BC338-25ZL1G - NPN 25V 800mA 210MHz TO-92 BJT | onsemi
N.º de pieza: BC338-25ZL1G ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.24 | $0,24 |
| 10 | $0.19 | $1,90 |
| 100 | $0.12 | $12,00 |
| 500 | $0.085 | $42,50 |
| 1.000 | $0.062 | $62,00 |
BC338-25ZL1G Descripción general
A bipolar junction transistor is a three-terminal semiconductor device that uses a small base current to control a much larger collector current, providing both current amplification and electronic switching. As a member of the broader small-signal transistor and discrete semiconductor family, the NPN BJT remains a staple of analog design for level shifting, driver stages, and general-purpose amplification where a MOSFET would be unnecessary or costlier.
Key features of the BC338-25ZL1G include its high 210 MHz transition frequency for a TO-92 plastic part, its 800 mA collector-current rating that covers relay, LED, and small-motor loads, and the Pb-free suffix G with formed (pre-bent) leads for automated through-hole insertion. According to the onsemi datasheet, the device is rated across an operating and storage junction temperature range up to 150 C with defined derating above 25 C.
Architecturally, this is a silicon NPN amplifier transistor produced on onsemi's mature bipolar process. The -25 gain selection guarantees hFE between 160 and 400, letting designers rely on consistent gain without external bias trimming. The formed-lead TO-92 variant preserves the standard BC338 pinout of collector, base, emitter when viewed from the flat face.
Typical applications include general-purpose amplifier stages, low-side switching of relays and LEDs, signal buffering in audio front-ends, and driver stages in consumer and industrial electronics.
Designers should derate power dissipation linearly above 25 C ambient and keep base-drive current sufficient to saturate the device at full 800 mA loads.
This page synthesizes distributor pricing, drop-in alternatives, pinout details, and practical design notes not found in the manufacturer datasheet alone.
Alternativas directas para BC338-25ZL1G — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BC338-25ZL1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BC338-25
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BC337-25
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BC337
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BC338-10ZL1G
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
BC338-16ZL1G
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
BC338-25ZL1G Valores máximos y características eléctricas
| Tipo de transistor | NPN Bipolar Junction Transistor (BJT) |
| Tensión colector-emisor (Vceo) | 25 V |
| Continuous Collector Current | 800 mA |
| Total Device Dissipation at 25C | 625 mW |
| Frecuencia de transición (ft) | 210 MHz |
| DC Current Gain (hFE) Group | Group 25 (160-400) |
| Temperatura de unión de funcionamiento | up to 150 C |
| Encapsulado | TO-92 (TO-226-3 / TO-226AA) formed leads |
| Tipo de montaje | Through Hole |
| Pinout | 1 = Collector, 2 = Base, 3 = Emitter (flat face facing viewer, leads down) |
| Lead Finish / Processing | Pb-free (G suffix), formed leads, ammo pack (L1) |
| Estado RoHS | Compliant (Pb-free suffix G) |
| Configuration | Single NPN |
Configuración de pines de BC338-25ZL1G
| Pin 1 | Collector — Collector terminal - connect to load / supply side |
| Pin 2 | Base — Base terminal - control input via current-limiting resistor |
| Pin 3 | Emitter — Emitter terminal - typically grounded in low-side switching |
Área de funcionamiento seguro (bounded by 625 mW dissipation and 25 V VCEO)
Aplicaciones típicas
BC338-25ZL1G es adecuado para 6 aplicacións: Relay and Solenoid Low-Side Switching, General-Purpose Small-Signal Amplification, LED Driving and Indicator Circuits, Consumer Electronics Level Shifting and Buffering, Industrial Control and Automation I/O, Hobbyist, Education, and Prototyping.
Relay and Solenoid Low-Side Switching
The BC338-25ZL1G is well suited to driving small relays and solenoids from microcontroller ports because its 800 mA continuous collector current comfortably covers typical 5 V and 12 V signal-relay coil loads of 30-70 mA with wide margin. In the standard low-side topology, the load sits between the supply rail and the collector, the emitter is grounded, and a 1k-4.7k base resistor driven from a 5 V logic pin saturates the transistor thanks to the guaranteed 160-400 hFE group. A flyback diode across the coil is mandatory to clamp inductive kick within the 25 V VCEO rating. Compared with a MOSFET, the BJT needs only a resistor, has no gate-charge or ESD sensitivity, and costs less in through-hole assembly.
Recomendado
General-Purpose Small-Signal Amplification
With a 210 MHz transition frequency - unusually high for a plastic TO-92 general-purpose transistor - the BC338-25ZL1G works well in common-emitter and emitter-follower amplifier stages for audio, sensor, and IF signal chains. The -25 gain group (hFE 160-400) gives designers predictable bias points without selection or trimming, and the 625 mW dissipation rating supports class-A stages at several milliamps of quiescent current with standard derating above 25 C. In an emitter-follower buffer, the high fT keeps input capacitance effects negligible well into the tens of megahertz, making it useful as an impedance transformer between high-impedance sensor outputs and ADC or cable loads. Keep collector voltage swings within the 25 V VCEO rating.
Recomendado
LED Driving and Indicator Circuits
The BC338-25ZL1G is a natural low-side driver for high-brightness LEDs and LED strings that exceed the 20-25 mA sink capability of a typical microcontroller pin. A single 100-470 ohm base resistor from a 5 V logic output saturates the transistor for collector currents up to several hundred milliamps, while the guaranteed minimum hFE of 160 ensures hard saturation even at cold temperature and low drive. The 25 V VCEO permits series strings of up to roughly five white LEDs from a 12 V or 24 V rail (with appropriate current-setting resistors), and the 625 mW package dissipation bounds the total resistor-plus-transistor loss. The through-hole formed-lead package suits hand-assembled panels and retrofits.
Recomendado
Consumer Electronics Level Shifting and Buffering
In consumer and appliance boards, the BC338-25ZL1G serves as a cheap, robust single-transistor level shifter between 3.3 V or 5 V logic domains and 12 V or 24 V peripheral rails, using open-collector configuration with a pull-up resistor to the higher rail. The guaranteed 160-400 hFE lets a 1 mA base drive switch tens of milliamps of collector load, and the 25 V collector rating covers common industrial 24 V signaling with margin. The 210 MHz fT keeps rise and fall edges fast enough for UART, interrupt, and status-line signaling well above typical baud rates. Its Pb-free formed leads suit both wave soldering and automated through-hole insertion in volume production.
Recomendado
Industrial Control and Automation I/O
On industrial PLC-style I/O cards and sensor interfaces, the BC338-25ZL1G drives optocoupler LEDs, status lamps, buzzers, and small actuators from microcontroller or FPGA outputs. Its 800 mA rating covers opto-emitter chains and multiple parallel indicators, while the 25 V VCEO tolerates 24 V industrial signaling rails. The through-hole TO-92 package withstands wave-solder profiles and field servicing better than small SMD alternatives, and the ammo-pack (L1) taping with formed leads feeds automatic insertion machines directly. Designers should derate dissipation above 25 C ambient per the onsemi datasheet curve and place a base-emitter resistor (typically 10k) to guarantee off-state in noisy panels.
Recomendado
Hobbyist, Education, and Prototyping
The BC338-25ZL1G is a staple of breadboard prototyping and electronics education because the TO-92 through-hole package inserts directly into 2.54 mm protoboards, and the transistor is inexpensive and widely stocked - over 28,000 pieces were reported at a single distributor in October 2026. Its forgiving parameters (hFE 160-400, 25 V, 800 mA, 210 MHz fT) let students and makers build amplifiers, switches, oscillators, and H-bridge legs without precision biasing. The guaranteed gain group means circuits designed on one unit replicate on another, which matters in classroom kits. The Pb-free finish keeps hobby and educational builds RoHS compliant, and the formed leads seat flush on standard perfboard layouts.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BC338-25ZL1G — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BC338-25ZL1 | BC338-25 | BC337-25 | BC337 | BC338-10ZL1G |
|---|---|---|---|---|---|---|
| Package | TO-92 (TO-226AA) formed leads | TO-92 (TO-226AA) formed leads - same | TO-92 - same footprint, straight leads | TO-92 - same footprint | TO-92 - same footprint | TO-92 (TO-226AA) formed leads - same |
| Brand | onsemi | onsemi | Diotec Semiconductor | onsemi | onsemi | onsemi |
| Collector-Emitter Voltage (VCEO) | 25 V | 25 V | 25 V | 45 V | 45 V | 25 V |
| Continuous Collector Current | 800 mA | 800 mA | 800 mA | 800 mA | 800 mA | 800 mA |
| Power Dissipation at 25C | 625 mW | 625 mW | 625 mW | 625 mW | 625 mW | 625 mW |
| hFE Gain Selection | Group 25 (160-400) | Group 25 (160-400) | 160-400 | Group 25 (160-400) | ungrouped | Group 10 (100-250) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Diferenciadores clave
- Highest fT in the BC338 substitution set (frente a BC338-25)
- Pb-free formed-lead construction (frente a BC338-25ZL1)
- Guaranteed gain grouping for reproducible designs (frente a BC337)
Notas de diseño
Always include a flyback (freewheeling) diode across inductive loads such as relays and solenoids. Without clamping, the inductive kickback can exceed the 25 V VCEO rating and avalanche or destroy the transistor. A 1N4148 is sufficient for small relay coils; connect cathode to the supply rail and anode to the collector. Also add a 10k base-emitter bleed resistor so leakage or a floating MCU pin during reset cannot partially turn the device on.
Estimated: at 800 mA collector current, keep VCE below about 0.78 V to stay within the 625 mW dissipation limit (P = VCE x IC = 0.78 V x 0.8 A = 624 mW). In saturated switching, VCE(sat) of a few hundred millivolts keeps dissipation in the 200-400 mW range, but base drive must be roughly IC/10 (80 mA) for hard saturation per classic BJT forced-beta design practice. Above 25 C ambient, derate linearly per the onsemi datasheet curve.
The TO-92 formed-lead package is designed for 2.54 mm through-hole grids; verify the formed lead pitch (typically 1.27 mm body-exit spreading to 2.54 mm row spacing for the L1G formed variant) against your land pattern before committing the board. Keep base traces short to avoid picking up noise in amplifier stages, and place the base resistor close to the transistor. For wave soldering, the TO-92 body tolerates standard profiles, but avoid repeated rework cycles that stress the lead bonds.
In common-emitter amplifier stages, exploit the 210 MHz fT by keeping collector load resistors moderate (1k-10k) so the pole formed with collector capacitance stays well above the band of interest. The wide 160-400 hFE spread means bias networks should be emitter-degenerated (RE) rather than relying on a fixed base voltage; a rule of thumb is to drop 1 V or more across RE for gain stability across the gain spread and temperature.
Información de cumplimiento
The G suffix designates onsemi Pb-free / RoHS-compliant construction per distributor listings. REACH, halogen-free, and conflict-minerals status not stated in the provided data.
