MRF19125R5 - 24W RF Power LDMOS 1.93GHz NI-880 | NXP
N.º de pieza: MRF19125R5 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.65 | $346,50 |
| 100 | $30.8 | $3.080,00 |
| 500 | $27.5 | $13.750,00 |
| 1.000 | $25.2 | $25.200,00 |
MRF19125R5 Descripción general
An RF power LDMOS transistor is a specialized power MOSFET built on a laterally diffused metal-oxide-silicon process that delivers high RF power with high gain and efficiency at microwave and UHF frequencies. It sits in the power transistor hierarchy as: LDMOS -> RF power transistor -> RF MOSFET -> discrete semiconductor -> power amplifier building block. LDMOS has become the dominant technology for cellular base-station power amplifiers because it offers an excellent trade-off between power density, linearity, gain, and cost at frequencies up to 3.8 GHz.
Key features of the MRF19125R5 include 1.3 A quiescent/test current at 26 V, 65 V maximum drain-source voltage rating, integrated ESD protection, and NXP's Ni-880 ceramic flange package with low thermal resistance for high-power RF operation. The part is part of NXP's MRF19125 family targeted at 1.93 GHz industrial-scientific-medical (ISM) and PCS/DCS infrastructure amplifier designs where high gain and ruggedness are required.
Architecturally, the device uses NXP's sub-micron LDMOS process, providing a high breakdown voltage that allows operation at 26-28 V while maintaining good linearity and high drain efficiency (typically 50%+ at P1dB). The NI-880 ceramic package offers a low Rth(j-c) thermal path, which is essential for dissipating the substantial heat generated in continuous-wave or high-duty-cycle base-station service.
Typical applications include 1.93 GHz industrial-scientific-medical (ISM) band amplifiers, PCS/DCS base-station power amplifier driver stages, and military/aerospace RF amplification. The MRF19125R5 is a matched-device variant (R5 designation) tuned for use with NXP's reference amplifier circuits at the 1.93 GHz operating point.
When designing with this device, ensure proper impedance matching at both input and output to achieve rated gain and efficiency, and provide adequate heatsinking via the ceramic flange mount. Bias sequencing should follow NXP's recommendations to avoid thermal runaway.
This page synthesizes distributor stock data, parametric drop-in alternatives in the same NI-880 footprint, and practical design notes not found in the manufacturer datasheet alone.
Alternativas directas para MRF19125R5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF19125
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF19125S
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF19125R5
✅ Sustitución directa✓ En stock
$25.2 / unidad
Ver hoja de datos →MRF19030
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF19125R5 Valores máximos y características eléctricas
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Operating Frequency | 1.93 GHz |
| Power Gain | 13.5 dB |
| Output Power (Pout) | 24 W |
| Test Voltage (Vds) | 26 V |
| Test Current (Id) | 1.3 A |
| Drain-Source Voltage Rating (Vdss) | 65 V |
| Encapsulado / Carcasa | NI-880 |
| Supplier Device Package | NI-880 |
| Tipo de montaje | Chassis Mount / Flange Mount |
| Technology | RF Sub-Micron LDMOS |
| Process Line | RF Sub-Micron MOSFET Line |
| Polarity | N-Channel |
| Operating Mode | Enhancement Mode |
| Part Status | Obsolete |
| Manufacturer | NXP USA Inc. (formerly Motorola/Freescale Semiconductor) |
Configuración de pines de MRF19125R5
| Pin 1 | DRAIN — RF output / drain connection (flange) |
| Pin 2 | GATE — RF input / gate bias |
| Pin 3 | SOURCE — Source / ground (flange) |
DC Área de funcionamiento seguro (estimated, typical LDMOS)
Aplicaciones típicas
MRF19125R5 es adecuado para 6 aplicacións: 1.93 GHz ISM Band Power Amplifier, PCS/DCS Base Station Driver Stage, Military/Aerospace RF Amplification, RF Generator / Industrial Heating, Broadcast Auxiliary Link Transmitter, Amateur Radio 1.9-2.0 GHz Amplifier.
1.93 GHz ISM Band Power Amplifier
The MRF19125R5 is purpose-matched for 1.93 GHz industrial-scientific-medical (ISM) band amplifiers, where its 24 W output and 13.5 dB gain provide ample link margin for point-to-point and point-to-multipoint industrial telemetry links. At a 26 V test bias with 1.3 A quiescent current, the part delivers high drain efficiency when matched to NXP's R5 reference network; the NI-880 flange mount allows direct attachment to a chassis heatsink, eliminating the need for an additional thermal spreader in continuous-duty industrial service.
Recomendado
PCS/DCS Base Station Driver Stage
In PCS (1.9 GHz) and DCS (1.8 GHz) base-station transmitter chains, the MRF19125R5 serves as a driver-stage RF power LDMOS delivering 24 W with 13.5 dB gain to feed a higher-power final PA. The 65 V drain breakdown provides robust tolerance to VSWR mismatch, and NXP's RF Sub-Micron LDMOS process provides the linearity required for digital modulation standards (EDGE, CDMA, early UMTS). The NI-880 ceramic flange package is the industry-standard footprint for these base-station driver applications.
Recomendado
Military/Aerospace RF Amplification
The MRF19125R5's 65 V breakdown rating, rugged LDMOS construction, and NXP's heritage military-grade part numbering make it suitable for military and aerospace RF amplification in the 1.93 GHz band, including radar exciter stages and electronic-countermeasure (ECM) subsystems. The device's ability to survive high VSWR conditions and the NI-880 package's robust ceramic-metal flange construction meet MIL-spec environmental requirements when properly qualified at the system level.
Recomendado
RF Generator / Industrial Heating
At 1.93 GHz the MRF19125R5 fits industrial RF generator and plasma/laser excitation applications that demand continuous-wave (CW) power with high reliability. The 24 W output in a ceramic flange package enables compact, fan-cooled RF head designs, while the LDMOS technology's high breakdown voltage ensures long-term reliability against the load mismatches typical of plasma chamber impedance variation. NXP's reference amplifier circuits provide starting points for OEM designers.
Recomendado
Broadcast Auxiliary Link Transmitter
The MRF19125R5 can serve as the final PA in 1.93 GHz STL (studio-to-transmitter) auxiliary link equipment, where 24 W output with 13.5 dB gain delivers reliable line-of-sight link margins for HD audio/video broadcast backhaul. The LDMOS technology's excellent thermal stability under continuous duty and the NI-880 flange's chassis-mount form factor suit outdoor broadcast transmitter enclosures with baseplate cooling.
Recomendado
Amateur Radio 1.9-2.0 GHz Amplifier
Amateur radio operators building high-power amplifiers in the 1.9-2.0 GHz segment can leverage the MRF19125R5's 24 W output and 13.5 dB gain, paired with the NI-880 package's proven heatsinking. Although amateur service does not require formal part qualification, the NXP MRF19125R5's heritage in commercial base-station service gives hobby-grade amplifiers industrial-grade reliability when properly matched and biased.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF19125R5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF19125 | MRF19125S | MRF19125R5 | MRF19030 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880 | NI-880 - same | NI-880 - same | NI-880 - same | NI-880 - same |
| Output Power | 24 W | 24 W | 24 W | 24 W | 30 W |
| Operating Frequency | 1.93 GHz | 1.93 GHz | 1.93 GHz | 1.93 GHz | 2.0 GHz |
| Test Voltage (Vds) | 26 V | 26 V | 26 V | 26 V | 26 V |
| Drain Voltage Rating | 65 V | 65 V | 65 V | 65 V | 65 V |
| Factory Matched (R5) | Yes (1.93 GHz) | No (unmatched base) | Sister variant | Yes (reference) | Different family |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
Diferenciadores clave
- Factory-matched (R5) for 1.93 GHz reference amplifier circuits (frente a MRF19125 (unmatched base))
- Optimized for 1.93 GHz ISM and PCS bands with 13.5 dB gain (frente a MRF19030)
- NXP heritage part with sub-micron LDMOS process (frente a MRF19125S)
Notas de diseño
The NI-880 ceramic flange must be mounted to a chassis heatsink or cold plate with thermal compound (e.g., Wakefield-Vette Type 120 or equivalent) to keep junction temperature below NXP's 200 C maximum rating. At 24 W CW output and ~50% drain efficiency, the MRF19125R5 dissipates roughly 24 W internally; thermal resistance junction-to-flange for NI-880 is approximately 0.9 C/W, so case temperature must remain under 180 C at full power. Use a chassis temperature sensor for thermal protection.
Although the NI-880 is a flange-mount package, the gate and drain leads require a microstrip PCB layout using low-loss RF substrate (Rogers RO4003C, RO4350B, or Arlon AD1000). Keep gate lead traces as short as possible to prevent parasitic oscillation; NXP's reference design typically uses a 5-10 mm gate trace length with 50 ohm microstrip. Add a gate-series ferrite bead and 10-ohm resistor for VHF/UHF oscillation suppression.
Do not exceed 65 V on the drain under any transient condition - use a 56 V TVS diode or clamp circuit on the drain supply. Bias sequencing should turn the gate on AFTER drain voltage is present and turn the gate off BEFORE removing drain voltage, to avoid thermal runaway and device rupture. Always include a gate-source Zener protection network (typically 12-15 V) to prevent ESD damage during handling and assembly.
Place input and output matching networks on opposite sides of the NI-880 package to maximize isolation (>30 dB typical). Use a small copper ground pour surrounding the package mounting screws, stitched with multiple vias to the bottom ground plane. Avoid routing any digital or low-level signal traces near the drain lead, where the high RF voltage can couple into sensitive circuits.
Información de cumplimiento
MRF19125R5 is an obsolete Motorola/Freescale/NXP RF power LDMOS in ceramic NI-880 package. RoHS/REACH compliance status not verified in available web data. AEC-Q100 not applicable (RF power transistor, not automotive qualified).
