BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon
N.º de pieza: BSS314PEH6327XTSA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.38 | $3,80 |
| 100 | $0.31 | $31,00 |
| 500 | $0.24 | $120,00 |
| 1.000 | $0.19 | $190,00 |
| 3.000 | $0.15 | $450,00 |
BSS314PEH6327XTSA1 Descripción general
A P-channel MOSFET is a type of field-effect transistor (FET) in which the conducting channel is formed by p-type semiconductor material and the device is turned on by applying a negative gate-to-source voltage. P-channel MOSFETs sit in the broader discrete-semiconductor hierarchy: FET -> MOSFET -> power MOSFET -> small-signal/small-power MOSFET -> surface-mount discrete. P-channel parts are particularly useful as high-side load switches because they can be driven directly from a logic-level signal without the charge pump required by N-channel high-side switches, simplifying USB power switching, battery load management, and LED driver topologies.
Key features of the BSS314PEH6327XTSA1 include a logic-level compatible -4.5V VGS drive, low Rds(on) for low conduction loss in the ON state, low gate charge for fast switching, and integrated ESD protection. The PG-SOT23-3 footprint uses industry-standard pinout (G-S-D) enabling drop-in replacement on most SOT-23 P-channel layouts. The automotive-grade qualification makes it suitable for AEC-Q101 demanding environments.
The OptiMOS chip architecture uses a trench-gate structure to minimize Rds(on) per unit silicon area and to keep gate charge Qg low for high-frequency switching efficiency. Compared to older planar P-channel generations, the trench process delivers roughly 2-3x lower on-resistance in the same die area, allowing the SOT-23 footprint to handle 1.5A continuous drain current with proper PCB copper heat-sinking.
Typical applications include USB VBUS load switching, battery protection and power path management in portable electronics, DC-DC converter high-side switches, LED backlight drivers in mobile and display modules, and reverse-polarity protection circuits. Its automotive qualification also opens it to body electronics modules and infotainment rails.
When designing with this part, observe the SOA limits carefully because SOT-23 has limited thermal headroom. Provide adequate copper pad area on source pin to keep junction temperature below 150 C, derate ID for ambient temperature above 25 C, and use a gate pull-down resistor to hold the device OFF during MCU reset. Place a TVS or zener from gate to source if the gate trace can see transient over-voltage during hot-plug events.
This page synthesizes distributor live pricing, Infineon same-family drop-in alternatives, cross-brand pin-compatible equivalents, and practical PCB thermal guidance that you will not find in the bare datasheet PDF.
Alternativas directas para BSS314PEH6327XTSA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSS314PEH6327XTSA1 (mismo factor de forma y huella) — difiere en Drain-Source Voltage (VDS), FET Type, Operating Temperature Range, Package, Technology.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSS316NH6327XTSA1
✅ Sustitución directa✓ En stock
$0.13 / unidad
Ver hoja de datos →BSS308PEH6327XTSA1
✅ Sustitución directa✓ En stock
$0.11 / unidad
Ver hoja de datos →BSS315PH6327XTSA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSS214NH6327XTSA1
✅ Sustitución directa✓ En stock
$0.09 / unidad
Ver hoja de datos →NTR4101PT1G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMP3098L-7
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSS314PEH6327XTSA1 Valores máximos y características eléctricas
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) @ TA=25C | -1.5 A |
| Power Dissipation (PD) @ TA=25C | 500 mW |
| RDS(on) max @ VGS=-10V | 140 mOhm |
| Gate Drive Voltage (max Rds(on)) | -4.5 V, -10 V |
| Encapsulado | PG-SOT23-3 (SOT-23-3) |
| Tipo de montaje | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +150 C (TJ) |
| Qualification | AEC-Q101 (Automotive) |
| Pin Configuration | G-D-S (Gate, Drain, Source) |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant |
Configuración de pines de BSS314PEH6327XTSA1
| Pin 1 | Gate — MOSFET gate control input (logic-level drive, -4.5V VGS to fully enhance) |
| Pin 2 | Source — Source terminal; connect to higher-voltage side for high-side P-channel switch |
| Pin 3 | Drain — Drain terminal; connect to lower-voltage load side for high-side switch |
Área de funcionamiento seguro (BSS314PE in SOT-23-3)
Aplicaciones típicas
BSS314PEH6327XTSA1 es adecuado para 7 aplicacións: USB VBUS Load Switch, Battery Reverse Polarity Protection, DC-DC Converter High-Side Switch, LED Backlight Driver Switch, Automotive Body Electronics Module, Power Multiplexer and OR-ing Diode, Portable / Wearable Device Power Path.
USB VBUS Load Switch
The BSS314PEH6327XTSA1 is well suited as a high-side load switch on USB VBUS rails between the 5V supply and downstream device port. Its P-channel topology eliminates the need for a gate charge pump because a logic-level 3.3V MCU GPIO driving the gate to 0V turns the FET on and pulling gate to 5V turns it off. At -1.5A continuous drain current with 140 mOhm RDS(on) the voltage drop is only 210 mV at full USB 3.0 load, well below the USB 5V +/-5% tolerance. The AEC-Q101 grade supports automotive USB charger ports. Place a 100 kOhm gate pull-down resistor to hold the switch off during MCU reset and add a TVS from VBUS to GND for hot-plug transients.
Recomendado
Battery Reverse Polarity Protection
The BSS314PEH6327XTSA1 works as a low-loss reverse-polarity protection FET in series between the battery terminal and the system load. In normal operation, the gate is tied to GND through a resistor and the P-channel turns on with VGS = -VBAT, conducting load current with conduction loss of ID squared times RDS(on). Compared to a Schottky diode solution, the FET drops roughly 200 mV versus 300-500 mV Schottky Vf, recovering 1-3% of battery capacity. The -30V VDS rating protects against 24V industrial battery transients and jump-start events on 12V automotive systems. Add a Zener from gate to source to clamp VGS during inductive load dump spikes.
Recomendado
DC-DC Converter High-Side Switch
The BSS314PEH6327XTSA1 functions as the high-side control switch in small buck or load-disconnect circuits where a logic-level P-channel FET is preferred over an N-channel to avoid the boost capacitor. At switching frequencies up to 100 kHz the low gate charge of the OptiMOS process keeps switching losses under 5 mW per cycle, enabling efficient point-of-load regulation. The -30V VDS rating is comfortable for 12V input rails including transient margin, and the 140 mOhm RDS(on) keeps conduction loss at 0.21W at -1.5A. Place a 10 kOhm gate resistor to dampen ringing from the gate-source capacitance and minimize EMI.
Recomendado
LED Backlight Driver Switch
In mobile phone and display-module backlight circuits, the BSS314PEH6327XTSA1 acts as the PWM-controlled high-side switch that pulses the LED string current on and off. Its logic-level -4.5V gate drive allows direct connection to a 3.3V MCU PWM output without level translation, and the fast switching transitions minimize the dead-time during PWM dimming cycles. At -1.5A continuous rating the part drives typical 4-6 LED strings at 100-300 mA each, and the SOT-23 footprint saves board space versus DPAK alternatives. The AEC-Q101 grade qualifies it for automotive dashboard and infotainment display backlights.
Recomendado
Automotive Body Electronics Module
The BSS314PEH6327XTSA1's AEC-Q101 automotive qualification makes it a strong fit for body control modules where multiple low-current loads must be switched reliably across temperature extremes from -40 C to +125 C. Typical circuits include interior lighting MOSFETs, door lock drivers, and accessory power rails where the -1.5A rating covers most lamp and small motor loads. The trench OptiMOS process delivers stable RDS(on) versus temperature, important for predictable voltage drop across cold-crank and hot-soak conditions. Designers should derate to roughly -0.8A at TA=85 C ambient on a 1 cm^2 source copper pad for reliable long-term operation.
Recomendado
Power Multiplexer and OR-ing Diode
The BSS314PEH6327XTSA1 implements a low-loss power multiplexer or OR-ing function between two power sources such as a wall adapter and a USB input. By tying two source pins together at the load and routing each FET's gate independently, the device with the higher source voltage naturally wins conduction and prevents reverse current flow into the lower-voltage source. The 140 mOhm RDS(on) replaces Schottky OR-ing diodes with 80% lower voltage drop, and the -30V rating handles 12V adapter inputs with margin. Add a small Schottky from gate to source on each FET to ensure fast turn-off during source transitions.
Recomendado
Portable / Wearable Device Power Path
In portable and wearable electronics such as wireless earbuds, smartwatches, and fitness bands, the BSS314PEH6327XTSA1 provides a tiny footprint P-channel load switch between the Li-ion battery and the system PMIC. Its SOT-23-3 package occupies less than 9 mm^2 of PCB area, ideal for space-constrained wearable designs, and the -30V VDS rating far exceeds the 4.2V maximum battery voltage with ample transient margin. At -1.5A continuous current the FET supports charging currents up to 1 C on small Li-ion cells. The logic-level -4.5V gate threshold enables direct drive from a 1.8V or 3.3V power-management GPIO without level shifters.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSS314PEH6327XTSA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSS316NH6327XTSA1 | BSS308PEH6327XTSA1 | BSS315PH6327XTSA1 | NTR4101PT1G | DMP3098L-7 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Diodes Incorporated |
| Package | PG-SOT23-3 | PG-SOT23-3 - same | PG-SOT23-3 - same | PG-SOT23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | -30 V | -30 V | -30 V | -30 V | -30 V | -30 V |
| Continuous Drain Current (ID) | -1.5 A | -1.5 A | -2 A | -1.5 A | -3.6 A | -3.8 A |
| Power Dissipation (PD) | 500 mW | 500 mW | 500 mW | 500 mW | 1.25 W | 1.25 W |
| Automotive Grade (AEC-Q101) | Yes | No | Yes | No | No | No |
Diferenciadores clave
- AEC-Q101 automotive grade at standard SOT-23 footprint (frente a BSS316NH6327XTSA1)
- Higher continuous drain current rating (-2A vs -1.5A) (frente a BSS308PEH6327XTSA1)
- Cross-brand availability from multiple qualified vendors (frente a NTR4101PT1G)
Notas de diseño
Estimated: at ID=-1.5A continuous and RDS(on)=140 mOhm, conduction loss is roughly I^2 x R = 0.315W. The SOT-23-3 package is rated for 500mW at TA=25C with a recommended source pad of at least 1 cm^2 of 1 oz copper to keep theta_JA around 200 C/W. Without adequate copper the junction will exceed 150 C and the device will thermal-limit. Derate ID linearly: at TA=70C expect roughly -1A continuous; at TA=85C automotive ambient derate to about -0.8A. The drain pin carries the load current thermally but the source pin is the dominant heat path due to the larger lead frame.
Place a 100 kOhm gate-to-source pull-down resistor directly across the gate and source pins to hold the FET OFF during MCU reset or power-up sequencing. Add a 10 kOhm gate series resistor if the gate trace exceeds 10 mm to dampen ringing from gate-source capacitance. Keep the source copper pad continuous and unbroken - vias or thermal relief cuts increase source-pin resistance and degrade RDS(on) in the assembled PCB. Use a small Schottky diode or 5.1V Zener from gate to source if the gate drive trace can see transient over-voltage during load-dump events.
Do not exceed -30V VDS - the part will avalanche and may be permanently damaged. Do not drive the gate above +/-20V VGS absolute maximum, even briefly - typical TVS on gate to source is recommended for inductive load applications. Do not assume the SOT-23 tab (when present) is a separate thermal pad - on P-channel SOT-23-3 parts the tab is typically connected to the drain internally, not the source. Verify your specific variant's pin diagram against the datasheet before laying out the PCB. Finally, derate ID for pulsed loads using the thermal impedance curves, not the DC rating.
Información de cumplimiento
AEC-Q101 (automotive) qualified per Infineon product family datasheet. RoHS and REACH compliant per DigiKey and Mouser listings. Lead-free and halogen-free per JEDEC J-STD-020 MSL1 rating.
