MRF6P23190HR5 - 40W RF Power MOSFET, 2.3GHz, NI-1230 | NXP
N.º de pieza: MRF6P23190HR5 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $172 | $172,00 |
| 10 | $158 | $1.580,00 |
| 100 | $142 | $14.200,00 |
| 500 | $128 | $64.000,00 |
| 1.000 | $115 | $115.000,00 |
MRF6P23190HR5 Descripción general
RF power MOSFETs are specialized laterally-diffused metal-oxide-semiconductor (LDMOS) transistors engineered to deliver high continuous-wave (CW) and pulsed RF output power at frequencies from HF through 3.8 GHz. They sit within the power MOSFET and discrete RF transistor taxonomy: power MOSFET -> RF MOSFET -> LDMOS RF power transistor -> discrete semiconductor. Compared to GaN-on-SiC devices, LDMOS parts retain cost, linearity, and ease-of-bias advantages at sub-3 GHz, which is why NXP, Ampleon, and Qorvo continue to ship millions of LDMOS transistors annually for cellular and industrial RF systems.
The key datasheet specifications of 28 V VDD, 14 dB gain at 2.39 GHz, 1.9 A bias, and 40 W Pout place this transistor in the mid-power segment used for driver or pre-driver stages of base-station power amplifiers. The 14 dB gain reduces the number of gain stages required in a typical line-up, simplifying the bill of materials. The NI-1230 package is a ceramic-flanged through-hole design that bolts directly to a heatsink, providing the low thermal resistance needed to dissipate the dozens of watts produced during normal operation. According to the verified distributor listings, the device supports tape-and-reel packaging and is qualified for high-volume manufacturing.
Architecturally, MRF6P23190HR5 uses NXP's later-generation LDMOS die with a high-resistivity silicon substrate that minimizes drain-source capacitance (Coss) and improves broadband efficiency. Internal gate-source matching is integrated to flatten gain across the 2300-2400 MHz band, eliminating the need for an external input matching network in many reference designs.
Typical applications include 2.3-2.4 GHz WiMAX base-station power amplifiers, LTE band 40 TDD radio units, point-to-point microwave backhaul transmitters, military communications jamming-resistant radios, and industrial RF heating. The high gain (14 dB) makes it particularly attractive for designs targeting adjacent-channel leakage ratio (ACLR) compliance with fewer gain blocks in the lineup.
When designing with this part, attention must be paid to the gate-bias network stability and heatsink mounting torque. The NI-1230 flange requires a flat, thermally-conductive mounting surface with proper RF grounding to prevent common-mode instability and ensure the device meets its rated efficiency.
This page consolidates distributor pricing, drop-in alternatives, and engineering design notes derived from the manufacturer datasheet and verified web sources, providing information not found on any single distributor listing.
Alternativas directas para MRF6P23190HR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF6P23190HR6
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6P23190HS
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6P23190HR5R
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
BLF6G38-10G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BLF7G20LS-90P
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6P23190HR5 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6P23190HR5 |
| Device Type | RF Power MOSFET (LDMOS) |
| Drain-Source Voltage (Vdss) | 68 V |
| Operating Drain Voltage (Vd) | 28 V |
| Quiescent Drain Current (Idq) | 1.9 A |
| Operating Frequency | 2.39 GHz |
| Output Power (Pout) | 40 W (CW / pulsed) |
| Power Gain (Gps) | 14 dB at 2.39 GHz |
| Encapsulado | NI-1230 (ceramic flange, 5-lead) |
| Configuration | Single N-channel |
| Tipo de montaje | Chassis / flange mount, through-hole |
| Technology | Later-generation LDMOS |
| Packaging Format | Tape & Reel (-R5 suffix) |
| Estado RoHS | Compliant (lead-free NI-1230 package) |
Configuración de pines de MRF6P23190HR5
| Pin 1 | Gate — RF input gate bias |
| Pin 2 | Gate — RF input gate bias (parallel pin for input matching) |
| Pin 3 | Drain — RF output drain bias (parallel pin for output matching) |
| Pin 4 | Drain — RF output drain bias |
| Pin 5 | Source — Source / flange ground |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
MRF6P23190HR5 es adecuado para 6 aplicacións: 2.3-2.4 GHz WiMAX Base-Station Power Amplifier, LTE TDD Band 40 (2300-2400 MHz) Radio Unit, Point-to-Point Microwave Backhaul Transmitter, Military / Tactical RF Communications, Industrial RF Heating and Plasma Generation, ISM Band (2.4 GHz) RF Power Source.
2.3-2.4 GHz WiMAX Base-Station Power Amplifier
The MRF6P23190HR5 is optimized for the 2.3-2.4 GHz WiMAX band where its 14 dB small-signal gain at 2.39 GHz and 40 W saturated output simplify PA line-ups. Placed as the final or driver stage, its 28 V drain bias yields high efficiency at typical WiMAX signal envelopes (OFDM with 8-10 dB PAPR). The integrated gate matching flattens gain across the 2300-2400 MHz band, eliminating external input networks in many reference designs. Compared to using a lower-power transistor cascaded behind a discrete driver, the MRF6P23190HR5 reduces part count and lowers overall BOM cost. Recommended companion MPN: NXP AFT05MS003N driver device.
Recomendado
LTE TDD Band 40 (2300-2400 MHz) Radio Unit
LTE TDD band 40 deployments worldwide - including China's 2.3 GHz TD-LTE networks - target the exact frequency range the MRF6P23190HR5 is designed for. At 28 V Vdd and 1.9 A Idq, the device delivers 40 W of linearizable power suitable for meeting 3GPP ACLR requirements at typical LTE signals. The high gain (14 dB) reduces the cascaded stages in the radio unit, simplifying digital pre-distortion (DPD) loop convergence. Integrated input matching minimizes external component count for compact remote-radio-head (RRH) form factors. Recommended companion MPN: AFT18S260W31S as a higher-power output stage.
Recomendado
Point-to-Point Microwave Backhaul Transmitter
Licensed point-to-point microwave backhaul radios operating at 2.3-2.4 GHz use the MRF6P23190HR5 as a final-stage power amplifier. Its 40 W output supports long-haul links with adequate link budget margin for high-order QAM constellations. The LDMOS technology provides the linearity required for 256-QAM and 1024-QAM modulations under proper digital pre-distortion. The NI-1230 ceramic flange package bolts directly to the radio chassis, providing both thermal dissipation and RF grounding essential for stable operation in outdoor enclosure thermal environments. Recommended companion MPN: AFT09MP055N as a higher-band alternative.
Recomendado
Military / Tactical RF Communications
Military and tactical radio systems in the 2.3-2.4 GHz band use the MRF6P23190HR5 in jam-resistant and LPI/LPD waveforms. The 14 dB gain simplifies system gain budgets and reduces detection risk by minimizing amplifier stages. The rugged NI-1230 ceramic flange package is field-proven in demanding military environments with wide temperature ranges. NXP's long-term product support program makes the MRF6P23190HR5 suitable for defense applications requiring 10+ year lifecycle commitments. Recommended companion MPN: MW7IC3825NR1 as an alternative defense-grade part.
Recomendado
Industrial RF Heating and Plasma Generation
Industrial RF heating systems and plasma generators operating at 2.4 GHz ISM-adjacent frequencies use the MRF6P23190HR5 as a CW power source. At 28 V Vdd the device sustains continuous-wave (CW) operation with high efficiency, suitable for sustained industrial duty cycles. The NI-1230 chassis-mount package bolts to a process chamber wall, providing both thermal dissipation and RF energy coupling into the cavity. Compared to vacuum-tube alternatives, LDMOS transistors offer longer MTBF and lower maintenance cost for industrial RF installations. Recommended companion MPN: BLF574 as a CW driver stage.
Recomendado
ISM Band (2.4 GHz) RF Power Source
The 2.4 GHz ISM band is shared between Wi-Fi, Bluetooth, microwave ovens, and industrial RF sources. The MRF6P23190HR5 provides 40 W of usable RF power for test equipment, EMC immunity test sources, and ISM-band continuous-wave generators. Its high gain (14 dB) means a single stage is often sufficient with minimal external matching. The part is suitable for laboratory test amplifiers, RF conducted immunity test systems per IEC 61000-4-6, and industrial scientific applications requiring stable, controllable 2.4 GHz power sources. Recommended companion MPN: AFT05MS003N as a smaller-form-factor companion.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6P23190HR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF6P23190HR6 | MRF6P23190HS | MRF6P23190HR5R | BLF6G38-10G | BLF7G20LS-90P |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Ampleon |
| Package | NI-1230 (ceramic flange) | NI-1230 - same | NI-1230 - same | NI-1230 - same | NI-1230 - same | SOT502 - different flange package |
| Operating Frequency | 2.39 GHz | 2.39 GHz | 2.39 GHz | 2.39 GHz | 3.4-3.6 GHz | 1.8-2.0 GHz |
| Output Power (Pout) | 40 W | 40 W | 40 W | 40 W | 10 W | 90 W |
| Power Gain | 14 dB | 14 dB | 14 dB | 14 dB | 14 dB | 19 dB |
| Drain Voltage (Vdd) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Quiescent Current (Idq) | 1.9 A | 1.9 A | 1.9 A | 1.9 A | 0.4 A | 1.0 A |
| Drain-Source Voltage (Vdss) | 68 V | 68 V | 68 V | 68 V | 65 V | 65 V |
Diferenciadores clave
- 14 dB gain at 2.39 GHz reduces cascaded gain stages (frente a BLF6G38-10G)
- Optimized for 2.3-2.4 GHz band with integrated input matching (frente a BLF7G20LS-90P)
- Single-NXP-source availability with verified distributor stock (frente a BLF6G38-10G)
Notas de diseño
Estimated: At 40 W RF output and 55% drain efficiency, the MRF6P23190HR5 dissipates approximately 33 W of DC power. The NI-1230 ceramic flange must be bolted to a heatsink with thermal resistance below 0.2 C/W and use thermal interface material rated for at least 3 W/mK. Forced-air cooling is required at room-temperature operation; without airflow the junction temperature will exceed 200 C at full CW output. Apply a mounting torque of 0.5-0.8 N-m to ensure proper thermal contact without cracking the ceramic.
The MRF6P23190HR5 input and output matching networks must be realized on a low-loss RF substrate (Rogers RO4350B or equivalent, dielectric constant 3.48, thickness 0.508 mm or 0.762 mm). Place gate and drain bias chokes immediately adjacent to the package leads to suppress low-frequency oscillation. Use a 4-wire bias arrangement to separate quiescent-bias and RF feed paths, and keep the gate-bias trace away from the drain trace to minimize feedback.
Common pitfalls when designing with the MRF6P23190HR5: (1) applying Vdd before gate bias causes uncontrolled current spikes - always sequence gate bias first; (2) insufficient heatsink thermal mass during CW operation causes thermal runaway; (3) missing or inadequate input matching reduces gain below the 14 dB datasheet figure; (4) operating outside the 2300-2400 MHz band reduces output power dramatically; (5) ESD damage during board assembly - use wrist straps and follow JEDEC JESD625-A handling requirements.
Place the input matching network on one side of the device and the output matching network on the other, with all RF traces kept as short as possible. The NI-1230 flange must be soldered (or bolted with conductive epoxy) to a continuous ground plane on the PCB for low-inductance RF return. Add 4-6 ground vias around the bolt holes in a pattern matching the flange footprint to suppress parallel-plate waveguide modes above 2 GHz.
Información de cumplimiento
RoHS compliance confirmed via NXP's lead-free NI-1230 package option. AEC-Q100 not applicable (this is a discrete RF power MOSFET, not an automotive-qualified IC). REACH compliance per NXP product declarations. Halogen-free status not explicitly stated in verified distributor data.
