ESD1P0RFS-H6327 - RF ESD Protection Diode, 1pF, 20kV | Infineon
N.º de pieza: ESD1P0RFS-H6327 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.28 | $28,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.18 | $180,00 |
| 3.000 | $0.15 | $450,00 |
ESD1P0RFS-H6327 Descripción general
An RF ESD protection diode is a specialized transient voltage suppressor (TVS) optimized for high-frequency signal paths, where the parasitic capacitance of a conventional TVS would distort the waveform and degrade return loss. In the broader component taxonomy, it sits beneath TVS diode -> ESD protection device -> circuit protection IC -> discrete semiconductor. Unlike general-purpose Zener-based TVS diodes used on DC power rails, RF ESD diodes target matched-impedance signal lines (USB, HDMI, GPS, LTE/Wi-Fi antennas) where capacitance must remain below a few picofarads to keep insertion loss below 0.5 dB. The 'H6327' suffix denotes Infineon's tape-and-reel packaging code (3,000 pcs/reel).
Key features include a working breakdown voltage of approximately 70 V reverse standoff, low leakage current to preserve battery life in portable designs, and a compact SOT-363 footprint that occupies less than 9 mm² on the PCB, freeing board area for RF front-end components. The 2-channel configuration protects two signal lines simultaneously, which suits differential pairs and dual-antenna MIMO layouts without doubling the footprint. The unidirectional anti-parallel Schottky structure delivers symmetrical clamping on both polarities of the AC-coupled RF signal.
The device integrates Infineon's silicon Schottky process technology, combining low forward voltage with sub-nanosecond response time, ensuring that ESD strikes from human-body or charged-device events are shunted to ground before downstream RF ICs (LNAs, mixers, transceivers) sustain damage. Unlike polymer or varistor-type suppressors, the silicon-based diode offers stable capacitance over voltage and temperature, which simplifies matching network design across the industrial temperature range.
Typical applications include GPS antenna ESD protection, HDMI/DisplayPort interface protection, Wi-Fi/Bluetooth module antenna lines, LTE/5G RF front-end protection, USB 2.0/3.0 data line protection, and Ethernet PHY protection. When designing with this part, place it as close to the external connector as possible (within 3 mm of the ESD entry point) and provide a low-inductance ground return via multiple vias to the ground plane, otherwise residual inductance will raise the clamping voltage during fast transients.
Alternativas directas para ESD1P0RFS-H6327 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con ESD1P0RFS-H6327 (mismo factor de forma y huella) — difiere en Clamping Voltage, EFT Immunity, ESD Contact Discharge, Packaging, Surge Immunity.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
ESD1P0RFSE6327HTSA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
ESD1P0RFW-H6327
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.13 / unidad
Ver hoja de datos →ESD1P0RFS-H6327 Valores máximos y características eléctricas
| Diode Type | Transient Voltage Suppressor (TVS) - RF ESD Protection |
| Configuration | 2-Channel Array, Unidirectional Anti-Parallel |
| Encapsulado | SOT-363 (SC-88), 6-pin |
| Reverse Standoff Voltage (Typ) | 70 V |
| Clamping Voltage | 15 V |
| Peak Pulse Current (8/20 µs) | 10 A |
| Channel Capacitance (Typ) | 1 pF |
| ESD Contact Discharge | ±20 kV (IEC 61000-4-2) |
| EFT Immunity | Per IEC 61000-4-4 |
| Surge Immunity | Per IEC 61000-4-5 (8/20 µs) |
| Number of Diodes | 4 (in 2-channel array) |
| Recuento de pines | 6 |
| Tipo de montaje | Surface Mount |
| Packaging | Tape & Reel (H6327 suffix) |
| Estado RoHS | Compliant |
Configuración de pines de ESD1P0RFS-H6327
| Pin 1 | CH1 — Channel 1 protected line (anode of D1 / cathode of D2 in anti-parallel pair) |
| Pin 2 | GND — Common ground return - must connect to ground plane with low-inductance via |
| Pin 3 | CH2 — Channel 2 protected line (anode of D3 / cathode of D4 in anti-parallel pair) |
| Pin 4 | CH2 — Channel 2 protected line (second terminal of anti-parallel pair) |
| Pin 5 | GND — Common ground return (second pin, redundant for low-inductance grounding) |
| Pin 6 | CH1 — Channel 1 protected line (second terminal of anti-parallel pair) |
Aplicaciones típicas
ESD1P0RFS-H6327 es adecuado para 7 aplicacións: GPS Antenna ESD Protection, HDMI / DisplayPort Interface Protection, Wi-Fi / Bluetooth Module Antenna Lines, USB 2.0 / USB 3.0 Data Line Protection, LTE / 5G RF Front-End Protection, Ethernet PHY ESD Protection (RJ45 Lines), Industrial Sensor Interface Protection.
GPS Antenna ESD Protection
The ESD1P0RFS-H6327 protects GPS L1/L2 antenna inputs from ±20 kV contact discharges on user-handheld devices, where the antenna traces connect directly to the LNA. Its 1 pF typical capacitance preserves the antenna's noise-figure budget (<0.5 dB insertion loss at 1.5 GHz) while the Schottky anti-parallel configuration clamps bidirectional RF transients without distortion. Placed within 3 mm of the u.FL/MHF connector, it grounds ESD via multiple stitching vias. Versus a higher-capacitance TVS that would shift the antenna resonant frequency, this part maintains matching on the 50 Ω feedline critical for GPS positioning accuracy.
Recomendado
HDMI / DisplayPort Interface Protection
The ESD1P0RFS-H6327 guards high-speed HDMI 2.0 (6 Gbps) and DisplayPort 1.4 lanes by clamping ESD events before they reach the interface transceiver. Its sub-picofarad loading (1 pF typical) is critical for TMDS signaling, where excess capacitance degrades eye-diagram margin at 3 Gbps per lane. The 2-channel array in SOT-363 protects both data and clock lines from a single IC, saving PCB area compared to discrete single-channel clamps. Versus varistor-based alternatives, the silicon Schottky die provides consistent clamping voltage across the -40 to +85 °C industrial range required for monitor and projector designs.
Recomendado
Wi-Fi / Bluetooth Module Antenna Lines
For 2.4 GHz Wi-Fi, 5 GHz Wi-Fi 6, and Bluetooth module antenna ports, the ESD1P0RFS-H6327 delivers the ultra-low capacitance demanded by IEEE 802.11ax 160 MHz channels. Its 1 pF channel capacitance is far below the 4 pF threshold where S-parameter return loss degrades by more than 0.5 dB at 5 GHz. The unidirectional anti-parallel Schottky topology clamps both positive and negative ESD strikes without forward-biasing the RF signal in normal operation. Mounted at the antenna feed point on the module, it protects the integrated PA/LNA/switch SoC from field-induced ESD during product handling and end-user use cases.
Recomendado
USB 2.0 / USB 3.0 Data Line Protection
The ESD1P0RFS-H6327 protects USB 2.0 (480 Mbps) and USB 3.0 (5 Gbps) data lines from cable-discharge and human-body ESD events that occur during hot-plug operations. With 1 pF typical capacitance, it adds less than 0.2 dB insertion loss at the 1.25 GHz fundamental of USB 3.0, preserving the eye-diagram mask margin required for SuperSpeed certification. The 15 V clamping voltage safely handles 5 V VBUS transients while remaining well below the transceiver absolute-maximum ratings. A typical design places this TVS right at the USB Type-C connector pins with a short ground stub and 0402 capacitors for additional high-frequency bypass.
Recomendado
LTE / 5G RF Front-End Protection
In LTE and sub-6 GHz 5G handset front-ends, the ESD1P0RFS-H6327 protects the duplexer, RF switch, and tuner ICs from ESD strikes that propagate down the antenna feed. Its 10 A peak pulse current (8/20 µs) handles indirect lightning-induced surges that couple onto the antenna from nearby discharges. The 70 V reverse standoff allows the device to tolerate the high RF swing on transmit paths without compression. Unlike polymer ESD suppressors that degrade after multiple strikes, the silicon Schottky die maintains clamping performance over the full product lifetime, critical for mobile devices expected to survive 8 kV contact-discharge IEC testing.
Recomendado
Ethernet PHY ESD Protection (RJ45 Lines)
The ESD1P0RFS-H6327 is well-suited for 10/100/1000 Ethernet transformer-secondary protection, where the 1000BASE-T PHY operates on MDI differential pairs requiring <2 pF loading to maintain the return-loss mask. Its 2-channel array protects one differential pair from a single IC, simplifying PCB routing on the magnetics-secondary side. The diode's 15 V clamp protects against cable-discharge ESD events that occur during installation in PoE and industrial Ethernet links. Compared to discrete zener arrays that introduce tens of picofarads, this part adds negligible loading while meeting IEC 61000-4-2 ±20 kV contact-discharge immunity on the RJ45 connector.
Recomendado
Industrial Sensor Interface Protection
For industrial 4-20 mA loops, RS-485 ports, and sensor signal lines exposed to harsh factory environments, the ESD1P0RFS-H6327 provides robust ESD/EFT/surge immunity per IEC 61000-4-2/-4/-5. Its 70 V reverse standoff safely tolerates 24 V industrial transients, while the 1 pF capacitance is well below the bandwidth limit for sensors operating at <10 MHz. The compact SOT-363 package fits inside cable-termination enclosures and sensor heads. Compared to optocoupler-based isolation solutions, the TVS approach protects at lower cost and complexity while still meeting the EMI/EMC immunity requirements of IEC 61850 and IEC 61131-2.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para ESD1P0RFS-H6327 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | ESD1P0RFSE6327HTSA1 | ESD1P0RFW-H6327 |
|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SOT-363 (SC-88), 6-pin | SOT-363 (SC-88) - same | SOT-363 (SC-88) family (1-ch variant) |
| Channels | 2 (unidirectional anti-parallel) | 2 (unidirectional anti-parallel) | 1 |
| Channel Capacitance (Typ) | 1 pF | 1 pF | 1 pF |
| ESD Contact Discharge (IEC 61000-4-2) | ±20 kV | ±20 kV | ±20 kV |
| Peak Pulse Current (8/20 µs) | 10 A | 10 A | 10 A |
| Reverse Standoff Voltage (Typ) | 70 V | 70 V | 70 V |
| Clamping Voltage | 15 V | 15 V | 15 V |
| RoHS Compliance | Yes | Yes | Yes |
Diferenciadores clave
- Matched 50 Ω insertion loss profile for sub-6 GHz RF (frente a ESD1P0RFSE6327HTSA1)
- 2 channels per IC saves PCB area vs single-channel alternatives (frente a ESD1P0RFW-H6327)
- Silicon Schottky process with stable capacitance vs polymer suppressors (frente a Polymer ESD suppressors (e.g., PESD series))
Notas de diseño
Place the ESD1P0RFS-H6327 within 3 mm of the external connector pin and provide a low-inductance ground return using a minimum of two ground vias directly beneath pins 2 and 5 (the device GND pins). Keep the trace from the connector to the TVS as short and as straight as possible to minimize parasitic inductance, which can otherwise raise the effective clamping voltage during sub-nanosecond ESD events. Per the Infineon RF ESD Protection datasheet, residual lead inductance above 1 nH will degrade clamping performance significantly. Maintain a continuous ground plane under the protected signal traces and avoid routing any digital signals over the GND return path.
Do not place decoupling capacitors or other components between the connector and the ESD1P0RFS-H6327, as this introduces stub parasitic inductance that allows the ESD strike to develop a higher voltage before reaching the clamp. Do not use this part on DC power rails above 15 V because the 15 V clamping voltage may interfere with normal signal levels and the 70 V reverse standoff is insufficient for higher-voltage rails. For 5 V USB VBUS or lower-rail protection, use a dedicated rail-clamp TVS such as the Infineon ESD5V0S1B family instead.
The 1 pF channel capacitance of the ESD1P0RFS-H6327 contributes approximately 0.05 dB insertion loss at 1 GHz and 0.25 dB at 6 GHz on a 50 Ω line, per the Infineon datasheet S-parameters. For multi-gigabit protocols (USB 3.0/3.1, HDMI 2.0), include the part's parasitic model in channel simulation to verify the eye-diagram mask margin. The anti-parallel Schottky configuration maintains symmetrical loading on AC-coupled lines (which present 0 V DC), so DC bias does not shift the capacitance value significantly across the typical operating range.
Información de cumplimiento
RoHS and REACH compliant per Infineon product environmental documentation. Halogen-free status not explicitly confirmed in verified web data; set to 'unknown'. Not AEC-Q100 qualified - this is a commercial/industrial part; consult Infineon for automotive-grade Q-qualified TVS variants in this series.
