DMP2066LSN-7 - 20V P-Channel MOSFET, 4.6A, 40mΩ | Diodes Inc
N.º de pieza: DMP2066LSN-7 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.36 | $0,36 |
| 10 | $0.27 | $2,70 |
| 100 | $0.18 | $18,00 |
| 500 | $0.14 | $70,00 |
| 1.000 | $0.11 | $110,00 |
| 3.000 | $0.083 | $249,00 |
DMP2066LSN-7 Descripción general
A P-channel enhancement-mode MOSFET is a type of field-effect transistor that conducts when a negative gate-to-source voltage (relative to its source pin) is applied. P-channel MOSFETs are commonly used as high-side switches in battery-powered and low-voltage systems, where their ability to turn on with a logic-level low signal simplifies gate-drive circuitry. Within the broader taxonomy, a P-channel MOSFET belongs to the MOSFET family, which in turn sits under discrete semiconductors and power management devices, providing switching and amplification functions for current flow in electronic circuits.
Key features include a maximum drain-to-source voltage of 20V, 4.6A continuous drain current at TA = 25°C, a typical on-resistance of 40 mΩ at VGS = -4.5V (datasheet also lists 70 mΩ at VGS = -2.5V), 1.25W power dissipation at TA = 25°C, and built-in ESD protection. The trench gate structure minimizes conduction losses and switching charge, while the SC-59-3 (SOT-23-3 equivalent) package provides a footprint compatible with industry-standard discrete layouts and reduces board area compared to larger DPAK or SO-8 alternatives.
Typical applications for the DMP2066LSN-7 include load switching in portable electronics, battery protection circuits, USB power rails, LED driver switches, low-side PWM dimming, and power-rail ORing. The AEC-Q101 qualification indicates the device is suitable for high-reliability automotive designs, while RoHS compliance and lead-free construction meet modern environmental requirements for consumer and industrial products.
When designing with this part, confirm that switching transients and load-dump events in 12V automotive systems stay within the 20V VDS rating, and ensure that gate-drive voltages remain within the rated VGS range (typically ±8V absolute maximum). For PWM applications, the low gate charge reduces driver losses at high switching frequencies.
Alternativas directas para DMP2066LSN-7 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
DMP2066LSS-7
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AO3401A
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SI2301
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FDN360P
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
VB2240
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMP2066LSN-7 Valores máximos y características eléctricas
| FET Type | P-Channel MOSFET, Enhancement Mode |
| Drain-to-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID) at TA = 25°C | 4.6 A |
| Power Dissipation (PD) at TA = 25°C | 1.25 W |
| On-Resistance (RDS(on)) at VGS = -4.5V | 40 mΩ (max) |
| On-Resistance (RDS(on)) at VGS = -2.5V | 70 mΩ (max) |
| Minimum Gate Drive Voltage | 1.8 V |
| Encapsulado | SC-59-3 (SOT-23-3 equivalent) |
| Tipo de montaje | Surface Mount |
| ESD Protection | Built-in (per datasheet) |
| AEC-Q101 Qualified | Yes (qualified to AEC-Q101 standards for high reliability) |
| RoHS Compliance | Lead Free By Design / RoHS Compliant |
| Gate Charge | Low (trench technology, datasheet specific value not extracted) |
Configuración de pines de DMP2066LSN-7
| Pin 1 | Gate — Gate control input (drive low to turn on P-channel MOSFET) |
| Pin 2 | Source — Source terminal (typically tied to higher-voltage rail) |
| Pin 3 | Drain — Drain terminal (load connection) |
Área de funcionamiento seguro (estimated from datasheet pulse and continuous ratings)
Aplicaciones típicas
DMP2066LSN-7 es adecuado para 6 aplicacións: Battery Protection & Load Switch, USB Power Rail Switching, LED Driver Switch (PWM Dimming), Power Rail ORing & Redundancy, Automotive Body Control Modules, Portable / Wearable Device Power Switching.
Battery Protection & Load Switch
The DMP2066LSN-7 functions as a high-side P-channel load switch between a battery and downstream circuitry, leveraging its 20V VDS rating and 4.6A continuous drain current to handle typical 1S Li-ion (4.2V) and 2S (8.4V) battery pack rails. The 40 mΩ RDS(on) at VGS = -4.5V keeps conduction loss low at typical load currents under 2A, while the 1.8V minimum gate drive allows direct control from low-voltage MCUs without a gate driver. Designers commonly place it on the high side of the load path to provide reverse-polarity blocking and inrush current limiting, with the source tied to VBAT and the drain to the load. The SC-59-3 package is small enough for compact wearable and IoT devices.
Recomendado
USB Power Rail Switching
The DMP2066LSN-7 is well-suited as a high-side switch for the VBUS rail in USB ports, where its 20V VDS rating tolerates USB power-delivery transient excursions and its P-channel topology enables active-low enable control from a host MCU. The 40 mΩ RDS(on) limits voltage drop to 40 mV at 1A load and 200 mV at 5A, sufficient for USB 2.0/3.0 power switching within tolerance. A typical circuit ties the source to +5V VBUS, the drain to the load connector, and the gate to a GPIO pulled up through a resistor, with the MCU pulling the gate low to enable power. The trench technology and low gate charge reduce switching transients at hot-plug events.
Recomendado
LED Driver Switch (PWM Dimming)
In PWM-dimmed LED driver circuits, the DMP2066LSN-7 acts as a low-side or high-side switch that is rapidly toggled to modulate average LED current and brightness. Its low gate charge and trench technology enable fast switching at 1 kHz to 20 kHz PWM frequencies without significant driver-stage losses, while the 4.6A continuous drain rating supports multi-LED strings drawing up to several amps total. The 1.25W power dissipation and SC-59-3 thermal performance are adequate for PWM duty cycles under 100% in compact backlight and indicator designs. AEC-Q101 qualification also makes the part attractive for automotive interior lighting and dashboard backlights.
Recomendado
Power Rail ORing & Redundancy
For redundant power architectures in telecom, networking, or industrial equipment, the DMP2066LSN-7 can implement a low-cost ORing switch between two DC supply rails. The P-channel orientation allows the source to float and the body diode to conduct during initial turn-on, then the gate is pulled low to enable fully-enhanced MOSFET operation, minimizing drop and dissipation. Its 40 mΩ RDS(on) at 1A load gives 40 mV drop, and at higher currents the device handles up to 4.6A continuous per channel. Designers place it back-to-back (two MOSFETs source-to-source) for true bidirectional blocking with low forward drop.
Recomendado
Automotive Body Control Modules
With AEC-Q101 qualification and a 20V VDS rating, the DMP2066LSN-7 is appropriate for body control module (BCM) loads such as mirror controls, seat motors, lighting, and accessory switches. Its 4.6A continuous current covers typical small-motor and lamp loads, while the trench technology provides the ruggedness needed for automotive electrical-transient environments including jump-start and reverse-battery conditions. The P-channel topology also enables simple high-side driving with logic-level signals from BCM microcontrollers. Compact SC-59-3 packaging helps meet the high-density PCB requirements of modern BCMs.
Recomendado
Portable / Wearable Device Power Switching
The DMP2066LSN-7 is ideal for portable and wearable electronics where PCB area is at a premium and battery-life optimization is critical. Its SC-59-3 footprint occupies roughly 9 mm², much smaller than SO-8 or DPAK alternatives, and its low RDS(on) of 40 mΩ at VGS = -4.5V limits wasted power when switching rails to sensors, displays, or radios. The 1.8V minimum gate drive allows direct control from coin-cell-powered MCUs that operate below 3V. Designers use it to switch off sub-circuits during sleep, helping wearables achieve multi-month standby times on small primary cells.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para DMP2066LSN-7 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | DMP2066LSS-7 | AO3401A | SI2301 | FDN360P | VB2240 |
|---|---|---|---|---|---|---|
| Brand | Diodes Incorporated | Diodes Incorporated | Alpha & Omega Semiconductor | Vishay Siliconix | onsemi | VBsemi |
| Package | SC-59-3 / SOT-23-3 | SC-59-3 / SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) |
| Drain-to-Source Voltage (VDS) | 20 V | 20 V | 30 V | 20 V | 30 V | 20 V |
| Continuous Drain Current (ID) | 4.6 A | 4.6 A | 4.0 A | 2.6 A | 2.0 A | 5.0 A |
Diferenciadores clave
- AEC-Q101 automotive reliability qualification (frente a SI2301 / FDN360P)
- Lower RDS(on) than most 20V-class SOT-23 P-channel peers (frente a SI2301 (Vishay Siliconix))
- Higher continuous drain current than typical SOT-23 P-channel alternatives (frente a FDN360P (onsemi))
Notas de diseño
Estimated: at 4.6A continuous drain current on the standard 1" × 1" FR-4 test board with 2 oz copper, the DMP2066LSN-7 dissipates approximately 0.85W at full load (4.6A × 40 mΩ × load factor). The SC-59-3 package is rated 1.25W at TA = 25°C, so for continuous high-current operation the device must be derated by ambient temperature and copper area. Adding a copper pour on the drain pad and increasing PCB thermal mass extends safe operation, but for sustained loads above 2A an SOT-23 with thermal pad or larger package is recommended.
Place the source and drain copper pours directly under and around the SC-59-3 footprint to maximize heat removal. Keep the gate trace short and away from switching nodes to prevent dv/dt-induced false turn-on; for high-side P-channel switches a gate pull-up resistor of 10 kΩ to 100 kΩ is typical to define the off state. Add a small gate-to-source resistor (typically 10 kΩ) to bleed off residual gate charge when the device is held off, and consider a TVS across drain-to-source if the load is inductive.
Do not exceed the absolute maximum VGS rating of typically ±8V (verify in datasheet); driving the gate with voltages beyond this can puncture the gate oxide. In 12V automotive systems, ensure that load-dump transients (up to ~35V on older specs) are clamped externally, since the DMP2066LSN-7 20V VDS rating does not survive raw load-dump pulses. Finally, confirm the AEC-Q101 grade meets your project's automotive reliability target - the -7 suffix does not guarantee Q100/Q101 in all cases, always reference the datasheet marking and qualification report.
Información de cumplimiento
RoHS compliant and Lead-free By Design per Diodes Incorporated datasheet. Qualified to AEC-Q101 standards for high reliability (automotive). REACH compliance assumed under Diodes Incorporated corporate policy but not extracted verbatim from datasheet.
