FDG6332C-F085 - 20V N&P Chan MOSFET Array | onsemi | SC-70-6
N.º de pieza: FDG6332C-F085 ⚠ Última compra| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.48 | $0,48 |
| 10 | $0.42 | $4,20 |
| 100 | $0.3 | $30,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.17 | $170,00 |
FDG6332C-F085 Descripción general
A PowerTrench MOSFET is a small-signal MOSFET fabricated with a trench-gate process that increases cell density and reduces on-state resistance (RDS(on)) per unit silicon area. In a complementary N+P pair such as the FDG6332C-F085, designers use the N-channel device for high-side or low-side switching of positive rails and the P-channel device for high-side reverse-polarity or load-disconnect switching of the same rail - functions that together cover virtually every discrete switching need in a portable battery-powered system. MOSFET arrays are classified under small-signal discrets, a sub-family of discrete semiconductors that also includes single MOSFETs, IGBTs, and protection devices.
Key features of the FDG6332C-F085 include a 20V VDS rating that comfortably covers 1-cell Li-ion (4.2V max), 3.3V and 5V rails, and 12V bus transients; low RDS(on) values typical for the PowerTrench family at VGS = 4.5V and 2.5V; fast switching speeds thanks to low gate charge; and a 300 mW power dissipation rating in the SC-70-6 package. The -F085 suffix denotes the automotive AEC-Q100 qualified grade, screened for higher reliability than the standard commercial FDG6332C.
Internally, both FETs share a common drain-substrate layout that allows the package to fit two independent devices in a 2.0 x 1.25 mm body. The P-channel transistor typically has higher RDS(on) than the N-channel at the same VGS - this asymmetry is normal and is one of the reasons complementary pairs are co-designed. Designers selecting this part should bias the gates with logic-level (1.8V/2.5V/3.3V) drive signals rather than higher voltages to stay within the VGS(max) envelope and to minimize conduction losses.
Typical applications include portable/battery-powered load switching, USB power switching, Li-ion charger reverse-polarity protection, signal gating, motor-driver direction control, and small-signal DC-DC converters. The AEC-Q100 qualification also makes the -F085 grade suitable for automotive body-electronics modules, infotainment peripherals, and other in-cabin circuits that demand automotive-grade reliability.
When designing with this array, keep gate-drive traces short to limit ringing, and place gate-source pull-down resistors (typically 100 kohm to 1 Mohm) on both FETs to ensure a known off-state when the controller is in reset. The SC-70-6 footprint requires careful paste-stencil aperture design to avoid solder bridging on the closely spaced leads - a 4-mil stencil with aperture reduction on inner pads is a common best practice.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the onsemi datasheet alone, giving you the parametric data needed to choose the FDG6332C-F085 for portable, automotive, or industrial switching tasks.
Alternativas directas para FDG6332C-F085 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con FDG6332C-F085 (mismo factor de forma y huella) — difiere en Configuration, Manufacturer, Operating Temperature Range, Package.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
FDG6332C
✅ Sustitución directa✓ En stock
$0.14 / unidad
Ver hoja de datos →FDG6322C
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FDG6301N
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMG2305UX-7
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMG3415U-7
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FDG6332C-F085 Valores máximos y características eléctricas
| Manufacturer | onsemi |
| Series | PowerTrench |
| FET Type | N- and P-Channel Complementary Array |
| Drain-to-Source Voltage (VDS) | 20 V |
| Continuous Drain Current - N-FET (ID) | 700 mA |
| Continuous Drain Current - P-FET (ID) | 600 mA |
| Power Dissipation (PD) | 300 mW |
| Encapsulado | SC-88 / SC-70-6 (SOT-363) |
| Tipo de montaje | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) |
| Automotive Qualification | AEC-Q101 / -F085 grade |
| Technology | PowerTrench (trench-gate) |
| Configuration | Dual independent FETs (N+P) |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de FDG6332C-F085
| Pin 1 | S1 — N-Channel FET Source 1 |
| Pin 2 | G1 — N-Channel FET Gate 1 |
| Pin 3 | D2 — Drain 2 (shared with P-FET drain) |
| Pin 4 | D2 — Drain 2 (P-Channel FET Drain 2) |
| Pin 5 | G2 — P-Channel FET Gate 2 |
| Pin 6 | S2 — P-Channel FET Source 2 |
Aplicaciones típicas
FDG6332C-F085 es adecuado para 6 aplicacións: Portable/Battery Load Switching, USB VBUS Power Switching, Li-ion Reverse-Polarity Protection, Automotive Body Electronics, Small-Signal DC-DC Converter, Signal Gating and Multiplexing.
Portable/Battery Load Switching
The FDG6332C-F085 is well suited for portable/battery load switching because its 20V VDS rating covers 1-cell Li-ion (4.2V max) plus transient headroom, while the SC-70-6 footprint preserves board area in compact wearables and handheld devices. The P-channel FET (600 mA) handles high-side load disconnect directly from the battery rail without a charge pump, and the N-channel FET (700 mA) handles low-side switching of subsystems. The PowerTrench process gives low RDS(on) at 2.5V VGS, so logic-level GPIO from a microcontroller can drive the gates directly. Compared with a single-FET solution, the complementary array halves the discrete count for designs that need both high-side and low-side switching. Pair the part with a 100 kohm gate-source pull-down resistor to hold a known off-state during MCU reset.
Recomendado
USB VBUS Power Switching
The FDG6332C-F085 is a strong fit for USB VBUS power switching because the integrated P-channel FET provides high-side switching up to 600 mA, which covers USB 2.0 (500 mA) and most USB charging ports at 5V. The 20V VDS rating is well above 5V VBUS with margin for hot-plug transients, and the low RDS(on) at VGS = 4.5V keeps conduction loss under 100 mW at full load. The AEC-Q101 screening of the -F085 grade supports automotive USB hub and infotainment ports where automotive-grade parts are mandated. Place the P-FET source at VBUS and drain at the load, drive the gate with a logic-level GPIO, and add a USBLC6-2SC6 TVS on VBUS for combined ESD and over-voltage protection. The N-FET on the same die can switch the USB data-line power or an LED indicator.
Recomendado
Li-ion Reverse-Polarity Protection
The FDG6332C-F085 supports Li-ion reverse-polarity protection because the P-channel FET can block reverse battery insertion when wired source-to-pack and drain-to-load. A single P-FET in this orientation conducts during normal polarity and blocks during reversed polarity, eliminating the diode forward drop of a Schottky solution and improving efficiency by 100-300 mV. The 20V VDS rating handles the full 4.2V Li-ion charge voltage plus inductive transients. The integrated N-FET can be used to drive an indicator LED, gate an enable signal to a downstream charger IC, or switch a low-side load. The AEC-Q101 grade of the -F085 part is appropriate for e-bike, scooter, and automotive 12V accessory battery systems. Use a 100 kohm gate-source pull-down for fail-safe off.
Recomendado
Automotive Body Electronics
The FDG6332C-F085 is qualified for automotive body-electronics modules thanks to the AEC-Q101 -F085 screening tier. It fits interior lighting drivers, mirror-adjust switch matrices, and seat-heater control blocks where small-signal MOSFETs switch low-current loads from body control modules. The 20V rating covers 12V automotive bus transients up to Load Dump class A when paired with an external TVS such as SMAJ16A, and the SC-70-6 footprint keeps PCB area low. The N-channel FET can drive a low-side relay coil, while the P-channel FET can perform high-side switching of an LED string. onsemi automotive-grade -F085 parts ship with PPAP documentation and full traceability, which automotive Tier-1 suppliers require for production.
Recomendado
Small-Signal DC-DC Converter
The FDG6332C-F085 can be used in small-signal DC-DC converter building blocks such as a synchronous-rectifier pair in a buck converter, or as the switching FETs in a charge-pump. The N+P complementary pair simplifies synchronous rectification on the low-side (N-FET) and high-side (P-FET) without needing a bootstrap circuit for the high-side N-FET, which simplifies gate drive. The 20V VDS comfortably covers 5V and 12V rails, and PowerTrench technology gives low gate charge (Qg) so switching losses stay low at 100-500 kHz. The SC-70-6 footprint fits point-of-load regulators on densely populated boards. The P-FET's higher RDS(on) is acceptable in low-current auxiliary rails where efficiency loss is minor.
Recomendado
Signal Gating and Multiplexing
The FDG6332C-F085 works well for signal gating and multiplexing of low-voltage analog or digital signals because both FETs can pass small signals in either direction when on. The N-channel and P-channel pair can be used as a transmission gate (analog switch) when driven by complementary gate signals from a logic inverter or an analog switch controller. This is useful for test-mux paths, audio signal switching, and reset-signal routing where mechanical relays are too large or slow. The 20V rating supports signal levels up to +/-20V, and the low RDS(on) introduces small insertion loss. The SC-70-6 footprint allows the gate to be placed next to sensitive analog circuitry without injecting significant parasitic capacitance.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para FDG6332C-F085 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | FDG6332C | FDG6322C | FDG6301N | DMG2305UX-7 | DMG3415U-7 |
|---|---|---|---|---|---|---|
| Package | SC-88 / SC-70-6 (SOT-363) | SC-88 / SC-70-6 (SOT-363) - same | SC-88 / SC-70-6 (SOT-363) - same | SC-88 / SC-70-6 (SOT-363) - same | SC-88 / SC-70-6 (SOT-363) - same | SC-88 / SC-70-6 (SOT-363) - same |
| Brand | onsemi | onsemi | onsemi | onsemi | Diodes Incorporated | Diodes Incorporated |
| FET Type | N-Channel + P-Channel complementary | N+P complementary (same die) | N+P complementary | Dual N-channel | N+P complementary | N+P complementary |
| VDS Max | 20 V | 20 V | 20 V | 25 V | 20 V | 20 V |
| Power Dissipation | 300 mW | 300 mW | 300 mW | 300 mW | 300 mW (typical SC-70-6) | 300 mW (typical SC-70-6) |
| Automotive Grade | Yes (-F085, AEC-Q101) | No (commercial) | No (commercial) | No | Automotive variant exists | Automotive variant exists |
Diferenciadores clave
- AEC-Q101 automotive qualified (-F085) (frente a FDG6332C (non-automotive))
- Complementary N+P pair in a single SC-70-6 package (frente a FDG6301N (dual N-only))
- PowerTrench low RDS(on) at logic-level VGS (frente a FDG6322C (older generation))
Notas de diseño
Keep gate-drive traces short (under 10 mm) on the FDG6332C-F085 to limit ringing. Add a 100 kohm gate-source pull-down resistor on both FETs to hold a known off-state during MCU reset and to prevent accidental turn-on from leakage. Place input and output bypass capacitors adjacent to the drain and source pads to minimize parasitic inductance.
Estimated: at VDS=20V and ID=700mA (N-FET) the SC-7040A SC-70-6 package dissipates up to 14W peak - well above the 300mW continuous rating - so the FET must be switched, not linear. For switching applications, average power is RDS(on)=ID^2=D which stays well below 300mW for ID under 500mA in the SC-70-6 with adequate copper. Above 500mA continuous, consider derating to 50% or migrating to a larger package.
Do not exceed the VGS(max) rating of +/-8V on the FDG6332C-F085 gates; driving from 5V logic is safe but a 12V gate drive will damage the oxide. When using the P-FET for high-side switching, ensure the source is tied to the supply rail and the drain to the load, with the gate pulled LOW to turn on. Reversing source and drain on a P-FET in load-switch applications creates body-diode conduction only and prevents the FET from turning on. Confirm the -F085 grade is required for AEC-Q101 documentation in automotive builds.
Use a 4-mil stencil with aperture reduction on inner pads for SC-70-6 footprints to prevent solder bridging. Place a continuous ground plane under the package to spread heat and provide low-impedance return paths. For high-current (>400mA) N-FET switching, route the drain and source pads to wide copper pours (at least 20 mil) to limit resistive losses and thermal rise.
Información de cumplimiento
AEC-Q101 (automotive) qualified via -F085 suffix; RoHS and lead-free confirmed from onsemi product page and DigiKey listing. Halogen-free status not explicitly stated in the verified web data.
