texas Instruments Texas Instruments
Categoría Power MOSFET Drivers Power MOSFET Drivers
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $3,45 $3,16
Driver Type Single-channel isolated gate driver —
Isolation Technology SiO2 capacitive (galvanic isolation) —
Isolation Rating (Reinforced) 5.7 kVrms —
Maximum DC Operating Voltage 2121 V DC —
Peak Source Current +10 A —
Peak Sink Current -10 A —
Supported Switch Types SiC MOSFET, IGBT —
Output-side Supply Voltage [DATA_NEEDED: VCC range] —
Input-side Supply Voltage (VDD) [DATA_NEEDED: VDD range] —
CMTI (Common-Mode Transient Immunity) >100 V/ns (typical) —
Propagation Delay [DATA_NEEDED: typical tpHL / tpLH] [DATA_NEEDED: tPD typical/max ns]
Protection Features DESAT overcurrent/short-circuit, active Miller clamp, UVLO (input + output), fault report —
Isolated Analog-to-PWM Sensor Yes (temperature or voltage sensing) —
Rango de temperatura de funcionamiento -40C to +125C (automotive) -40 °C to +125 °C
AEC-Q100 Qualification Qualified (automotive grade) —
Encapsulado 16-pin SOIC (DW) wide-body, 8.0 mm creepage/clearance SOIC-16 (DW) wide-body
Tipo de montaje Surface Mount Surface Mount
Estado RoHS Compliant Compliant
Product Type — Single-channel isolated gate driver
Target Technology — SiC MOSFET / IGBT
Peak Output Current (Source/Sink) — ±10 A
Isolation Voltage (RMS) — 5.7 kVrms
Isolation Type — Capacitive coupling (reinforced)
Common-Mode Transient Immunity (CMTI) — [DATA_NEEDED: CMTI minimum V/ns]
Maximum DC-Link Operating Voltage — 2121 V
Number of Channels — 1
Recuento de pines — 16
DESAT Short-Circuit Protection — Yes (programmable threshold)
Internal Miller Clamp — Yes
Isolated Analog Sensing Output — Yes
UVLO (Primary + Secondary) — Yes
Soft Turn-Off on Fault — Yes
Nivel MSL — [DATA_NEEDED: MSL rating]

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