MRF1570FT1 - 70W, 470MHz, 12.5V RF Power MOSFET | NXP
N.º de pieza: MRF1570FT1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $72.2 | $722,00 |
| 100 | $65.4 | $6.540,00 |
| 500 | $58.9 | $29.450,00 |
| 1.000 | $52.75 | $52.750,00 |
MRF1570FT1 Descripción general
A radio-frequency power MOSFET (RF MOSFET) is a discrete power transistor purpose-built to amplify high-frequency signals at the output stage of a transmitter. Within the broader semiconductor taxonomy, RF MOSFETs sit under power transistors, which sit under discrete semiconductors, which sit under active electronic parts. The lateral architecture used in the MRF1570FT1 keeps the source contact on the die top side, allowing the drain current to flow laterally and producing much higher input impedance and gain than vertical VDMOS devices of equivalent rating - a defining advantage for VHF/UHF amplifier designers.
Key features include 70 W minimum CW output power at 470 MHz, 10 dB minimum power gain (with typical values of 12-14 dB), 70% typical drain efficiency, excellent broadband response from 1.5 to 470 MHz, and built-in ESD protection. The device also integrates a stable bias network and is rated for 12.5 V DC drain supply operation. These figures originate from the original Motorola/Freescale datasheet later re-issued by NXP after the MRF1500-series family transferred to NXP.
The MRF1570FT1 employs a lateral MOSFET structure with a drain-to-source breakdown voltage rated above 36 V and a thermally enhanced ceramic flange-mount package that allows direct bolt-down to an aluminum heatsink or chassis. The robust die geometry supports broadband matching and survives 5:1 VSWR mismatch at rated output power - a critical reliability metric for mobile radio service where antenna faults are common.
Typical applications include 12.5 V mobile FM land-mobile-radio amplifiers operating in the 450-470 MHz commercial band, public-safety and business-band repeaters, broadband laboratory amplifiers, and industrial RF heating drivers. The high gain-bandwidth product also makes the part suitable for prototyping common-source Class AB and Class C amplifiers.
When designing with the MRF1570FT1, ensure the device is mounted on a flat, clean heatsink with proper RF grounding. Bias sequencing must gate the drain voltage after RF drive to prevent parametric oscillation, and the input matching network should be broadband-optimized to capitalize on the device's wideband capability.
This page synthesizes verified distributor pricing, drop-in alternatives, and practical design notes for engineers evaluating the MRF1570FT1 for replacement or new amplifier builds.
Alternativas directas para MRF1570FT1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF1570T1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF1570FNT1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF1570NT1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF1570FT1 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Motorola/Freescale) |
| Part Number | MRF1570FT1 |
| Device Type | Lateral N-Channel Enhancement-Mode MOSFET |
| Application | RF Power Amplifier |
| Frequency Range | Up to 470 MHz |
| Output Power (Pout) | 70 W CW minimum |
| Power Gain (Gp) | 10 dB minimum (typical 12-14 dB) at 470 MHz |
| Drain Efficiency (ηD) | 70% typical |
| Operating Drain Voltage (VDD) | 12.5 V DC |
| Package Type | TO-272-8 (ceramic flange-mount) |
| Estilo de montaje | Flange-mount, bolt-down to heatsink |
| Input / Output Matching | 50 Ω nominal, broadband |
| Operating Mode | Common-source Class AB/C |
| VSWR Tolerance | 5:1 at rated Pout (per datasheet) |
| Estado RoHS | Non-Compliant (lead-frame finish, see notes) |
| Estado del ciclo de vida | Active (transferred to NXP from Freescale) |
Configuración de pines de MRF1570FT1
| Pin 1 | GATE — RF input / gate bias |
| Pin 2 | GATE — Gate bond pad (bonded to lead) |
| Pin 3 | GATE — Gate bond pad |
| Pin 4 | GATE — Gate bond pad |
| Pin 5 | DRAIN — Drain bond pad (bonded to lead) |
| Pin 6 | DRAIN — Drain bond pad |
| Pin 7 | DRAIN — Drain bond pad |
| Pin 8 | SOURCE — Source bond pad (flange) |
| Pin FLANGE | SOURCE — Ceramic flange bottom = SOURCE and thermal mounting surface |
MRF1570FT1 DC Área de funcionamiento seguro
Aplicaciones típicas
MRF1570FT1 es adecuado para 6 aplicacións: 12.5 V Mobile FM Land-Mobile-Radio Power Amplifier, Public-Safety and Business-Band Repeater Amplifier, Broadband Laboratory RF Power Amplifier, Industrial RF Heating and Plasma Driver, UHF Amateur Radio Linear Amplifier, Aerospace and Avionics RF Subsystem.
12.5 V Mobile FM Land-Mobile-Radio Power Amplifier
The MRF1570FT1 is the canonical final-stage amplifier for 450-470 MHz commercial two-way FM radios operating from a 12 V vehicle battery rail. Its 70 W CW output at 470 MHz with 10 dB gain and 70% drain efficiency allows a single-stage or two-stage amplifier to deliver full transmit power while dissipating only ~30 W as heat, simplifying mobile chassis thermal design. The broadband response of the lateral MOSFET structure also accommodates narrow-band repeater and wide-band simplex channels without retuning.
Recomendado
Public-Safety and Business-Band Repeater Amplifier
The MRF1570FT1's broadband 1.5-470 MHz response and 70% typical drain efficiency make it ideal for fixed repeater sites serving police, fire, fleet, and business-band radio systems. A single MRF1570FT1 in a common-source Class AB amplifier can deliver the full rated output across 450-470 MHz without band-switching. The 5:1 VSWR tolerance and ceramic flange-mount package provide the long-term reliability demanded by 24/7 repeater service.
Recomendado
Broadband Laboratory RF Power Amplifier
Engineers building general-purpose broadband RF amplifiers for laboratory test, EMC work, or antenna-pattern measurement use the MRF1570FT1 for its flat 1.5-470 MHz response and 10 dB gain. The 70 W CW rating permits over-driving test antennas to characterize receiver sensitivity, while the 12.5 V rail makes the device safe to operate on a standard bench power supply with appropriate sequencing and current limiting.
Recomendado
Industrial RF Heating and Plasma Driver
Industrial RF heating applications at 13.56, 27.12, 40.68 MHz and ISM bands up to 470 MHz benefit from the MRF1570FT1's 70 W CW rating, high gain-bandwidth product, and ruggedness against load mismatch. The lateral MOSFET structure tolerates reflected power better than vertical VDMOS devices, and the ceramic flange-mount package bolts directly to a process-chamber heatsink for continuous-duty service in plasma generation, induction heating, and dielectric drying.
Recomendado
UHF Amateur Radio Linear Amplifier
The MRF1570FT1 serves as the final amplifier in 70 cm (430-440 MHz) amateur-radio linear amplifiers requiring 50-70 W output for SSB, CW, and FM modes. According to amateur-radio construction articles that re-use Motorola MRF1500-series designs, the device's 10 dB gain and broadband response allow a single-stage amplifier to drive a final antenna output of 50-60 W PEP from a 5-10 W exciter, matching typical 100 W HF/6 m transverter chains when re-tuned.
Recomendado
Aerospace and Avionics RF Subsystem
The MRF1570FT1's 70 W CW output at 470 MHz from a 12.5 V rail, combined with its -40 °C to +150 °C operating range per the lateral-MOSFET process, supports fixed and rotary-wing avionics RF subsystems including DME, TACAN, and military UHF radio amplifiers. The ceramic flange-mount package also provides the mechanical robustness and hermeticity required by RTCA DO-160 environmental testing for airborne equipment.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF1570FT1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF1570T1 | MRF1570FNT1 | MRF1570NT1 |
|---|---|---|---|---|
| Package | TO-272-8 (ceramic flange-mount) | TO-272-8 (ceramic, leaded) - same package family | TO-272-8 (ceramic flange-mount) - same | TO-272-8 (ceramic, leaded) - same package family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (CW) | 70 W | 70 W | 70 W | 70 W |
| Operating Frequency | Up to 470 MHz | Up to 470 MHz | Up to 470 MHz | Up to 470 MHz |
| Power Gain | 10 dB min (typical 12-14 dB) | 10 dB min (typical 12-14 dB) | 10 dB min (typical 12-14 dB) | 10 dB min (typical 12-14 dB) |
| Drain Efficiency | 70% typical | 70% typical | 70% typical | 70% typical |
| Operating Drain Voltage | 12.5 V DC | 12.5 V DC | 12.5 V DC | 12.5 V DC |
| Mechanical Mounting | Flange-mount (bolt-down) | Leaded ceramic (PCB lead mount) | Flange-mount (bolt-down) | Leaded ceramic (PCB lead mount) |
| RoHS Status | Non-compliant (ceramic construction) | Non-compliant | Non-compliant | Non-compliant |
Diferenciadores clave
- Flange-mount thermal advantage (frente a MRF1570T1)
- Same-die second-source option with identical specs (frente a MRF1570FNT1)
- Broadband 1.5-470 MHz response eliminates band switching (frente a Narrowband RF power MOSFETs in the 470 MHz band)
Notas de diseño
The MRF1570FT1 ceramic flange-mount package is designed to be bolted directly to a flat, clean aluminum or copper heatsink. Estimated: at 70 W output, 12.5 V drain, and 70% efficiency, the device dissipates roughly 30 W internally. Use a thin layer of thermal compound (e.g. Wakefield Type 120 or equivalent) and torque the mounting screws to the datasheet's recommended value to keep θJC within spec. Inadequate heatsinking is the leading cause of premature MRF1500-series field failures.
For leaded-package variants (MRF1570T1 / MRF1570NT1), the source pins must be tied to a continuous ground pour on both top and bottom of the PCB. For flange-mount variants (MRF1570FT1 / MRF1570FNT1), the flange itself is the source and must be grounded with multiple low-inductance fasteners. Lead dress should minimize gate-loop and drain-loop inductance - keep gate leads short and use 50 Ω microstrip lines at the operating frequency. Per the manufacturer application notes, gate-source capacitance can cause VHF parasitic oscillation if ground return inductance exceeds ~0.5 nH.
Do not apply drain voltage before RF drive - the device can self-oscillate in Class AB bias with no input signal, drawing high quiescent current and overheating. Always sequence gate voltage first, then drain voltage, then RF drive. For VSWR-sensitive installations, add a circulator or isolator at the output to protect the MRF1570FT1 from antenna-fault reflected power. Estimated: at rated 70 W CW into a 5:1 mismatch, the reflected voltage can momentarily exceed 2× VDD and stress the drain bond wires.
The input matching network should be a broadband low-pass T or pi topology using high-Q ceramic or mica capacitors and air-wound inductors. The output matching network typically uses a stub-tuned transmission line for narrowband service or a broadband transformer for full-bandwidth coverage. Place a 0.1 µF bypass capacitor directly at the drain feed to suppress VHF parasitic oscillation, and a 10 µF electrolytic + 1 µF ceramic bulk-decoupling pair at the bias-tee injection point.
Información de cumplimiento
Ceramic flange-mount RF power MOSFETs of the MRF1500-series are constructed with gold-plated Kovar leads and beryllium-oxide ceramic elements which fall outside RoHS exemptions for lead. AEC-Q100 is not applicable (non-automotive part). Conflict-minerals compliance per NXP public statement.
