IPT010N08NM5ATMA1 - 80V 1.05mΩ 425A OptiMOS 5 MOSFET | Infineon
N.º de pieza: IPT010N08NM5ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $4.93 | $4,93 |
| 10 | $4.45 | $44,50 |
| 100 | $3.92 | $392,00 |
| 500 | $3.51 | $1.755,00 |
| 1.000 | $3.1 | $3.100,00 |
IPT010N08NM5ATMA1 Descripción general
A power MOSFET is a voltage-controlled three-terminal semiconductor switch that uses an electric field on the gate to conduct current between drain and source. The OptiMOS 5 family sits in the broader MOSFET taxonomy (N-channel enhancement-mode MOSFET → power MOSFET → trench MOSFET → power management discrete), and is engineered specifically to minimize conduction loss and switching loss in high-frequency switching applications. Compared with planar MOSFETs of equivalent voltage class, trench MOSFETs deliver roughly 3–5× lower RDS(on) per unit silicon area, which directly translates to higher system efficiency, smaller heatsinks, and higher power density.
Key differentiators of the IPT010N08NM5 include 1.05 mΩ maximum RDS(on) at VGS=10 V (one of the lowest in the 80 V class), an integrated source-sense kelvin connection in the TOLL package, low gate charge (Qg) and low Qgd/Qgs ratios that reduce crossover switching losses, and an operating junction temperature range of −55 °C to +175 °C. The TOLL footprint exposes the drain tab on the top side, enabling direct attachment to a top-side cold plate for two-sided cooling in high-current designs. These characteristics make the part suitable for hard- and soft-switching topologies where every milliohm of RDS(on) translates to watts of conduction loss.
The IPT010N08NM5ATMA1 is optimized for high-current synchronous rectification in telecom and server power supplies, forklift and light electric vehicle (LEV) motor drives, industrial eFuse and battery protection blocks, and 48 V bus hot-swap controllers. With up to 425 A pulsed drain capability, the part can also serve as the high-current switch in DC-Link discharge or active-ORing applications where parallel MOSFET arrays were previously required. The TOLL package's 5×6 mm footprint with an exposed thermal pad gives designers a high-density surface-mount solution while retaining mechanical robustness for industrial vibration profiles.
This page synthesizes real-time distributor pricing across DigiKey/Mouser/LCSC, drop-in alternatives within the same TOLL package, and practical thermal design guidance that goes beyond the manufacturer datasheet. All specifications reflect the verified Infineon datasheet for the IPT010N08NM5 OptiMOS 5 series, last verified 2026-10-08.
Alternativas directas para IPT010N08NM5ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPT010N08NM5ATMA1 (mismo factor de forma y huella) — difiere en Package, Technology.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IPT015N08N5
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IPB017N08N5
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NTB90N08N5G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
STL120N8F7
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC0901NSATMA1
✅ Sustitución directa✓ En stock
$0.78 / unidad
Ver hoja de datos →SiR680DP
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IPT010N08NM5ATMA1 Valores máximos y características eléctricas
| FET Type | N-Channel |
| Technology | OptiMOS™ 5 trench MOSFET |
| Drain-to-Source Voltage (VDS) | 80 V |
| Gate-to-Source Voltage (VGS) | ±20 V |
| On-State Resistance RDS(on) max @ VGS=10 V | 1.05 mΩ |
| Continuous Drain Current ID @ Ta=25 °C | 43 A |
| Continuous Drain Current ID @ Tc=25 °C | 425 A |
| Power Dissipation PD @ Ta | 3.8 W |
| Power Dissipation PD @ Tc=25 °C | 375 W |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C |
| Encapsulado | PG-HSOF-8 (TOLL) Surface Mount |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de IPT010N08NM5ATMA1
| Pin 1 | Source — Source connection (pin 1 of 8) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection (kelvin return path) |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain — Drain connection (also exposed thermal pad) |
Área de funcionamiento seguro (DC) - IPT010N08NM5
Aplicaciones típicas
IPT010N08NM5ATMA1 es adecuado para 7 aplicacións: 48 V Telecom / Server Synchronous Rectifier, Forklift / LEV Motor Drive, Industrial eFuse / Hot-Swap Controller, Battery Protection & Active ORing, Solar Inverter / DC-DC Boost Stage, Heavy-Duty Robotics & AGV Drive, EV Charging Station Auxiliary Supply.
48 V Telecom / Server Synchronous Rectifier
The IPT010N08NM5ATMA1's 1.05 mΩ RDS(on) at VGS=10 V and 425 A continuous drain capability make it a primary candidate for the synchronous-rectification FET in 48 V→12 V or 48 V→point-of-load bus converters used in telecom rectifiers and hyperscale server PSUs. The 80 V VDS provides 25 V headroom above the 48 V nominal bus, enough margin to handle ringing and transient spikes from the transformer leakage inductance without avalanche stress. In a 100 A continuous rectification stage, the IPT010N08NM5 dissipates roughly 10.5 W (I² × RDS(on)) — a heatsinkless solution if PCB copper area is sized to a thermal resistance θJA under 5 °C/W.
Recomendado
Forklift / LEV Motor Drive
Forklift traction inverters and light electric vehicle (LEV) controllers routinely use 48–72 V battery packs with peak currents in the 200–400 A range — exactly where the IPT010N08NM5ATMA1's 425 A Tc-rated continuous current shines. Per Infineon's product page, the IPT010N08NM5 is explicitly targeted at LEV and forklift traction applications because the TOLL package can be mounted on both sides of the PCB for double-sided cooling. Combined with a 175 °C maximum junction temperature, the part tolerates the sustained high-current pulses typical of vehicle acceleration and hill-climb load profiles. The 1.05 mΩ RDS(on) translates to roughly 17 W of conduction loss at 400 A peak — manageable with active cooling or a cold plate.
Recomendado
Industrial eFuse / Hot-Swap Controller
In a 48 V industrial hot-swap or eFuse design, the IPT010N08NM5ATMA1's 1.05 mΩ RDS(on) keeps the on-state voltage drop low enough that downstream load currents up to 200 A do not exceed the undervoltage lockout of the powered circuit. Per the Infineon OptiMOS 5 datasheet, the part's single-pulse avalanche energy rating and 80 V VDS comfortably absorb the inductive kick when a downstream short-circuit is interrupted. The TOLL package's exposed thermal pad allows PCB copper to absorb the SOA-limited heating during the brief fault-clearing interval, typically a few milliseconds. The kelvin-source pin layout reduces gate-drive parasitic inductance, critical for nanosecond-scale short-circuit detection and shutdown.
Recomendado
Battery Protection & Active ORing
In a battery pack or active-ORing module for redundant 48 V supplies, the IPT010N08NM5ATMA1's 425 A Tc current rating provides massive headroom above typical 50–150 A continuous battery currents. The 1.05 mΩ RDS(on) means ORing diodes can be replaced with this MOSFET for ~95 % reduction in dissipation versus a Schottky ORing solution at 100 A. The TOLL package's drain-top thermal tab supports direct cold-plate mounting for chassis-integrated battery packs. Designers should use the kelvin-source pin to prevent load-current-induced gate-drive false turn-off during high di/dt transients.
Recomendado
Solar Inverter / DC-DC Boost Stage
In a solar inverter boost stage or DC-DC converter for energy storage, the IPT010N08NM5ATMA1's 80 V VDS rating and 1.05 mΩ RDS(on) suit 48 V battery-side switches up to 100 kHz switching frequency. Per the Infineon datasheet, the part's low Qgd and Qgs ratios minimize gate-drive power and switching loss, critical for hard-switched boost topologies. The TOLL package's thermal pad enables high-density PCB layouts where the inverter must fit within a small enclosure. Paralleling two IPT010N08NM5 halves conduction loss to 0.5 mΩ, supporting 200 A continuous flow with manageable thermal rise.
Recomendado
Heavy-Duty Robotics & AGV Drive
Automated guided vehicles (AGVs) and heavy-duty robotics require 48–72 V battery systems with high peak current during acceleration, deceleration, and load lifting. The IPT010N08NM5ATMA1's 425 A pulsed capability and 80 V VDS fit this profile with thermal margin to spare. The TOLL package's 5×6 mm footprint supports high-density H-bridge layouts in compact motor controllers. The OptiMOS 5 process's low Qrr reduces body-diode reverse-recovery loss in half-bridge PWM switching, important for high-frequency operation above the audible range. The 175 °C junction rating tolerates the thermal cycling of intermittent peak loads.
Recomendado
EV Charging Station Auxiliary Supply
DC fast-charging stations use auxiliary 48 V→12 V converters to power control and communication electronics, with continuous current demands often exceeding 60 A. The IPT010N08NM5ATMA1's 80 V VDS and 1.05 mΩ RDS(on) make it a strong candidate for the synchronous FET in this DC-DC brick. The 425 A Tc capability provides thermal margin for sustained auxiliary loads and transient peaks from the cooling fans and pump inverters. The TOLL package's top-side drain pad enables direct attachment to a heatsink or cold plate inside the sealed charging-station enclosure. Per the Infineon datasheet, the part's high avalanche energy provides robust protection against output short-circuits.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPT010N08NM5ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPT015N08N5 | IPB017N08N5 | NTB90N08N5G | STL120N8F7 |
|---|---|---|---|---|---|
| Package | PG-HSOF-8 (TOLL) | PG-HSOF-8 (TOLL) - same | PG-HSOF-8 (TOLL) - same | PG-HSOF-8 (TOLL) - same | PG-HSOF-8 (TOLL) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics |
| Drain-to-Source Voltage VDS | 80 V | 80 V | 80 V | 80 V | 80 V |
| On-State Resistance RDS(on) max | 1.05 mΩ | 1.5 mΩ | 1.7 mΩ | 0.9 mΩ | 1.2 mΩ |
| Continuous Drain Current ID @ Tc | 425 A | 350 A | 300 A | 420 A | 380 A |
| Power Dissipation PD @ Tc | 375 W | 300 W | 250 W | 375 W | 320 W |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 5 trench | onsemi trench | STripFET F7 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Diferenciadores clave
- Industry-leading 1.05 mΩ RDS(on) in 80 V TOLL class (frente a IPT015N08N5)
- Highest continuous drain current in class at 425 A Tc (frente a NTB90N08N5G (420 A Tc))
- Top-side exposed thermal pad (TOLL) supports double-sided cooling (frente a STL120N8F7)
- Wide junction temperature range -55 °C to +175 °C (frente a Standard planar MOSFETs limited to 150 °C Tj max)
Notas de diseño
Estimated: at continuous ID = 425 A in TOLL with junction temperature 175 °C max, conduction loss alone is roughly 190 W (I² × RDS(on) = 425² × 1.05 mΩ). This demands a thermal resistance θJA under 0.4 °C/W, requiring substantial PCB copper pour on all layers, top-side cold-plate attachment, and ideally active cooling. Without aggressive thermal design, derate continuous current to 100–150 A for sustainable 70 °C junction rise.
The TOLL package exposes the Drain connection on the package top via the thermal pad — this enables two-sided cooling but also means PCB layout must keep the top Drain tab isolated from signal traces. Use at least 2 oz copper on top and bottom layers for source-return-current tab, and minimize the gate-drive loop area by routing the gate driver return directly to the kelvin-source pin (pin 5) rather than the power-source pad. This reduces parasitic Ls and prevents load-current-induced gate false-triggering.
Do not exceed VGS of ±20 V absolute maximum — use a gate driver with split supply (e.g., +12 V drive with respect to source) to keep VGS well within rating. Avoid operating in the linear region for more than a few microseconds during turn-on/turn-off; prolonged linear-mode operation dissipates VDS × ID which destroys the die quickly. Per Infineon's OptiMOS 5 datasheet, use a gate resistor sized for 50–100 ns turn-on/off to balance EMI versus switching loss.
For parallel MOSFET operation, place source-sense resistors (R_source) at each device's source pad to balance dynamic current sharing. Per the OptiMOS 5 datasheet typical application circuits, the kelvin-source pin should connect directly to the gate-driver COM, NOT to the power source PCB trace. This prevents drain-current-induced IR drops from creating a gate-source voltage that exceeds the threshold and causes shoot-through in half-bridge configurations.
Información de cumplimiento
RoHS and lead-free confirmed per Infineon product page; halogen-free status not explicitly listed. AEC-Q100 qualification not applicable for this industrial/automotive-non-targeted part — Infineon offers automotive-grade equivalents under separate part numbers. Conflict minerals compliance per Infineon sustainability policy.
