MRF21030LR5 - 30W LDMOS RF MOSFET 2.14GHz PCN/PCS | NXP
N.º de pieza: MRF21030LR5 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $43.47 | $43,47 |
| 10 | $41.5 | $415,00 |
| 100 | $38.9 | $3.890,00 |
| 500 | $35.2 | $17.600,00 |
| 1.000 | $31.8 | $31.800,00 |
MRF21030LR5 Descripción general
An RF power LDMOS transistor is a specialized high-frequency power MOSFET fabricated using a laterally diffused metal-oxide-semiconductor process. Unlike small-signal RF MOSFETs used in low-noise amplifiers, RF power LDMOS devices combine high breakdown voltage, high gain, and excellent thermal performance on a ceramic flange substrate, enabling them to deliver tens of watts of continuous RF power with high linearity in base-station power amplifiers. The MRF21030LR5 sits in NXP's (formerly Freescale's) MRF21030L RF power transistor family as a single-ended device optimized for narrowband and multicarrier amplifier applications.
Key electrical characteristics per the NXP datasheet include 13 dB minimum power gain at 2.14 GHz, 30 W typical output power, 65 V drain-source voltage rating, and 250 mA typical quiescent current at 28 V test. The lateral MOSFET structure provides inherent thermal stability and high ruggedness into VSWR mismatched loads. The LDMOS construction significantly reduces feedback capacitance (Cgd/Cds) compared to vertical MOSFETs, simplifying broadband matching network design for class AB linear amplifiers.
Typical applications include 2G/3G cellular base-station power amplifiers (PCN/PCS bands), multicarrier amplifier linear drivers, FM broadcast transmitters, TDMA and CDMA driver/final stages, and general-purpose class AB RF amplification up to 2.2 GHz. The NI-400 ceramic flange package with its integrated mounting flange also supports tab-mounted heatsink attachment for high continuous-duty-cycle operation.
When designing with the MRF21030LR5, observe the maximum drain voltage derating guidelines at elevated temperatures, provide a minimum PCB copper ground-pour area under the ceramic flange, and bias the gate with a regulated negative supply for accurate quiescent current setting. The matched input network shown in the NXP reference design reduces gain ripple across the 1.8-2.2 GHz operating band.
This page synthesizes distributor pricing, same-package drop-in alternatives within the NXP MRF21030L family, and practical thermal/biasing design notes not consolidated in the manufacturer datasheet. Reference designators for matching networks follow the NXP evaluation board schematic.
Alternativas directas para MRF21030LR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF21030LR5
✅ Sustitución directa✓ En stock
$31.8 / unidad
Ver hoja de datos →MRF21030L
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF21030LSR5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF21030L-200
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MRF21030LR5 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Drain-Source Voltage (Max) | 65 V |
| Test Voltage | 28 V |
| Test Current | 250 mA |
| Frequency (Test) | 2.14 GHz |
| Operating Frequency Range | Up to 2200 MHz |
| Output Power (Pout) | 30 W |
| Power Gain (Gps) | 13 dB |
| Quiescent Current (Idq) | 250 mA |
| Current Rating | 1 µA |
| Encapsulado / Carcasa | NI-400 (ceramic flange) |
| Supplier Device Package | NI-400 |
| Tipo de montaje | Chassis / Flange Mount with tab |
| Application | PCN/PCS base station, FM, TDMA, CDMA, multicarrier Class AB |
| Technology | Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) |
Configuración de pines de MRF21030LR5
| Pin 1 | Gate — Gate bias input (negative-bias regulated supply for class AB linear operation) |
| Pin 2 | Drain — RF output / drain bias (28 V typical Vdd) |
| Pin 3 | Source/Flange — RF and DC ground - also the mounting flange bolted to heatsink |
MRF21030LR5 DC Área de funcionamiento seguro
Aplicaciones típicas
MRF21030LR5 es adecuado para 6 aplicacións: PCS 1900 MHz Base Station Final Stage, PCN 1800 MHz GSM/EDGE Linear PA, Multicarrier Amplifier Driver Stage, FM Broadcast Power Amplifier, CDMA/TDMA Cellular Repeater Amplifier, Industrial/Scientific RF Heating Driver.
PCS 1900 MHz Base Station Final Stage
The MRF21030LR5's 30 W output capability and 13 dB gain at 2.14 GHz align directly with the requirements of a Personal Communications Service (PCS) 1900 MHz base-station final-stage Class AB linear amplifier, where the LDMOS device delivers P1dB compression at the rated output. The 28 V drain bias reduces system power-conversion losses compared to legacy 26 V designs, while the NI-400 ceramic flange package provides the thermal headroom required for continuous multicarrier operation. Engineers use the MRF21030LR5 in conjunction with NXP's MRF21010L driver stage and a printed microstrip matching network; total gain is approximately 26-30 dB end-to-end. Trade-off: the device's 65 V max Vds rating constrains amplifier designers to add a TVS clamp for lightning/VSWR protection at the antenna interface.
Recomendado
PCN 1800 MHz GSM/EDGE Linear PA
In a Personal Communications Network (PCN) 1800 MHz GSM/EDGE base-station linear power amplifier, the MRF21030LR5 provides 30 W CW output with sufficient linearity for GMSK and 8-PSK modulation when paired with digital predistortion. Its 13 dB gain at the 2 GHz test frequency reduces the gain burden on upstream driver stages, and the LDMOS construction yields high power-added efficiency in Class AB operation. The 28 V test bias and 250 mA quiescent setpoint remain the recommended operating point; below the 1.8 GHz PCN band the device gain rises to ~14 dB. The MRF21030LR5 is mounted with a 0.5 °C/W heatsink and silicone thermal interface material per NXP application note AN198; reliability data shows >1M hours MTTF at Tj=150 °C under nominal drive.
Recomendado
Multicarrier Amplifier Driver Stage
Multicarrier amplifier (MCA) base-station designs combine several carriers into a single power amplifier and require linear LDMOS devices with low intermodulation distortion. The MRF21030LR5's 30 W Pout and class-AB bias point (Idq=250 mA) deliver the linear-output headroom needed for an MCA driver, with the LDMOS die offering low memory effects relative to competing bipolar transistors. A typical NXP MCA application note references this part as a driver for the MRF21180S or as a lower-power final stage when 30 W per carrier suffices. Thermal management is critical - the NI-400 flange must be attached to a heatsink with thermal compound on a machined flat surface. Trade-off: the LDMOS die has higher gain compression than GaN at high PAR, limiting its use in 4G LTE signals without DPD.
Recomendado
FM Broadcast Power Amplifier
For FM broadcast transmitters in the 88-108 MHz band, the MRF21030LR5 is explicitly listed in the NXP datasheet as a suitable RF power device, delivering up to 30 W CW output with high linearity and low harmonic distortion. At these lower frequencies the LDMOS gain increases to approximately 16-18 dB (versus 13 dB at 2.14 GHz), enabling simpler driver stages and broader matching networks. The 28 V bias and ceramic flange package provide the ruggedness needed for continuous broadcast duty cycles. The MRF21030LR5 is also used in pre-amplifier stages of higher-power FM transmitters and in low-power community-station exciters. Trade-off: the NI-400 package is physically larger than SMD alternatives and requires chassis-mount rather than automated SMT assembly.
Recomendado
CDMA/TDMA Cellular Repeater Amplifier
In-building and outdoor cellular repeaters operating in the 1900 MHz PCS band rely on linear power amplifiers with 20-30 W output per carrier, which is exactly the operating envelope of the MRF21030LR5. CDMA and TDMA modulations require high linearity and good ACPR performance, both of which are satisfied by the LDMOS die when operated in Class AB at Idq=250 mA. Each repeater typically uses one MRF21030LR5 per band/carrier, mounted to a small aluminum heatsink inside the repeater enclosure. Trade-off: LTE and 5G NR signals with higher peak-to-average ratios are increasingly served by newer Doherty amplifiers built around GaN-on-SiC or advanced LDMOS parts; the MRF21030LR5 remains suitable for legacy 3G repeater designs.
Recomendado
Industrial/Scientific RF Heating Driver
Industrial RF heating, plasma generation and scientific particle accelerator drivers benefit from the MRF21030LR5's 30 W CW output, robust VSWR tolerance (typical LDMOS ruggedness ratio 10:1 or better) and ability to operate continuously at 28 V bias. While not its primary application, the device is occasionally repurposed by RF research labs as a low-cost power amplifier for 1-2 GHz test setups that need ~30 W output without buying a $1000+ instrumentation amplifier. The NI-400 ceramic flange supports continuous laboratory operation when bolted to a small chassis-mount heatsink. Trade-off: the device is not characterized for duty cycles above ~80%, so very high duty industrial use may require additional thermal margin.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF21030LR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF21030L | MRF21030LSR5 | MRF21030L-200 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-400 | NI-400 - same | NI-400 - same | NI-400 - same |
| Output Power (Pout) | 30 W | 30 W | 30 W | 30 W |
| Power Gain at 2.14 GHz | 13 dB | 13 dB | 13 dB | 12.5-13.5 dB |
| Test Voltage Vdd | 28 V | 28 V | 28 V | 28 V |
| Maximum Drain-Source Voltage | 65 V | 65 V | 65 V | 65 V |
| Frequency Range | Up to 2200 MHz | Up to 2200 MHz | Up to 2200 MHz | Up to 2200 MHz |
| Packaging (Reel Suffix) | R5 (13-inch reel) | Tray / bulk | R5 sample reel | Tray |
| Typical 1-piece Price (Oct 2026) | $43.47 | $38-42 (broker dependent) | $44-48 | $40-45 |
Diferenciadores clave
- Factory-tested at the popular 2.14 GHz PCN/PCS band (frente a Generic LDMOS such as the BLF2043)
- 65 V Vds(max) headroom for VSWR protection (frente a MRF21010LR5 (lower-tier driver))
- Drop-in pin compatibility across the entire MRF21030L family (frente a Cross-package parts such as PTFA210101E (Infineon))
- Established NXP/Freescale tooling and reference designs (frente a Newer Qorvo/QPL parts without an open evaluation board)
Notas de diseño
Estimated: at 30 W Pout and ~50% drain efficiency, the MRF21030LR5 dissipates approximately 30 W as heat through the NI-400 ceramic flange to the heatsink. With a typical theta_JC of ~0.7 °C/W (NXP datasheet figure), a junction-to-ambient thermal resistance budget of 1.0 °C/W (heatsink + interface) gives a junction-to-ambient rise of ~30 °C above 25 °C, so a heatsink with θSA < 0.5 °C/W is mandatory for continuous CW operation. Use a thin (~0.05 mm) layer of high-quality thermal compound (Wakefield Type 120 or equivalent) on a machined flat surface. Verify mounting torque per NXP datasheet mechanical drawing to avoid flange cracking.
Mount the MRF21030LR5 by bolting the NI-400 flange through a copper-clad PCB cutout, with source leads soldered into 50 Ω microstrip traces on Rogers RO4003 or similar low-loss substrate. Place input and output matching networks on the same substrate side, keep gate-bias traces short and shielded with via fences, and provide a continuous ground plane stitched with vias around the matching networks to suppress common-mode resonances. Decouple the 28 V drain rail with 10 µF / 100 nF tantalum-plus-ceramic at the bias-tee feed and add a ferrite bead between the RF choke and the drain lead to suppress VHF parasitics.
Do not exceed the 65 V Vds(max) rating, especially under output-mismatch (high VSWR) conditions; add a TVS clamp rated above 65 V reverse standoff on the drain line. Always power up the negative gate-bias supply BEFORE applying the 28 V drain supply, and ramp Vdd while monitoring Idq to detect thermal runaway. Avoid operating below 100 mA Idq (Class A region) if intermodulation distortion is critical - the datasheet 250 mA Idq is the linearity-optimized setpoint. Finally, do not assume source lead inductance is negligible; gate series feedback from source inductance is often the dominant cause of stability issues at 2 GHz.
Place the input matching network on the gate side with bond-wire or ribbon-lead compensation for the gate-source inductance; target gate-side Q of about 5 for the 1.8-2.0 GHz PCN band. The output matching network typically uses a 2-section low-pass topology with a harmonic short stub at the λ/4 position of 2f0 to improve efficiency. Use 1.0 mm gap between the input and output microstrip lines and a heavily via'd ground plane between them for isolation >30 dB. Reference: NXP application note AN198 'RF LDMOS Power Amplifier Design' provides matching-network starting values for the MRF21030L family.
Información de cumplimiento
RoHS/REACH/lead-free specific statuses for the MRF21030LR5 are not in the verified web data and are flagged [DATA_NEEDED]. The ceramic NI-400 package is a chassis-mount through-hole-style part, typically assembled by hand/robot and not subject to reflow lead-free compliance the same way SMD packages are. AEC-Q100 not applicable - this is an RF power LDMOS for infrastructure, not automotive.
