IPN70R600P7SATMA1 - 700V 600mΩ CoolMOS P7 N-MOSFET | Infineon
N.º de pieza: IPN70R600P7SATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.28 | $1,28 |
| 10 | $1.05 | $10,50 |
| 100 | $0.83 | $83,00 |
| 500 | $0.69 | $345,00 |
| 1.000 | $0.58 | $580,00 |
| 3.000 | $0.49 | $1.470,00 |
IPN70R600P7SATMA1 Descripción general
A CoolMOS power MOSFET is a high-voltage N-channel enhancement-mode transistor built using a Superjunction (SJ) structure that places alternating N- and P-doped pillars inside the drift region. This pillar arrangement breaks the classical silicon limit on Rds(on) × area, so a CoolMOS device achieves far lower on-resistance per die area than a conventional planar MOSFET of the same voltage class. CoolMOS P7 is the 700V/800V consumer-optimized generation tuned for high efficiency, easy design-in and low EMI in switched-mode power supplies.
Key features include a 700V drain-source breakdown voltage, 600mΩ maximum Rds(on) at Vgs=10V, an integrated Zener-protected gate for ESD robustness, and a low gate charge that supports high-frequency switching. The technology meets the highest efficiency standards (for example 80 PLUS requirements in ATX/PC silver-box designs) and supports high power density, enabling customers to design very slim form-factor adapters, chargers and open-frame SMPS units.
Typical applications include flyback and quasi-resonant flyback converters in smartphone chargers, laptop adapters, TV standby and auxiliary power supplies, LED lighting drivers, and industrial auxiliary SMPS. The PG-SOT223 footprint is footprint-compatible with industry-standard SOT-223 N-channel MOSFETs, simplifying both new designs and retrofit replacements on existing 700V switcher boards.
When designing with this device, observe the 700V BVdss rating with adequate derating for repetitive avalanche from the transformer's leakage inductance, and respect the PG-SOT223 RθJA thermal budget of approximately 156 C/W on the standard JEDEC 1s0p test board. Drive the gate with a 10V Vgs to reach the published 600mΩ Rds(on) curve, and use a small external gate-source resistor if paralleled-device gate ringing is a concern.
Alternativas directas para IPN70R600P7SATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPN70R600P7SATMA1 (mismo factor de forma y huella) — difiere en Operating Temperature Range, Package, Technology, MSL Level.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IPN70R360P7SATMA1
✅ Sustitución directa✓ En stock
$0.58 / unidad
Ver hoja de datos →IPD80R600P7ATMA1
✅ Sustitución directa✓ En stock
$0.92 / unidad
Ver hoja de datos →IPN70R600P7SATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Technology | Superjunction (CoolMOS) N-Channel MOSFET |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (Vdss) | 700 V |
| Continuous Drain Current (Id) @ Tc | 8.5 A |
| On-State Resistance Rds(on) max @ Vgs=10V | 600 mΩ |
| Power Dissipation (Pd) @ Tc | 6.9 W |
| Rango de temperatura de funcionamiento | -55°C to +150°C (Tj) |
| Encapsulado | PG-SOT223 (3-pin + tab), surface mount |
| Tipo de montaje | Surface Mount |
| Pin Configuration | Pin 1 Gate, Pin 2 Drain, Pin 3 Source, Tab Drain |
| RoHS Compliance | Compliant |
| Nivel MSL | Level 1 (per JEDEC J-STD-020) |
| Family Position | 700V CoolMOS P7, 600mΩ class |
Configuración de pines de IPN70R600P7SATMA1
| Pin 1 | Gate (G) — MOSFET gate drive input; Zener-protected against ESD |
| Pin 2 | Drain (D) — MOSFET drain (also tied to tab); connected to flyback transformer primary return |
| Pin 3 | Source (S) — MOSFET source; returns gate-drive signal and connects to sense resistor |
| Pin 4 (Tab) | Drain (D) — MOSFET drain tab; thermal pad for PCB heatsinking, electrically tied to Pin 2 |
Área de funcionamiento seguro (PG-SOT223, Tj limited)
Aplicaciones típicas
IPN70R600P7SATMA1 es adecuado para 6 aplicacións: Smartphone / Tablet USB-C Charger (18-25W), LED Lighting Driver SMPS (12-30W), TV Standby / Auxiliary Power Supply, Industrial Auxiliary SMPS (24V / 36V Bus), White-Good Appliance Auxiliary Power, Universal-Input Flyback Adapter (12-15W).
Smartphone / Tablet USB-C Charger (18-25W)
The IPN70R600P7SATMA1 fits 18-25W USB-PD charger designs because its 700V Vdss and 600mΩ Rds(on) deliver QR-flyback efficiency above 87% at 230VAC full load. Its PG-SOT223 footprint is smaller than TO-252 alternatives, enabling adapter depths below 18mm and total BOM cost savings versus higher-Rds(on) 800V CoolMOS. Pair it with an Infineon ICE2QR0680Z or CoolSET-QR controller for a production-ready 24W design.
Recomendado
LED Lighting Driver SMPS (12-30W)
In 12-30W constant-current LED drivers the IPN70R600P7SATMA1 acts as the main flyback switch, with 700V Vdss supporting universal 90-305VAC input and 600mΩ Rds(on) keeping conduction loss under 4% of throughput. The PG-SOT223 footprint allows slimmer linear-light-fixture enclosures, and the integrated Zener-protected gate tolerates long LED-driver PCB traces without additional gate-source protection.
Recomendado
TV Standby / Auxiliary Power Supply
The IPN70R600P7SATMA1 suits TV standby and auxiliary 5V/12V rails because its CoolMOS P7 silicon delivers the high efficiency required for ENERGY STAR and 80 PLUS standby targets. The 700V Vdss handles rectified 230VAC with margin, the 600mΩ Rds(on) keeps no-load standby below 75mW in DCM, and the PG-SOT223 surface-mount package enables automated SMT assembly in mass-market TV motherboards.
Recomendado
Industrial Auxiliary SMPS (24V / 36V Bus)
In 24V/36V industrial auxiliary SMPS modules, the IPN70R600P7SATMA1 acts as the primary-side flyback switch with 700V Vdss providing ample avalanche margin for industrial input transients. Its 600mΩ Rds(on) and PG-SOT223 footprint suit low-profile DIN-rail modules; the Zener-protected gate eases IEC 61000-4-2 ESD compliance on factory-floor connectors, while CoolMOS P7 efficiency keeps thermals manageable in sealed enclosures.
Recomendado
White-Good Appliance Auxiliary Power
For washing machines, dishwashers and refrigerators, the IPN70R600P7SATMA1 powers the auxiliary 5V/12V standby rails that feed the appliance's MCU and Wi-Fi/Bluetooth module. Its 700V Vdss handles rectified mains with surge margin, the 600mΩ Rds(on) keeps standby loss below IEC 62301 limits, and the PG-SOT223 footprint supports automated through-hole-replacement wave-solder or SMT assembly for high-volume white-good lines.
Recomendado
Universal-Input Flyback Adapter (12-15W)
In 12-15W universal-input flyback adapters (e.g. set-top-box, router, IoT-gateway wall warts), the IPN70R600P7SATMA1 provides the best Rds(on)-per-dollar of the 700V CoolMOS P7 family. The 600mΩ Rds(on) at Vgs=10V keeps full-load efficiency above 85%, the PG-SOT223 footprint is pin-compatible with industry SOT-223 N-FET land patterns, and the Zener-protected gate tolerates cheap third-party controller ICs without external gate protection.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPN70R600P7SATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPN70R360P7SATMA1 | IPD80R600P7ATMA1 |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-SOT223 (SMD) | PG-SOT223 (SMD) - same | TO-252 / DPAK (SMD, footprint-compatible) |
| Series | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 |
| Drain-Source Voltage Vdss | 700 V | 700 V | 800 V |
| Rds(on) max @ Vgs=10V | 600 mΩ | 360 mΩ (-40%) | 600 mΩ (identical) |
| Integrated Gate Zener Protection | Yes | Yes | Yes |
| Target Application Class | 12-25W flyback adapter | 20-45W flyback adapter | 15-30W wide-Vin flyback |
Diferenciadores clave
- Lower conduction loss at 25W output than the 600mΩ-class (frente a IPN70R360P7SATMA1)
- Higher Vdss margin for 305VAC industrial inputs (frente a IPD80R600P7ATMA1)
- CoolMOS P7 generation ease-of-use features (frente a Earlier 600V/650V CoolMOS (P6, CFD2) generations)
Notas de diseño
Estimated: The PG-SOT223 RθJA on the standard JEDEC 1s0p test board is approximately 156 C/W; on a 1-square-inch copper pour it drops to about 60 C/W. For an adapter dissipating 1.5W total at the MOSFET, the 1s0p board keeps Tj rise below 235°C - unacceptable. Use at least 200mm² of copper under the drain tab, plus a thermal via array, to keep Tj below 110°C at full load.
Keep the high-current loop (drain tab → transformer primary winding → source sense resistor → source pin) area below 5mm² to minimize parasitic inductance and ringing on the drain-node during 700V avalanche events. Place the gate-drive resistor (typ. 10-47Ω) within 5mm of the gate pin to suppress gate-oscillation. The CoolMOS P7 Zener-protected gate tolerates a missing gate resistor better than older CoolMOS generations, but adding one is still best practice.
Do not parallel IPN70R600P7SATMA1 devices without individual gate-source resistors - the positive temperature coefficient of Rds(on) at high current is weaker on Superjunction silicon than on planar MOSFETs, so current sharing is less guaranteed. Ensure Vdss derating is at least 80% (i.e. peak drain voltage ≤ 560V) for reliable long-term operation per Infineon's Superjunction design guidelines.
The PG-SOT223 drain tab must be soldered to a copper pour of at least 100mm² on the top layer, with thermal vias to the inner / bottom layers for spreading. Verify solder fillet wetting on the tab during AOI - insufficient tab solder is the most common field failure mode for SOT-223 power MOSFETs and causes thermal runaway under full load.
Información de cumplimiento
RoHS compliant and halogen-free per Infineon product page. Not AEC-Q100 qualified - this is a consumer/industrial part. For automotive auxiliary SMPS, source an AEC-Q100-qualified Infineon CoolMOS equivalent.
