MRF9060MR1 - 60W 945MHz Lateral N-Channel RF Power MOSFET | NXP
N.º de pieza: MRF9060MR1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $42 | $42,00 |
| 10 | $38.5 | $385,00 |
| 100 | $34.2 | $3.420,00 |
| 500 | $30.1 | $15.050,00 |
| 1.000 | $26.8 | $26.800,00 |
MRF9060MR1 Descripción general
An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor specifically engineered to deliver high RF output power with high gain and efficiency at frequencies from HF through microwave. Lateral N-channel enhancement-mode RF MOSFETs belong to the broader RF power transistor family, which sits within RF & wireless discrete semiconductors. They are commonly deployed in the final stage (PA) of base-station transmitters, industrial RF generators, and broadband amplifier chains where common-source Class AB operation provides linear amplification of AM, FM, or complex digitally modulated signals.
Key features include 60 W continuous-wave output power at 945 MHz, 18 dB typical power gain at 945 MHz with 26 V supply, broadband performance from DC to 1.0 GHz, and a 26 V DC drain-to-source rating typical of base-station infrastructure. The lateral die topology offers high gain and large-signal ruggedness compared to vertical MOSFETs and bipolar transistors. The TO-270-2 industry-standard plastic flanged package supports bolt-down thermal mounting onto an external heatsink or chassis spreader, enabling reliable CW operation across the full 60 W envelope.
The MRF9060MR1 uses NXP's sub-micron RF MOSFET process with an integrated gate ESD protection network and stable threshold targeting Class AB biasing. Its high gain (~18 dB) reduces the driver-stage gain requirement, simplifying the overall amplifier BOM. Lateral geometry combined with a thermally-enhanced ceramic/ plastic TO-270 flange yields an SOA wide enough to survive mismatched-load (VSWR) transients typical of antenna-port faults in base-station service.
Typical applications include 900 MHz cellular base-station power amplifiers, industrial RF heating and plasma generators, FM broadcast translators, broadband Class A/AB linear amplifiers, and military/aerospace RF links. Its broadband response also makes it suitable for general-purpose laboratory RF power amplifiers covering 100 MHz to 1000 MHz.
When designing with the MRF9060MR1, source-lead grounding through the package flange is critical - the TO-270 tab is the primary thermal AND electrical ground path. Use copper-clad PCB or copper spreader with thermal interface material rated for sustained 70 W dissipation, and keep gate and drain bond-wire traces as short as possible to minimize parasitic feedback above 800 MHz.
This page synthesizes NXP/Freescale datasheet parameters, distributor pricing, and drop-in alternative MPNs not always co-listed on DigiKey/Mouser catalog pages, providing one reference for sourcing and second-source decisions.
Alternativas directas para MRF9060MR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRF9060MBR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRF9060MR1
✅ Sustitución directa✓ En stock
$26.8 / unidad
Ver hoja de datos →MRF9060MR1 Valores máximos y características eléctricas
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Sub-Micron Lateral MOSFET |
| Application Band | HF/VHF/UHF, up to 1.0 GHz |
| Test Frequency | 945 MHz |
| Continuous Output Power (Pout) | 60 W |
| Power Gain (Gps) | 18 dB (typ) at 945 MHz, 26 V |
| Drain-Source Voltage (VDSS) | 26 V |
| Drain Current (ID) | 450 mA (per DigiKey marketplace listing) |
| Operating Mode | Class A/AB, common-source CW |
| Encapsulado | TO-270-2 (flanged plastic, 2 leads + tab) |
| Package Style | Industry-standard flanged RF power envelope |
| Tipo de montaje | Chassis/Heatsink mount, through-hole flange |
| Lead Configuration | Gate, Drain leads; Tab = Source/Ground |
Configuración de pines de MRF9060MR1
| Pin 1 | Gate — Gate input (RF gate bias) |
| Pin 2 | Drain — Drain (RF output / DC supply) |
| Pin 3 | Source / Tab — Source and thermal mounting tab (ground) |
Área de funcionamiento seguro - DC
Aplicaciones típicas
MRF9060MR1 es adecuado para 7 aplicacións: 900 MHz Cellular Base-Station Power Amplifier, Industrial RF Heating and Plasma Generator, FM Broadcast Translator / VHF Power Amplifier, Broadband HF/VHF/UHF Linear Amplifier (Test/Instrumentation), Two-Way Radio / Land Mobile Radio Base Amplifier, Amateur Radio (Amateur Radio) 900 MHz Linear Amplifier, Avionics / Military VHF-UHF Power Amplifier.
900 MHz Cellular Base-Station Power Amplifier
The MRF9060MR1 fits 900 MHz base-station final-stage PA designs because its 60 W CW output and 18 dB power gain at 945 MHz (with 26 V VD) match the cellular repeater/GSM/LTE band-8 power envelope while keeping driver-stage gain requirements modest. Placed in a common-source Class AB configuration with an L-C matching network at the drain, it delivers ~60 W saturated output with reasonable linearity for FM or simple digital modulations. Its DC-to-1.0 GHz broadband response also simplifies multi-band repeater designs that need to cover both uplink and downlink segments of the band. Heatsink design must spread the 26 V x Idc bias dissipation (typically 8-12 W Class AB idle) plus 60 W RF output across the TO-270 flange for full-duty-cycle service.
Recomendado
Industrial RF Heating and Plasma Generator
In industrial RF plasma generators and RF heating systems operating at 13.56 MHz or 27 MHz ISM bands, the MRF9060MR1's lateral MOSFET topology and high gain at low-VHF give it the ruggedness needed to drive mismatched industrial loads. The 26 V VD simplifies the gate-drive supply tree compared to 50 V-class parts. With 60 W of CW output, the part can excite a 50-ohm load via a transformer or impedance-matching pi-network; pulsed RF heating applications can over-drive the part below its CW SOA. The TO-270 flange is bolted to a copper spreader so the device tolerates long CW on-times in factory environments where heat removal and stable gain are paramount.
Recomendado
FM Broadcast Translator / VHF Power Amplifier
The MRF9060MR1 covers 88-108 MHz FM broadcast bands and adjacent VHF translators because its broadband DC-to-1.0 GHz response comfortably spans the entire FM band without retuning. 60 W CW output drives a low-pass filter and antenna for community-radio translators, and the 18 dB gain keeps the upstream exciter to milliwatt drive levels. Class A/AB biasing provides the linearity required for FM modulation while keeping thermal dissipation manageable in a compact rack-mount translator chassis. The TO-270-2 envelope screws cleanly onto a standard chassis heat-spreader used in commercial broadcast transmitters.
Recomendado
Broadband HF/VHF/UHF Linear Amplifier (Test/Instrumentation)
For laboratory broadband RF amplifiers covering 1 MHz to 1000 MHz, the MRF9060MR1 is an attractive final-stage device: 18 dB gain, broadband response, and 60 W output drive high-power test loads, RF probes, or antenna-range feeds. In a 50-ohm test amplifier, the part operates Class A for maximum linearity, dissipating ~80 W DC for 60 W RF output. The TO-270-2 flange bolts to a forced-air-cooled heat-spreader inside the rack enclosure. Engineers use this topology for EMC immunity/EMI testing where 1-1000 MHz sweep power at the antenna port requires a flat, predictable RF power source.
Recomendado
Two-Way Radio / Land Mobile Radio Base Amplifier
Land mobile radio (LMR) base stations operating in the 800-900 MHz band use the MRF9060MR1 as a 60 W final PA in P25, DMR, and conventional FM repeater installations. Its 26 V supply rail and TO-270 flange match legacy 25-30 V base-station DC plants, simplifying integration with battery-backup systems. The 18 dB gain reduces the need for an intermediate driver stage between the exciter and final PA, lowering BOM cost and improving MTBF. Mismatched-antenna VSWR events are absorbed within the part's lateral MOSFET ruggedness and flange thermal mass, which is a real-world benefit at remote tower-top sites.
Recomendado
Amateur Radio (Amateur Radio) 900 MHz Linear Amplifier
Amateur radio operators building 33 cm / 902-928 MHz amplifiers choose the MRF9060MR1 for its 60 W output and 18 dB gain - enough to drive a 4-CX250B-style tube or to be used as a final on a multimode digital ATV/SSB station. Class A/AB biasing preserves linearity for SSB and digital modes (D-ATV, FT8 via the 902 MHz segment). The TO-270-2 envelope bolts directly to commercial amateur-grade heatsinks; the 26 V supply is conveniently sourced from a common 24 V LDO/boost supply. Reusing NXP's published broadband test circuit minimizes the amateur-radio development cycle.
Recomendado
Avionics / Military VHF-UHF Power Amplifier
Military and avionics RF links operating in the 225-400 MHz and 960-1215 MHz bands use the MRF9060MR1 as part of legacy and newly refreshed transmitter chains because the part is qualified under NXP/Motorola's MIL-spec screening heritage. 60 W of CW power suits tactical radio repeaters and IFF interrogator driver stages. The TO-270 flange tolerates the vibration and thermal-cycling profiles of airborne platforms when bolted through a vibration-isolating mount and a sufficiently massive cold-plate. Designers planning modern MIL upgrades should check NXP's online MRF9060M datasheet for current screening options.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF9060MR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRF9060MBR1 | MRF9060MR1 (Rochester franchised) |
|---|---|---|---|
| Package | TO-270-2 | TO-270-2 - same | TO-270-2 - same |
| Brand | NXP Semiconductors (formerly Freescale/Motorola) | NXP Semiconductors | NXP Semiconductors |
| Test Frequency | 945 MHz | 945 MHz | 945 MHz |
| Output Power (CW) | 60 W | 60 W | 60 W |
| Power Gain (Gps) | 18 dB | 18 dB | 18 dB |
| Drain-Source Voltage (VDSS) | 26 V | 26 V | 26 V |
| Transistor Type | N-Channel Lateral MOSFET | N-Channel Lateral MOSFET | N-Channel Lateral MOSFET |
| Screening / Variants | Standard | Alternate screening | Rochester-cert, same die |
Diferenciadores clave
- Highest-volume commercially-screened 60 W 945 MHz 26 V MRF device (frente a MRF9060MBR1 (same datasheet))
- NXP's loyal TO-270 flanged platform (frente a Higher-frequency NXP MRFE6xxx family)
- Hassle-free franchised stock via Rochester Electronics (frente a Open-market gray market)
Notas de diseño
Mount the TO-270-2 flange to a copper or copper-clad spreader with thermal compound rated for sustained temperatures above 100C. Estimated: at 26 V x Idc ~ 1.0 A for Class A/AB operation at 60 W CW, average DC dissipation is roughly 100-130 W; the flange thermal path must keep Tj below 200C per the device SOA. Use 4-bolt mounting into a stiff chassis to keep thermal impedance flat under vibration.
Keep gate and drain bond-wire traces extremely short and use 50-ohm microstrip or stripline between the part's leads and the matching network. Above 800 MHz, even a few nH of trace inductance can build an unintended feedback loop and cause oscillation. Decouple the 26 V rail with at least a 1 uF ceramic plus 10 uF tantalum or electrolytic bulk, placed within 25 mm of the drain lead.
Do not float the source tab - the TO-270 flange is the electrical source ground. Floating or poor grounding paths cause the device to oscillate or fail catastrophically due to gate-drain feedback through the case. Always bias gate from a stable low-impedance supply using the manufacturer's recommended gate-bias network and a sequencing circuit to ensure gate comes up before drain.
Place the input (gate-side) matching network on one side of the device and the output (drain-side) matching network on the other side, with a grounded shield or via wall between them. Ensure the source tab is bolted before any RF is applied; using a torque wrench per the datasheet ensures repeatable thermal impedance. Add a forward/reflected power coupler at the output to protect against antenna VSWR events.
Información de cumplimiento
Detailed RoHS/REACH/lead-free declarations were not included in the verified web data. MRF9060MR1 is a legacy Motorola/Freescale RF power MOSFET; for aerospace/defense hardware confirm compliance via the current NXP/Motorola material-declaration sheet.
