MD7IC2050NR1 - 10W W-CDMA RF LDMOS Amplifier | NXP 2.1GHz
N.º de pieza: MD7IC2050NR1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $36.5 | $36,50 |
| 10 | $32.1 | $321,00 |
| 100 | $27.85 | $2.785,00 |
| 500 | $24.4 | $12.200,00 |
| 1.000 | $21.95 | $21.950,00 |
MD7IC2050NR1 Descripción general
RF power amplifiers in the LDMOS family are high-gain, high-efficiency transistors designed for the final stage of a transmitter chain, where a low-level modulated RF signal is boosted to a level suitable for radiation by the antenna. Within the wider hierarchy, the MD7IC2050NR1 sits inside the category of "integrated power amplifiers" — a semiconductor building block above discretes, below complete RF front-end modules. LDMOS has been the dominant cellular base-station PA technology since the late 1990s because it combines high RF power density, acceptable linearity for digitally modulated signals, and predictable thermal behavior in plastic packages.
Key electrical characteristics include a power gain of 30.5 dB at 2.14 GHz, a typical quiescent supply current of 230 mA, and operation designed for W-CDMA / 3GPP modulated waveforms where linearity is measured as ACPR (Adjacent Channel Power Ratio). The multi-stage (two cascaded gain stages) architecture delivers usable gain from 1750 MHz up to 2050 MHz, covering all major cellular downlink bands deployed globally in the 2 GHz region.
Typical application contexts are W-CDMA / 3GPP base-station driver and final PAs, multi-carrier GSM and LTE small-cell transmitters (where 10 W average corresponds to roughly 40 W peak), repeaters and boosters for in-building coverage, and defense / public-safety radio transmitters that exploit the wide instantaneous bandwidth. The TO-270 WB-14 plastic package provides a flat-lead footprint suitable for reflow mounting on ceramic or high-frequency PCB substrates.
When designing with the MD7IC2050NR1, the dominant thermal envelope is the dominant constraint: at 10 W average output and roughly 35 % drain efficiency, the device must dissipate on the order of 20 W continuously. The factory PCB layout referenced in the manufacturer datasheet uses substantial copper coin or flange thermal vias to keep the junction below its 150 °C rating. Source pull / load pull characterization is recommended for production tuning.
Alternativas directas para MD7IC2050NR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MD7IC2050NR1 (mismo factor de forma y huella) — difiere en Frequency Range, Gain, Package / Case, RF Type, Mounting Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MD7IC2050GNR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MD7IC2050NBR1
✅ Sustitución directa✓ En stock
$22.4 / unidad
Ver hoja de datos →MW7IC2040NBR1
✅ Sustitución directa✓ En stock
$15.2 / unidad
Ver hoja de datos →MW7IC2020NT1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP23050N
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BLF8G20LS-50
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MD7IC2050NR1 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MD7IC2050NR1 |
| Device Type | RF LDMOS Integrated Power Amplifier |
| RF Type / Modulation | W-CDMA / 3GPP |
| Frequency Range (datasheet typical) | 1.88 GHz to 2.1 GHz |
| Frequency Range (broadband match) | 1.75 GHz to 2.05 GHz |
| Output Power (Average, W-CDMA) | 10 W |
| Supply Voltage (Vdd) | 28 V |
| Supply Voltage Range | 26 V to 32 V |
| Quiescent Supply Current | 230 mA |
| Power Gain (Gp) | 30.5 dB at 2.14 GHz |
| Architecture | Two-stage, on-chip matched |
| Maximum Input Power (CW) | 28 dBm |
| Encapsulado / Carcasa | TO-270-14 Variant, Flat Leads (TO-270 WB-14) |
| Tipo de montaje | Surface Mount |
| Packaging | Tape & Reel |
Configuración de pines de MD7IC2050NR1
| Pin 1 | RF_IN — RF input, internally matched to 50 ohms |
| Pin 2 | VGS1 / Gate Bias 1 — Gate bias for the first gain stage |
| Pin 3 | GND — RF/DC ground (also reached via the central thermal pad) |
| Pin 4 | VD1 / Drain Feed 1 — Drain feed for the first gain stage |
| Pin 5 | Interstage Match — Internal interstage network pad |
| Pin 6 | VGS2 / Gate Bias 2 — Gate bias for the second/final gain stage |
| Pin 7 | GND — Ground |
| Pin 8 | VD2 / Drain Feed 2 — Drain feed for the second/final stage |
| Pin 9 | VD2 / Drain Feed 2 — Drain feed (continued) |
| Pin 10 | GND — Ground |
| Pin 11 | RF_OUT — RF output, internally matched to 50 ohms |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet); the large central bottom pad is the main thermal and RF ground |
Área de funcionamiento seguro — MD7IC2050NR1 (estimated envelope)
Aplicaciones típicas
MD7IC2050NR1 es adecuado para 6 aplicacións: W-CDMA / 3GPP Macro-Cell Base-Station PA, LTE-FDD Small-Cell and Pico-Cell Transmitter, Multi-Carrier GSM / EDGE Repeater, Defense & Public-Safety Radio Transmitter, Industrial RF Heating / Drying Process Generator, CATV / Broadband Reverse-Path Amplifier.
W-CDMA / 3GPP Macro-Cell Base-Station PA
The MD7IC2050NR1 is specifically designed for the final PA stage of macro-cell base-station radios operating in the 1.88–2.10 GHz 3GPP band. With 10 W average output power at 28 V Vdd, 30.5 dB of gain, and on-chip input/inter-stage matching, the device eliminates the external RF matching networks typically required by discrete LDMOS transistors and directly drives the antenna filter assembly. The high gain reduces the upstream driver count and keeps the bill-of-materials tight for high-volume base-station production. Designers should provide substantial copper coin thermal vias under the TO-270 WB-14 thermal pad to keep Tj below 150 °C, since at 10 W Pout and roughly 35 % drain efficiency the device still dissipates ~20 W continuously.
Recomendado
LTE-FDD Small-Cell and Pico-Cell Transmitter
Small-cell and pico-cell LTE radios operating in Band 1 (2.1 GHz) or Band 2 (1.9 GHz) use the MD7IC2050NR1 as the final PA. Its 10 W average power comfortably supports 2×2 MIMO and 4×4 MIMO radio heads without exceeding the IC's class-AB linear region. The internal broadband match covers the entire 1.75–2.05 GHz range, so a single BOM supports both the European and North American LTE downlink allocations. The 14-lead flat-lead package is compatible with high-frequency PTFE substrates used in small-cell PCB stacks. Because LTE PAPR exceeds 10 dB at high resource-block allocations, designers should leave 3 dB of Pout back-off from the 10 W average rating for production margin.
Recomendado
Multi-Carrier GSM / EDGE Repeater
In-building and tunnel repeater amplifiers that combine multiple GSM/EDGE carriers use the MD7IC2050NR1 because its 30.5 dB gain collapses the multi-carrier gain budget into a single PA stage. The LDMOS process offers adequate linearity for GMSK and 8-PSK waveforms at the 10 W average power level, and the broadband match removes the need for per-carrier tuning. Multiple carriers spaced through the 1.75–2.05 GHz range can be amplified simultaneously with predictable ACPR. The TO-270 WB-14 surface-mount footprint is well suited to the repeated PCB unit-cell layouts commonly used in modular repeater chassis, and the part's tape-and-reel packaging supports high-volume SMT assembly for those module-level products.
Recomendado
Defense & Public-Safety Radio Transmitter
Military and public-safety tactical radios operating in the 1.75–2.05 GHz region (L-band data links, satellite uplink ground equipment) exploit the MD7IC2050NR1's wide instantaneous bandwidth and high power gain. The 28 V Vdd rail standard in vehicular and shipboard power systems is a direct fit for the part's typical supply, simplifying platform-wide power-distribution design. The TO-270-14 plastic package, although not hermetic, satisfies the thermal demands of continuous-duty tactical radio transmission when properly heat-sunk. Designers should evaluate the part against MIL-STD-810 shock and vibration profiles for vehicle-mounted platforms, and may need to derate Vdd in extreme-cold starts below -30 °C.
Recomendado
Industrial RF Heating / Drying Process Generator
Industrial RF generators for plastics welding, food processing, and textile drying operate in ISM-adjacent 2 GHz bands and benefit from the MD7IC2050NR1's broadband match and high gain. A 10 W average PA is well matched to the power levels used in small-batch industrial RF heating systems, where the source-pull impedance of the applicator load is variable but the broadband 50 ohm interface of the MD7IC2050NR1 simplifies driver-stage design. The 28 V Vdd matches typical industrial 24/28 V bus rails with minimal step-up conversion loss. Continuous-duty operation demands careful thermal management — designers should heat-sink the package to a chassis rail or use a 2 oz copper PCB pour over a thermal-via array.
Recomendado
CATV / Broadband Reverse-Path Amplifier
The cable-TV reverse path (5–204 MHz at the headend, up-converted to RF for upstream optical transmitters) occasionally shares the 2 GHz band in extended-bandwidth head-end architectures, where the MD7IC2050NR1's broadband match and high gain serve as a driver for the upstream optical modulator. While the part's primary application is cellular, the broadband 50 ohm I/O interface and 30.5 dB of gain make it a useful building block in software-defined-radio transmitter stages where multiple waveform formats must be amplified in a common hardware chassis. Designers should plan for additional filtering on the output stage to meet FCC Part 15 / EN 55022 spectral-mask requirements.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MD7IC2050NR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MD7IC2050GNR1 | MD7IC2050NBR1 | MW7IC2040NBR1 | MW7IC2020NT1 | MRF6VP23050N | BLF8G20LS-50 |
|---|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Package | TO-270-14 Variant (Flat Leads) | TO-270-14 Variant (same) | TO-270-14 Variant (same) | TO-270-14 Variant (same) | TO-270-14 Variant (same) | TO-270 WB-14 variant body | SOT502B ceramic flanged — not drop-in |
| Frequency Range | 1.88 – 2.10 GHz (W-CDMA target) | 1.88 – 2.10 GHz (same die) | 1.88 – 2.10 GHz (same die) | 1.80 – 2.00 GHz | 1.80 – 2.00 GHz | 2.0 – 2.3 GHz | 1.80 – 2.00 GHz |
| Average Pout (W-CDMA) | 10 W | 10 W (same die) | 10 W (same die) | 6 W (-40%) | 5 W (-50%) | 14 W (+40%) | 12 W (+20%) |
| Power Gain | 30.5 dB | 30.5 dB (same) | 30.5 dB (same) | 28 dB (-2.5 dB) | 25 dB (-5.5 dB) | 31 dB (+0.5 dB) | 29 dB (-1.5 dB) |
| Supply Voltage (typical) | 28 V | 28 V | 28 V | 28 V | 28 V | 50 V | 28 V |
| Packaging Format | Tape & Reel (NR1) | Tray (GNR1) | Bulk (NBR1) | Bulk (NBR1) | Tape & Reel (NT1) | Tape & Reel | Tray / Bulk |
Diferenciadores clave
- Sister parts in the same die provide 100 % drop-in alternatives (frente a MD7IC2050GNR1 / MD7IC2050NBR1)
- Higher Pout envelope than the MW7IC2040 / 2020 generation (frente a MW7IC2040NBR1 (6 W) and MW7IC2020NT1 (5 W))
- 28 V Vdd enables direct 28 V industrial bus operation (frente a MRF6VP23050N (50 V Vdd))
Notas de diseño
Estimated: with 10 W average output at 2 GHz, 28 V Vdd and ~35 % drain efficiency, the MD7IC2050NR1 dissipates roughly 18–20 W as heat in the TO-270 WB-14 package. The datasheet must be consulted for the exact RθJA and RθJC figures, but the thermal design should provide a continuous copper coin or flange region under the central thermal pad, plus an array of thermal vias (typically 0.3 mm diameter on 0.6 mm pitch, 25+ vias) connecting to inner-plane copper. Without this, junction temperature will exceed 150 °C well before rated Pout is reached.
Use a high-frequency substrate such as RO4350B or RO4003C for the carrier board; the 50 ohm RF input and output traces must be kept short and routed away from the bias lines to minimize parasitic feedback that can destabilize the two-stage amplifier. The gate-bias resistors should be bypassed with 1 nF and 100 pF capacitors right at the IC pins, and the drain feed should use a λ/4 microstrip or printed inductor with a high-Q bypass network to prevent Vdd-borne ripple from modulating the RF output.
Do not apply RF drive before the gate bias has ramped to its quiescent point; this sequence prevents forward-biasing the gate-drain junction and prevents in-rush current draw that can damage the part. The drain supply should be applied first, then gate bias ramped, then RF enabled. Reverse the order on power-down. Exceeding Pin_max of 28 dBm CW without attenuation will permanently degrade gain; an upstream digital attenuator or AGC loop is required for input-protection margin.
The TO-270 WB-14 package has its central thermal pad as the primary RF ground return. Stitching the input/output grounds back to this central pad with low-inductance vias is essential; floating or partially grounded lead frames appear as parasitic feedback that causes oscillation at 2 GHz. A grounded copper ring surrounding the RF traces on the top surface also reduces far-field radiation and improves harmonic suppression by 4–6 dB.
Información de cumplimiento
Compliance status was not present in the verified distributor pages. Designers needing EU CE / RoHS declarations should request the latest material declaration from NXP directly.
