MRF6VP41KHR7 - 450MHz 1000W RF Power MOSFET | NXP
N.º de pieza: MRF6VP41KHR7 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $248.5 | $248,50 |
| 10 | $235.2 | $2.352,00 |
| 100 | $218.75 | $21.875,00 |
| 250 | $205 | $51.250,00 |
| 500 | $192.4 | $96.200,00 |
MRF6VP41KHR7 Descripción general
RF Power MOSFETs are specialized transistors built to deliver high RF power levels to a 50-ohm load, typically used in the final stage of a transmitter chain. They are categorized under the broader family of power transistors, which includes BJTs, LDMOS, and GaN devices. Within the LDMOS family, the MRF6VP41KHR7 belongs to NXP's VHV6 (very-high-voltage, 6th generation) platform targeting pulsed applications at voltages up to 110 V. The lateral MOSFET structure provides high breakdown voltage, low thermal resistance, and excellent gain flatness across the operating band.
Key electrical features include a 110 V drain-source voltage rating (Vds), 50 V test bias for 1000 W pulsed output, 20 dB typical gain, and unmatched input/output that allows flexibility in external matching network design. The NI-1230 package is a high-performance ceramic flange-mount construction providing low thermal resistance and robust mechanical mounting suitable for high-power pulsed amplifiers.
The MRF6VP41KHR7 utilizes NXP's 6th-generation high-voltage LDMOS process, which integrates drain-to-source breakdown protection, ESD protection, and a source-connected metal flange for direct heatsink attachment. The lateral geometry supports very high breakdown voltage with low parasitic capacitances, enabling high drain efficiency in Class AB or Class C pulsed amplifier topologies.
Typical applications include pulsed radar transmitters, MRI RF power amplifiers, particle accelerator RF sources, and pulsed industrial heating systems. Designers select this part when system requirements demand 1000 W peak power with high duty cycle and high voltage operation.
A critical design consideration is heatsinking: at 1000 W pulsed output with realistic efficiencies, the device dissipates significant average power and must be bolted to a forced-air or liquid-cooled heatsink. Input/output matching must be designed for the specific frequency band of operation since the part is internally unmatched.
This page synthesizes distributor pricing, application context, and design notes that complement, but do not replace, the manufacturer's datasheet.
Alternativas directas para MRF6VP41KHR7 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF6VP41KHS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP41K
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP41KHR6
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF6VP41KHR7 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage Vds | 110 V |
| Continuous Drain Current Id | 100 µA (leakage) |
| Operating Frequency Range | 10 MHz to 500 MHz |
| Center Frequency | 450 MHz |
| Power Output (Pulsed) | 1000 W |
| Test Voltage | 50 V |
| Test Current | 150 mA |
| Power Gain | 20 dB (typ) |
| Encapsulado / Carcasa | NI-1230 (ceramic, flange mount) |
| Configuration | Dual channel |
| Application | Pulsed RF power, industrial/medical/scientific |
| Input/Output Matching | Unmatched |
| Tipo de montaje | Flange / chassis mount |
Configuración de pines de MRF6VP41KHR7
| Pin 1 | Gate 1 — RF input gate for channel 1 |
| Pin 2 | Drain 1 — RF output drain for channel 1 |
| Pin 3 | Gate 2 — RF input gate for channel 2 |
| Pin 4 | Drain 2 — RF output drain for channel 2 |
| Pin 5 | Source (Flange) — Common source, bolted to heatsink ground |
Área de funcionamiento seguro (DC, pulsed)
Aplicaciones típicas
MRF6VP41KHR7 es adecuado para 6 aplicacións: Pulsed Radar Transmitter (L-band), MRI RF Power Amplifier, Particle Accelerator RF Source, Industrial Pulsed Heating / Drying, Plasma Generation RF Source, High-Field NMR Spectrometer.
Pulsed Radar Transmitter (L-band)
The MRF6VP41KHR7 is well suited for L-band pulsed radar final-stage power amplifiers operating at 450 MHz. Its 1000 W pulsed output and 110 V drain breakdown allow high peak power with manageable duty cycle, while the 20 dB gain reduces driver-stage complexity. The unmatched NI-1230 package permits the use of low-loss microstrip matching networks tuned for radar pulse profiles, and its ceramic flange-mount construction handles the thermal load of high-peak pulsed operation. Place the device on a water-cooled cold plate and bias at 50 V for nominal 1000 W pulsed output per the manufacturer datasheet.
Recomendado
MRI RF Power Amplifier
In MRI RF power amplifier chains, the MRF6VP41KHR7 delivers the high peak power needed for nuclear magnetic resonance excitation at 450 MHz. Its 110 V breakdown supports high-voltage pulsed operation, and the 20 dB gain reduces the number of driver stages. The lateral LDMOS structure provides the ruggedness required for the high-peak, low-duty-cycle pulses typical in MRI transmit coils. Designers typically bias at 50 V with 150 mA quiescent current, matched via external stripline networks to the MRI coil load. The NI-1230 flange mounts directly to a liquid-cooled heatsink in the bore-room environment.
Recomendado
Particle Accelerator RF Source
Scientific particle accelerators at 450 MHz rely on high-power pulsed amplifiers like the MRF6VP41KHR7 to drive cavity structures. The 1000 W peak power and 110 V drain rating enable the high RF voltages required for cavity field buildup, while the unmatched input/output flexibility allows integration with the narrowband cavity load. The 20 dB gain simplifies the drive chain, and the NI-1230 ceramic package is widely used in accelerator installations due to its proven reliability in continuous scientific service. Bias at 50 V with forced-air or water cooling as specified in the NXP datasheet thermal section.
Recomendado
Industrial Pulsed Heating / Drying
Industrial RF heating systems operating at 450 MHz can use the MRF6VP41KHR7 to deliver 1000 W peak power into applicator loads. Its pulsed capability and 110 V rating suit dielectric heating of materials with controlled duty cycles, while the unmatched package lets designers tune matching to specific applicator impedances. The ceramic flange-mount package supports 24/7 industrial duty when properly cooled, and the 20 dB gain reduces the number of driver stages in production heating systems. Designers should evaluate thermal performance with continuous duty and provide adequate heatsinking.
Recomendado
Plasma Generation RF Source
Semiconductor plasma processing equipment operating at 450 MHz can use the MRF6VP41KHR7 as a pulsed RF source for plasma ignition and sustainment. Its high peak power and 110 V drain rating produce the RF voltages needed to strike plasma chambers, while the lateral LDMOS structure delivers the ruggedness required for plasma load transients. The unmatched input/output allows matching to the plasma chamber's complex impedance, and the NI-1230 flange mount enables direct cold-plate integration in vacuum-process tool environments.
Recomendado
High-Field NMR Spectrometer
High-field NMR spectrometers operating at 450 MHz 1H Larmor frequency require pulsed RF power amplifiers like the MRF6VP41KHR7 for spin excitation. The 1000 W peak power and 20 dB gain support short, high-amplitude pulses essential for wideband excitation sequences, while the 110 V breakdown allows the high instantaneous voltages required for short-pulse fidelity. The unmatched NI-1230 package enables integration with the probe circuit, and the ceramic flange-mount construction supports the thermal dissipation during high-repetition-rate pulse trains. Bias at 50 V per the NXP datasheet for rated performance.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6VP41KHR7 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF6VP41KHS | MRF6VP41K | MRF6VP41KHR6 |
|---|---|---|---|---|
| Package | NI-1230 (ceramic flange) | NI-1230 - same | NI-1230 - same | NI-1230 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Pulsed Output Power | 1000 W | 1000 W | 1000 W | 1000 W |
| Operating Frequency | 450 MHz (10-500 MHz range) | 450 MHz (10-500 MHz range) | 450 MHz (10-500 MHz range) | 450 MHz (10-500 MHz range) |
| Drain-Source Voltage (Vds) | 110 V | 110 V | 110 V | 110 V |
| Test Bias Voltage | 50 V | 50 V | 50 V | 50 V |
| Power Gain | 20 dB | 20 dB | 20 dB | 20 dB |
| Internal Matching | Unmatched (input and output) | Unmatched | Unmatched | Unmatched |
Diferenciadores clave
- Highest pulsed power in NI-1230 family at 450 MHz (frente a MRF6VP41K)
- Dual-channel lateral MOSFET topology (frente a Single-channel pulsed RF MOSFETs in same frequency range)
- 110 V drain breakdown for high-voltage pulsed operation (frente a Standard 50 V pulsed LDMOS)
Notas de diseño
Estimated: at 1000 W pulsed output with 55% drain efficiency and 10% duty cycle, average dissipation reaches approximately 180 W. The NI-1230 flange must be bolted to a heatsink with thermal compound applied, with thermal resistance (theta_JC) kept low enough to limit junction temperature rise. Forced-air cooling at 200 LFM or water cooling is typical. Verify junction temperature with the manufacturer's thermal model under worst-case duty cycle and ambient conditions. Source: NXP MRF6VP41KHR7 datasheet thermal section.
Because the part is unmatched, both input and output matching networks must be designed on a low-loss substrate (Rogers RT/duroid 5880 or RO4003C recommended). Keep gate and drain traces short, use 50-ohm controlled-impedance microstrip, and place DC bias decoupling capacitors close to the bias feed points. The source flange must make solid low-inductance ground contact to the heatsink; any source inductance degrades gain and stability. Source: NXP MRF6VP41KHR7 datasheet and reference designs.
Do not exceed 110 V on the drain, even momentarily, as the breakdown voltage has zero tolerance for overshoot. Use a TVS diode or clamping circuit on the drain supply to absorb inductive transients. Ensure the gate bias is sequenced properly (drain applied before or simultaneously with gate) to avoid partial turn-on that can cause thermal runaway. Avoid operating the device into a mismatched load (high VSWR) without an isolator or load tolerance review per datasheet. Source: NXP MRF6VP41KHR7 datasheet.
Route gate and drain traces on opposite sides of the substrate or with significant ground separation to minimize coupling. Use plated-through vias to stitch the ground plane around the device mounting area to suppress parallel-plate modes. The drain bias feed should include a 1-10 uF electrolytic plus a 100 nF ceramic bypass at the package flange. Source: NXP MRF6VP41KHR7 datasheet layout recommendations.
Información de cumplimiento
Compliance information not explicitly listed in retrieved distributor data; refer to NXP product page or manufacturer datasheet for definitive RoHS/REACH declarations. AEC-Q100 not applicable for high-power RF MOSFET.
