BZT52C8V2LP - 8.2V 250mW Zener Diode, DFN1006-2 | Diodes Incorporated
N.º de pieza: BZT52C8V2LP ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.18 | $0,18 |
| 10 | $0.14 | $1,40 |
| 100 | $0.09 | $9,00 |
| 500 | $0.06 | $30,00 |
| 1.000 | $0.045 | $45,00 |
| 5.000 | $0.034 | $170,00 |
BZT52C8V2LP Descripción general
A Zener diode is a specialized pn-junction diode engineered to operate in reverse breakdown at a precisely controlled voltage. Unlike a rectifier diode that is damaged by reverse breakdown, a Zener is designed to repeatedly clamp at its nominal Vz, making it the fundamental building block for voltage reference, voltage regulation, and over-voltage protection circuits. Within the broader semiconductor taxonomy, the BZT52C8V2LP belongs to the discrete semiconductor family, specifically the Zener diode sub-category, used as a low-power precision reference in space-constrained designs.
Key electrical characteristics include a 8.2V nominal Zener voltage (Vz) at the standard test current, ±6% tolerance across operating conditions, a maximum forward voltage (Vf) of 900 mV at 10 mA, and a 250 mW continuous power dissipation rating. The X1-DFN1006-2 footprint enables placement in mobile phones, wearables, hearing aids, IoT sensors, and other miniaturized products where every square millimeter counts.
The planar die construction provides stable breakdown characteristics and tight tolerance over temperature, while the leadless DFN package minimizes parasitic inductance - useful for transient suppression on data lines and low-voltage rails. Operating and storage temperature ranges span -55C to +150C, suiting both consumer and industrial environments.
Typical applications include voltage clamping on low-voltage DC rails in portable devices, secondary protection on USB-C and HDMI data lines, precision reference for ADCs and DACs in mixed-signal ICs, and over-voltage protection on lithium-ion battery management systems.
When designing with this device, derate power dissipation to 70 mW or less to keep junction temperature rise acceptable in the 0.5mm-tall DFN package. Always place the Zener directly across the protected node with the shortest possible trace to ground, since lead inductance can defeat clamping during fast transients.
This page synthesizes distributor stock data, same-package drop-in alternatives, and PCB-level design notes that go beyond the manufacturer datasheet to support faster, more reliable sourcing decisions.
Alternativas directas para BZT52C8V2LP — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BZT52C8V2LP-7
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BZT52C8V2LP-7B
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
BZT52C8V2S-7-F
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BZT52C8V2-7-F
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BZT52C8V2T-7
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BZT52C8V2-TP
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BZT52C8V2LP Valores máximos y características eléctricas
| Zener Voltage (Nominal Vz) | 8.2 V |
| Zener Voltage Tolerance | ±6% |
| Power Dissipation (Pd) | 250 mW |
| Forward Voltage (Vf max @ If) | 900 mV @ 10 mA |
| Encapsulado | X1-DFN1006-2 (1.0 mm x 0.6 mm) |
| Tipo de montaje | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C |
| Storage Temperature Range | -55C to +150C |
| Diode Configuration | Single |
| Construction | Planar Die |
| Estado RoHS | Compliant |
| Nivel MSL | 1 |
| Lead-Free | Yes |
| Number of Terminals | 2 |
| Package Family | DFN (leadless SMD) |
Configuración de pines de BZT52C8V2LP
| Pin 1 | Cathode — Cathode terminal (K) - marked with a dot on the top-side laser mark per datasheet |
| Pin 2 | Anode — Anode terminal (A) - connected to the bottom thermal/exposed pad |
Aplicaciones típicas
BZT52C8V2LP es adecuado para 6 aplicacións: Portable Device Voltage Clamping, USB-C and HDMI Data Line Protection, Precision Voltage Reference for ADCs and DACs, Lithium-Ion Battery Over-Voltage Protection, IoT Sensor Node Voltage Reference, Industrial Control Panel Signal Conditioning.
Portable Device Voltage Clamping
The BZT52C8V2LP's 8.2V nominal Zener voltage and 250 mW power dissipation make it well suited for clamping low-voltage DC rails in portable and battery-powered designs. Placed in parallel with the protected IC supply pin and ground, it diverts transient over-voltage events away from sensitive components such as PMICs, display drivers, and audio amplifiers. The DFN1006-2 footprint (1.0 mm x 0.6 mm) is small enough to fit next to QFN microcontroller decoupling capacitors without consuming useful PCB area. The 900 mV maximum forward voltage at 10 mA also allows it to be used as a low-side reverse-polarity blocker when wired with the anode to ground. Compared to a TVS diode, the BZT52C8V2LP offers tighter breakdown tolerance (±6%) and lower leakage, but at the cost of slower response to fast transients.
Recomendado
USB-C and HDMI Data Line Protection
The BZT52C8V2LP can be used as secondary protection on USB-C VBUS, HDMI TMDS lines, and other low-voltage data interfaces that must survive ESD and surge events. Its 8.2V rating sits just above the 5V USB nominal level, providing headroom for in-rush transients while clamping fast over-voltage events to within the safe operating area of downstream controllers. The 250 mW continuous dissipation is sufficient for the brief surge currents typical of consumer cable discharge events. Engineers typically place a primary TVS array upstream of the connector and use the BZT52C8V2LP as a secondary clamp closer to the SoC pins. The X1-DFN1006-2 leadless package keeps parasitic inductance below 1 nH, which is critical for maintaining clamping effectiveness above 100 MHz.
Recomendado
Precision Voltage Reference for ADCs and DACs
The BZT52C8V2LP's planar die construction and 8.2V nominal voltage make it a usable low-cost reference for low-resolution ADCs and DACs in mixed-signal systems. In a 3.3V MCU design, the BZT52C8V2LP can be biased from the 5V rail through a series resistor to produce a stable reference for the ADC's external reference input. While its ±6% tolerance is too loose for 16-bit or higher converters, it is acceptable for 8 to 10-bit applications such as battery monitoring, temperature sensing, and potentiometer digitizing. The 250 mW rating allows it to source several milliamps continuously. Pair with a precision op-amp buffer such as the AD8534ARZ-REEL to drive multiple ADC channels from a single Zener reference.
Recomendado
Lithium-Ion Battery Over-Voltage Protection
The BZT52C8V2LP can serve as a secondary over-voltage clamp on lithium-ion battery packs, where cell voltages above 4.2V can damage the cell and create safety hazards. Wired in parallel with the protection IC's over-voltage detection node, the BZT52C8V2LP provides a hardware-level safety clamp independent of firmware. The 8.2V rating is well above the 4.2V single-cell maximum but is appropriate for 2-cell battery packs (8.4V nominal) where over-voltage on either cell must trigger protection. The 250 mW continuous dissipation handles brief fault events but is not intended for sustained over-voltage clamping - the protection FET should disconnect the pack before the BZT52C8V2LP reaches thermal limits.
Recomendado
IoT Sensor Node Voltage Reference
In battery-powered IoT sensor nodes, the BZT52C8V2LP provides a stable voltage reference for sensor excitation and analog signal conditioning. The 8.2V can be divided down to a lower rail using a simple resistor divider, or used directly to power a 5V analog sensor from a 9V battery. The DFN1006-2 footprint fits in sensor housings smaller than 5 mm on a side, enabling integration into disposable medical patches, asset tracking tags, and environmental monitors. The MSL Level 1 rating allows direct reflow soldering without dry-pack handling, simplifying high-volume IoT device manufacturing.
Recomendado
Industrial Control Panel Signal Conditioning
In industrial control panels, the BZT52C8V2LP clamps 24V control signals to a safe level for low-voltage logic inputs on PLCs and HMIs. The 8.2V rating is suitable for clamping the high-level excursion of 24V digital signals after resistive division, protecting MCU GPIO pins from over-voltage events. The -55C to +150C operating range covers the full industrial temperature envelope including unheated enclosures. The 250 mW rating allows continuous operation with intermittent fault currents. Engineers often place the BZT52C8V2LP on each digital input terminal block alongside a series resistor to form a complete input protection network.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BZT52C8V2LP — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BZT52C8V2LP-7 | BZT52C8V2LP-7B | BZT52C8V2S-7-F | BZT52C8V2-7-F | BZT52C8V2T-7 | BZT52C8V2-TP |
|---|---|---|---|---|---|---|---|
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Micro Commercial Components |
| Package | X1-DFN1006-2 (1.0x0.6 mm) | X1-DFN1006-2 (1.0x0.6 mm) - same | X1-DFN1006-2 (1.0x0.6 mm) - same | SOD-323 (1.8x1.35 mm) - different footprint | SOD-123 (3.6x1.8 mm) - different footprint | SOD-523 (1.6x0.8 mm) - different footprint | SOD-123 (3.6x1.8 mm) - different footprint |
| Zener Voltage (Nominal) | 8.2 V | 8.2 V | 8.2 V | 8.2 V | 8.2 V | 8.2 V | 8.2 V |
| Tolerance | ±6% | ±6% | ±6% | ±6% | ±6% | ±6% | ±6% |
| Power Dissipation | 250 mW | 250 mW | 250 mW | 250 mW | 250 mW | 250 mW | 250 mW |
| Forward Voltage (Vf max @ If) | 900 mV @ 10 mA | 900 mV @ 10 mA | 900 mV @ 10 mA | 900 mV @ 10 mA | 900 mV @ 10 mA | 900 mV @ 10 mA | 900 mV @ 10 mA |
| Operating Temperature Range | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Diferenciadores clave
- Ultra-compact DFN1006-2 footprint for space-constrained designs (frente a BZT52C8V2-7-F (SOD-123))
- MSL Level 1 simplifies high-volume manufacturing (frente a BZT52C8V2T-7 (SOD-523))
- Planar die construction for stable temperature coefficient (frente a BZT52C8V2-TP (Micro Commercial Components))
Notas de diseño
The BZT52C8V2LP DFN1006-2 package has limited thermal mass. At 250 mW continuous dissipation and 25C ambient, junction temperature stays within limits, but above 50C the part must be derated. Estimated: assuming theta_JA of 500 C/W for the 0.5 mm-tall DFN package, a 100 mW load produces a 50C junction rise. For continuous clamping above 100 mW in enclosed designs, add copper thermal pads or select a larger package (SOD-123 handles 500 mW).
Place the BZT52C8V2LP directly across the protected node with the shortest possible trace to ground. The leadless DFN package has minimal parasitic inductance, but long PCB traces (>5 mm) can defeat clamping during sub-microsecond transients. Use a ground pour on the top layer and stitch vias near the anode pad to keep the high-frequency return path short. Avoid running signal traces under the Zener.
Do not exceed the 250 mW continuous power rating or the part will fail short. The Zener voltage tolerance of ±6% means an 8.2V nominal device can clamp as low as 7.71V or as high as 8.69V - verify this is acceptable for your reference application. When using multiple Zeners in series for higher voltage references, the tolerances add in quadrature and the leakage current of each part contributes to the total reference error.
Información de cumplimiento
RoHS and REACH compliant per Diodes Incorporated product page. Not AEC-Q100 qualified (consumer/industrial grade). MSL Level 1 per JEDEC J-STD-020.
