MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP
N.º de pieza: MRF6V14300HSR5 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $245 | $245,00 |
| 10 | $220 | $2.200,00 |
| 100 | $195 | $19.500,00 |
| 250 | $178 | $44.500,00 |
| 500 | $162 | $81.000,00 |
MRF6V14300HSR5 Descripción general
A power RF MOSFET is a specialized lateral double-diffused metal-oxide-semiconductor transistor built on a silicon substrate and engineered for high-frequency, high-power signal amplification. Within the broader taxonomy it sits under RF power transistor -> RF MOSFET -> discrete RF semiconductor -> power management device. LDMOS technology dominates sub-GHz to roughly 3 GHz pulsed applications because of its high breakdown voltage, simple gate biasing and excellent ruggedness into severe output mismatch, and the MRF6V14300HSR5 belongs to NXP's VHV6 (Very High Voltage, 6th generation) family optimized for pulsed avionics and radar duty.
Key features include a 50 V drain-source operating voltage with a 100 V breakdown rating, 330 W peak output power at 1.4 GHz, 18 dB typical power gain, pulsed duty cycle support from 1% to 12%, and integrated ESD protection. The NI-780S package provides low thermal resistance and is compatible with NXP's broader 50 V LDMOS pulsed lineup, simplifying PCB reuse. The device is specified for 1.4 GHz pulsed operation, aligning it with long-range primary surveillance, air-traffic-control and weather-radar transmitter chains.
The architecture is a laterally diffused N-channel MOSFET on a high-resistivity silicon substrate, with an integrated gate-source ESD diode. Source vias are connected through the package backside for low-inductance grounding, while the gate is DC-biased through a bias-tee network. The 50 V rail provides headroom for high-power pulses while keeping average dissipation manageable for pulsed service.
Typical applications include L-band pulsed radar transmitters (1200-1400 MHz), secondary surveillance radar transponders, air-traffic-control and weather-radar final stages, avionics DME/TACAN power amplifiers, and pulsed RF signal generators. Its 18 dB gain at 1.4 GHz makes it well suited as a final or driver stage where high gain reduces chain complexity.
A key design consideration is thermal management at peak power. At 330 W peak with a typical 10% duty cycle the average dissipation is much lower than continuous rating, but the design must still provide adequate heatsinking, good PCB thermal vias, and bias sequencing to avoid in-rush current. Use a 50 V nominal supply and ensure gate bias is applied before drain voltage to prevent uncontrolled current spikes.
This page synthesizes NXP datasheet parameters, distributor stock, application-stage pairing recommendations, and design notes not found in the original datasheet, giving the design engineer a practical reference alongside the manufacturer's specifications.
Alternativas directas para MRF6V14300HSR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF6V14300HSR5 (mismo factor de forma y huella) — difiere en Duty Cycle, Mounting Type, Transistor Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF6V14300HR5
✅ Sustitución directa✓ En stock
$184.2 / unidad
Ver hoja de datos →MRF6V14300HR3
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MRF6V14300HSR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6V14300H
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MRF6V14300HGN
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF6V14300HSR5 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS, N-Channel, RF Power |
| Technology | Lateral N-Channel MOSFET (LDMOS) |
| Family | VHV6 (Very High Voltage, 6th generation) |
| Drain-Source Voltage (Vds) Rated | 100 V |
| Operating Drain Voltage (Test) | 50 V |
| Operating Frequency Range | 1200 MHz to 1400 MHz |
| Typical Test Frequency | 1.4 GHz |
| Peak Output Power | 330 W (pulsed) |
| Typical Power Gain | 18 dB at 1.4 GHz |
| Quiescent Current (Idq) | 150 mA |
| Duty Cycle | 1% to 12% (pulsed) |
| Encapsulado | NI-780S (SOT1793), 3-pin ceramic |
| Tipo de montaje | Surface Mount / Flange Mount |
| Lead Free Status | Lead Free (per NXP product page) |
| Estado RoHS | Compliant |
Configuración de pines de MRF6V14300HSR5
| Pin 1 | Gate — Gate bias input; DC-biased through bias-tee network, apply Vgs before Vdd |
| Pin 2 | Drain — Drain RF output and DC supply input (50 V nominal, through matching network) |
| Pin 3 | Source — Source RF/DC ground; also connected to package flange for low-inductance grounding |
Área de funcionamiento seguro (Pulsed, 1-12% duty cycle)
Aplicaciones típicas
MRF6V14300HSR5 es adecuado para 6 aplicacións: L-Band Pulsed Radar Transmitter Final Stage, Secondary Surveillance Radar (SSR) Transponder, Air-Traffic-Control and Weather Radar Power Amplifier, Avionics DME / TACAN Final Amplifier, Pulsed RF Signal Generator / Test Amplifier, Industrial Pulsed RF Heating / Drying.
L-Band Pulsed Radar Transmitter Final Stage
The MRF6V14300HSR5 is a natural fit for the final PA stage of an L-band pulsed radar transmitter operating between 1200 and 1400 MHz. Its 330 W peak output capability at 1.4 GHz, combined with 18 dB typical gain, allows the radar designer to drive a final stage directly from a single lower-power driver without cascading multiple gain blocks. The 1% to 12% duty cycle rating matches typical pulsed-radar envelopes where the average power remains low enough to keep thermal stress manageable on the NI-780S flange. The 50 V drain bias provides enough headroom for high peak voltage swings while staying below the 100 V breakdown rating, leaving margin for load-mismatch transients. In a typical chain the MRF6V14300HSR5 follows an LDMOS driver and feeds a circulator plus T/R switch for transmit/receive isolation.
Recomendado
Secondary Surveillance Radar (SSR) Transponder
Secondary surveillance radar transponders interrogate aircraft transponders at 1030 MHz and receive replies near 1090 MHz, with adjacent L-band pulsed service. The MRF6V14300HSR5's 1200-1400 MHz band covers the L-band interrogation RF chain where high peak power pulses are needed to ensure reliable aircraft uplink at long range. Its 18 dB gain at 1.4 GHz reduces the number of driver stages, simplifying the SSR ground-station final amplifier. The 50 V rail is industry standard for ATC transmitters, making the part an easy upgrade from older bipolar finals while preserving existing power-supply designs. Ruggedness into load mismatch is critical for ATC installations feeding long cable runs and large antenna farms.
Recomendado
Air-Traffic-Control and Weather Radar Power Amplifier
Air-traffic-control primary radars and weather-radar transmitters require 330 W-class pulsed final stages operating at L-band, exactly the application envelope of the MRF6V14300HSR5. Its 18 dB gain at 1.4 GHz and 50 V bias rail are aligned with ATC transmitter designs, allowing reuse of legacy power-supply and modulator hardware. The NI-780S ceramic package provides the low thermal resistance needed for pulsed service where peak power is high but average dissipation stays manageable. NXP's VHV6 LDMOS process gives this part strong ruggedness into VSWR, which is essential for outdoor radar installations where antenna icing and feed-horn faults can cause severe mismatch. Engineers typically combine the MRF6V14300HSR5 with a circulator and PIN-diode T/R switch for full radar duplexing.
Recomendado
Avionics DME / TACAN Final Amplifier
Distance Measuring Equipment (DME) and TACAN avionics interrogators transmit pulsed RF at 1025-1150 MHz with extensions into the L-band radar spectrum. The MRF6V14300HSR5's 1200-1400 MHz coverage and 330 W peak output are well suited to airborne and ground-based DME/TACAN transmitters. Its 50 V bias aligns with avionics power-bus standards, and the 18 dB gain at 1.4 GHz simplifies the IF-to-RF up-conversion chain by minimizing driver count. The NI-780S package's source-down flange provides robust mechanical mounting for airborne equipment subject to vibration and thermal cycling. Pulsed duty cycle ratings of 1% to 12% match DME interrogation pulse pairs.
Recomendado
Pulsed RF Signal Generator / Test Amplifier
Laboratory pulsed-RF signal generators and radar test sets benefit from the MRF6V14300HSR5's high peak output and predictable 18 dB gain. Engineers use the part to verify receiver sensitivity, dynamic range, and range-gate timing in a controlled test environment without depending on a full radar modulator. The 50 V nominal supply and 1% to 12% duty cycle capability allow the amplifier to be exercised over a wide envelope, characterizing system response under realistic pulsed loading. The NI-780S package simplifies bench-top heatsinking through a standard copper thermal block. NXP's VHV6 process provides excellent pulse-to-pulse stability for repeatable measurements.
Recomendado
Industrial Pulsed RF Heating / Drying
Industrial pulsed-RF heating and drying systems operating in the L-band can leverage the MRF6V14300HSR5 as a final amplifier stage. Its 330 W peak power, 50 V bias, and rugged LDMOS design tolerate the load-mismatch transients common when heating wet or variable-density materials. The 1200-1400 MHz operating band overlaps with ISM-adjacent frequencies used in specialized drying processes. The 1% to 12% duty cycle window allows energy to be delivered in controlled bursts, matching the thermal-relaxation profile needed for sensitive materials. The NI-780S package simplifies integration into industrial RF modules with standard water-cooled or forced-air heatsinks.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6V14300HSR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF6V14300HR5 | MRF6V14300HR3 | MRF6V14300HSR3 | MRF6V14300H |
|---|---|---|---|---|---|
| Package | NI-780S (SOT1793) | NI-780S (SOT1793) - same | NI-780S (SOT1793) - same | NI-780S (SOT1793) - same | NI-780S (SOT1793) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Peak Output Power | 330 W | 330 W | 330 W | 330 W | 330 W |
| Operating Frequency | 1200-1400 MHz | 1200-1400 MHz | 1200-1400 MHz | 1200-1400 MHz | 1200-1400 MHz |
| Drain Voltage (Test) | 50 V | 50 V | 50 V | 50 V | 50 V |
| Typical Gain at 1.4 GHz | 18 dB | 18 dB | 18 dB | 18 dB | 18 dB |
| Duty Cycle | 1% to 12% | 1% to 12% | 1% to 12% | 1% to 12% | 1% to 12% |
| Reel / Packaging Suffix | SR5 | R5 | R3 | SR3 | None (base MPN) |
Diferenciadores clave
- Highest available tape-and-reel variant of the family (frente a MRF6V14300H)
- Same electrical spec as R5 but different reel orientation (frente a MRF6V14300HR5)
- Identical die, different reel orientation for legacy lines (frente a MRF6V14300HSR3)
Notas de diseño
Estimated. At 330 W peak output with a 10% duty cycle, the average dissipation in the MRF6V14300HSR5 is roughly 33 W plus DC quiescent losses; size the heatsink to keep the ceramic flange below 100 C in worst-case ambient. The NI-780S package relies on the source-down flange for primary heat removal, so use a copper thermal block with adequate thermal compound and verify thermal resistance with a thermocouple at the flange center.
Use a low-loss RF substrate such as Rogers RO4350B or RO4003C for the matching-network traces around the MRF6V14300HSR5. Keep the gate bias-tee traces narrow and well isolated from the drain RF path to prevent oscillation, and place 50 V drain decoupling (electrolytic plus 100 nF plus 1 nF) within 5 mm of the drain lead to suppress pulse-current ringing.
Always sequence the gate bias on BEFORE applying 50 V drain bias to avoid in-rush current spikes that can damage the MRF6V14300HSR5. Do not exceed the 100 V Vds rating under any load-mismatch transient, and confirm the load-pull impedance presented to the drain matches the recommended source/load impedance from the NXP datasheet to preserve gain and efficiency.
Información de cumplimiento
RoHS and lead free per NXP product page. Not AEC-Q100 qualified (avionics/industrial discrete RF). REACH compliance confirmed by NXP standard declaration; halogen-free status not explicitly declared in retrieved data.
