MRF6VP3091NBR1 - 90W 470-860MHz LDMOS RF Power Transistor | NXP
N.º de pieza: MRF6VP3091NBR1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132 | $1.320,00 |
| 100 | $118.5 | $11.850,00 |
| 500 | $105 | $52.500,00 |
| 1.000 | $95 | $95.000,00 |
MRF6VP3091NBR1 Descripción general
An RF power LDMOS transistor is a specialized power MOSFET built on a laterally-diffused metal-oxide-semiconductor process that integrates the high input impedance of a MOSFET with the rugged high-voltage, high-current capability needed for RF amplification. Within the broader taxonomy, the MRF6VP3091NBR1 sits in the LDMOS family, which belongs to RF power transistors, which in turn belong to discrete power semiconductors and ultimately to active electronic components. LDMOS devices dominate UHF/VHF broadcast transmitter final stages because they offer high gain, excellent thermal stability, and broadband capability compared to bipolar or GaN alternatives in their power class.
Key features include 90 W peak envelope power capability, 22 dB typical power gain at 860 MHz, 50 V drain supply operation, integrated ESD protection, and gold metallization for long-term reliability. The device is optimized for DVB-T, ATSC, and analog broadcast transmitter final stages, with broadband matching supporting 470-860 MHz UHF TV bands. Internally input-matched for ease of design and broadband operation, the MRF6VP3091NBR1 reduces external matching component count versus legacy bipolar parts.
The LDMOS architecture uses a laterally-diffused drift region to support the high drain voltage while maintaining low on-resistance and high switching speed. NXP's generation-6 LDMOS process delivers high efficiency (~31% typical at 860 MHz) and excellent thermal performance through the TO-272 WB-4 over-molded plastic package, with an operating junction temperature up to 200 C and a plastic MO-217 style body that simplifies board mounting versus ceramic flanged parts.
Typical applications include UHF TV transmitter final stages (470-860 MHz DVB-T/ATSC), commercial aerospace broadband amplifiers, industrial RF heating, and scientific particle accelerator RF sources. The wide broadband response makes the device a versatile final-stage amplifier for multi-band broadcast transmitters where one part covers the entire UHF band without band-switching.
When designing with this device, ensure adequate thermal management: with 90 W peak RF output and ~31% drain efficiency, approximately 200 W of waste heat must be dissipated. Use a copper heatsink or cold plate with forced air cooling to maintain junction temperature below the maximum rating. Always sequence the gate bias (VGS) before applying drain voltage (VDD) to prevent uncontrolled current surges during startup.
This page synthesizes distributor pricing, same-package and cross-package alternatives, parametric comparison, and practical RF design notes not found in the manufacturer datasheet alone. Engineers can evaluate drop-in drop-out options for hard-to-source or end-of-life broadcast RF transistors.
Alternativas directas para MRF6VP3091NBR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF6VP3091NR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP3091NR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP3091NBR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BLF888
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BLF881
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP3091NBR1 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6VP3091NBR1 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Frequency Range | 470 MHz to 1215 MHz |
| Test Frequency | 860 MHz |
| Drain-Source Voltage (VDSS) | 50 V |
| Output Power (POUT) | 18 W at 860 MHz, 50 V |
| Peak Envelope Power | 90 W (CW/broadcast application) |
| Power Gain (Gps) | 22 dB at 860 MHz |
| Drain Efficiency (ηD) | ~31% typical at 860 MHz |
| Encapsulado / Carcasa | TO-272 WB-4 (over-molded plastic, 4-lead) |
| Tipo de montaje | Surface Mount |
| Configuration | Common Source, 2 elements |
| Temperatura de unión de funcionamiento | -40C to +200C |
| Nivel de sensibilidad a la humedad (MSL) | 3 |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
| Packaging | Tape & Reel (R1 = 500 pcs/reel) |
Configuración de pines de MRF6VP3091NBR1
| Pin 1 | Drain (RF Output) — Drain connection - RF output and DC supply, 50V max |
| Pin 2 | Gate (RF Input) — Gate connection - RF input and gate bias |
| Pin 3 | Drain (DC Supply) — Drain connection - DC supply, internally connected to pin 1 |
| Pin 4 | Source (Ground) — Source connection - RF and DC ground, also thermal pad |
DC Área de funcionamiento seguro
Aplicaciones típicas
MRF6VP3091NBR1 es adecuado para 6 aplicacións: UHF TV Broadcast Transmitter Final Stage, Commercial Aerospace Broadband RF Amplifier, Industrial RF Heating and Plasma Generation, Particle Accelerator and Scientific RF Source, High-Power UHF RFID Reader Base Station, Aerospace/IFF and TACAN Transponder Amplifier.
UHF TV Broadcast Transmitter Final Stage
The MRF6VP3091NBR1 is engineered for the final RF amplifier stage of UHF television transmitters operating from 470-860 MHz, covering DVB-T, ATSC, ISDB-T, and DMB-T/H digital broadcast standards. Its 22 dB power gain at 860 MHz eliminates a driver stage in many transmitter designs, and the 90 W PEP capability handles the high peak-to-average ratio of OFDM-modulated digital TV signals without compression. Placed after the modulator/exciter, it delivers 18 W average output per device - in the PRD that simplifies transmitter thermal design compared to higher-power parts requiring more aggressive cooling. Designers value its internally matched input for compact push-pull or single-ended final-stage layouts.
Recomendado
Commercial Aerospace Broadband RF Amplifier
The MRF6VP3091NBR1's 470-1215 MHz broadband response and aerospace-grade reliability qualification make it well suited for commercial aerospace broadband RF amplifier applications, including in-cabin wireless distribution, telemetry transmitters, and navigation aids. Its 22 dB gain enables a compact two-stage chain for >30 W output in the L-band. The TO-272 WB-4 over-molded plastic package withstands the mechanical shock and vibration profile of airborne installations while delivering the thermal performance required for continuous duty in airborne transmitters. Aerospace designers choose this part because NXP/Freescale maintains the full qualification documentation required for DO-160 and similar avionics standards.
Recomendado
Industrial RF Heating and Plasma Generation
The MRF6VP3091NBR1's 90 W PEP continuous-duty capability and 50 V drain rating suit industrial RF heating applications operating in the UHF ISM and broadcast bands, including plastic welding, plasma generation, and dielectric heating systems. Its broadband 470-1215 MHz response lets a single amplifier chain cover multiple industrial process frequencies without re-matching. The TO-272 WB-4 surface-mount package simplifies automated assembly in high-volume industrial RF generator production. Industrial RF designers value the part's 31% typical drain efficiency, which reduces cooling plate size and total system cost versus lower-efficiency bipolar alternatives.
Recomendado
Particle Accelerator and Scientific RF Source
The MRF6VP3091NBR1's broadband UHF response makes it useful as a final amplifier stage in scientific RF sources for particle accelerators, nuclear magnetic resonance (NMR) systems, and university research plasma drivers operating in the 470-860 MHz range. Its 22 dB gain and 50 V operation align with the requirements of many small-to-medium synchrotron and cyclotron RF systems where pulsed or CW power up to 90 W PEP is required. The over-molded plastic package allows placement in vacuum or near-vacuum research environments where ceramic flange parts risk outgassing. Researchers select this part because the NXP datasheet provides load-pull contours needed for first-pass amplifier design without an extensive in-house characterization lab.
Recomendado
High-Power UHF RFID Reader Base Station
The MRF6VP3091NBR1 serves as the final RF power stage in long-range UHF RFID reader base stations operating in the 860-960 MHz band, where regulatory limits such as FCC Part 15 and ETSI EN 302 208 cap radiated power at 1-4 W ERP. With 22 dB gain, the device enables a 10 mW reader ASIC input to drive the 1-2 W output needed for ISO 18000-63 passive tag interrogation at distances up to 10 m. The broadband response accommodates global RFID band variations (UHF 840-960 MHz) without re-matching. RFID system designers choose this part because the TO-272 WB-4 SMD package supports the SMT assembly lines used in volume reader manufacturing.
Recomendado
Aerospace/IFF and TACAN Transponder Amplifier
The MRF6VP3091NBR1's 1 GHz-class response and aerospace-grade qualification history make it a candidate for IFF (Identification Friend or Foe), TACAN, and DME transponder RF amplifier chains operating in the 962-1213 MHz L-band. Its 22 dB gain enables a compact two-stage driver-final topology for transponder interrogators and ground station beacons. Aerospace transponder designers select this part because the NXP/Freescale datasheet provides pulsed-RF load-pull data needed for IFF transponder pulse-shape compliance. The TO-272 WB-4 package allows direct PCB mounting in modern transponder modules that have moved away from traditional bolt-down ceramic flanged parts.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6VP3091NBR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF6VP3091NR1 | MRF6VP3091NR5 | MRF6VP3091NBR5 | BLF888 | BLF881 |
|---|---|---|---|---|---|---|
| Package | TO-272 WB-4 (over-molded plastic) | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 family SMD - same footprint class | TO-272 family SMD - same footprint class |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Ampleon |
| Output Power at 860 MHz | 18 W | 18 W | 18 W | 18 W | 150 W (higher power class) | 150 W (higher power class) |
| Power Gain | 22 dB at 860 MHz | 22 dB | 22 dB | 22 dB | ~21 dB | ~20 dB |
| Drain Voltage (VDD) | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Frequency Range | 470-1215 MHz | 470-1215 MHz | 470-1215 MHz | 470-1215 MHz | 470-860 MHz | 470-860 MHz |
| Packaging Variant Code | -B (tape and reel) | no -B (tray) | no -B (tray) | -B (tape and reel) | N/A | N/A |
Diferenciadores clave
- Tape-and-reel packaging optimized for high-volume SMT assembly (frente a MRF6VP3091NR1 (tray packaging))
- 22 dB gain at 860 MHz with 50 V drain supply (frente a Ampleon BLF888 (150 W class))
- Internal input matching reduces external component count (frente a Legacy bipolar UHF power transistors (e.g. older BLV series))
Notas de diseño
Estimated: at 18 W output, ~31% drain efficiency at 860 MHz, and 50 V drain supply, the part dissipates roughly 40 W of heat continuously (Pdiss = POUT/η - POUT = 18/0.31 - 18 ≈ 40 W). The TO-272 WB-4 over-molded plastic package must be mounted to a substantial copper heatsink or cold plate; insufficient cooling will cause junction temperature to exceed the 200 C maximum rating, leading to immediate device destruction. Plan for an aluminum or copper heatsink with forced-air cooling for continuous-duty broadcast transmitter applications.
Estimated: the TO-272 WB-4 source lead is also the main thermal pad and must be soldered to a substantial PCB copper pour (minimum 1 oz copper, ideally 2 oz, over at least 1 square inch of board area) to spread heat from the package to the chassis-mounted heatsink. Input and output microstrip traces should use 50 ohm controlled impedance on a low-loss substrate such as Rogers RO4350B; FR-4 is acceptable for narrowband UHF applications but increases insertion loss above 1 GHz.
Estimated: gate bias must be applied before drain voltage to prevent uncontrolled drain current surges during startup. A bias sequencing circuit that monitors drain voltage and enables gate bias only when VDD > 5 V is recommended. Exceeding the 50 V VDD maximum - even transient - will permanently damage the part; include a TVS diode or crowbar circuit on the drain supply. The device is moisture-sensitive (MSL 3), so the factory tape-and-reel package must not be opened until bake-out and reflow are imminent.
Estimated: input and output matching networks should be placed on the same PCB side as the device to minimize via-induced parasitic inductance. Use grounded coplanar waveguide (GCPW) on a low-loss substrate for the 470-1215 MHz band to suppress spurious modes above 1 GHz. Keep the gate bias feed network isolated from the RF input trace by at least 3x the substrate thickness to prevent oscillation. Decouple the drain supply with a 1 nF chip capacitor within 2 mm of the drain lead, followed by a 10 uF electrolytic.
Información de cumplimiento
RoHS compliant per NXP product page specifications. Halogen-free status was not explicitly stated in the verified web data and is marked unknown. Not AEC-Q100 qualified (not an automotive part).
