EP3SE80F1152I4N - 80K LE Stratix III E FPGA, 1152-FCBGA | Intel
N.º de pieza: EP3SE80F1152I4N ⚠ Última compra| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2546.04 | $2.546,04 |
| 10 | $2420 | $24.200,00 |
| 25 | $2310 | $57.750,00 |
| 50 | $2200 | $110.000,00 |
| 100 | $2100 | $210.000,00 |
EP3SE80F1152I4N Descripción general
An FPGA (Field Programmable Gate Array) is a semiconductor integrated circuit composed of configurable logic blocks (CLBs), programmable interconnect, and dedicated silicon resources such as block RAM, DSP blocks, transceivers, and PLLs. Within the broader programmable logic hierarchy, FPGAs sit alongside CPLDs as the most flexible digital implementation medium: an FPGA can emulate any digital function up to its resource budget and is typically selected when ASIC NRE costs cannot be justified or when time-to-market is critical. The Stratix III E family targets high-performance digital signal processing, high-speed serial connectivity, and embedded processor applications.
Key features of the EP3SE80F1152I4N include 80,000 logic elements, 6,843,392 embedded memory bits organized as M9K/M144K blocks, dedicated DSP blocks for fixed- and floating-point arithmetic, and high-speed transceivers supporting multi-gigabit serial protocols. The 1152-ball FCBGA package uses flip-chip interconnect to the substrate, providing superior electrical performance and thermal dissipation versus wire-bond equivalents.
The architecture integrates hard IP such as PCI Express hard IP blocks, external memory interfaces (DDR/DDR2/QDRII), and multiple PLLs for clock management. Compared with earlier Stratix generations, Stratix III E devices introduce a programmable power technology that reduces dynamic power while preserving performance, addressing one of the historic disadvantages of high-density FPGAs in power-constrained systems.
Typical applications include high-speed DSP pipelines (radar, software-defined radio, medical imaging), protocol bridging and packet processing in telecom/networking line cards, ASIC prototyping and emulation, and high-bandwidth data acquisition systems. The 744 user I/Os and 1.1 V core make it particularly well-suited to systems requiring parallel high-speed interfaces combined with on-chip processing.
Designers should note that FCBGA packages require controlled-impedance PCB stackups, microvia or via-in-pad technology, and X-ray inspection of solder joints. Power estimation should be performed using the Quartus II PowerPlay early power estimator before logic synthesis to size voltage regulator rails and thermal solution correctly.
This page synthesizes distributor pricing, drop-in same-family alternatives from the Site MPN list, and practical design notes not aggregated on any single distributor page.
Alternativas directas para EP3SE80F1152I4N — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con EP3SE80F1152I4N (mismo factor de forma y huella) — difiere en Operating Temperature, Speed Grade, Package, Process Technology, Mounting Type.
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EP3SE80F1152I4LN
✅ Sustitución directa✓ En stock
$1995 / unidad
Ver hoja de datos →EP3SE80F1152I4
✅ Sustitución directa✓ En stock
$2050 / unidad
Ver hoja de datos →EP3SE80F1152I3N
✅ Sustitución directa✓ En stock
$1395 / unidad
Ver hoja de datos →EP3SE80F1152I3
✅ Sustitución directa✓ En stock
$1950 / unidad
Ver hoja de datos →EP3SE80F1152C4N
✅ Sustitución directa✓ En stock
$1395 / unidad
Ver hoja de datos →EP3SE80F1152C4LN
✅ Sustitución directa✓ En stock
$1907.77 / unidad
Ver hoja de datos →EP3SE80F1152I4N Valores máximos y características eléctricas
| Series | Stratix III E |
| Logic Elements | 80,000 |
| Embedded Memory Bits | 6,843,392 bits |
| User I/O Count | 744 |
| Encapsulado | 1152-BBGA, FCBGA (flip-chip) |
| Process Technology | 65 nm CMOS |
| Core Voltage | 1.1 V |
| Maximum Internal Frequency | 450 MHz |
| Operating Temperature Grade | Industrial (-40C to +100C junction) |
| Speed Grade | I4 |
| Tipo de memoria | SRAM-based configuration |
| Configuration Method | JTAG / Passive Serial / Fast Passive Parallel (IEEE 1149.1 BST) |
| I/O Standards Supported | LVDS, LVCMOS, SSTL, HSTL, PCI, PCI-X |
| Tipo de montaje | Surface Mount (BGA) |
| Estado RoHS | Compliant |
| Nivel MSL | 3 (per JEDEC J-STD-020) |
Guía de configuración de pines de EP3SE80F1152I4N 1152-bbga, fcbga (flip-chip)
Configuración de pines para EP3SE80F1152I4N (encapsulado 1152-bbga, fcbga (flip-chip)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para EP3SE80F1152I4N.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
EP3SE80F1152I4N es adecuado para 6 aplicacións: Wireless Baseband DSP, High-Speed Packet Processing, ASIC Prototyping and Emulation, Medical Imaging Pipeline, Software-Defined Radio Platform, High-Bandwidth Data Acquisition.
Wireless Baseband DSP
The EP3SE80F1152I4N is well-suited to wireless baseband signal processing because of its dedicated DSP blocks (9-bit multipliers, adders, and accumulators) integrated alongside 80,000 logic elements. The 6,843,392 bits of embedded M9K/M144K block RAM provide coefficient and data buffering for FIR filters, FFT pipelines, and channel equalizers without consuming external memory bandwidth. The 744 user I/Os allow parallel connection to multiple ADC/DAC front ends and CPRI/OBSAI framer interfaces. Operating at 450 MHz on the I4 speed grade, the device can sustain multi-antenna LTE PHY layer processing in a single chip, eliminating the need for an external DSP farm and reducing board area in compact 4G/5G small-cell base stations.
Recomendado
High-Speed Packet Processing
In telecom and data-center networking line cards, the EP3SE80F1152I4N serves as a deep packet inspection and traffic manager engine. The 80,000 logic elements are sufficient to implement lookup tables, stateful flow classification, and queue scheduling logic at 10 Gbps line rates, while the 6.8 Mbits of embedded RAM absorb packet bursts between forwarding decisions. The 744 user I/Os interface to external network processors and tri-mode SFP+/QSFP cages, and the integrated hard IP for PCI Express and external memory interfaces (DDR2/QDRII) simplifies attachment to host CPUs and deep buffer memory. Designers leverage Stratix III E's programmable power technology to manage the thermal budget in dense multi-FPGA line cards.
Recomendado
ASIC Prototyping and Emulation
The EP3SE80F1152I4N is widely deployed in ASIC and ASSP prototyping flows, where Quartus II maps RTL designs onto the fabric for hardware verification at near-real-time speeds. The 80,000 logic elements can absorb approximately 20 million ASIC gates (depending on utilization), and the 744 user I/Os map to physical package pins enabling direct connection to the target ASIC's external interface. Multi-FPGA partitioning tools split large ASIC designs across several Stratix III E devices, with high-speed LVDS channels bridging between FPGAs at 1 Gbps per pair. Industrial temperature grade operation allows prototyping of automotive and aerospace ASICs in environmental chambers, accelerating functional verification against specification.
Recomendado
Medical Imaging Pipeline
In ultrasound and CT imaging systems, the EP3SE80F1152I4N performs beamforming, image reconstruction, and real-time filtering on raw RF data streams from transducer arrays. The DSP blocks accelerate multiply-accumulate operations essential for finite-impulse-response beamforming at ultrasound sampling rates, while the embedded block RAM serves as line buffers for image reconstruction kernels. The 744 user I/Os parallel-connect to multi-channel ADC front ends at LVDS rates up to 840 Mbps per pair, sustaining aggregate data rates of several gigabits per second. Industrial temperature operation ensures reliable performance in hospital equipment and ambulatory diagnostic carts where ambient conditions vary.
Recomendado
Software-Defined Radio Platform
Software-defined radio (SDR) systems benefit from the EP3SE80F1152I4N's combination of high fabric density, embedded memory, and DSP blocks, which together implement wideband digital down-conversion, channelization, and demodulation for multi-standard waveforms. The 80,000 logic elements run FFT-based OFDM processors for Wi-Fi/LTE/custom waveforms simultaneously, while the 6.8 Mbits of block RAM hold frequency-domain samples and channel equalizer coefficients. The 1152-ball FCBGA package provides the I/O density needed to interface with multiple analog front ends and high-speed data converters, enabling a single FPGA to replace what would otherwise require a DSP-plus-FPGA partition. Military and aerospace SDR programs adopt this device for its industrial temperature grade and long-term availability in defense supply chains.
Recomendado
High-Bandwidth Data Acquisition
The EP3SE80F1152I4N is an excellent fit for high-channel-count data acquisition systems used in scientific instrumentation, radar digitizers, and industrial test equipment. The 744 user I/Os aggregate multiple LVDS data streams from parallel ADC arrays, with the embedded block RAM serving as a deep FIFO to absorb bursts before forwarding to host processors via PCI Express. The DSP blocks execute digital down-conversion and pulse compression in radar receivers, offloading compute from downstream processors. Operating at industrial temperature ensures reliable performance in outdoor radar installations and factory-floor test systems. Designers typically pair this FPGA with external DDR2/QDRII memory to extend capture depth for long-duration signal recordings.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para EP3SE80F1152I4N — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | EP3SE80F1152I4LN | EP3SE80F1152I4 | EP3SE80F1152I3N | EP3SE80F1152I3 | EP3SE80F1152C4N | EP3SE80F1152C4LN |
|---|---|---|---|---|---|---|---|
| Brand | Intel (formerly Altera) | Intel (formerly Altera) | Intel (formerly Altera) | Intel (formerly Altera) | Intel (formerly Altera) | Intel (formerly Altera) | Intel (formerly Altera) |
| Package | 1152-BBGA, FCBGA | 1152-BBGA, FCBGA - same | 1152-BBGA, FCBGA - same | 1152-BBGA, FCBGA - same | 1152-BBGA, FCBGA - same | 1152-BBGA, FCBGA - same | 1152-BBGA, FCBGA - same |
| Logic Elements | 80,000 | 80,000 | 80,000 | 80,000 | 80,000 | 80,000 | 80,000 |
| Embedded Memory Bits | 6,843,392 | 6,843,392 | 6,843,392 | 6,843,392 | 6,843,392 | 6,843,392 | 6,843,392 |
| User I/Os | 744 | 744 | 744 | 744 | 744 | 744 | 744 |
| Speed Grade | I4 (fastest industrial) | I4 (same) | I4 (same) | I3 (-1 speed bin) | I3 (-1 speed bin) | C4 (commercial fastest) | C4 (commercial fastest) |
| Temperature Grade | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Industrial (-40C to +100C) | Commercial (0C to +85C) | Commercial (0C to +85C) |
| Ball Finish | Pb-free (RoHS) | Pb-free (RoHS, enhanced) | SnPb eutectic (non-RoHS) | Pb-free (RoHS) | SnPb eutectic (non-RoHS) | Pb-free (RoHS) | Pb-free (RoHS, enhanced) |
| Process Technology | 65 nm CMOS | 65 nm CMOS | 65 nm CMOS | 65 nm CMOS | 65 nm CMOS | 65 nm CMOS | 65 nm CMOS |
Diferenciadores clave
- Industrial temperature grade at the fastest I4 speed bin (frente a EP3SE80F1152C4N)
- RoHS-compliant Pb-free ball finish with identical performance (frente a EP3SE80F1152I4)
- Highest speed grade in Stratix III E family (frente a EP3SE80F1152I3N)
Notas de diseño
The 1152-ball FCBGA package uses flip-chip interconnection and demands a controlled-impedance PCB stackup with microvia (laser-drilled) or via-in-pad technology to fan out the dense ball grid. JEDEC MSL-3 floor-life rules require dry-pack bag storage and pre-bake (typically 125C for 24 hours) before reflow if the humidity indicator card reads above 10% RH. Solder joint inspection should use X-ray (2D or computed tomography) since BGA balls are hidden under the package. Standard 0.8 mm or 1.0 mm pitch BGA fan-out rules apply.
Stratix III E devices use Altera's Programmable Power Technology to reduce dynamic power, but at 80K LEs operating near 450 MHz the device can still dissipate 5-10 W depending on toggle rate. Design a thermal solution with theta-JA no greater than 10 C/W using a heat spreader or heatsink attached to the top of the package, plus thermal vias in the PCB land pattern under the central die flag. Always validate with the Quartus II PowerPlay early power estimator before board layout freeze.
EP3SE80F1152I4N requires multiple supply rails: 1.1 V core (VCC), 1.1 V auxiliary (VCCAUX), 2.5 V or 3.0 V analog supply for PLLs (VCCA_PLL), and per-bank VCCIO rails (1.2 V to 3.3 V depending on I/O standard). Each rail needs local decoupling: 0.1 uF ceramic X7R within 50 mils of every supply pin, plus 10 uF and 100 uF bulk capacitors at the regulator output. Use a sequencer or RC delay to enforce power-up order VCC before VCCAUX before VCCIO to prevent latch-up.
Differential pair routing for LVDS and transceiver channels must maintain 100 ohm differential impedance with matched lengths (skew less than 10 ps for 840 Mbps signals). Keep high-speed transceiver traces on the top microvia layer with a continuous reference ground plane; avoid signal layer changes. JTAG chain (TCK, TMS, TDI, TDO) should be daisy-chained and not stubbed; include a 4.7 kohm pull-up on TCK per IEEE 1149.1 BST recommendations.
Información de cumplimiento
Trailing "N" suffix denotes Pb-free ball finish per JEDEC J-STD-609, satisfying EU RoHS Directive 2011/65/EU. Industrial temperature grade (-40C to +100C) verified against Altera Stratix III Device Handbook. AEC-Q100 not applicable as this is an FPGA IC, not an automotive-grade qualified component. Halogen-free status not stated in the captured web data.
