FDS6670A - 30V 13A N-Channel PowerTrench MOSFET | onsemi
N.º de pieza: FDS6670A ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.55 | $5,50 |
| 100 | $0.48 | $48,00 |
| 500 | $0.42 | $210,00 |
| 1.000 | $0.36 | $360,00 |
FDS6670A Descripción general
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which current flows between drain and source terminals when a positive gate voltage is applied relative to the source. Within the power-management hierarchy, MOSFETs sit alongside IGBTs and relays as the primary switching elements of power converters, load switches, and motor-drive bridges, and small-signal MOSFETs such as the FDS6670A occupy the sub-30V, mid-current segment of that taxonomy.
The defining feature of the FDS6670A is Fairchild (now onsemi) advanced PowerTrench process technology, which uses a trench-gate cell structure optimized to minimize on-state resistance while maintaining superior switching performance. Logic-level gate drive means the device turns on fully with a standard 4.5 V gate signal, allowing direct interface with 5 V microcontrollers and battery-management controllers without a dedicated gate-driver supply.
Electrically, the combination of low Rds(on), 30 V blocking capability, and the thermally efficient SO-8 body-drain construction makes this device suited to fast-switching topologies where conduction and switching losses both matter. The source pins are bonded to the die with low-inductance wiring that preserves gate-loop integrity at high switching frequencies.
Typical applications include low-voltage battery-powered systems, DC-DC converter primary and secondary switches, load switches in portable equipment, and motor-control half-bridges operating from 5-cell to 7-cell battery packs.
Designers should provide a substantial PCB copper pour under the drain-connected pins, because the SO-8 package relies on board copper for heat extraction; thermal design margins at 2.5 W dissipation are tight at elevated ambient temperatures.
This page adds distributor-sourced availability data, drop-in alternatives, and practical SO-8 thermal layout notes that are not consolidated in the manufacturer datasheet.
Alternativas directas para FDS6670A — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
FDS6670AS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FDS8870
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FDS6679A
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
FDS6670B
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
VBA1307
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FDS6670A Valores máximos y características eléctricas
| Polarity | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) | 13 A at Ta = 25 C |
| Power Dissipation (Pd) | 2.5 W at Ta = 25 C |
| Technology | PowerTrench trench-gate process |
| Gate Drive Type | Logic Level |
| Encapsulado | 8-SOIC (SO-8), Surface Mount |
| Tipo de montaje | Surface Mount |
| Configuration | Single MOSFET |
Configuración de pines de FDS6670A
| Pin 1 | Source — Source terminal (bonded with pins 2 and 3) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate control terminal |
| Pin 5 | Drain — Drain terminal (bonded with pins 6-8 and die bottom) |
| Pin 6 | Drain — Drain terminal |
| Pin 7 | Drain — Drain terminal |
| Pin 8 | Drain — Drain terminal |
Área de funcionamiento seguro
Aplicaciones típicas
FDS6670A es adecuado para 6 aplicacións: Battery-Powered Portable Equipment, Low-Voltage DC-DC Converters, DC Motor Control and H-Bridges, Load Switches and Hot-Swap Front Ends, Power Management in Networking Equipment, Automotive and Industrial Low-Voltage Auxiliary Rails.
Battery-Powered Portable Equipment
The FDS6670A fits battery-powered designs because its logic-level gate drive turns the switch fully on from a 5 V or battery-backed rail without a separate gate-driver supply, and its PowerTrench trench construction minimizes in-line conduction loss, directly extending runtime. Typical use is as a load switch or protection FET in the positive rail of 3S-6S battery packs up to the 30 V rating. Placed in series with the load with the gate driven by an MCU GPIO through a small series resistor, the device adds negligible voltage drop because Rds(on) is in the low-milliohm range characteristic of PowerTrench dies. The 13 A (Ta) rating supports motors, heaters, and high-current USB or barrel-jack loads; the main design consideration is PCB copper area under the SO-8 drain pins, since the package dissipation ceiling is 2.5 W.
Recomendado
Low-Voltage DC-DC Converters
In buck and boost converters operating from 12 V-class rails, the FDS6670A serves as the main switching FET where its 30 V rating covers 12 V input with wide transient margin. The PowerTrench process was specifically tuned, per the onsemi product page, to minimize on-state resistance while maintaining superior switching performance - exactly the combination a hard-switched buck converter needs, since total loss is Id-squared times Rds(on) plus Qg-driven transition loss. The logic-level threshold allows direct drive from common PWM controllers with 5 V gate output, avoiding a bootstrap driver supply in low-side positions. The SOIC-8 inductance profile supports switching frequencies of a few hundred kilohertz; keep the gate loop short and place the input ceramic capacitor within a few millimeters of the drain pins to limit voltage overshoot during turn-off transitions.
Recomendado
DC Motor Control and H-Bridges
For small DC motors, fans, and pumps running from 12 V or multi-cell batteries, the FDS6670A works as a low-side PWM switch or as one leg of an H-bridge. Its 13 A (Ta) continuous rating handles typical run currents of fractional-horsepower motors, and the low Rds(on) of the PowerTrench die keeps stall-event energy manageable when paired with current limiting. PWM drive from a microcontroller or gate driver at 5 V exploits the logic-level gate; switching losses stay low at the 20-30 kHz frequencies typically chosen for audible-noise avoidance. The SOIC-8 drain pins should sit on a poured thermal island; motor stalls can hold current near the rating for seconds, so verify junction temperature under stalled-rotor conditions against the 2.5 W Ta dissipation ceiling, or fold back PWM duty cycle on overcurrent detection.
Recomendado
Load Switches and Hot-Swap Front Ends
As a series load switch, the FDS6670A combines fast gate switching with very low conduction drop, making it appropriate for hot-swap-style front ends on 12 V boards. Its logic-level drive permits control from a supervisor or enable rail without a charge pump. On insertion, inrush current is shaped by ramping the gate with an RC network on pin 4 - the SOIC-8 pinout with dedicated gate access makes this layout trivial. Because conduction loss is Id-squared times Rds(on) with low milliohm values typical of PowerTrench parts, even 10 A continuous loads keep dissipation well within the 2.5 W (Ta) package rating. The primary engineering caution is the 30 V absolute maximum: for inductive cable drops and hot-unplug transients, add a TVS diode across drain-source to clamp overshoot below the rating.
Recomendado
Power Management in Networking Equipment
Networking line cards, PoE secondary-side circuits, and 12 V shelf power distribution use FDS6670A-class MOSFETs as ORing switches, primary buck switches, and fan-power switches. The device's fast switching characteristic - explicitly called out in the onsemi description as superior switching performance - reduces transition losses in the several-hundred-kilohertz converters common in telecom power trees. The 30 V rating accommodates 12 V rails with hold-up transients, and the logic-level gate integrates with hot-swap controllers that drive low-side N-FETs from 5 V rails. Distributed 13 A currents across a backplane section remain feasible given adequate copper; thermal design with the SOIC-8 package should target a large top-layer pour plus stitching vias to inner planes, since the 2.5 W (Ta) rating presumes effective board-level heat spreading.
Recomendado
Automotive and Industrial Low-Voltage Auxiliary Rails
Industrial 12 V and 24 V auxiliary supplies, solenoid drivers, and relay replacements use the FDS6670A where its 30 V blocking voltage and 13 A handling cover the load range of actuators and lamps. The logic-level gate drive suits industrial PLC I/O boards driven from 5 V logic, and the SOIC-8 footprint supports dense multi-channel driver boards with one FET per output. For 24 V industrial rails, note that unclamped inductive kick from solenoids can exceed 30 V easily - use the device in clamped, snubbed, or actively recirculated topologies, or select a higher-voltage FET for raw 24 V inductive loads. Because the retrieved data does not confirm AEC-Q100 qualification, this part is best positioned for industrial-grade rather than automotive-grade builds unless qualification is verified with onsemi.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para FDS6670A — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | FDS6670AS | FDS8870 | FDS6679A | FDS6670B | VBA1307 |
|---|---|---|---|---|---|---|
| Package | SOIC-8 (SO-8) | SOIC-8 (SO-8) - same | SOIC-8 (SO-8) - same | SOIC-8 (SO-8) - same | SOIC-8 (SO-8) - same | SOIC-8 (SO-8) - same |
| Brand | onsemi | onsemi | onsemi | onsemi | onsemi | VBsemi (Will Semiconductor) |
| Drain-Source Voltage | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Gate Drive | Logic Level | Logic Level | Logic Level | Logic Level | Logic Level | Logic Level |
| Technology | PowerTrench | PowerTrench | PowerTrench | PowerTrench | PowerTrench | Trench MOSFET |
Diferenciadores clave
- Logic-level gate drive with trench efficiency (frente a FDS8870)
- Higher verified current headroom option exists in-family (frente a FDS6670AS)
- Second-source availability from a domestic vendor (frente a VBA1307)
Notas de diseño
The SOIC-8 package relies on the PCB, not the package, for heat extraction. At the 2.5 W (Ta) dissipation rating, junction-to-ambient performance is dominated by the copper area under drain pins 5-8. Provide at least 1 square inch of 2 oz copper on the top layer, plus thermal vias to a ground or power plane. Estimated: at 10 A with a typical PowerTrench Rds(on) of ~11.5 mOhm, conduction loss is roughly 10^2 x 0.0115 = 1.15 W - confirm the exact Rds(on) from the datasheet and verify junction temperature at your maximum ambient with the board-level theta-JA, not the datasheet free-air figure.
Keep the gate loop as short as possible: place the gate driver or series gate resistor within millimeters of pin 4, and route the gate trace away from the drain-switching node to avoid Miller-induced false turn-on. Place the input decoupling capacitor (10 uF ceramic plus 0.1 uF HF bypass) directly across drain pins 5-8 and the nearest source pin, since SOIC-8 lead inductance (~1-2 nH per lead) will otherwise ring during fast turn-off transitions in hard-switched converters.
Do not exceed the 30 V Vdss absolute maximum: 12 V automotive/industrial rails with load-dump or inductive kick routinely exceed this, so add a TVS clamp for inductive loads. Second, the 13 A rating is specified at 25 C ambient - derate substantially at elevated ambient or in sealed enclosures. Third, when driving from 3.3 V logic, verify Rds(on) at the reduced Vgs from the datasheet transfer characteristics; logic-level specification does not guarantee full enhancement below 4.5 V.
Información de cumplimiento
RoHS/REACH status was not stated in the retrieved distributor summaries. Confirm on the onsemi product page or material-declaration documents. No AEC-Q100 claim found in the provided data.
