MRF8S23120HR5 - 120W RF Power LDMOS, 2.3GHz, 28V | NXP
N.º de pieza: MRF8S23120HR5 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $75.92 | $75,92 |
| 10 | $70.5 | $705,00 |
| 100 | $65.1 | $6.510,00 |
| 500 | $58.4 | $29.200,00 |
| 1.000 | $52.1 | $52.100,00 |
MRF8S23120HR5 Descripción general
An RF power LDMOS transistor is a laterally-diffused MOSFET specifically engineered to handle tens to hundreds of watts of continuous radio-frequency power at frequencies from tens of megahertz to several gigahertz. Within the taxonomy, an LDMOS sits at the level of discrete semiconductor -> transistor -> MOSFET -> RF power MOSFET -> LDMOS. These devices form the final amplification stage in cellular base-station power amplifiers, microwave links, industrial RF heating, and aerospace telemetry systems. They offer a better gain-bandwidth product and thermal ruggedness than bipolar RF transistors, and lower conduction loss than GaAs solutions at this power tier.
Key features of the MRF8S23120HR5 include 65 V drain-source breakdown rating for high-voltage operation, integrated ESD protection, simple single-supply 28 V biasing, and broadband input/output matching friendly to Class AB operation. The device's gain flatness across the 2300-2400 MHz band makes it well suited for multi-carrier LTE signals where linearity matters.
Technical depth: The HV8 LDMOS process delivers 16 dB linear gain at 2.3 GHz with a typical output efficiency near 32% in CW Class AB. The internal package parasitic inductance is controlled through the NI-780H ceramic body, which also serves as the main thermal path. Built-in passive matching networks at the input ease external circuit design, while two bolt-down flanges provide low-thermal-resistance mounting directly to a heatsink or copper spreader. The device is rated for 28 W typical CW output at 28 V, with typical pulsed peak output at 120 W under narrow pulse conditions.
Typical applications include 2.3-2.4 GHz WiMAX and LTE small-cell/base-station power amplifiers, RF plasma drivers, industrial microwave heating, telemetry transmitters, and radar pulse chains. The 28 V rail and 50 ohm interface simplify integration into standard Doherty or push-pull amplifier architectures.
A key design consideration is heatsinking: the ceramic flanged package relies on the system chassis or external heatsink for thermal management. Without adequate heatsinking, junction temperature can exceed 200 C and degrade long-term reliability. Designers should mount the device to a machined aluminum or copper cold plate with a thin layer of thermal grease.
This page synthesizes distributor pricing (DigiKey, Mouser, LCSC), drop-in alternatives within the NI-780 family, and practical RF design notes not found in the manufacturer datasheet alone.
Alternativas directas para MRF8S23120HR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF8S23120HSR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF8S23120H
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF8S18230HR5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF8S23120HR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF8S23120HR5 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Status | Obsolete |
| Tipo de transistor | N-Channel LDMOS |
| Technology | HV8 LDMOS |
| Frequency | 2.3 GHz (operating band 2300-2400 MHz) |
| Gain | 16 dB (typical at 2.3 GHz, 28 V) |
| Drain-Source Voltage (Vdss) | 65 V |
| Test Voltage | 28 V |
| Test Current | 800 mA |
| Continuous Output Power (CW) | 28 W |
| Pulsed Output Power | 120 W (peak under narrow pulse) |
| Encapsulado | NI-780H-2L (SOT-957A) ceramic flanged |
| Tipo de montaje | Chassis / bolt-down flange |
| Application Band | 2.3-2.4 GHz ISM / WiMAX / LTE |
Configuración de pines de MRF8S23120HR5
| Pin 1 | DRAIN (RF OUT) — RF output / drain terminal via ceramic body |
| Pin 2 | GATE (RF IN) — RF input / gate terminal via ceramic lead |
| Pin 3 | SOURCE (FLANGE) — Source / ground via mounting flange |
| Pin 4 | FLANGE — Mechanical and thermal ground (bolt-down) |
DC Área de funcionamiento seguro
Aplicaciones típicas
MRF8S23120HR5 es adecuado para 6 aplicacións: 2.3 GHz LTE / WiMAX Base-Station Power Amplifier, Industrial Microwave Heating / Plasma Driver, Aerospace / UAV Telemetry Transmitter, Radar Pulse Amplifier Driver, 2.4 GHz ISM Band Digital Video / Data Link, Medical / RF Ablation Source.
2.3 GHz LTE / WiMAX Base-Station Power Amplifier
The MRF8S23120HR5 serves as the final or driver stage in 2.3-2.4 GHz LTE band 38 and WiMAX base-station amplifiers. With 16 dB gain at 2.3 GHz, 28 V single-rail operation, and 28 W CW / 120 W pulsed output, it integrates directly into Class AB and Doherty amplifier architectures without requiring complex multi-rail supplies. Its NXP HV8 LDMOS technology provides the linearity required for multi-carrier LTE signals while keeping the BOM cost below GaN equivalents. The NI-780H ceramic flange conducts heat efficiently to a chassis-mounted cold plate, supporting continuous duty operation in cellular infrastructure. Designers pair it with 50 ohm microstrip/stripline matching on Rogers RO4350B substrates for production-ready modules.
Recomendado
Industrial Microwave Heating / Plasma Driver
At 2.3-2.4 GHz and 28 W continuous output, the MRF8S23120HR5 is a robust source for industrial microwave heating applicators and RF plasma drivers. Its 65 V drain-source breakdown rating gives substantial headroom for the voltage transients produced by mismatched plasma loads, and the NI-780H flange supports continuous duty at elevated junction temperatures. The broadband nature of LDMOS at 2.45 GHz ISM is well-documented for desiccation, sterilization, and plasma ignition systems. The single 28 V supply eliminates the high-voltage rail complexity typical of vacuum-tube RF sources, simplifying the cabinet-level power supply design.
Recomendado
Aerospace / UAV Telemetry Transmitter
Lightweight UAV and aerospace telemetry links in the 2.3-2.4 GHz band benefit from the MRF8S23120HR5's high power density and bolt-down thermal interface. At 120 W pulsed, the device provides link-margin headroom for long-range telemetry or command links, while 16 dB gain keeps the driver chain short. The NI-780H ceramic package withstands the vibration profile of airborne platforms when properly clamped, and the 28 V rail matches typical UAV power bus architectures. Mission durations up to several hours are feasible with proper heatsinking and pulsed-duty-cycle operation.
Recomendado
Radar Pulse Amplifier Driver
S-band radar systems operating near 2.3 GHz use the MRF8S23120HR5 as a pulse-power driver delivering 120 W peak under narrow pulse conditions per the NXP datasheet. The HV8 LDMOS technology handles the high peak-to-average power ratio of radar pulses while maintaining flat gain across the pulse width. The 50 ohm interface allows direct integration between the waveform generator and the final-stage TWT or magnetron replacement. Designers operate the device well below its CW rating to extend junction-temperature cycling life in pulsed service.
Recomendado
2.4 GHz ISM Band Digital Video / Data Link
Unlicensed 2.4 GHz digital video and data links operating near the upper edge of the ISM band use the MRF8S23120HR5 to deliver the 28 W CW output required for long-range point-to-point links. Its 16 dB gain and broadband input matching simplify the transmitter chain, and the LDMOS linearity supports modern OFDM and 64-QAM modulations. The NI-780H flange enables outdoor weatherized enclosures with external heatsinking. For regulatory-compliance Class AB operation, output power is typically back-off 2-3 dB to meet spectral mask requirements.
Recomendado
Medical / RF Ablation Source
RF ablation and diathermy systems operating at 2.45 GHz ISM use the MRF8S23120HR5 as a stable 28 W CW source with controlled output into variable tissue loads. The LDMOS technology's tolerance for load-mismatch (VSWR up to 10:1 with reduced power) is essential for medical safety where antenna contact may vary. The single 28 V supply and chassis-mountable NI-780H package integrate cleanly into medical-device enclosures with appropriate isolation barriers. NXP's long-term reliability data on the HV8 process supports medical device qualification paths.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF8S23120HR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF8S23120HSR5 | MRF8S23120H | MRF8S18230HR5 | MRF8S23120HR3 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L (SOT-957A) | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same |
| Frequency | 2.3 GHz | 2.3 GHz | 2.3 GHz | 1.8 GHz | 2.3 GHz |
| Gain (typ) | 16 dB | 16 dB | 15.5 dB (lower gain bin) | 17 dB at 1.8 GHz | 16 dB |
| CW Output Power | 28 W | 28 W | 28 W | 30 W | 28 W |
| Pulsed Peak Power | 120 W | 120 W | 120 W | 120 W | 120 W |
| Test Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Breakdown (Vdss) | 65 V | 65 V | 65 V | 65 V | 65 V |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
Diferenciadores clave
- 28 V single-rail operation (frente a GaN HEMT alternatives (e.g., NXP Airfast AFSC5G series))
- Lower BOM cost at sub-3 GHz (frente a Ampleon BLF2425M7LS250P 2.45 GHz LDMOS)
- Mature HV8 LDMOS reliability data (frente a Newer Airfast GaN platforms)
Notas de diseño
Estimated: At 28 W CW output into 50 ohm load with 32% drain efficiency, internal power dissipation is roughly 60 W. The NI-780H ceramic flange must be bolted to a machined aluminum or copper cold plate with thermal grease; without it, junction temperature will exceed 200 C and trigger thermal shutdown or permanent degradation. For continuous-duty 28 W CW service, target a system thermal resistance below 0.5 C/W between the device flange and the chassis cold plate, verified by thermocouple measurement at the flange.
RF input and output traces must use 50 ohm controlled-impedance microstrip or stripline on a low-loss substrate such as Rogers RO4350B (dielectric constant 3.48, loss tangent 0.0027). Place DC-bias decoupling capacitors as close as possible to the gate and drain leads to suppress low-frequency oscillation. A 10 uF electrolytic plus 100 nF ceramic in parallel at each bias feedthrough is recommended. Source grounding must use multiple short bond wires or ribbon to the flange to minimize common-source inductance.
Do not operate the MRF8S23120HR5 above 28 V VDD without re-characterizing efficiency and gain - the datasheet specifies 28 V as the test condition, and over-voltage operation accelerates drain-current collapse. The device has no internal over-voltage protection. Confirm that your 28 V supply is current-limited and includes in-rush protection to prevent over-current during warm-up. In pulsed service, monitor the duty cycle carefully; continuous duty at 120 W peak will exceed the CW thermal limit within seconds.
Use a copper spreader or coin directly under the NI-780H flange to distribute heat into the chassis. Keep RF input and output traces physically separated to avoid feedback oscillation; a small gate-series resistor (1-10 ohm) often stabilizes marginal layouts. For Class AB bias, target 800 mA quiescent current at 28 V per the datasheet test condition, and add a potentiometer or digital-to-analog bias control for thermal compensation over temperature.
Información de cumplimiento
Obsolete part; full compliance data should be confirmed via the latest NXP product-change notification or Rochester Electronics documentation before volume use.
