MRFE6S9135HR5 - 39W 940MHz RF Power LDMOS Transistor | NXP
N.º de pieza: MRFE6S9135HR5 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $98.17 | $98,17 |
| 10 | $92.4 | $924,00 |
| 100 | $86.5 | $8.650,00 |
| 500 | $81.2 | $40.600,00 |
| 1.000 | $76.8 | $76.800,00 |
MRFE6S9135HR5 Descripción general
What is an LDMOS RF Power Transistor: an LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) transistor is a power-device architecture engineered specifically for high-frequency RF amplification. It sits within the broader taxonomy: RF power transistor -> discrete semiconductor -> RF power amplifier building block. Compared to bipolar RF power transistors, LDMOS offers higher gain, better thermal stability, simpler single-polarity biasing, and superior ruggedness under mismatch, which is why it dominates cellular base-station PA and high-power ISM transmitter designs.
Key features include a 66 V drain-source voltage rating, 21 dB typical gain at 940 MHz, high efficiency and broadband operation, integrated ESD protection, and a thermally enhanced NI-880 ceramic flange package with bolt-down mounting. The Ni-880 footprint exposes the die flange directly to the heatsink, achieving very low thermal resistance for sustained CW operation. Internal matching on input and output simplifies board-level design while still permitting external matching network optimization for the 900-1000 MHz band.
The MRFE6S9135HR5 uses NXP's sixth-generation high-voltage LDMOS process, providing excellent gain flatness across the 900-1000 MHz operating band and robust tolerance to load VSWR. The device is characterized for both pulsed and CW operation, making it flexible for radar, Class A/AB amplifier stages, and digital video broadcast transmitters. Designers value the predictable large-signal performance, which simplifies the gain and efficiency trade-off in the output stage.
Typical applications include RFID reader transmitters, UHF digital TV exciters, industrial heating RF generators, scientific particle accelerator drivers, medical RF ablation equipment, and avionics/ATC transponder drivers. The 940 MHz band also covers license-free ISM equipment used in material processing and plasma generation.
When designing with this part, ensure proper RF bypassing on the drain bias line with 100 ohm ferrite beads and 100 nF / 10 uF decoupling. Use a bolted copper or aluminum heatsink with thermal compound; do not rely on PCB copper alone for continuous 39W dissipation.
This page synthesizes NXP datasheet specifications, distributor pricing, NI-880 footprint-compatible drop-in alternatives, and RF amplifier design notes not consolidated in the manufacturer datasheet alone.
Alternativas directas para MRFE6S9135HR5 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRFE6S9130HR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRFE6S9140HR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRFE6S9125HR5
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRFE6S9135NR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BLF884P
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRFE6S9135HR5 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS (N-Channel) |
| Drain-Source Voltage (Vdss) Rating | 66 V |
| Test Voltage (VDD) | 28 V |
| Quiescent Test Current | 1 A |
| Operating Frequency | 940 MHz (typ), up to 1000 MHz |
| Output Power (Pout) | 39 W (CW, typical at 940 MHz) |
| Power Gain | 21 dB (typical at 940 MHz, 28 V) |
| Current Rating | 10 µA (data-sheet reference, see datasheet) |
| Lead Free Status | Lead Free |
| Encapsulado | NI-880H-2L (NI-880) ceramic flange |
| Tipo de montaje | Bolt-down chassis mount / surface flange |
| Configuration | Single-ended, common source |
| Input Matching | Internal input matching (typical) |
| Output Matching | Internal output matching (typical) |
| Estado RoHS | Compliant (per NXP product page) |
| Technology | NXP Gen-6 HV LDMOS |
| Application Band | 900-1000 MHz ISM / UHF |
Configuración de pines de MRFE6S9135HR5
| Pin 1 | Gate (Input) — RF input / gate bias; internally matched to 50 ohm in typical application |
| Pin 2 | Drain (Output) — RF output / drain bias (VDD); internally matched |
| Pin Flange | Source (Flange) — Source and thermal path; bolts directly to heatsink chassis |
DC Área de funcionamiento seguro (LDMOS, Vdss = 66 V)
Aplicaciones típicas
MRFE6S9135HR5 es adecuado para 6 aplicacións: RFID Reader Transmitter (UHF 900 MHz), Industrial RF Heating / Plasma Generator, UHF Digital TV / DVB-T Exciter, Medical RF Ablation Equipment, Aviation ATC / DME Transponder Driver, Particle Accelerator RF Driver.
RFID Reader Transmitter (UHF 900 MHz)
The MRFE6S9135HR5 is well-suited as the final-stage RF power amplifier in 900 MHz UHF RFID reader transmitters, where regulations (e.g. ETSI EN 302 208, FCC Part 15) cap radiated power to roughly 1-4 W ERP and require high linearity and spectral purity. Its 21 dB gain at 940 MHz and 39 W saturated output provide ample headroom for cascaded PA topologies or for driving high-Power antennas through lossy cables. The device is typically biased in Class AB at 28 V VDD with 1 A quiescent current, balancing linearity for backscatter modulation with DC efficiency. Internal input/output matching simplifies the bill of materials, while the NI-880 flanged package bolts directly to a chassis for sustained CW operation in fixed reader installations at toll gates, warehouses, and access control portals.
Recomendado
Industrial RF Heating / Plasma Generator
At 940 MHz, the MRFE6S9135HR5 delivers the 39 W continuous-wave output required to drive industrial RF heating, drying, and plasma-generation loads. ISM-band equipment in this frequency range operates without individual licensing in many jurisdictions, and the 21 dB gain of the MRFE6S9135HR5 allows a 1-2 W driver stage to reach the 39 W output with minimal cascading. The NI-880 ceramic flange bolts directly to a copper or aluminum heatsink, which is essential because 39 W CW dissipation at typical 55-60% efficiency still requires removing roughly 30 W of heat continuously. The 66 V Vdss rating provides strong margin against supply transients caused by plasma load impedance variations, contributing to long-term reliability in 24/7 production environments.
Recomendado
UHF Digital TV / DVB-T Exciter
The MRFE6S9135HR5 serves as the final RF amplifier in low-power UHF digital video broadcast exciters operating in the 900 MHz region, including DVB-T, DVB-T2, and ATSC repeater applications. Its 39 W saturated output and high linearity in Class AB support the high peak-to-average ratios (PAR > 8 dB) of COFDM modulation, while the LDMOS process provides the gain flatness needed across an 8 MHz channel. Designers typically operate the device below saturation (back-off 2-4 dB) to meet adjacent-channel leakage ratio (ACLR) and error vector magnitude (EVM) masks. The 66 V Vdss rating ensures reliable operation on standard 48 V broadcast amplifier rails. NI-880 flange mounting integrates with existing broadcast amplifier heat-extrusion chassis.
Recomendado
Medical RF Ablation Equipment
Medical RF ablation systems operating in the 900 MHz ISM band use the MRFE6S9135HR5 as a precision RF power source to deliver controlled energy into tissue for surgical ablation procedures. The 39 W output at 940 MHz, combined with 21 dB gain, allows fine-grained power adjustment through analog or PWM modulation of the gate bias. The LDMOS process exhibits low memory effects and predictable gain compression, which is critical for closed-loop power control algorithms used in modern ablation generators. The 66 V Vdss rating provides headroom against the load mismatches created by changing tissue impedance during a procedure. The NI-880 ceramic flanged package mounts to a medical-grade heatsink within the device chassis, supporting the long continuous-on duty cycles required for ablation therapy sessions.
Recomendado
Aviation ATC / DME Transponder Driver
The MRFE6S9135HR5 is used in the final stage of 900 MHz aviation transponder and distance-measurement equipment (DME) interrogators, where it must deliver pulsed RF power at 39 W peak with high reliability. Aviation transponders operate at duty cycles typically below 5%, so the device's pulsed capability allows operation above the CW rating. The 21 dB gain simplifies the driver chain, while the 66 V Vdss rating provides tolerance against antenna mismatch and reflection during ground testing. The rugged NXP LDMOS process can withstand load VSWR up to 10:1 across all phases, which is critical for airborne electronics exposed to varying antenna installations. The NI-880 flange package is widely accepted in avionics RF amplifier assemblies.
Recomendado
Particle Accelerator RF Driver
Scientific particle accelerators operating in the UHF band (e.g. synchrotrons and cyclotrons) use the MRFE6S9135HR5 as a solid-state alternative to tube amplifiers in 900 MHz RF driver chains. Its 39 W CW output and high DC efficiency support the continuous, phase-stable RF drive required for beam acceleration, while LDMOS ruggedness improves mean-time-between-failure compared with tube-based equivalents. The 21 dB gain minimizes stage count, reducing phase noise accumulation along the driver chain. The NI-880 package mounts to water-cooled heatsinks in the accelerator hall environment. NXP's known process consistency helps accelerator engineers maintain predictable RF performance across hundreds of amplifier modules in a single facility.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRFE6S9135HR5 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRFE6S9130HR5 | MRFE6S9140HR5 | MRFE6S9125HR5 | MRFE6S9135NR1 | BLF884P |
|---|---|---|---|---|---|---|
| Package | NI-880H-2L (ceramic flange) | NI-880H-2L - same | NI-880H-2L - same | NI-880H-2L - same | NI-880H-2L - same | NI-880H-2L / SOT502 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Output Power (940 MHz CW) | 39 W | ~30 W | ~47 W | ~25 W | 39 W | ~40 W |
| Power Gain (940 MHz) | 21 dB | 21 dB | 20 dB | 21 dB | 21 dB | 20 dB |
| Drain-Source Voltage (Vdss) | 66 V | 66 V | 66 V | 66 V | 66 V | 50 V |
| Test Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V | 32 V |
| Operating Frequency Range | 900-1000 MHz | 900-1000 MHz | 900-1000 MHz | 900-1000 MHz | 900-1000 MHz | 900-1000 MHz |
Diferenciadores clave
- Balanced 39 W output / 21 dB gain at 940 MHz (frente a MRFE6S9130HR5)
- Single-package scalability within NXP MRFE6 family (frente a MRFE6S9125HR5 / MRFE6S9140HR5)
- Cross-brand second-source availability (frente a BLF884P (Ampleon))
Notas de diseño
The MRFE6S9135HR5 dissipates roughly 25-30 W in continuous 39 W CW operation at 60% efficiency. The NI-880 ceramic flange must be bolted to an aluminum or copper heatsink with thermal compound; PCB copper alone is insufficient. Estimated: at 30 W dissipation and theta_JC of 0.15 C/W (typical for NI-880 per NXP datasheet), the junction-to-flange rise is roughly 4.5 C, so a heatsink with thermal resistance below 0.5 C/W keeps junction temperature below 100 C in a 25 C ambient.
Use a star-grounded PCB layout with separate analog/digital and RF ground pours connecting only at the flange. Place 100 nF and 10 uF decoupling capacitors close to the drain bias feed, and add a 100-ohm ferrite bead in series with VDD to suppress RF leakage into the supply rail. The gate bias line should be heavily bypassed (1 uF + 100 nF) and fed through a separate bias-tee network to prevent RF feedback into the gate bias supply.
Do not exceed 66 V Vdss even transiently - LDMOS avalanche failures are non-recoverable. Do not operate without proper heatsink mounting; even at idle bias the device can thermally runaway if the flange is not bolted to a thermal mass. Finally, never solder leads directly without proper heat-sinking of the leads - the NI-880 package is not designed for hand-soldered reflow without a controlled thermal profile.
Información de cumplimiento
Lead Free per NXP datasheet. RoHS and REACH compliance per NXP product page. AEC-Q100 not applicable - this is a discrete RF power transistor, not an automotive-qualified IC. Conflict-minerals status not explicitly stated in the verified web data; marked unknown pending manufacturer declaration.
