AFT23S170-13SR3 - 45W LDMOS RF Power Transistor 2.3-2.4GHz | NXP
N.º de pieza: AFT23S170-13SR3 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $86.5 | $865,00 |
| 100 | $78.2 | $7.820,00 |
| 500 | $72.4 | $36.200,00 |
| 1.000 | $68.1 | $68.100,00 |
AFT23S170-13SR3 Descripción general
An RF power LDMOS is a specialized power transistor in which the active MOSFET structure is fabricated laterally (source and drain interleaved on the same silicon surface) so the device can deliver high RF output power at elevated drain voltages while remaining easy to match with 50 ohm networks. Within the cellular base-station power-amplifier hierarchy, the LDMOS family sits between GaAs HBT front-ends and emerging GaN-on-SiC devices, offering the best cost-to-watt ratio for sub-3 GHz macro-cell and small-cell transmitters up to roughly 100 W average, where it remains the industry workhorse.
Key electrical characteristics include 45 W typical average output power at 2.4 GHz, 18.8 dB typical power gain, 28 V drain bias operation, 1100 mA quiescent bias current, and a 65 V maximum drain-to-source rating. The NI-780S-6 ceramic flange package provides a low thermal-resistance path that simplifies heatsink integration in Doherty PA architectures where two such amplifiers are combined for high-efficiency back-off operation.
The device employs NXP's Airfast-generation enhancement-mode LDMOS process, using field-plate and source-connected through-substrate vias to maximize ruggedness, gain, and efficiency at 28 V. Integrated ESD protection and a stable thermal stack allow the part to survive 10:1 VSWR mismatch at the rated bias without permanent degradation, a critical requirement for cellular infrastructure where antenna faults are not uncommon.
Typical applications include 2300-2400 MHz cellular base-station power amplifiers (Doherty and push-pull topologies), W-CDMA/LTE/TD-LTE driver and final stages, and wireless-infrastructure amplifiers for fixed-wireless access (FWA) and small-cell radios. It is commonly used in NXP reference designs for Band 40 (TDD-LTE 2300 MHz) and Band 41 (TDD-LTE 2500 MHz) PAs.
When biasing this transistor, designers should set VGS near the 1100 mA IDQ operating point for Class-AB operation, ensure the drain supply is current-limited at the laboratory DC source, and add a gate-resistor network of a few kilohms to suppress VCO oscillations and improve stability below 100 MHz. The 28 V bias requirement reduces -48 V to 28 V conversion loss versus 50 V LDMOS parts used in higher-band macro-cell designs.
This page synthesizes distributor stock and lifecycle information, drop-in NXP Airfast alternatives, and practical Doherty design considerations not all collected in a single NXP datasheet excerpt.
Alternativas directas para AFT23S170-13SR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
AFT23S170-13S
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AFT23S200-13SR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AFT24S170-13SR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AFT23S170-13SR3 Valores máximos y características eléctricas
| Manufacturer | NXP USA Inc. |
| Part Status (per FindIC) | Obsolete |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 2300 MHz to 2400 MHz |
| Test Frequency | 2.4 GHz |
| Typical Output Power (Avg., W-CDMA) | 45 W |
| Power Gain (Typ @ 2400 MHz) | 18.8 dB |
| Drain Bias Voltage (VDD) | 28 V |
| Quiescent Current (IDQ) | 1100 mA |
| Drain-Source Voltage Rating (Max, VDS) | 65 V |
| Drain Current (Test, ID) | 1.1 A |
| Input Signal PAR (W-CDMA test) | 9.9 dB @ 0.01% CCDF |
| Encapsulado | NI-780S-6 (NI-780S-2L4S), ceramic flange with epoxy cap |
| Package Type (Airfast family) | SOT1799 (per FindIC listing) |
| Tipo de montaje | Surface Mount / Flange Mount (NI-780S ceramic) |
| Application | Cellular base-station RF power amplifiers |
Configuración de pines de AFT23S170-13SR3
| Pin 1 | GATE — RF input / gate bias; series RC network to gate bias feed |
| Pin 2 | DRAIN — RF output / drain (VDD); main RF power terminal |
| Pin 3 | FLANGE / GND — DC and thermal ground; mounting flange to heatsink |
AFT23S170-13SR3 Área de funcionamiento seguro (conceptual envelope)
Aplicaciones típicas
AFT23S170-13SR3 es adecuado para 6 aplicacións: LTE-TDD Band 40 Base-Station Power Amplifier, Small-Cell and Femtocell Final Stage, W-CDMA Driver and Output Stage, Doherty Back-Off Optimisation for High-PAR Signals, Fixed-Wireless Access (FWA) Customer-Premise Equipment, Industrial and Test-Driver CW Source (Lab Use Only).
LTE-TDD Band 40 Base-Station Power Amplifier
The AFT23S170-13SR3 is the canonical NXP Airfast target for 2300 MHz LTE-TDD Band 40 macro-cell PAs delivering 45 W average. Its 18.8 dB gain at 2.4 GHz halves the required drive-stage chain compared to a 9 dB gain device, and the 28 V bias minimizes the ~48 V bus converter footprint versus older 50 V LDMOS platforms. Deploy in the final stage of a Doherty PA with a 9.9 dB PAR W-CDMA-style input and the matching network tuned at 2350 MHz. Quiescent current should be set to 1100 mA IDQ for Class-AB linearity while the peaking amplifier in the Doherty is biased Class-C.
Recomendado
Small-Cell and Femtocell Final Stage
Inside small-cell and enterprise-femtocell radios, the AFT23S170-13SR3's 45 W average / ~70 W CW rating lets designers reach +38 dBm (6 W) class output from a single Doherty or single-ended stage, eliminating a second driver stage. The ceramic NI-780S-6 flange feeds directly onto a copper-coin-on-PCB thermal land, keeping junction temperature below 150 C at 100% duty. Compact small-cell radios covering 2.3-2.4 GHz TDD bands benefit particularly from the small part count this single-device final stage enables.
Recomendado
W-CDMA Driver and Output Stage
The AFT23S170-13SR3 was originally characterized for 45 W W-CDMA single-carrier output at 2400 MHz with a 9.9 dB CCDF signal, so it remains well-suited to legacy W-CDMA base-station PA chains. In a two-stage lineup it can act as the final, or in a single-stage lineup with elevated Pout it can also be driven as a ~10 W output stage ahead of a GaN final. The 28 V/1.1 A bias and the rugged device behavior at 10:1 VSWR reduce field-return rates in W-CDMA macro-cell deployments.
Recomendado
Doherty Back-Off Optimisation for High-PAR Signals
Doherty PA designers exploit the AFT23S170-13SR3's 9.9 dB PAR W-CDMA test point to maximize back-off efficiency; the carrier device operates near saturation while a peaking device (often a second AFT23S170-13SR3) dynamically supplies additional current on peaks. At 2.35 GHz the 28 V bias and 1100 mA IDQ sweet-spot keep drain efficiency above 40% at 7 dB OBO. Use 1 dB stepped attenuators and harmonic load-pull fixtures to verify matching at both fundamental and 2nd/3rd harmonic terminations.
Recomendado
Fixed-Wireless Access (FWA) Customer-Premise Equipment
FWA customer-premise equipment operating in the 2300-2400 MHz LTE-TDD band often uses a single high-power Airfast like the AFT23S170-13SR3 in a compact PA brick to meet FCC Class B/C out-of-band and conducted-power limits. The 65 V maximum VDS rating provides good margin on the inductive kick from mismatched antenna fixtures in outdoor rooftops, and the NI-780S-6 flange conducts heat directly to an aluminum enclosure heatsink.
Recomendado
Industrial and Test-Driver CW Source (Lab Use Only)
Beyond cellular service, the AFT23S170-13SR3 can drive a CW test signal at 2.4 GHz for laboratory EMC test beds and built-in test equipment. With 28 V bias and a matched 50 ohm load, the device remains stable across the 100-3000 MHz range and serves as a rugged pre-driver for larger bench amplifiers. Reliability of CW duty at full bias should be thermally qualified against the flange-to-ambient thermal resistance before long-duration stress burn-in.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para AFT23S170-13SR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | AFT23S170-13S | AFT23S200-13SR3 | AFT24S170-13SR3 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S-6 (SOT1799, ceramic flange) | NI-780S-6 (SOT1799, ceramic flange) — same | NI-780S-6 (SOT1799, ceramic flange) — same | NI-780S-6 (SOT1799, ceramic flange) — same |
| Frequency Band | 2300-2400 MHz | 2300-2400 MHz — same | 2300-2400 MHz — same | 2496-2690 MHz — shifted |
| Typical Average Output Power (W-CDMA) | 45 W | 45 W — same | ~65 W — higher (+44 %) | 45 W — same rating (different band) |
| Power Gain at Test Freq | 18.8 dB (typ) | 18.8 dB — same | 17.5 dB (typ) — ~1.3 dB lower | 18.0 dB (typ) — 0.8 dB lower |
| Drain Bias Voltage (VDD) | 28 V | 28 V — same | 28 V — same | 28 V — same |
| Drain-Source Voltage Rating (max VDS) | 65 V | 65 V — same | 65 V — same | 65 V — same |
Diferenciadores clave
- 45 W average W-CDMA output at 2.3-2.4 GHz with 28 V rail (frente a AFT24S170-13SR3 (2496-2690 MHz))
- 18.8 dB typical gain at 2400 MHz (frente a AFT23S200-13SR3 (higher-power Airfast sibling))
- Single-carrier W-CDMA optimized at 9.9 dB PAR (frente a GaN-on-SiC parts in the 2.3-2.4 GHz band)
Notas de diseño
Estimated: with VDD = 28 V, IDQ = 1.1 A and Pout = 45 W average at 40 % drain efficiency, the AFT23S170-13SR3 dissipates roughly 28 W on the flange. The NXP NI-780S ceramic package should be bolted to a flat aluminium heatsink using a thin (≤50 µm) thermal interface material rated for >2 W/mK; insufficient mounting torque or a bowed flange will lift junction temperature by 10-20 °C and degrade W-CDMA ACPR. Use a 4-40 or M3 stainless screw torqued to 8-10 in-lb with a Belleville washer for consistent thermal cycling.
The input gate lead and output drain lead of the NI-780S-6 flange are physically far apart to minimize feedback and ease 50 ohm microstrip matching; keep the gate microstrip trace < 2 mm wide (shorter than λ/8 at 2.4 GHz ≈ 15.6 mm) on a low-loss PCB substrate (Rogers RO4350B or RO4003C). Place a 1-5 kohm gate-bias resistor and a 10 kohm pull-down resistor to keep VGS < 0 V during fault conditions; failure to add the pull-down can result in spontaneous turn-on from RF leakage into the gate feed.
Do not exceed 65 V VDS; inductive load mismatches (especially in antenna-disconnected test conditions) can spike VDS above the rating. Always power-up the bench supply with a 30 V / 2 A current limit and shut down gate bias first before removing VDD, since hot-switching the drain supply stresses the device. For W-CDMA load-pull at 2.4 GHz, ensure the input-matching harmonic load is presented at 2f0 = 4.8 GHz with low reactance — a poor 2nd-harmonic termination collapses ACPR by 3-6 dB and is the most common PA-tuning failure.
Embed a small-signal stabiliser (typically a 1-3 kohm gate resistor in series with the gate feed, plus a 5-30 pF bypass cap in parallel with the gate) to suppress low-frequency (10-100 MHz) parametric oscillations in AFT-class LDMOS devices. Without this network, multi-carrier W-CDMA drive at full bias can produce spurious oscillations that erase gain flatness. Validate stability with a 50 MHz-2 GHz VNA stability probe before committing the PA to production tuning.
Información de cumplimiento
RoHS/REACH/lead-free/halogen-free declarations were not contained in the verified data snippets — consult the official NXP AFT23S170-13S datasheet PDF and Declaration of Conformity for full compliance status. AEC-Q100 is not applicable: this is an RF power transistor, not an automotive-grade IC.
