MRF9002NR2 - 1GHz, 2W, 26V RF Power MOSFET | NXP Semiconductors
N.º de pieza: MRF9002NR2 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $16.2 | $162,00 |
| 100 | $13.85 | $1.385,00 |
| 500 | $12.1 | $6.050,00 |
| 1.000 | $10.75 | $10.750,00 |
MRF9002NR2 Descripción general
An RF MOSFET is a field-effect transistor whose geometry, package, and matching structures are tuned to deliver useful power gain at radio frequencies from HF through microwave bands. LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) variants such as this one sit inside the broader hierarchy of power transistors (LDMOS -> RF power MOSFET -> discrete RF transistor -> RF semiconductor), and they have largely displaced older bipolar and silicon-FET parts in 26 V cellular base-station and broadband-instrumentation transmitters because of their high gain, broadband response, and ruggedness under VSWR mismatch.
Key specifications include 18 dB minimum power gain at 960 MHz / 25 mA bias, 37 dBm (5 W) typical pulsed output capability, a 65 V maximum drain-source rating, N-channel enhancement-mode operation, and a PFP-16 ceramic power flat pack with a solderable backside thermal contact. The low input capacitance and high transition frequency simplify matching from HF through L-band, while the common-source configuration simplifies PCB layout by allowing grounded-source tabs and a single positive drain feed.
Typical applications include VHF/UHF broadband linear amplifiers, 900 MHz ISM-band and cellular base-station driver stages, instrumentation RF power modules, and general-purpose 26 V common-source RF amplifiers. The broadband response also makes the part attractive for laboratory amplifiers, RF laboratory signal sources, and test-and-measurement front-ends where a single part must cover wide frequency ranges without re-matching.
When designing with this device, bias the gate at approximately 2-4 V above threshold (around 25 mA quiescent current) for Class-AB operation, and ensure the heatsink/PCB copper area under the PFP-16 backside contact meets thermal-resistance budgets so the junction stays below the rated maximum. Adequate input and output matching networks are mandatory to realize the datasheet's 18 dB gain figures.
This page synthesizes distributor pricing, drop-in alternative guidance, and practical design notes sourced from distributor pages and the manufacturer datasheet - engineering context not always visible on a single distributor page.
Alternativas directas para MRF9002NR2 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
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MRF9002NR2
✅ Sustitución directa✓ En stock
$10.75 / unidad
Ver hoja de datos →MRF9002
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MRF9002NR2 Valores máximos y características eléctricas
| Tipo de transistor | N-Channel LDMOS (Lateral MOSFET) |
| Operating Mode | Enhancement Mode |
| Configuration | Single, Common Source |
| Drain-Source Voltage (Max) | 65 V |
| Test Voltage | 26 V |
| Test Frequency | 960 MHz |
| Test Current (Bias) | 25 mA |
| Power Gain | 18 dB (at 960 MHz, 25 mA) |
| Output Power (P1dB / Pulsed) | 37 dBm / 5 W (typical pulsed) |
| Maximum Continuous Power | 2 W (datasheet headline rating) |
| Frequency Range | Up to 1000 MHz |
| Encapsulado | PFP-16 Power Flat Pack (16-pin) |
| Tipo de montaje | Surface Mount (with solderable backside contact) |
| Lead Free | Lead Free (per DigiKey listing) |
Configuración de pines de MRF9002NR2
| Pin 1 | DRAIN — Drain (RF output, with DC feed) |
| Pin 2 | DRAIN — Drain (RF output, with DC feed) |
| Pin 3 | GATE — Gate (RF input, with DC bias) |
| Pin 4 | GATE — Gate (RF input, with DC bias) |
| Pin 5 | SOURCE — Source (ground) |
| Pin 6 | SOURCE — Source (ground) |
| Pin 7 | NC — Not connected / no internal connection (per datasheet PFP-16 pin map) |
| Pin 8 | NC — Not connected / no internal connection (per datasheet PFP-16 pin map) |
| Pin 9 | SOURCE — Source (ground) |
| Pin 10 | SOURCE — Source (ground) |
| Pin 11 | GATE — Gate (RF input, with DC bias) |
| Pin 12 | GATE — Gate (RF input, with DC bias) |
| Pin 13 | DRAIN — Drain (RF output, with DC feed) |
| Pin 14 | DRAIN — Drain (RF output, with DC feed) |
| Pin 15 | SOURCE — Source (ground) |
| Pin 16 | SOURCE — Source (ground) |
Aplicaciones típicas
MRF9002NR2 es adecuado para 6 aplicacións: 900 MHz Cellular Base-Station Driver, Broadband HF/UHF Linear Amplifier, 900 MHz ISM-Band RF Power Stage, RF Instrumentation Amplifier Module, Two-Way Radio Driver/Output Stage, Military/Aerospace Broadband RF Amplifier (Defensive Subsystem).
900 MHz Cellular Base-Station Driver
The MRF9002NR2's 18 dB power gain at 960 MHz and 26 V rail make it well-suited as a driver stage in 900 MHz cellular base-station transmitter chains. Place the device between the previous gain block and a higher-power MRF6S-class output LDMOS; its 2 W output can deliver 0.5-1 W after inter-stage loss margin, and the PFP-16 backside contact handles the resulting thermal dissipation. Compared with a discrete bipolar transistor solution, the LDMOS architecture gives higher small-signal gain across the band and reduces the number of bias-network components.
Recomendado
Broadband HF/UHF Linear Amplifier
With broadband performance up to 1000 MHz and 18 dB power gain, the MRF9002NR2 is a natural fit for broadband linear amplifier modules used in instrumentation and laboratory RF signal sources. Place the part in a common-source configuration with input/output matching networks covering HF through the lower UHF band; the resulting amplifier has enough gain (typically 17-18 dB) to drive a small post-amplifier or attenuator chain. The enhancement-mode N-channel gate requires a positive gate bias of 2-4 V above threshold, simplifying bias sequencing compared with depletion-mode parts.
Recomendado
900 MHz ISM-Band RF Power Stage
ISM-band applications around 900 MHz (RFID, telemetry, industrial telemetry links, short-range data radios) benefit from the MRF9002NR2's combination of broadband response and 26 V operation. The 2 W output power comfortably drives a low-gain antenna, antenna filter, or downstream power amplifier; 18 dB of small-signal gain reduces the RF drive level required from the preceding stage, allowing lower-power upstream circuitry. The PFP-16 footprint and solderable backside contact give good thermal performance in compact modules where forced-air cooling is impractical.
Recomendado
RF Instrumentation Amplifier Module
Test-and-measurement front-ends used in RF laboratories frequently require a broadband 1-2 W amplifier block covering tens of MHz to roughly 1 GHz. The MRF9002NR2 fulfills that role: its 18 dB broadband gain and 50 ohm-ish common-source topology permit a single part to act as a small-signal booster or low-power driver in instrumentation signal chains. The lateral N-channel LDMOS construction gives low memory-effect distortion relative to bipolar transistors, which is critical when the amplifier is used inside feedback loops of automatic test equipment.
Recomendado
Two-Way Radio Driver/Output Stage
Land-mobile-radio, amateur-radio, and commercial two-way transmitters operating around 900 MHz can use the MRF9002NR2 as either a driver stage preceding a high-power LDMOS or as the final amplifier for low-power handheld/mobile equipment (≤ 2 W output). The high gain reduces the required RF drive from the synthesizer/exciter, improving phase-noise and spurious performance. The 65 V drain-source rating provides margin for inductive load transients at the antenna filter output, increasing survivability against antenna mismatch events.
Recomendado
Military/Aerospace Broadband RF Amplifier (Defensive Subsystem)
Defensive electronic-warfare subsystems and broadband jammers require small-signal broadband drivers before their high-power output stages. The MRF9002NR2, rated for operation up to 1 GHz with 18 dB gain and a 65 V transient-rated drain-source voltage, fits cleanly as a driver/mid-power gain block. Its PFP-16 ceramic package is hermetic-friendly; designers building ruggedized chassis can mount the device on a copper-moly heatsink directly under the solderable backside contact, ensuring the junction temperature stays within safe limits under continuous duty.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF9002NR2 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF9002 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Package | PFP-16 | PFP-16 |
| Drain-Source Voltage (Max) | 65 V | 65 V |
| Test Voltage | 26 V | 26 V |
| Test Frequency | 960 MHz | 960 MHz |
| Power Gain | 18 dB | 18 dB |
| Test Current (Bias) | 25 mA | 25 mA |
| Output Power (Pulsed) | 37 dBm / 5 W (typical pulsed) | 37 dBm / 5 W (typical pulsed) |
| Maximum Continuous Power | 2 W | 2 W |
| Operating Mode | Enhancement Mode (N-channel) | Enhancement Mode (N-channel) |
Diferenciadores clave
- 18 dB broadband power gain in a single PFP-16 stage (frente a MRF9002 (base MPN))
- 2 W continuous / 5 W pulsed operation in a small PFP-16 footprint (frente a Higher-power NXP MRF6S9045NR1)
- Lateral N-channel enhancement-mode LDMOS technology (frente a Generic RF bipolar transistors)
Notas de diseño
Estimated: at 2 W RF output and ~22% DC-to-RF efficiency in Class-AB, the MRF9002NR2 dissipates roughly 7 W of heat at the die. The PFP-16 ceramic package relies on a large copper or copper-moly heatsink directly under the solderable backside contact (manufacturer datasheet thermal data, see 'PFP-16 Power Flat Pack' section). Without a minimum of approximately 3-5 sq.in. of 1 oz copper (or a thermal-via array plus copper-moly spreader), the junction will exceed the rated 200 C maximum during continuous RF drive. Mount the part flat against a smooth, solderable surface and use a thermal interface material if a separate heatsink is bolted on top.
The MRF9002NR2 datasheet recommends a common-source PCB layout with the gate leads kept as short as possible and isolated from the drain trace on the top layer. Place input and output matching networks on the same side of the PCB as the part to minimize path length; route the drain feed through a lambda/4 microstrip or discrete L-section so it presents an RF short at the drain pin while carrying DC. The PFP-16's multiple source pins (6 of 16) should all be bonded to a continuous ground pour on the top layer and stitched through thermal vias to a solid ground plane on layer 2 to keep source-lead inductance low and prevent odd-mode instabilities above ~600 MHz.
Bias the MRF9002NR2 from a regulated 26 V DC rail whose ripple and noise stay below 50 mV peak-to-peak to avoid being modulated onto the RF output. Sequence the gate supply (VGS) before the drain supply (VDS) during turn-on and reverse the sequence at turn-off to prevent partial turn-on events that can cause in-rush currents or, in extreme cases, device damage. Add a small gate-source resistor (10-100 kohm) at the gate lead to provide an RF ground at the gate for bias-T networks and to damp any tendency toward low-frequency oscillation; verify stability with the manufacturer's recommended bias-T reference design before finalizing the BOM.
Do not exceed the 65 V VDS maximum, even momentarily: inductive loads can produce voltage transients well above the supply rail during antenna VSWR excursions. Add an RF clamp or transient suppressor across the drain if the antenna system can present worst-case mismatch. Verify pin orientation against the PFP-16 dot marker before reflow - the PFP-16 family has a non-symmetric pinout and rotated parts will fail at first power-up. Finally, confirm that the chosen heatsink thermal design keeps Tj below 150 C under continuous operation; the ceramic package can run much hotter than a plastic SMD equivalent without visible distress, masking premature-aging failures until field deployment.
Información de cumplimiento
Lead-free confirmed per DigiKey product listing; RoHS, REACH, halogen-free, and conflict-mineral compliance status not stated in the verified web data and require confirmation from the manufacturer datasheet's environmental section before deployment in EU/Japan markets.
