MRF6S19060NR1 - 12W RF LDMOS 1930-1990MHz N-CDMA | NXP
N.º de pieza: MRF6S19060NR1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $35.2 | $352,00 |
| 100 | $31.85 | $3.185,00 |
| 500 | $28.4 | $14.200,00 |
| 1.000 | $25.1 | $25.100,00 |
MRF6S19060NR1 Descripción general
An RF power MOSFET (LDMOS) is a lateral double-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power RF amplification. Within the power management taxonomy, it sits under RF power transistors -> discrete semiconductors -> semiconductor devices. LDMOS technology has become the dominant RF power amplifier architecture for sub-3 GHz wireless infrastructure because it offers high gain, high efficiency, and excellent linearity at high breakdown voltages compared to bipolar or GaAs alternatives.
Key features of the MRF6S19060NR1 include 16 dB typical power gain at 1.93 GHz, support for two-carrier N-CDMA modulation with multicarrier drive capability, an integrated ESD protection structure, and a wide-band 1930-1990 MHz operating range. The TO-270 WB-4 ceramic-equivalent plastic package provides low thermal resistance and high RF isolation, with two source leads and two drain leads plus a gate lead to support push-pull or single-ended configurations.
The device uses NXP's sixth-generation LDMOS process, which delivers high drain efficiency (>30% at P3dB) and excellent ACPR (adjacent channel power ratio) for linear amplification of digitally modulated signals such as WCDMA, TD-SCDMA, and LTE. The lateral structure inherent to LDMOS simplifies paralleling multiple dies for higher output power and reduces source inductance, critical for UHF and microwave operation where every nanohenry of lead inductance degrades gain and stability.
Typical applications include N-CDMA/CDMA2000 base station driver and final-stage PAs in the PCS 1900 MHz band, WLL (wireless local loop) infrastructure amplifiers, multicarrier cellular repeaters, TDMA amplifier circuits, and general purpose 2 GHz industrial/scientific RF amplifiers requiring 10-20 W average power.
When designing with the MRF6S19060NR1, ensure proper gate-bias sequencing (gate voltage applied before drain voltage) and adequate heatsinking. The device's high gain means that a single-stage design can replace earlier two-stage driver chains, but stability analysis with the chosen matching network is essential because the 16 dB gain at UHF can easily produce parasitic oscillations above the operating band.
This page synthesizes distributor pricing snapshots, drop-in cross-reference information, and practical design notes drawn from real RF PA reference designs - content not found in the manufacturer datasheet alone.
Alternativas directas para MRF6S19060NR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF6S19060NR1 (mismo factor de forma y huella) — difiere en Package, Technology, Transistor Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF6S19060NBR1
✅ Sustitución directa✓ En stock
$28.9 / unidad
Ver hoja de datos →MRF6S19060MR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6S19100MR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8S19060MR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AFT18S230W
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6S19060NR1 Valores máximos y características eléctricas
| Tipo de transistor | N-Channel LDMOS (RF Power) |
| Technology | Lateral MOSFET, Enhancement Mode |
| Drain-to-Source Voltage (V DSS) | 68 V |
| Operating Drain Voltage (Test) | 28 V |
| Output Power (P AVG, N-CDMA) | 12 W average |
| Frequency Range | 1930 MHz to 1990 MHz |
| Test Frequency | 1.93 GHz |
| Power Gain (Gps) at Test | 16 dB typical |
| Drain Efficiency | >30% typical at P3dB |
| Test Quiescent Current (I DQ) | 610 mA |
| Encapsulado | TO-270 WB-4 (4-lead over-molded plastic) |
| Tipo de montaje | Surface Mount |
| Lead Free / RoHS | Lead Free (per Freescale datasheet) |
| Application | N-CDMA, WCDMA, TDMA, CDMA base station amplifiers |
Configuración de pines de MRF6S19060NR1
| Pin 1 | Drain — Drain connection (high-current RF output, tied to thermal flag area) |
| Pin 2 | Gate — Gate connection (DC bias input; sequence ON before drain) |
| Pin 3 | Source — Source lead (RF ground, low-inductance) |
| Pin 4 | Source — Source lead (RF ground, second low-inductance tab) |
Área de funcionamiento seguro (MRF6S19060NR1)
Aplicaciones típicas
MRF6S19060NR1 es adecuado para 6 aplicacións: N-CDMA PCS Base Station Final-Stage PA, WCDMA / TD-SCDMA Repeater and Microcell Driver, Multicarrier GSM/EDGE Power Amplifier, Wireless Local Loop (WLL) Base Station Driver, Industrial 2 GHz Microwave Transmitter, Cellular Repeater / DAS Head-End Amplifier.
N-CDMA PCS Base Station Final-Stage PA
The MRF6S19060NR1's 12 W average N-CDMA rating and 16 dB gain at 1.93 GHz make it well suited for the final power amplifier stage in 1900 MHz PCS cellular base stations, where linearity and ACPR compliance dominate the design budget. With 28 V drain bias and 610 mA quiescent current the device operates Class AB with >30% drain efficiency, reducing heat-sink mass versus older 2-stage drivers. The lateral N-channel LDMOS process inherent to this part provides the ruggedness needed for full-reflection VSWR mismatches typical of duplexed antenna loads. The TO-270 WB-4 package exposes the source to two low-inductance leads, which engineers exploit for stable operation at UHF.
Recomendado
WCDMA / TD-SCDMA Repeater and Microcell Driver
The 1930-1990 MHz coverage of the MRF6S19060NR1 maps directly onto the UMTS-FDD downlink band, allowing it to drive the final stage of small-cell, picocell, and repeater power amplifiers where 5-15 W average output is typical. The 16 dB power gain collapses a transmitter chain by one stage relative to older 10 dB gain LDMOS, reducing PCB real estate and BOM cost. Class AB linearity at the 610 mA bias point supports the 3GPP ACPR mask for WCDMA without predistortion at output powers up to ~8 W average. Designers add a small attenuator pad at the input to flatten gain versus frequency when used as a broadband driver.
Recomendado
Multicarrier GSM/EDGE Power Amplifier
Multicarrier amplifier (MCPA) designs in the 1900 MHz band use the MRF6S19060NR1 because the LDMOS large-signal behavior remains well controlled with two or three simultaneous modulated carriers. At 28 V with proper output matching the device preserves ACPR across the multicarrier composite power, easing the burden on digital predistortion. The 16 dB gain allows a small-signal MMIC or GaAs pre-driver to feed the part directly. Compared to a single-carrier amplifier the MRF6S19060NR1's heatsink must absorb extra dissipation from intermodulation distortion, which is straightforward given the low thermal resistance of TO-270 WB-4 mounting.
Recomendado
Wireless Local Loop (WLL) Base Station Driver
Fixed-wireless and WLL equipment operating in the PCS 1900 MHz block deploys the MRF6S19060NR1 as the final-stage driver for subscriber-side base stations targeting 5-10 km coverage cells. The part's 12 W saturated output comfortably satisfies typical WLL link budgets after combining loss and antenna gain. Because WLL base stations operate from -48 V backhaul with intermediate DC-DC conversion to 28 V, the part integrates cleanly into existing Freescale/NXP evaluation board layouts and avoids the higher supply rails required by 50 V LDMOS families. Thermal management with natural convection is feasible in outdoor enclosures at moderate ambient.
Recomendado
Industrial 2 GHz Microwave Transmitter
Industrial heating, drying, and plasma-generation equipment operating in the 1.93 GHz ISM-adjacent band use the MRF6S19060NR1 as a continuous-wave final-stage amplifier where its ruggedness and broadband stability match the application requirements. The 16 dB gain with 28 V bias permits a single-stage design replacing earlier two-stage amplifier chains, reducing tuning complexity. The TO-270 WB-4's two source leads lend themselves to grounding schemes that protect the device from load mismatches common in industrial microwave cavities. Designers value the part's tolerance to overdrive during plasma ignition, a condition where antenna VSWR briefly spikes well beyond 3:1.
Recomendado
Cellular Repeater / DAS Head-End Amplifier
Distributed antenna system head-ends and indoor cellular repeaters operating in the 1930-1990 MHz downlink block commonly deploy the MRF6S19060NR1 in a final amplification stage rated for 1-10 W composite output. The 12 W average envelope allows DAS operators to drive several remote antenna units from a single head-end, reducing system capex. The part's 28 V bias and class-AB linearity satisfy the 3GPP spectral mask without extensive linearization, simplifying the overall repeater DSP design. Because DAS head-ends are often rack-mounted indoors, the heatsink geometry offered by the TO-270 WB-4 simplifies thermal integration.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6S19060NR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF6S19060NBR1 | MRF6S19060MR1 | MRF6S19100MR1 | MRF8S19060MR1 | AFT18S230W |
|---|---|---|---|---|---|---|
| Package | TO-270 WB-4 | TO-270 WB-4 (same) | TO-270 WB-4 (same) | TO-270 WB-4 (same) | TO-270 WB-4 (same) | TO-270 WB-4 (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1805-1880 MHz |
| Output Power (Avg) | 12 W | 12 W | 12 W | 12 W (higher pulsed available) | 12 W (newer gen) | 50 W |
| Power Gain at Test | 16 dB | 16 dB | 16 dB | 16 dB | 17 dB | 17 dB |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Breakdown (V DSS) | 68 V | 68 V | 68 V | 68 V | 68 V | 68 V |
| Approx. Unit Price (qty 1) | $38.50 | $38.50 | $36.00 | $55.00 | $42.00 | $65.00 |
| Lifecycle Status | Active | Active | Active | Active | Active | Active |
Diferenciadores clave
- Sixth-generation LDMOS with proven PCS-band linearity (frente a MRF6S27015GNR1)
- Drop-in TO-270 WB-4 footprint matches whole MRF6S19060 family (frente a MRF6S19060NBR1)
- Higher power available in same footprint at moderate cost premium (frente a MRF6S19100MR1)
Notas de diseño
Estimated: at 12 W average RF output and ~30% drain efficiency the part dissipates roughly 28 W DC. The TO-270 WB-4 junction-to-case thermal resistance is approximately 0.6 C/W - combined with heatsink thermal resistance this must remain below ~6 C/W to keep junction rise below 175 C. Apply thermal interface material of 0.1 C/W or less between the package back and the heatsink, and torque/tape mount per the datasheet mechanical drawing to avoid thermal-gap voids.
Always sequence gate bias on BEFORE applying drain voltage. The MRF6S19060NR1's enhancement-mode LDMOS structure with no internal gate protection will pass uncontrolled current if the drain is energized first, frequently destroying the die. Use a sequenced bias supply or gate clamping network. Do not exceed the 68 V V DSS absolute maximum, including any transient overshoot from the drain feed choke ringing.
The TO-270 WB-4 source leads must be grounded with the shortest possible PCB via pattern - typically four or six vias per source tab stitched immediately under the lead footprint. Use Rogers RO4350B or similar low-loss substrate (DK 3.5, df 0.0037) at 1.93 GHz to minimize dielectric loss. Keep the gate and drain microstrip traces 50 ohm controlled impedance and place DC blocking caps within 5 mm of the package leads to avoid sub-band oscillations.
With 16 dB gain at UHF, the MRF6S19060NR1 will oscillate parasitically above the operating band if the output matching network does not present a low-loss path at the parasitic resonance (typically 4-7 GHz). Add a parallel RC snubber (typically 50 ohm + 8 pF) at the drain feed or use a lossy ferrite bead on the drain supply lead to suppress common-mode instability. Stability analysis at small-signal S-parameter level is strongly recommended before finalizing the matching network.
Información de cumplimiento
RoHS compliant and lead free per Freescale/NXP datasheet. REACH compliance follows standard NXP corporate statements. AEC-Q100 is not applicable - this part is intended for cellular infrastructure, not automotive electronics.
