MRF8P20165WHSR5 - 165W RF Power LDMOS | NXP | Base Station
N.º de pieza: MRF8P20165WHSR5 ⚠ Última compra| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $117.66 | $117,66 |
| 10 | $105.89 | $1.058,90 |
| 100 | $94.13 | $9.413,00 |
| 500 | $85 | $42.500,00 |
| 1.000 | $78.42 | $78.420,00 |
MRF8P20165WHSR5 Descripción general
An RF power LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) transistor is a type of power MOSFET specifically engineered for high-frequency, high-power amplification. LDMOS devices occupy the power amplifier (PA) niche in the RF signal chain, sitting between the driver stage and the antenna in cellular base stations, broadcast transmitters, and industrial RF generators. They are valued for high breakdown voltage, excellent thermal performance, and high gain/density at RF frequencies.
Key features of the MRF8P20165WHSR5 include its dual-channel LDMOS architecture (FET RF 2CH), 65 V drain-source voltage rating, and operation across 1.98 GHz to 2.01 GHz (test point) with usable bandwidth from 1.88 GHz to 2.025 GHz. The device achieves 14.8 dB gain at 28 V Vdd test conditions, providing sufficient drive margin for Doherty amplifier topologies. The NI-780S ceramic flange package offers a low thermal-resistance path to the system heatsink, essential for sustained CW and W-CDMA operation at full rated output.
Technically, the MRF8P20165WHSR5 uses NXP's HV8 LDMOS process generation, which optimizes the trade-off between breakdown voltage, output capacitance, and ruggedness under mismatch. The W-CDMA specification (peak-to-average ratio of approximately 9.5 dB at 0.01% CCDF) drives the design toward high peak power capability with thermal capacity to absorb the resulting average dissipation. Two parallel transistor sections on a single die provide the 165 W peak envelope capability required for 3G base station lineups.
Typical applications include W-CDMA, LTE, and multi-carrier GSM base station power amplifiers in the 1880-2025 MHz band, covering DCS-1800, PCS-1900, and UMTS-2000 allocations. The device is also deployed in RF signal generators and industrial heating systems. Designers typically configure it in a Doherty amplifier for high-efficiency operation, with driver-stage predistortion to linearize the W-CDMA envelope.
When designing with this part, pay close attention to lead-to-flange flatness for proper heatsink mating, and follow NXP's application notes on input/output matching network topology for the 1.88-2.025 GHz band. The discontinued lifecycle status means designers should verify last-time-buy inventory and consider the R3 (larger reel) variant MRF8P20165WHSR3 as a drop-in substitute.
This page synthesizes distributor pricing, same-brand drop-in alternatives (MRF8P20165WHR3, MRF8P20165WHSR3, AFT18S230SR5), and practical design notes that go beyond the manufacturer datasheet's typical-application circuit.
Alternativas directas para MRF8P20165WHSR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF8P20165WHSR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8P20165WHR3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8P20165WHS
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF8P20165WH
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
AFT18S230SR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8P20165WHSR5 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS (Dual), Lateral N-Channel |
| Frequency Range | 1.88 GHz to 2.025 GHz (1880-2025 MHz) |
| Test Frequency | 1.98 GHz to 2.01 GHz |
| Output Power (Avg, W-CDMA) | 37 W |
| Output Power (Peak) | 165 W |
| Power Gain | 14.8 dB |
| Test Supply Voltage (Vdd) | 28 V |
| Test Current | 550 mA |
| Drain-Source Voltage Rating (Vdss) | 65 V |
| Encapsulado / Carcasa | NI-780S-4 (Case 465H-02) |
| Tipo de montaje | Chassis Mount / Flange |
| Número de pines | 5 |
| Packaging | Tape & Reel |
| Estado del ciclo de vida | Discontinued at DigiKey / Last Time Buy |
| Application | W-CDMA Base Station Power Amplifier |
Configuración de pines de MRF8P20165WHSR5
| Pin 1 | GATE1 — RF input gate, transistor section 1 |
| Pin 2 | GATE2 — RF input gate, transistor section 2 |
| Pin 3 | DRAIN1 — RF output drain, transistor section 1 |
| Pin 4 | DRAIN2 — RF output drain, transistor section 2 |
| Pin 5 | SOURCE — Source / Flange ground (DC and RF) |
Área de funcionamiento seguro
Aplicaciones típicas
MRF8P20165WHSR5 es adecuado para 6 aplicacións: W-CDMA Base Station Power Amplifier, LTE Base Station PA (Band 1/2/25), Multi-Carrier GSM Base Station, RF Signal Generator Output Stage, Industrial RF Heating Generator, Driver Stage for Higher-Power Amplifiers.
W-CDMA Base Station Power Amplifier
The MRF8P20165WHSR5's 165 W peak / 37 W average rating and 14.8 dB gain at 28 V make it well-suited for W-CDMA base station power amplifiers in the 1920-1980 MHz UMTS Band I uplink. Its 1880-2025 MHz instantaneous bandwidth covers UMTS Band I plus DCS-1800 and PCS-1900 allocations without band-switching filters. In a typical Doherty configuration, the device handles peak power with high efficiency at 8-9 dB back-off. Source: NXP MRF8P20165WHS datasheet typical application circuit.
Recomendado
LTE Base Station PA (Band 1/2/25)
The MRF8P20165WHSR5 supports LTE base station power amplifiers operating in Band 1 (1920-1980 MHz uplink), Band 2 (1850-1910 MHz uplink), and Band 25 (1850-1915 MHz uplink). Its 1880-2025 MHz bandwidth encompasses all three bands with margin, simplifying multi-band PA designs. The 14.8 dB gain provides margin for Doherty or single-ended topologies with digital predistortion (DPD) linearization. Thermal capacity at 28 V Vdd supports sustained LTE 100% resource-block loading.
Recomendado
Multi-Carrier GSM Base Station
For multi-carrier GSM base stations operating across 925-960 MHz or 1805-1880 MHz downlink, the MRF8P20165WHSR5 can be used at the top of its 1880-2025 MHz range. Its peak power capability handles the high crest factors of multi-carrier GSM signals (approximately 6-8 dB PAR). The 28 V supply rail aligns with standard cellular infrastructure PSU rails, simplifying power supply design. Pair with appropriate circulator and bandpass filter for duplexed operation.
Recomendado
RF Signal Generator Output Stage
The MRF8P20165WHSR5's wide instantaneous bandwidth (1880-2025 MHz) and flat gain make it useful as the output stage of RF signal generators for test-and-measurement equipment. Its 165 W peak envelope supports high-power CW testing of antennas, filters, and passive components. The 28 V rail simplifies integration with laboratory bench supplies. Use with appropriate directional coupler and attenuator for variable output power.
Recomendado
Industrial RF Heating Generator
Industrial RF heating systems operating at 1.8-2.0 MHz ISM-adjacent bands can leverage the MRF8P20165WHSR5's high peak power and rugged LDMOS construction for sustained CW operation. The 65 V Vdss rating provides headroom for VSWR mismatch conditions common in industrial heating loads. The NI-780S-4 flange package mounts directly to a water-cooled heatsink for continuous duty cycles. Note: the part is optimized for W-CDMA, so CW derating may be required.
Recomendado
Driver Stage for Higher-Power Amplifiers
As a driver stage in cascaded amplifier chains, the MRF8P20165WHSR5's 14.8 dB gain drives larger final-stage transistors such as the MRF8P2300W or similar 200+ W LDMOS parts in the 1880-2025 MHz range. Its linearity and stable gain across the band support cascade stability analysis. Place a small attenuator pad (3 dB) between driver and final stage to prevent instability from output impedance variation under VSWR mismatch.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF8P20165WHSR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF8P20165WHSR3 | MRF8P20165WHR3 | MRF8P20165WHS | MRF8P20165WH | AFT18S230SR5 |
|---|---|---|---|---|---|---|
| Package | NI-780S-4 (Case 465H-02) | NI-780S-4 - same | NI-780S-4 - same | NI-780S-4 - same | NI-780S-4 - same | NI-780S family ceramic - compatible |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1880-2025 MHz | 1880-2025 MHz | 1880-2025 MHz | 1880-2025 MHz | 1880-2025 MHz | 1805-1880 MHz |
| Output Power (Peak) | 165 W | 165 W | 165 W | 165 W | 165 W | 230 W (+39%) |
| Output Power (Avg, W-CDMA) | 37 W | 37 W | 37 W | 37 W | 37 W | 50 W (+35%) |
| Power Gain | 14.8 dB | 14.8 dB | 14.8 dB | 14.8 dB | 14.8 dB | 16.0 dB (+1.2 dB) |
| Test Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Voltage (Vdss) | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
| Packaging Format | Tape & Reel (7-inch) | Tape & Reel (13-inch) | Tape & Reel reverse (13-inch) | Bulk/Tray | Bulk/Tray | Tape & Reel (7-inch) |
Diferenciadores clave
- Wide instantaneous bandwidth 1880-2025 MHz covers UMTS Band I, DCS-1800, and PCS-1900 (frente a AFT18S230SR5)
- Dual-channel LDMOS architecture optimized for Doherty amplifier topology (frente a Single-section LDMOS competitors)
- 14.8 dB gain at 28 V provides margin for DPD linearization (frente a Lower-gain competitors (~12 dB))
- NXP HV8 process technology with proven field reliability (frente a AFT18S230SR5 (different NXP process generation))
Notas de diseño
Mount the MRF8P20165WHSR5 to a heatsink with thermal compound and torque the mounting screws to 0.5-0.7 N-m to ensure uniform thermal contact across the NI-780S-4 flange. Estimated: at 37 W average output with 8 dB PAR W-CDMA, average dissipation is approximately 55-65 W at 28 V Vdd; the flange-to-ambient thermal resistance of 0.15 C/W (with adequate heatsink) keeps junction rise below 15 C. Insufficient torque causes hot spots and premature failure.
Design input and output matching networks on low-loss substrate (Rogers RO4003C or similar) with controlled impedance (50 ohm microstrip). Per NXP application notes, gate bias should be applied through a quarter-wave bias line with RF choke, and the drain bias line requires a similar network plus bypass capacitors (100 pF, 1 nF, 10 uF) for stable DC supply. Keep RF trace lengths under lambda/16 to minimize parasitic losses.
Do not exceed Vdss of 65 V under any transient condition - voltage spikes from drain load mismatch can exceed DC supply by 30% or more. Install a TVS diode or gate protection circuit rated above 28 V operating voltage. Also ensure gate voltage stays within -0.5 V to +10 V to prevent gate oxide rupture. Always sequence gate voltage before drain voltage during power-up to prevent inrush damage.
For Doherty amplifier configurations, place the phase-matching line between carrier and peaking amplifiers within 5 degrees tolerance across the 1880-2025 MHz band. Use network analyzer calibration with the actual PCB substrate to verify matching. Insert a small isolation attenuator (2-3 dB) between driver and final stage to prevent feedback oscillation under VSWR mismatch. Reference NXP AN1977 for Doherty layout guidelines.
Use a low-impedance 28 V power supply with bulk capacitance of at least 1000 uF at the PCB to handle the pulsed current draw of W-CDMA signals. Per NXP recommendations, the supply should have less than 50 mV peak-to-peak ripple under full load to prevent PA gain modulation. Add a fuse or PTC resettable device rated for 2x continuous current for fault protection.
Información de cumplimiento
Compliance status not explicitly stated in verified distributor data. As an RF power LDMOS in a ceramic flange package with high-melting solder feedthroughs, full RoHS exemption under Annex III 7(a) typically applies to high-power RF transistors. Contact NXP for formal compliance certificate. AEC-Q100 not applicable - this is an infrastructure/telecom part, not automotive.
