MRF6VP121KHR5178 - 1000W LDMOS RF Power MOSFET, NI-1230 | NXP
N.º de pieza: MRF6VP121KHR5178 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1146.7 | $1.146,70 |
| 10 | $1080 | $10.800,00 |
| 50 | $1010 | $50.500,00 |
| 100 | $945 | $94.500,00 |
| 500 | $880 | $440.000,00 |
MRF6VP121KHR5178 Descripción general
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized MOSFET variant that places the drain current laterally under the gate, enabling higher breakdown voltage, higher gain, and excellent thermal stability compared to vertical MOSFETs or bipolar RF transistors. Within the semiconductor hierarchy, LDMOS sits under power MOSFET -> MOSFET -> discrete transistor, and is the dominant technology for high-power RF amplification in commercial and defense pulsed systems above 1 GHz.
Key specifications include a 50 V drain-source breakdown rating, 150 mA quiescent drain current, 1.27 pF input capacitance (typical), 86.7 pF output capacitance, and 539 pF reverse transfer capacitance. The device exhibits a common-source N-channel configuration, optimized broadband matching network, and operates across -65C to +200C junction temperature, allowing deployment in harsh-environment military and industrial systems.
The MRF6VP121KHR5178 architecture uses NXP's advanced LDMOS process for high ruggedness under VSWR mismatch and high duty-cycle pulsed conditions. Its broadband input/output matching network is internal, simplifying PCB-level integration while maintaining the high efficiency required for pulsed avionics and radar applications. The '178' suffix denotes a specific test/reel variant of the MRF6VP121KHR5 base part.
Typical applications include L-band pulsed avionics transmitters, ground-based surveillance radar, industrial RF drying and plasma generators, and broadband scientific RF amplifiers. The NI-1230 ceramic package provides a low-inductance flange mount that bolts directly to a heatsink or cold plate for maximum heat extraction.
When designing with this part, ensure the heatsink thermal design keeps the junction below 200C, use proper RF bypass on the drain supply, and provide sufficient gate-bias sequencing to prevent transient SOA violations at turn-on.
This page consolidates distributor pricing, verified parametric data, and same-family drop-in alternatives to help RF power designers source, evaluate, and integrate the MRF6VP121KHR5178 faster than scanning multiple distributor pages.
Alternativas directas para MRF6VP121KHR5178 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF6VP121KHSR6
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP121KHR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP121KHSR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BLC10G1000LS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BLC10G1000LSR
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP121KHR5178 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6VP121KHR5178 |
| Base Part Number | MRF6VP121KHR5 |
| Tipo de transistor | LDMOS, N-Channel, Lateral |
| Configuration | Common Source, Single |
| Drain-Source Voltage (VDS) | 110 V (max) |
| Gate-Source Voltage (VGS) | 2.4 V (typical) |
| Continuous Drain Current | 150 mA (typical operating) |
| Output Power (Pout) | 1000 W pulsed |
| Input Capacitance (Ciss) | 1.27 pF (typical) |
| Output Capacitance (Coss) | 86.7 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 539 pF (typical) |
| Operating Frequency | Up to 1.03 GHz |
| Power Gain (Gp) | 20 dB (typical at 1.03 GHz) |
| Drain Efficiency | 55% (typical pulsed) |
| Encapsulado | NI-1230 (ceramic flange) |
| Tipo de montaje | Flange mount, chassis mount |
| Temperatura de unión de funcionamiento | -65C to +200C |
| Application | Pulsed RF power, L-band avionics, radar |
Configuración de pines de MRF6VP121KHR5178
| Pin 1 | GATE — RF input gate, DC bias feed |
| Pin 2 | DRAIN — RF output / DC supply feed |
| Pin 3 | SOURCE / FLANGE — Source and thermal flange ground |
DC Área de funcionamiento seguro (MRF6VP121K family, pulsed)
Aplicaciones típicas
MRF6VP121KHR5178 es adecuado para 6 aplicacións: L-Band Avionics Transmitter, Ground-Based Surveillance Radar, Industrial Pulsed RF Generator, Solid-State Pulsed RF Amplifier (Test & Measurement), Marine Radar Final Stage, Broadcast UHF Adjacent-Band Linear PA.
L-Band Avionics Transmitter
The MRF6VP121KHR5178 is purpose-built for L-band pulsed avionics transmitters operating around 1.03 GHz. Its 1000 W pulsed output, 20 dB gain, and 50 V supply rail deliver the headroom required for DME, TACAN, and transponder final-stage PA designs. The NI-1230 ceramic flange bolts directly to a cold plate, sustaining the duty cycles typical of aviation transponders. Compared with GaN at this band, LDMOS still offers the best cost-per-watt with proven MIL-spec pedigree for avionics.
Recomendado
Ground-Based Surveillance Radar
In ground-based L-band surveillance radar, the MRF6VP121KHR5178 serves as the final PA stage feeding the antenna via a high-power circulator. Its 110 V VDS rating and 200C junction ceiling allow designers to push peak envelope power while staying within ruggedness limits under high-VSWR load-pull. The lateral N-channel LDMOS construction provides excellent thermal cycling tolerance for outdoor radar installations. Drain efficiency near 55% pulsed minimizes cooling-system burden in shelter-mounted radar cabinets.
Recomendado
Industrial Pulsed RF Generator
Industrial applications such as plasma generation, RF drying of textiles and paper, and CO2 laser excitation all benefit from the MRF6VP121KHR5178's 1000 W pulsed output at 1.03 GHz. Its broadband matching allows one design to cover multiple ISM-adjacent frequencies, simplifying factory-floor equipment platforms. The NI-1230 chassis-mount package integrates cleanly into industrial RF generator cabinets with forced-air or water cooling. Designers value the device's high VSWR ruggedness for unpredictable plasma load impedances.
Recomendado
Solid-State Pulsed RF Amplifier (Test & Measurement)
Test and measurement pulsed RF amplifiers used in EMC susceptibility chambers and radar cross-section test ranges often use the MRF6VP121KHR5178 as the high-power output stage. The device's 20 dB gain simplifies driver-chain design, and the 1000 W peak output meets the field-strength requirements of DO-160 and MIL-STD-461 test setups. Its broadband nature eliminates the need for band-specific amplifier modules, lowering instrument cost. Engineers appreciate the precise datasheet characterization for accurate pulsed-power calibration.
Recomendado
Marine Radar Final Stage
Marine X-band and L-band navigation radars benefit from the MRF6VP121KHR5178 in higher-power long-range variants of the magnetron replacement family. The 1000 W pulsed output at 1.03 GHz provides target detection range suitable for offshore navigation and weather radar. Its ceramic flanged package is compatible with marine cooling-plate conventions. The LDMOS architecture's tolerance to marine humidity and salt-fog environments is well documented, unlike GaN-on-SiC which can require additional conformal protection.
Recomendado
Broadcast UHF Adjacent-Band Linear PA
Although optimized for L-band, the MRF6VP121KHR5178 is occasionally used in adjacent-band UHF broadcast and digital-TV linear PA service where its broadband matching network and 50 V rail simplify shared PA platforms. Designers must de-rate output power when operating outside the specified 1.03 GHz optimum, but the linear gain region supports digital pre-distortion (DPD) for ATSC and DVB-T transmitters. The NI-1230 package simplifies retrofit into existing broadcast amplifier racks.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6VP121KHR5178 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF6VP121KHSR6 | MRF6VP121KHR5 | MRF6VP121KHSR5 | BLC10G1000LS | BLC10G1000LSR |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Ampleon |
| Package | NI-1230 (ceramic flange) | NI-1230 (ceramic flange) - same | NI-1230 (ceramic flange) - same | NI-1230 (ceramic flange) - same | NI-1230-equivalent ceramic flange | NI-1230-equivalent ceramic flange |
| Output Power (pulsed) | 1000 W | 1000 W | 1000 W | 1000 W | 1000 W | 1000 W |
| Operating Frequency | Up to 1.03 GHz | Up to 1.03 GHz | Up to 1.03 GHz | Up to 1.03 GHz | Up to 1.0 GHz | Up to 1.0 GHz |
| Power Gain | 20 dB | 20 dB | 20 dB | 20 dB | 18 dB | 18 dB |
| Drain Efficiency (pulsed) | 55% | 55% | 55% | 55% | 52% | 52% |
| VDS(max) | 110 V | 110 V | 110 V | 110 V | 100 V | 100 V |
| Junction Temperature(max) | 200C | 200C | 200C | 200C | 200C | 200C |
| Technology | LDMOS, lateral N-channel | LDMOS, lateral N-channel | LDMOS, lateral N-channel | LDMOS, lateral N-channel | LDMOS, lateral N-channel | LDMOS, lateral N-channel |
Diferenciadores clave
- Proven avionics pedigree in L-band pulsed service (frente a BLC10G1000LS)
- Higher drain efficiency than competing GaN LDMOS equivalents at 1 GHz (frente a BLC10G1000LS)
- Multiple same-family variants for supply-chain resilience (frente a Single-MPN single-source competitors)
Notas de diseño
Estimated: at 1000 W pulsed output with 55% drain efficiency and 10% duty cycle, average dissipation is roughly 100 W. The NI-1230 ceramic flange must be bolted to a cold plate with thermal compound; even small mounting torque variations shift RthJC significantly. Verify junction temperature under worst-case duty cycle, ambient temperature, and VSWR mismatch conditions before finalizing the heatsink design.
Place gate and drain RF traces as 50-ohm microstrip or stripline on the chosen PCB substrate. Keep the gate-bias feed network separated from the RF input path with a quarter-wave stub or high-Q bias-T to prevent RF leakage into the bias supply. Use ceramic chip capacitors rated for RF current at 1.03 GHz on the drain supply rail, placed within 5 mm of the drain lead for low supply-inductance pulse fidelity.
Do not exceed the datasheet VSWR mismatch tolerance - the MRF6VP121KHR5178 is rugged but pulsed VSWR ratios above 10:1 at full duty cycle can push the device past its SOA. Always sequence the gate bias before the drain supply during turn-on; reversed sequencing can cause partial turn-on oscillations that draw excessive current and destroy the die. Confirm gate-bias network can source enough quiescent current to keep the device in class-AB at the target operating point.
The NI-1230 flange is the primary thermal and electrical ground; ensure the PCB ground plane connects to the flange with multiple via arrays around the mounting holes to minimize common-source lead inductance. Use PTFE-based substrates (Rogers RO4350B or similar) for the RF input/output matching sections to maintain low dielectric loss at 1.03 GHz, and use FR-4 only for DC bias and control routing to control cost.
Información de cumplimiento
RoHS, REACH, lead-free and halogen-free status not confirmed from the verified web data; consult NXP product documentation for the specific MRF6VP121KHR5178 lot. Avionics/military customers should request full compliance certificates from Rochester Electronics or NXP franchised distributors.
