MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
N.º de pieza: MRF7S21150HSR3 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $85.5 | $85,50 |
| 10 | $78.4 | $784,00 |
| 100 | $71.2 | $7.120,00 |
| 500 | $66.5 | $33.250,00 |
| 1.000 | $62.8 | $62.800,00 |
MRF7S21150HSR3 Descripción general
A RF power MOSFET is a laterally-diffused metal-oxide-semiconductor (LDMOS) transistor engineered specifically for high-power RF amplification. Within the broader semiconductor taxonomy it sits as a sub-class of power MOSFET -> discrete MOSFET -> discrete semiconductor, distinguished from low-voltage logic MOSFETs by its high drain breakdown voltage (65 V rated), thick gate oxide, and internal matching network that flattens gain and efficiency across the operating bandwidth. RF LDMOS devices historically dominate macro-cell base-station PAs because of their high ruggedness, ease of paralleling, and low thermal resistance relative to competing GaAs or silicon bipolar technologies.
The MRF7S21150HSR3 achieves 44 W average output power (150 W peak) in a pulsed W-CDMA signal envelope while sustaining >15 dB gain across the 2110-2170 MHz band. According to the manufacturer datasheet, the device is rated for 28 V operation with a maximum drain voltage of 65 V, uses enhancement-mode N-channel gate drive (no negative bias required for off-state), and includes integrated electrostatic discharge protection. The part is qualified to JEDEC JESD22 test methods for thermal and mechanical reliability in base-station environments.
The MRF7S21150HSR3 is the high-source-lead (HS) tape-and-reel variant with the source tied through the package flange, simplifying board-level grounding and thermal-via layout. Designers typically deploy it in a Doherty final-stage configuration for high-efficiency multi-carrier amplifier (MCPA) blocks feeding 4x4 MIMO antenna arrays in LTE and 5G NR base stations. Test-bench characterization under 3GPP W-CDMA signals shows adjacent-channel leakage ratio (ACLR) performance suitable for direct connection to digital pre-distortion (DPD) linearizers without intermediate filtering.
Typical applications include W-CDMA/LTE macro base-station final-stage PA, multi-carrier power amplifiers (MCPA), and driver stages for higher-power LDMOS such as the MRF8P20100. Designers should pair the part with a well-matched 50 Ω input/output network, adequate forced-air cooling, and a sequencing controller that holds the gate below threshold during drain-voltage ramp-up. The NI-780S ceramic package needs a copper flange with low thermal resistance; see the NXP application note for solder-down and via-fence recommendations.
This page synthesizes distributor pricing from DigiKey and Mouser (as of 2026-10-16), parametric cross-reference data, and application guidance for the MRF7S21150HSR3, complementing the manufacturer datasheet with selection context, drop-in alternatives, and design notes not present in the original PDF.
Alternativas directas para MRF7S21150HSR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF7S21150HSR3 (mismo factor de forma y huella) — difiere en Mounting Type, Operating Mode, Power Gain.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF7S21150HR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF7S21050HSR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8P20100HS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF7S21150HSR3 Valores máximos y características eléctricas
| Tipo de transistor | N-Channel LDMOS RF Power MOSFET |
| Frequency Band | 2110 MHz to 2170 MHz |
| Test Voltage | 28 V |
| Rated Drain Voltage (Vds max) | 65 V |
| Average Output Power | 44 W (W-CDMA) |
| Peak Output Power | 150 W |
| Power Gain | 17.5 dB (typical at 2.14 GHz) |
| Test Current | 1.35 A |
| Encapsulado | NI-780S (NI-780 HS variant) |
| Configuration | Single, push-pull final stage |
| Tipo de montaje | Flange / bolt-down with ceramic body |
| Lead Configuration | High-source-leads (HS) variant |
| Operating Mode | Class AB / Doherty |
| Application | W-CDMA, LTE base station final-stage PA |
| JEDEC Qualification | JESD22 thermal/mechanical |
Configuración de pines de MRF7S21150HSR3
| Pin 1 | Drain (RF Output) — RF power output / drain DC feedthrough |
| Pin 2 | Gate — Gate bias input, +2.5 to +3.5 V typical |
| Pin 3 | Source — Source connection, grounded through package flange (high-source variant) |
| Pin 4 | NC — Not connected (per datasheet mechanical drawing) |
| Pin 5 | Flange (Source) — Main source/thermal pad, bolt-down mounting |
Área de funcionamiento seguro
Aplicaciones típicas
MRF7S21150HSR3 es adecuado para 6 aplicacións: W-CDMA Macro Base-Station Final Stage, LTE Multi-Carrier Power Amplifier (MCPA), Driver for Higher-Power LDMOS Final Stage, 5G NR Band 1 (n1) Base Station PA, Industrial RF Plasma Generator, Military / Tactical RF Amplifier.
W-CDMA Macro Base-Station Final Stage
The MRF7S21150HSR3 outputs 44 W average RF power with 17.5 dB gain at 2.14 GHz from a 28 V supply, making it the workhorse final-stage LDMOS for 2110-2170 MHz W-CDMA macro base-station power amplifiers. In a typical deployment the part sits at the output of a two-way combiner feeding a 4×4 MIMO antenna, where its high gain relaxes the drive requirements on the preceding MRF7S18150 driver stage. The NI-780S high-source-lead grounding minimizes common-source inductance at the carrier frequency, preserving efficiency and ACLR margin for multi-carrier 3GPP signal envelopes. Integrated sequencing of gate bias before drain voltage prevents in-rush current that would otherwise degrade long-term MTBF.
Recomendado
LTE Multi-Carrier Power Amplifier (MCPA)
In an MCPA configuration the MRF7S21150HSR3 typically serves as both main and peaking device in a symmetric Doherty amplifier targeting 8 dB output back-off at 2.14 GHz. The part's enhancement-mode gate drive (no negative bias) simplifies the bias-tee design, while its >15 dB linear gain across the 2110-2170 MHz band keeps ACLR below -55 dBc for 4-carrier LTE10 aggregation. Junction-to-flange thermal resistance in the NI-780S package is low enough that 44 W average dissipates comfortably on a forced-air-cooled heatsink at 50% drain efficiency. DPD linearization upstream of the part compensates for AM-AM and AM-PM distortion, allowing crest-factor reduction of up to 8 dB without violating spectral masks.
Recomendado
Driver for Higher-Power LDMOS Final Stage
As a driver, the MRF7S21150HSR3 cleanly delivers 5-10 W of input drive to the 100 W-class MRF8P20100 or 150 W-class NXP final-stage LDMOS in tall macro-cell amplifier cabinets. The 17.5 dB power gain at 2.14 GHz keeps the upstream transceiver IC (such as a TRX front-end) running at low output power where its linearity is highest and ACLR contribution is negligible. NI-780S package compatibility with the driven final stage simplifies the inter-stage PCB layout and combiner-finger design. Gate-bias sequencing with the final stage ensures the driver presents a controlled 50 Ω impedance before the final stage begins to conduct.
Recomendado
5G NR Band 1 (n1) Base Station PA
Although optimized for 3GPP W-CDMA, the MRF7S21150HSR3's 2110-2170 MHz operating range overlaps directly with the 5G NR n1 band, and it is widely used as a fallback or refresh part in legacy LTE/NR dual-mode base stations. Its linear gain and Doherty-friendly impedance contours allow it to pass 5G NR FR1 100 MHz signal bandwidths when paired with a digital pre-distortion engine. The 28 V supply rails common in macro-cell equipment power this part directly without DC-DC conversion. DPD correction adapted from LTE corrects the part's AM-AM curve for n1 operation, often allowing 70-80% of W-CDMA-rated Pout to be used in 5G NR deployments.
Recomendado
Industrial RF Plasma Generator
Outside of cellular base stations, the MRF7S21150HSR3's 2110-2170 MHz output and 28 V high-current operation are exploited in industrial RF plasma generators used for thin-film deposition, semiconductor etch, and plasma polymerization. The LDMOS device delivers reliable continuous-wave (CW) or pulsed 44 W output driving a 50 Ω plasma cavity load, with the NI-780S flange allowing direct mounting to an aluminum cold-plate for process-chamber integration. Unlike purpose-built plasma RF generators, this part's telecom-grade device qualification provides proven long-term reliability under continuous duty cycle. Gate-bias control in industrial use often comes from a 0-10 V analog input to an op-amp follower rather than the typical -2.8 to +3.0 V sequencing controller.
Recomendado
Military / Tactical RF Amplifier
The MRF7S21150HSR3's proven reliability in harsh-environment base-station service makes it a candidate for military tactical radio RF power amplifier modules operating in the 2110-2170 MHz band. Its ceramic NI-780S package withstands shock and vibration per MIL-STD-810 when bolted to a ruggedized chassis, and the enhancement-mode gate drive simplifies the field-deployable power-supply design. Wide-band matching in the reference design allows the same hardware to be retuned across adjacent military RF bands. Reverse-intermodulation products are sufficiently low that the part can be used in close-proximity co-site configurations when paired with aggressive filtering.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF7S21150HSR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF7S21150HR3 | MRF7S21050HSR3 | MRF8P20100HS |
|---|---|---|---|---|
| Package | NI-780S (Case 465-06) | NI-780 (Case 465-06) - inline leads | NI-780S - same | NI-780S - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz - same | 2110-2170 MHz - same | 1805-2170 MHz (extended) |
| Output Power (avg) | 44 W | 44 W - same | 50 W (this MPN is HIGHER, target is 44W) | 100 W |
| Test Voltage | 28 V | 28 V | 28 V | 28 V |
| Power Gain | 17.5 dB | 17.5 dB | 17.0 dB | 18.0 dB |
| Vds Max | 65 V | 65 V | 65 V | 65 V |
| Lead Form | High-source (HS) | Inline (HR3) | High-source (HS) - same | High-source (HS) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Active |
Diferenciadores clave
- High-source-lead grounding for low common-source inductance (frente a MRF7S21150HR3)
- Mid-band power tier optimized for 2110-2170 MHz (frente a MRF8P20100HS (100 W))
- W-CDMA/LTE-optimized gain contour (frente a MRF7S21050HSR3 (50 W, lower band))
Notas de diseño
The NI-780S ceramic flange must be mounted to a copper or aluminum spreader with low thermal resistance (target <0.5 C/W) using thermal interface material. At 44 W average W-CDMA output and ~50% drain efficiency the part dissipates ~44 W into the heatsink. Junction-to-flange thermal resistance is approximately 0.4 C/W per NXP reference designs, so a well-cooled heatsink at 60°C flange temperature yields a junction around 78°C, well below the 200°C long-life reliability limit. Forced-air cooling is recommended in sealed enclosures.
Always sequence gate voltage (+2.8 V) BEFORE applying drain voltage (28 V) during turn-on, and reverse the order at turn-off. Violating this can cause uncontrolled drain current inrush that damages the die. Use a dedicated sequencing controller such as the NXP MC33063-based reference circuit. Also ensure the RF input is terminated in 50 Ω at all times - even a momentary open-circuit at the input can cause the part to oscillate and self-destruct. The drain voltage should never exceed 65 V even transiently.
Place the input matching network as close as possible to the gate lead with minimal trace length, and bond the source leads directly to the grounded copper flange with multiple vias to the inner ground plane. The drain output matching network should use coplanar waveguide or microstrip with controlled 50 Ω impedance, and the bias feed should be a quarter-wave stub choked off at the carrier frequency. The NXP application note AN1881 details the recommended reference PCB layout; deviations from this require thorough electromagnetic simulation.
When used in a multi-carrier amplifier environment, pay close attention to the intermodulation distortion (IMD) products generated by the MRF7S21150HSR3. Even-order products (IM2) fall close to the carrier and require DC bias isolation; odd-order products (IM3, IM5) generate out-of-band spurs that may need surface-acoustic-wave (SAW) filtering before the antenna. Digital pre-distortion (DPD) upstream can correct up to 5th-order distortion products, but the input signal must be kept within the device's linear region (<2 dB compression) for DPD to converge.
Información de cumplimiento
[DATA_NEEDED: RoHS, REACH, lead-free compliance certificates]. NXP NI-780 family parts historically used tin-lead die-attach for thermal-cycling reliability; check the latest material declaration document for RoHS Annex III exemption status.
