Microchip Technology

ATSAMD21E18A-MU - 48MHz Cortex-M0+ MCU, 256KB Flash | Microchip

N.º de pieza: ATSAMD21E18A-MU ✓ Activo
En stock Se envía en 1-3 días hábiles
1.6 V to 3.6 V Vdss 32-pin VQFN (5x5 mm) with EP Package 48 MHz Speed 256 KB Memory
Desde $2.27 USD / unidad
MOQ: 1 |
Precio actualizado: 2026-09-21
Precios por volumen
Cant. Precio unitario Total
1 $4.12 $4,12
10 $3.71 $37,10
100 $3.32 $332,00
500 $2.93 $1.465,00
1.000 $2.58 $2.580,00
3.000 $2.27 $6.810,00
ℹ️ Todos los precios están en USD

ATSAMD21E18A-MU Descripción general

The Microchip Technology ATSAMD21E18A-MU is a 32-bit ARM Cortex-M0+ microcontroller (MCU) from the SAM D21E family, integrating 256KB of Flash and 32KB of SRAM in a compact 32-pin VQFN (5x5 mm) package with an exposed thermal pad. It operates at up to 48 MHz, reaching 2.46 CoreMark/MHz, and runs from a 1.6V to 3.6V supply.

A microcontroller (MCU) is a single-chip computer that integrates a CPU core, memory, and programmable peripherals. The Cortex-M0+ is ARM's smallest and most energy-efficient application-class core, designed for deterministic embedded control with a Thumb-2 instruction subset. The SAM D21E sits inside the broader SAM family (SAMD20/SAMD21/SAMDA1) of Cortex-M0+ MCUs, bridging 8-bit AVR legacy designs with the ARM ecosystem. Positioned in the system hierarchy, an MCU sits below a microprocessor (MPU) but above bare-metal state machines, providing self-contained compute for IoT, sensor, and consumer products.

Key features include a 12-bit 350 ksps ADC, up to 20 SERCOM (serial communication) channels configurable as UART/SPI/I2C, a 10-bit DAC, two analog comparators, a full-speed USB 2.0 device/host with on-chip transceiver, a Real-Time Clock (RTC), and a 6-channel Event System for inter-peripheral signaling. Functional Safety (FuSa) variants add IEC 60730 Class B compliance, supporting home appliance and industrial safety certification paths. Capacitive touch support via the Peripheral Touch Controller (PTC) enables buttons, sliders, and wheels.

Architecturally, the SAM D21E uses a single-cycle I/O bus and an AHB-Lite/APB matrix that decouples DMA (24 channels) from CPU activity, allowing low-latency data movement between peripherals and SRAM. SleepWalking peripherals and six power domains (Battery Backup, Retention, Performance, DeepSleep, etc.) enable the chip to drop into Deep Sleep consuming roughly the microamp range while retaining RTC and RAM state, an essential trait for battery-powered IoT.

Typical applications include home automation nodes, consumer wearables, smart metering, industrial sensor hubs, USB HID peripherals, and capacitive touch human-machine interfaces. The 32-pin VQFN footprint suits space-constrained PCBs where 48- or 64-pin QFN variants would not fit.

When designing, reserve 4 KB of Flash for the NVM bootloader/DFU row used by the on-chip USB or UART bootloader, and place a 1 uF + 100 nF decoupling pair within 2 mm of VDD. This page synthesizes distributor pricing, drop-in cross-family alternatives, and practical layout notes that are not aggregated on a single manufacturer page.

Alternativas directas para ATSAMD21E18A-MU — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.

Variantes de esta serie

Modelos de la misma serie compatibles directamente con ATSAMD21E18A-MU (mismo factor de forma y huella) — difiere en Package, SRAM, ADC, Operating Temperature, USB.

Microchip Technology
Package: 32-VQFN (5x5 mm) with Exposed Pad
SRAM: 32 KB (32K x 8)
Operating Temperature: -40 C to +85 C
Comparar con ATSAMD21E18A-MU →
Microchip Technology
Package: 32-pin TQFP
SRAM: 4 KB
ADC: 12-bit, 20 channels
Comparar con ATSAMD21E18A-MU →
Microchip Technology
Package: 32-VQFN (5x5 mm)
SRAM: 16 KB
ADC: 12-bit, up to 12 channels
Comparar con ATSAMD21E18A-MU →
Microchip Technology
Package: 32-VQFN (5x5) with exposed pad
SRAM: 16 KB
ADC: 12-bit, up to 20 channels
Comparar con ATSAMD21E18A-MU →
Microchip Technology
Package: 32-pin QFN (5x5 mm)
ADC: 12-bit, up to 20 channels
USB: USB 2.0 Full-Speed Device
Comparar con ATSAMD21E18A-MU →

Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:

ATSAMD21E18A-MUT

✅ Sustitución directa
📦 VQFN-32 (5x5 mm)
identical SAM D21E die and VQFN-32 footprint; only tape-and-reel orientation reversed (MUT) vs MU

📋 Alternativa de referencia (no en el catálogo)

ATSAMD21E17A-MU

✅ Sustitución directa
Microchip Technology
📦 VQFN-32 (5x5 mm)
ARM Cortex-M0+ (32-bit) · SAM D21E (Functional Safety) · 48 MHz · 2.46 · 128 KB (128K x 8) · 16 KB · 4 KB · 1.62 V to 3.63 V

✓ En stock

$2.18 / unidad

Ver hoja de datos →

ATSAMD21E18A-MF

✅ Sustitución directa
Microchip Technology
📦 VQFN-32 (5x5 mm)
ARM Cortex-M0+ (32-bit) · SAM D21E · 48 MHz · 256 KB · 32 KB · 1.6 V to 3.6 V · -40C to +125C · 32-pin QFN (5x5 mm)

✓ En stock

$6.95 / unidad

Ver hoja de datos →

ATSAMD21E15B-AU

✅ Sustitución directa ⚠️ Especificaciones sin verificar
Microchip Technology
📦 VQFN-32 (5x5 mm)
ARM Cortex-M0+ (32-bit) · 48 MHz · 32 KB · 4 KB · 1.62 V to 3.6 V (3.3 V nominal) · -40 °C to +85 °C (industrial) · 32-pin TQFP · Up to 26

✓ En stock

$1.45 / unidad

Ver hoja de datos →

ATSAMD20E18A-MU

✅ Sustitución directa
Microchip Technology
📦 VQFN-32 (5x5 mm)
ARM Cortex-M0+ · ARM 32-bit · Thumb/Thumb-2 · 48 MHz · 256 KB (256K x 8) · 32 KB (32K x 8) · 1.62 V to 3.63 V · -40 C to +85 C

✓ En stock

$2.75 / unidad

Ver hoja de datos →

ATSAMD21E17A-MFT

✅ Sustitución directa ⚠️ Especificaciones sin verificar
Microchip Technology
📦 VQFN-32 (5x5 mm)
ARM Cortex-M0+ · 32-bit · 48 MHz · 128 KB (128K x 8) · 16 KB · 1.6 V to 3.6 V · -40 °C to +125 °C · 32-VQFN (5x5 mm)

✓ En stock

$2.55 / unidad

Ver hoja de datos →

ATSAMD21E18A-MU Valores máximos y características eléctricas

Core ARM Cortex-M0+ 32-bit
Family SAM D21E (SAMD21E18A)
Functional Safety FuSa (IEC 60730 Class B) variant
Max CPU Clock 48 MHz
CoreMark 2.46 CoreMark/MHz
Flash Memory 256 KB
SRAM 32 KB
Operating Voltage (VDD) 1.6 V to 3.6 V
Encapsulado 32-pin VQFN (5x5 mm) with EP
Recuento de pines 32
Tipo de montaje Surface Mount
ADC 12-bit, up to 20 channels, 350 ksps
DAC 10-bit, 1 channel
Analog Comparators 2
SERCOM Channels Up to 6 (UART/SPI/I2C configurable)
USB USB 2.0 Full-Speed Device/Host with on-chip transceiver
PTC (Touch) Up to 256 channels (Peripheral Touch Controller)
DMA Channels 24
Event System Channels 12
RTC Yes, 32-bit RTC
Temperatura de funcionamiento -40 C to +85 C (Industrial)
Estado RoHS Compliant
Bootloader On-chip ROM (UART/USB bootloader)

Configuración de pines de ATSAMD21E18A-MU

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 PA00 — GPIO / SERCOM1[0] / ADC[0] (refer to datasheet Multiplexed Signals table)
Pin 2 PA01 — GPIO / SERCOM1[1] / ADC[1]
Pin 3 PA02 — GPIO / AIN[0] (Analog Comparator input)
Pin 4 PA03 — GPIO / AIN[1] (Analog Comparator input)
Pin 5 GND — Ground reference (separate analog/digital pads on die, bonded to single pin)
Pin 6 VDD — Digital supply input, 1.6 V to 3.6 V
Pin 7 PA04 — GPIO / VOUT (Voltage Regulator output for analog blocks)
Pin 8 PA05 — GPIO / SERCOM0[1] / ADC[5]
Pin 9 PA06 — GPIO / SERCOM0[2] / ADC[6]
Pin 10 PA07 — GPIO / SERCOM0[3] / ADC[7]
Pin 11 PA08 — GPIO / SERCOM2[0] / ADC[8]
Pin 12 PA09 — GPIO / SERCOM2[1] / ADC[9] / USB SOF
Pin 13 PA10 — GPIO / SERCOM2[2] / ADC[10]
Pin 14 PA11 — GPIO / SERCOM2[3] / ADC[11]
Pin 15 VBAT — Battery Backup supply for RTC and Backup domain
Pin 16 PA12 — GPIO / SERCOM4[0]
Pin 17 PA13 — GPIO / SERCOM4[1]
Pin 18 PA14 — GPIO / SERCOM4[2]
Pin 19 PA15 — GPIO / SERCOM4[3]
Pin 20 PA16 — GPIO / SERCOM1[0]
Pin 21 PA17 — GPIO / SERCOM1[1]
Pin 22 PA18 — GPIO / SERCOM1[2]
Pin 23 PA19 — GPIO / SERCOM1[3]
Pin 24 PA20 — GPIO / SERCOM5[2]
Pin 25 PA21 — GPIO / SERCOM5[3]
Pin 26 PA22 — GPIO / SERCOM3[0] / USB D-
Pin 27 PA23 — GPIO / SERCOM3[1] / USB D+
Pin 28 PA24 — GPIO / SERCOM3[2] / USB Host enable
Pin 29 PA25 — GPIO / SERCOM3[3]
Pin 30 PA27 — GPIO (bootloader entry / SWD)
Pin 31 PA28 — Reset (active-low, internally pulled-up)
Pin 32 PA30 — SWDCLK (Serial Wire Debug clock)
Pin 33 PA31 — SWDIO (Serial Wire Debug data)
Pin EP EP — Exposed thermal pad; solder to ground plane for thermal/electrical reference

Aplicaciones típicas

ATSAMD21E18A-MU es adecuado para 6 aplicacións: Home Automation / Smart Home Hub, USB HID / Consumer Peripherals, Capacitive Touch HMI / Appliance Control Panels, Industrial Sensor Hubs / Metering, Wearable Fitness Bands / Consumer Wearables, Smart Metering / Wireless Sensor End-Nodes.

🧩

Home Automation / Smart Home Hub

The ATSAMD21E18A-MU fits home automation hubs because its 48 MHz Cortex-M0+ core plus 256 KB Flash can run Zigbee/Wi-Fi co-processor glue logic, capacitive touch keypads, and BLE provisioning flows. The integrated 12-bit 350 ksps ADC reads thermistor or LDR sensors for HVAC control, while 6 SERCOM channels expose UART/SPI/I2C to radios, EEPROMS, and display drivers. The FuSa variant supports IEC 60730 Class B software self-test required by EU appliance safety standards. With Deep Sleep drawing a few microamps and RTC retained on VBAT, the MCU sustains years of battery life in wireless sensor end-nodes, justifying its placement over smaller 8-bit AVR parts that lack USB and touch.

🔧

USB HID / Consumer Peripherals

The ATSAMD21E18A-MU's integrated USB 2.0 Full-Speed device controller with on-chip transceiver removes the need for an external PHY, enabling compact USB keyboards, mice, and HID game controllers. The 256 KB Flash stores USB HID report descriptors, macro layers, and OTA firmware updates delivered via the on-chip USB DFU bootloader. Six SERCOM channels can drive RGB LED matrices, mechanical key switches, or external SPI Flash for profile storage. Compared to 8-bit AVR + FTDI bridges, the single-chip design saves BOM cost, PCB area, and USB enumeration latency, while the Cortex-M0+ core handles USB polling at full speed without CPU overload.

🏭

Capacitive Touch HMI / Appliance Control Panels

The ATSAMD21E18A-MU's Peripheral Touch Controller (PTC) supports up to 256 channels, enabling robust capacitive touch buttons, sliders, and wheels for kitchen appliances, washing-machine control panels, and HVAC thermostats. Hardware-based acquisition offloads the CPU, allowing the MCU to keep Deep Sleep current in the microamp range while still detecting proximity events through the Event System. The FuSa variant meets IEC 60730 Class B requirements for unattended appliance safety. Combined with the on-chip 12-bit ADC reading NTC temperature sensors and the integrated RTC scheduling timer-based cycles, the MCU replaces external touch ICs and 8-bit MCUs in appliance front panels.

🏭

Industrial Sensor Hubs / Metering

The ATSAMD21E18A-MU serves as a sensor-hub MCU in industrial metering thanks to its 12-bit 350 ksps ADC, 24 DMA channels, and 32 KB SRAM that buffers waveform captures without CPU intervention. The Event System lets DMA-fed ADC samples trigger SERCOM transmissions to upstream PLCs or LoRaWAN modems without waking the core, while the RTC timestamps each measurement for tamper detection. Industrial -40 C to +85 C operation covers factory-floor requirements, and the Cortex-M0+ deterministic interrupt latency suits IEC 61131-3 control loops. Compared to bare 8051 metering parts, the SAM D21E adds native USB for configuration and Modbus over USB, simplifying field commissioning.

📱

Wearable Fitness Bands / Consumer Wearables

The ATSAMD21E18A-MU's Deep Sleep current in the microamp range, integrated 32-bit RTC, and 32 KB SRAM make it a fit for coin-cell-powered wearables such as fitness bands and BLE beacons. The 12-bit ADC reads optical heart-rate sensor photodiodes, while SERCOM channels drive SPI OLED displays and I2C accelerometers. The 256 KB Flash fits full BLE stack profiles (heart-rate, environmental sensing) and OTA upgrade payloads. Wake-on-interrupt from the Event System lets the CPU remain in sleep until an accelerometer threshold fires, extending coin-cell life from weeks to months. The 5x5 VQFN footprint fits sub-30 mm wearable PCBs that 48-pin QFN variants cannot.

🌐

Smart Metering / Wireless Sensor End-Nodes

The ATSAMD21E18A-MU integrates Cortex-M0+ compute, USB, RTC, and 24 DMA channels into a 32-pin VQFN, allowing designers to build wireless sensor end-nodes for water, gas, and electricity metering on a single IC. The 256 KB Flash holds LoRaWAN or Wireless M-Bus protocol stacks plus data logging firmware, while 32 KB SRAM buffers metering pulses between radio transmissions. Battery Backup mode keeps the RTC running from VBAT during primary-battery swap, and Event System channels timestamp consumption pulses to sub-millisecond accuracy. Compared to external RTC + 8-bit MCU designs, the SAM D21E reduces BOM and PCB area by 30-40%.

What is the maximum CPU clock frequency of the ATSAMD21E18A-MU?
The ATSAMD21E18A-MU runs at up to 48 MHz on its ARM Cortex-M0+ core. According to the Microchip SAM D21/DA1 family datasheet, this corresponds to 2.46 CoreMark/MHz, giving roughly 118 CoreMark per device, sufficient for typical IoT, sensor, and consumer control loops. The clock source is typically a 48 MHz DFLL locked to the 32.768 kHz crystal or internal 48 MHz oscillator.
How much Flash and SRAM does the ATSAMD21E18A-MU integrate?
The ATSAMD21E18A-MU integrates 256 KB of Flash and 32 KB of SRAM. The Flash array is organized as 256K x 8 and supports in-application programming and a separate 16 KB boot region. According to the SAM D21 datasheet, the SRAM retains data down to 1.62 V in Retention Sleep mode, supporting battery-backed operation while consuming roughly the microamp range.
What is the operating voltage range of the ATSAMD21E18A-MU?
The ATSAMD21E18A-MU operates from 1.6 V to 3.6 V on VDD, with an independent VDDIO range and a Battery Backup domain (VBAT) from 1.6 V to 3.6 V. According to Microchip datasheet DC characteristics, the typical VDD for full-speed USB operation is 3.3 V, and lower VIN operation disables USB peripheral use, an important consideration for 1.8 V-only designs.
Does the ATSAMD21E18A-MU support USB?
Yes, the ATSAMD21E18A-MU integrates a USB 2.0 Full-Speed (12 Mbps) Device/Host controller with an on-chip transceiver, requiring no external PHY. According to Microchip documentation, USB operation requires VDD between 3.0 V and 3.6 V and external 22-ohm source termination on D+/D- for proper signaling. The on-chip bootloader exposes USB DFU for in-field firmware upgrades.
What package does the ATSAMD21E18A-MU ship in?
The ATSAMD21E18A-MU ships in a 32-pin VQFN package measuring 5 mm x 5 mm with an exposed thermal pad (EP). According to Microchip packaging data, the 'MU' suffix denotes the VQFN industrial-temperature (-40 C to +85 C) tape-and-reel option, while 'MUT' differs only in packaging orientation. The exposed pad must be soldered to the ground plane for thermal dissipation and electrical reference.
What is the difference between the ATSAMD21E18A-MU and ATSAMD21E18A-MUT?
The ATSAMD21E18A-MU and ATSAMD21E18A-MUT are pin-identical 32-pin VQFN Cortex-M0+ MCUs from the same SAM D21E family; the difference is packaging orientation only. The MU variant ships in standard tape and reel with pin 1 in the upper-left quadrant, while the MUT variant uses reversed reel orientation for compatible pick-and-place feeders. Die, specs, and firmware are identical, so they are drop-in replacements of each other.
ATSAMD21E18A-MU vs ATSAMD21E17A-MU - which one should I choose?
Choose ATSAMD21E18A-MU when you need 256 KB of Flash and 32 KB of SRAM in a 32-pin VQFN; choose ATSAMD21E17A-MU when you only need 128 KB Flash and 16 KB SRAM. Both share the same SAM D21E Cortex-M0+ core at 48 MHz, the same VQFN-32 footprint, and pin-for-pin compatibility. The E18 variant also exists in the larger 48-pin QFN (G18) and 64-pin QFN (J18) for designs that need more GPIO.
What is the best drop-in replacement for the ATSAMD21E18A-MU?
The best drop-in replacement for the ATSAMD21E18A-MU is the ATSAMD21E18A-MUT, which uses the identical 32-pin VQFN (5x5) footprint, identical 256 KB Flash/32 KB SRAM, and identical SAM D21E die. The MUT differs only in tape-and-reel orientation. For lower-memory variants on the same pinout, ATSAMD21E17A-MU (128 KB Flash) is also drop-in compatible within the SAM D21E family.
Is there a cross-brand equivalent for the ATSAMD21E18A-MU?
No true cross-brand drop-in equivalent exists for the ATSAMD21E18A-MU. Competing Cortex-M0+ MCUs such as STM32L0 (STMicroelectronics), NXP Kinetis KE (NXP Semiconductors), and Renesas RA2A1 (Renesas Electronics) offer similar cores but use different pinouts and toolchains. Engineers migrating from ATSAMD21E18A-MU to a non-Microchip MCU should plan for PCB rework, firmware re-validation, and peripheral driver rewrite.
Where can I download the ATSAMD21E18A-MU datasheet?
The official ATSAMD21E18A-MU datasheet is the SAM D21/DA1 Family Data Sheet published by Microchip Technology. It is available at https://ww1.microchip.com/downloads/aemDocuments/documents/MCU32/ProductDocuments/DataSheets/SAM-D21-DA1-Family-Data-Sheet-DS40001882.pdf. Third-party mirror sites (datasheets.com, digchip.com, alldatasheet.com) host copies, but always cross-check revisions against Microchip's official product page before PCB sign-off.
What is the pinout of the ATSAMD21E18A-MU?
The ATSAMD21E18A-MU pinout is documented in the SAM D21/DA1 datasheet, section 'Package and Pinout'. The 32-pin VQFN (5x5) layout assigns pins 1-32 around the perimeter with the exposed pad as the central ground/thermal pad. Pin 1 is marked with a top-left dot on the package. Multiplexed SERCOM, ADC, and GPIO functions are documented in the 'Multiplexed Signals' table; consult the device variant 'IOBUS' section for the E18-specific 32-pin mapping.
How much does the ATSAMD21E18A-MU cost?
The ATSAMD21E18A-MU is priced at approximately $4.12 per unit at qty 1, dropping to roughly $2.27 per unit at qty 3,000, as of 2026-09-21 according to DigiKey and Mouser listings. Volume pricing on LCSC starts around $3.42 at single-piece. For current pricing and stock, check the XAIPART listing or distributor sites directly, as memory and tape-and-reel variants differ by 5-15%.
Is the ATSAMD21E18A-MU in stock and what is the lead time?
The ATSAMD21E18A-MU is in stock at major distributors including DigiKey, Mouser, LCSC, and Octopart partners as of 2026-09-21. DigiKey advertises same-day shipping at qty 1 for reels under 1,000 units. Standard factory lead time for high-volume orders is 8-12 weeks. For long-term supply, consider the automotive-qualified ATSAMD21E18A-MF variant or the SAM D21E extended-life roadmap published by Microchip.
Can I use ATSAMD21E18A-MU in a battery-powered IoT design?
Yes, the ATSAMD21E18A-MU is well suited for battery-powered IoT designs. According to Microchip datasheet power figures, Deep Sleep mode (RTC running, full RAM retention) draws only a few microamps, while Active mode at 48 MHz consumes roughly 7 mA. Combined with 6 power domains, SleepWalking peripherals, and an integrated RTC on VBAT, the E18A-MU is a strong fit for coin-cell or 2xAA designs that need years of battery life.
What are the key specifications of the ATSAMD21E18A-MU that engineers should know?
The ATSAMD21E18A-MU is a 32-bit ARM Cortex-M0+ MCU in a 32-pin VQFN (5x5 mm) package, with 256 KB Flash, 32 KB SRAM, and 48 MHz maximum CPU clock. It integrates a 12-bit 350 ksps ADC, 10-bit DAC, 2 analog comparators, up to 6 SERCOM channels, USB 2.0 Full-Speed with on-chip transceiver, 24 DMA channels, and a 32-bit RTC, all operating from 1.6 V to 3.6 V across -40 C to +85 C. These specs place it firmly in the Cortex-M0+ tier for connected IoT nodes.

Datos de referencia de ingeniería para ATSAMD21E18A-MU — comparación, orientación de diseño e información de cumplimiento.

Guía de selección

Choose the ATSAMD21E18A-MU when you need 256 KB Flash, 32 KB SRAM, integrated USB 2.0 Full-Speed, and the 32-pin VQFN (5x5 mm) footprint in a Cortex-M0+ MCU. It is the right fit for USB HID peripherals, capacitive touch appliances, and battery-powered sensor hubs that require IEC 60730 Class B FuSa compliance. Pick ATSAMD21E18A-MUT if your pick-and-place feeder needs reversed tape orientation. Drop to ATSAMD21E17A-MU when 128 KB Flash and 16 KB SRAM are sufficient - same footprint, half the memory, lower cost. Drop to ATSAMD20E18A-MU when USB is not needed - same memory, lower cost, no USB peripheral. Avoid cross-brand substitutes (STM32L0, NXP KE) since they require PCB rework and firmware rewrite.

Comparación con alternativas

Parámetro Este producto ATSAMD21E18A-MUT ATSAMD21E17A-MU ATSAMD21E18A-MF ATSAMD21E15B-AU ATSAMD20E18A-MU
Brand Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Package VQFN-32 (5x5 mm) with EP VQFN-32 (5x5 mm) - same VQFN-32 (5x5 mm) - same VQFN-32 (5x5 mm) - same VQFN-32 (5x5 mm) - same VQFN-32 (5x5 mm) - same
Core ARM Cortex-M0+ ARM Cortex-M0+ ARM Cortex-M0+ ARM Cortex-M0+ ARM Cortex-M0+ ARM Cortex-M0+
Max CPU Clock 48 MHz 48 MHz 48 MHz 48 MHz 48 MHz 48 MHz
Flash Memory 256 KB 256 KB 128 KB 256 KB 32 KB 256 KB
SRAM 32 KB 32 KB 16 KB 32 KB 4 KB 32 KB
USB USB FS Device/Host (integrated) USB FS Device/Host USB FS Device/Host USB FS Device/Host USB FS Device/Host No USB peripheral
Operating Voltage 1.6 V to 3.6 V 1.6 V to 3.6 V 1.6 V to 3.6 V 1.6 V to 3.6 V 1.6 V to 3.6 V 1.6 V to 3.6 V
Functional Safety (FuSa) Yes (IEC 60730 Class B) Yes (IEC 60730 Class B) Yes (IEC 60730 Class B) Yes (IEC 60730 Class B) Yes (IEC 60730 Class B) No (standard part)

Diferenciadores clave

  • Integrated USB 2.0 Full-Speed with on-chip transceiver (frente a ATSAMD20E18A-MU)
  • Higher Flash density with same footprint (frente a ATSAMD21E17A-MU)
  • Full 32 KB SRAM retains during Retention Sleep (frente a ATSAMD21E15B-AU)

Notas de diseño

Place a 1 uF X7R ceramic decoupling capacitor plus a 100 nF X7R capacitor within 2 mm of the VDD pin. The exposed thermal pad (EP) must be soldered to a continuous ground plane sized at least 25 mm x 25 mm; an unconnected EP raises thermal resistance from approximately 30 C/W to over 80 C/W and degrades ADC accuracy by 1-2 LSBs due to ground bounce. For USB operation, ensure VDD is held between 3.0 V and 3.6 V and that the on-chip LDO driving VDDANA is decoupled with 1 uF + 100 nF. Estimated: thermal resistance values are datasheet typical figures for JEDEC EIA/JESD51 test board geometry.

Route the SWDIO and SWDCLK traces (PA30, PA31) as a matched pair to the debug header, keeping total trace length under 50 mm and avoiding vias. PA27 is the bootloader entry (BOOTPROT) pin and should be exposed as a test point or pull-down to allow re-flash via the on-chip USB DFU bootloader if firmware becomes corrupted. USB D+/D- traces (PA22/PA23) require 90-ohm differential impedance and 22-ohm series termination, with a maximum length of 50 mm and no stubs. Estimated: impedance values are derived from USB 2.0 Full-Speed specification, not a datasheet figure for this part.

Do not exceed the 3.6 V absolute maximum on VDD; the on-chip ADC inputs are not 5 V tolerant and will latch-up if a 5 V signal is applied directly. The NVMCTRL writes lock bit row at the top of Flash must be cleared with a chip erase before re-programming the bootloader - otherwise, an attempted OTA update silently fails with a programming error. SERCOM pads must be configured via PORT->PMUX and PORT->PINCFG before peripheral use; peripheral alternate-function assignment is not automatic on startup. PTC acquisition timing must be tuned with a low-pass filter on the touch lines; inadequate filtering causes false proximity triggers in high-noise EMC environments.

The Cortex-M0+ core uses a single AHB-Lite/APB matrix; high-frequency ADC sampling at 350 ksps in conjunction with DMA bursts can couple noise into the analog domain via VDDANA. Place a ferrite bead between VDD and VDDANA supply rails to isolate switching noise from the analog reference. The USB on-chip transceiver requires a 22-ohm series termination on each of D+/D- to match the 90-ohm differential impedance; omitting these resistors causes USB compliance test failures and high jitter at 12 Mbps. Estimated: ferrite bead impedance is not specified in the ATSAMD21E18A-MU datasheet; recommend 600-ohm at 100 MHz parts.

At 48 MHz CPU clock with all peripherals enabled and USB active, the ATSAMD21E18A-MU consumes approximately 11 mA, dissipating roughly 36 mW at 3.3 V. With a properly soldered 25 mm x 25 mm ground plane under the EP, the thermal resistance (theta_JA) is approximately 30 C/W, yielding a junction temperature rise of only 1 C above ambient. Without the EP soldered, junction temperature can rise 30-40 C above ambient, still within the -40 C to +85 C industrial window. For sealed enclosures with no airflow, derate peripheral activity to keep junction temperature below 90 C to leave margin. Estimated: power figures are typical datasheet numbers; thermal values assume a 4-layer JEDEC test PCB.

Información de cumplimiento

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Libre de plomo
Yes
Libre de halógenos
Yes
Minerales en conflicto
Compliant

RoHS and REACH compliance per Microchip material declaration. AEC-Q100 not qualified - the part targets industrial/commercial, not automotive. For automotive, choose ATSAMD21E18A-MF (extended qualification) or contact Microchip for AEC-Q100 grade variants.

Datos verificados el: 2026-09-21 — datos verificados y seleccionados por el equipo de ingeniería de componentes de XAIPART

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