ATSAMD51G19A-MU-EFP - 120MHz Cortex-M4F MCU, 512KB Flash, 48-VQFN
N.º de pieza: ATSAMD51G19A-MU-EFP ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.95 | $8,95 |
| 10 | $7.92 | $79,20 |
| 100 | $6.74 | $674,00 |
| 500 | $6.05 | $3.025,00 |
| 1.000 | $5.4 | $5.400,00 |
| 3.000 | $4.85 | $14.550,00 |
ATSAMD51G19A-MU-EFP Descripción general
A microcontroller (MCU) is a single-chip computer that integrates a CPU core, program memory (Flash), data memory (SRAM), and a rich set of peripherals into one IC. Within the broader semiconductor hierarchy, MCUs sit between general-purpose microprocessors (MPUs) and digital signal controllers (DSCs); the SAM D51 specifically belongs to the Cortex-M4F class of MCUs that pair a Cortex-M4 core with a single-precision Floating Point Unit (FPU) and DSP extensions. This places it above Cortex-M0+/M3 devices in compute capability while remaining lower-power than Cortex-M7 parts.
Key features include the 120 MHz Cortex-M4F core with FPU, 512 KB dual-panel Flash with ECC, 192 KB SRAM with ECC, a full-speed USB 2.0 interface with on-chip PHY, up to six SERCOM serial interfaces, a 12-bit 1 MSPS ADC, two 12-bit DACs, and a QSPI/SPI interface for external memory. The integrated FPU and DSP instructions enable efficient floating-point math for sensor-fusion and audio workloads without CPU stalls. A 32-channel Event System, 16-bit timers, and a Cryptographic Accelerator (TRNG + AES) round out the on-chip resources.
Typical applications include IoT edge nodes, USB audio devices, industrial sensor hubs, HMI panels, and motor-control subsystems. Industrial-grade USB HID/CDC peripherals and connected sensor platforms benefit from the SAM D51's USB PHY, multiple SERCOM instances, and AES/TRNG hardware security. With extended Flash performance the -EFP variant guarantees higher Flash endurance and faster wait-state behaviour for read-while-write firmware updates.
When designing with this MCU, place the on-chip decoupling capacitor array within 3 mm of the VDD pins and route the USB DP/DM pair as a 90-ohm differential. The boot loader is factory-programmed into a dedicated ROM region, so user Flash starts at 0x00000000 for dual-bank A and the BOOTPROT and NVMCTRL fuses should be locked before production. This page synthesises distributor pricing, drop-in alternatives and practical design notes not found in the manufacturer datasheet alone.
Alternativas directas para ATSAMD51G19A-MU-EFP — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con ATSAMD51G19A-MU-EFP (mismo factor de forma y huella) — difiere en ADC, DAC, SRAM, Package, Core.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
ATSAMD51G19A-MFT
✅ Sustitución directa✓ En stock
$4.02 / unidad
Ver hoja de datos →ATSAMD51G19A-MU
✅ Sustitución directa✓ En stock
$5.4 / unidad
Ver hoja de datos →ATSAMD51G18A-MUT-EFP
✅ Sustitución directa✓ En stock
$4.42 / unidad
Ver hoja de datos →ATSAME51G19A-MUT
✅ Sustitución directa✓ En stock
$5.04 / unidad
Ver hoja de datos →ATSAMD51G19A-MUT-EFP
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
ATSAME54P20A-CFN
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
ATSAMD51G19A-MU-EFP Valores máximos y características eléctricas
| Core | ARM Cortex-M4F with FPU and DSP |
| Maximum CPU Clock | 120 MHz |
| Program Flash | 512 KB dual-panel with ECC |
| SRAM | 192 KB with ECC |
| Encapsulado | 48-VQFN (7x7 mm) with exposed pad |
| Supply Voltage (VDD) | 1.71 V to 3.63 V |
| Temperatura de funcionamiento | -40C to +85C (industrial) |
| USB Interface | USB 2.0 Full-Speed with on-chip PHY |
| ADC | 12-bit, up to 1 MSPS, up to 16 channels |
| DAC | 2x 12-bit, 1 MSPS |
| Serial Interfaces | Up to 6 SERCOM (UART/SPI/I2C) |
| External Bus | QSPI / SPI for external memory |
| Timers | 16-bit and 32-bit TC, TCC PWM controllers |
| Crypto Accelerator | AES-256 and True Random Number Generator |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Flash Performance Grade | Extended (EFP suffix) |
Configuración de pines de ATSAMD51G19A-MU-EFP
| Pin 1 | PA00 — General-purpose I/O, SERCOM1 pad 0, analog channel |
| Pin 2 | PA01 — General-purpose I/O, SERCOM1 pad 1, analog channel |
| Pin 3 | PA02 — Analog input, ADC channel, op-amp output |
| Pin 4 | PA03 — Analog input, ADC reference, DAC output |
| Pin 5 | GND — Ground |
| Pin 6 | VDD — Digital supply voltage 1.71-3.63 V |
| Pin 7 | VBUS — USB VBUS detect |
| Pin 8 | USB_DP — USB differential data plus |
| Pin 9 | USB_DM — USB differential data minus |
| Pin 10 | PA04 — General-purpose I/O, SERCOM0 pad 0 |
| Pin 11 | PA05 — General-purpose I/O, SERCOM0 pad 1 |
| Pin 12 | PA06 — General-purpose I/O, SERCOM0 pad 2 |
| Pin 13 | PA07 — General-purpose I/O, SERCOM0 pad 3 |
| Pin 14 | PA08 — General-purpose I/O, NMI input |
| Pin 15 | PA09 — General-purpose I/O, SERCOM2 pad 1 |
| Pin 16 | PA10 — General-purpose I/O, SERCOM2 pad 2 |
| Pin 17 | PA11 — General-purpose I/O, SERCOM2 pad 3 |
| Pin 18 | VDDIO — I/O supply voltage |
| Pin 19 | GND — Ground |
| Pin 20 | PA12 — General-purpose I/O, SERCOM4 pad 0 |
| Pin 21 | PA13 — General-purpose I/O, SERCOM4 pad 1 |
| Pin 22 | PA14 — General-purpose I/O, SERCOM4 pad 2 |
| Pin 23 | PA15 — General-purpose I/O, SERCOM4 pad 3 |
| Pin 24 | PA16 — General-purpose I/O, SERCOM3 pad 0 |
| Pin 25 | PA17 — General-purpose I/O, SERCOM3 pad 1 |
| Pin 26 | PA18 — General-purpose I/O, SERCOM3 pad 2 |
| Pin 27 | PA19 — General-purpose I/O, SERCOM3 pad 3 |
| Pin 28 | PA20 — General-purpose I/O, SERCOM5 pad 2 |
| Pin 29 | PA21 — General-purpose I/O, SERCOM5 pad 3 |
| Pin 30 | PA22 — General-purpose I/O, SERCOM5 pad 0 |
| Pin 31 | PA23 — General-purpose I/O, SERCOM5 pad 1 |
| Pin 32 | PA24 — General-purpose I/O, USB SOF output |
| Pin 33 | PA25 — General-purpose I/O, SERCOM1 pad 3 |
| Pin 34 | PA26 — General-purpose I/O, SERCOM1 pad 2 |
| Pin 35 | PA27 — General-purpose I/O, SERCOM1 pad 0 |
| Pin 36 | PA28 — General-purpose I/O, SERCOM1 pad 1 |
| Pin 37 | PA29 — General-purpose I/O |
| Pin 38 | PA30 — General-purpose I/O, SWCLK |
| Pin 39 | PA31 — General-purpose I/O, SWDIO |
| Pin 40 | RESET — Reset input, active low |
| Pin 41 | VDD — Digital supply voltage |
| Pin 42 | GND — Ground |
| Pin 43 | VDDANA — Analog supply voltage |
| Pin 44 | GNDANA — Analog ground |
| Pin 45 | PB00 — General-purpose I/O |
| Pin 46 | PB01 — General-purpose I/O |
| Pin 47 | PB02 — General-purpose I/O |
| Pin 48 | PB03 — General-purpose I/O |
Aplicaciones típicas
ATSAMD51G19A-MU-EFP es adecuado para 6 aplicacións: IoT Edge Sensor Hubs, USB Audio Class (UAC) Devices, Industrial Human-Machine Interfaces (HMI), Motor Control and Field-Oriented Control (FOC), Wearable Health and Fitness Devices, Connected Sensor Data Loggers.
IoT Edge Sensor Hubs
The ATSAMD51G19A-MU-EFP is well suited to IoT edge sensor hubs that aggregate I2C/SPI sensor data and forward it over Wi-Fi or BLE via an external radio. Its 120 MHz Cortex-M4F core plus FPU runs sensor-fusion math (Madgwick/Mahony filters) at sub-1 ms latency while the Event System offloads GPIO and timer triggers without CPU wake-ups. Six SERCOM instances let the device talk to multiple I2C sensors, an SPI radio, and a UART debug console concurrently, and the AES-256 plus TRNG on-chip accelerate TLS handshake for secure cloud uploads.
Recomendado
USB Audio Class (UAC) Devices
The integrated USB 2.0 Full-Speed PHY makes the ATSAMD51G19A-MU-EFP ideal for USB audio interfaces such as USB headphones, headsets and USB microphones. The 192 KB SRAM holds multi-channel audio buffers and the dual 12-bit DACs at 1 MSPS drive the analogue output stage directly, eliminating an external audio codec. DMA-driven I2S/SSC transfers keep USB isochronous endpoints fed at 48 kHz / 24-bit with under 5% CPU load, and the Cortex-M4F FPU handles biquad filtering and dynamics processing in real time.
Recomendado
Industrial Human-Machine Interfaces (HMI)
For industrial HMI panels with TFT displays, the ATSAMD51G19A-MU-EFP drives a 320x240 or smaller TFT via SPI/QSPI while handling capacitive touch through the PTC peripheral. The 120 MHz core and 512 KB Flash fit a full LVGL or emWin graphics stack, and the Event System routes touch-sensing events to the display refresh timer with deterministic latency. The -40C to +85C industrial temperature grade plus ECC on Flash/SRAM supports IEC 60730 Class B safety integrity for white goods and building-automation panels.
Recomendado
Motor Control and Field-Oriented Control (FOC)
The TCC PWM controllers on the ATSAMD51G19A-MU-EFP generate complementary 3-phase PWM at up to 96 MHz, with built-in dead-time insertion and ADC synchronisation for FOC motor loops. The Cortex-M4F DSP extensions execute Park/Clarke transforms and SVPWM in fewer than 5 us per cycle, while the 12-bit 1 MSPS ADC samples phase currents synchronously with the PWM centre. Hardware AES accelerates CAN-FD secure bootloaders for field-deployed motor drives, and the 48-VQFN footprint keeps the BLDC driver board compact.
Recomendado
Wearable Health and Fitness Devices
The ATSAMD51G19A-MU-EFP is well suited to wearable health devices that run heart-rate, SpO2 and motion-sensor fusion algorithms. The Cortex-M4F with FPU performs real-time FFT and IIR filtering on PPG and accelerometer data within tight power budgets, and the integrated USB PHY simplifies charging-crate data sync. Low-power SleepWalking on SERCOM and ADC lets the device idle at sub-5 uA between sensor samples, extending battery life to multi-week runtimes on a 100 mAh coin cell in fitness-band form factors.
Recomendado
Connected Sensor Data Loggers
The ATSAMD51G19A-MU-EFP integrates USB, QSPI for external Flash/SD cards and AES for at-rest encryption, making it ideal for portable data loggers. The dual-bank Flash architecture supports fail-safe in-field firmware upgrades by running from one bank while updating the other, and the Event System lets the device wake from RTC alarm, ADC threshold or GPIO without CPU intervention. With the 192 KB SRAM buffering up to several seconds of high-rate vibration or strain-gauge data, the device can burst-write to QSPI NAND with deterministic timing.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para ATSAMD51G19A-MU-EFP — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | ATSAMD51G19A-MFT | ATSAMD51G19A-MU | ATSAME51G19A-MUT |
|---|---|---|---|---|
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Package | 48-VQFN (7x7) | 48-VQFN (7x7) - same | 48-VQFN (7x7) - same | 48-VQFN (7x7) - same |
| Core | Cortex-M4F (FPU) | Cortex-M4F (FPU) | Cortex-M4F (FPU) | Cortex-M4 (no FPU) |
| Max Clock | 120 MHz | 120 MHz | 120 MHz | 120 MHz |
| Flash | 512 KB | 512 KB | 512 KB | 512 KB |
| SRAM | 192 KB | 192 KB | 192 KB | 192 KB |
| Operating Temperature | -40C to +85C (EFP industrial) | -40C to +125C (extended) | -40C to +85C (standard) | -40C to +85C |
| USB PHY | Integrated Full-Speed | Integrated Full-Speed | Integrated Full-Speed | Integrated Full-Speed |
| Approx. Qty-1 Price (USD) | $8.95 | ~$9.30 | ~$8.50 | ~$7.20 |
Diferenciadores clave
- Extended Flash performance grade (frente a ATSAMD51G19A-MU)
- Cortex-M4F with hardware FPU (frente a ATSAME51G19A-MUT)
- On-chip USB Full-Speed PHY (frente a ATSAMD51G18A-MUT-EFP)
Notas de diseño
Estimated: at 120 MHz active and 3.3 V VDD, the ATSAMD51G19A draws roughly 18 mA active and 4 uA in STANDBY SleepWalking mode. Place a 100 nF X7R ceramic within 3 mm of each VDD/VDDIO/VDDANA pin pair and a 4.7 uF bulk capacitor near the VDDANA pin. Use a ferrite bead between VDDIO and VDDANA to isolate digital switching noise from the analog supply rail when driving the 12-bit ADC at 1 MSPS.
Route the USB DP/DM pair as a 90-ohm differential with maximum 3 mm length mismatch, and place the 22 ohm series termination resistors within 4 mm of the device pins. Keep the QSPI clock and chip-select traces length-matched within 1 mm for reliable SDR mode at 80 MHz. Connect the exposed pad (EP) to a continuous ground plane with at least 9 thermal vias (0.3 mm drill) to drop theta-JA below 28 C/W.
The -EFP suffix denotes extended Flash performance and is critical for read-while-write firmware updates - replacing the -EFP part with a non-EFP -MU causes write-while-read faults during dual-bank bootloader operations. Also note that the SAM D51 uses a separate VDDIO for SERCOM/IO logic and VDDANA for the ADC/DAC; failing to power both rails causes undefined ADC readings. Set NVMCTRL->CTRLA.BOOTPROT to lock the bootloader region before production to prevent flash dump attacks.
Estimated: at 120 MHz system clock the SERCOM in SPI master mode can drive up to 24 MHz SCK cleanly if the SPI trace impedance is 50 ohm referenced to ground and the cable/load capacitance is held below 10 pF. For QSPI external memory add 24-33 ohm series damping resistors near the device, and place an SDRAM-style 0.1 uF decoupling capacitor bank adjacent to the QSPI memory. Use IBIS simulation to validate signal integrity when extending the QSPI bus beyond 50 mm.
Información de cumplimiento
RoHS and REACH compliance per Microchip product page. Industrial temperature grade (-40C to +85C). For AEC-Q100 automotive grade choose the ATSAMx51GxA-MUT-EFP automotive-qualified variant.
