MW7IC2220NR1 - 2W W-CDMA RF LDMOS PA, 2110-2170 MHz, 28V | NXP
N.º de pieza: MW7IC2220NR1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $33.92 | $339,20 |
| 100 | $27.84 | $2.784,00 |
| 500 | $22.16 | $11.080,00 |
| 1.000 | $18.75 | $18.750,00 |
MW7IC2220NR1 Descripción general
An RF power amplifier (RF PA) is the final amplification stage in a wireless transmitter chain, boosting low-level radio signals from the transceiver up to the watt-level power required to drive the antenna, and it directly determines cellular base-station range, linearity, and link budget. Within the transmitter hierarchy, the RF PA sits after the up-conversion mixer and before the duplexer/filter, and it belongs to the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family of high-frequency power transistors that dominate cellular infrastructure below ~3 GHz because of their high gain, high efficiency, and excellent ruggedness. The MW7IC2220NR1 specifically targets the cellular downlink band 2110-2170 MHz, supports W-CDMA, TD-SCDMA and similar modulation formats, and integrates a two-stage amplifier structure in a single die.
Key specifications include 31 dB small-signal gain, 28 V typical drain supply, 300 mA quiescent current (IDQ2), and an operational frequency range from 2000 MHz to 2200 MHz per the manufacturer's wideband test fixture characterization. The on-chip matching allows the part to be used directly in 50 ohm reference designs without external impedance transformation networks, simplifying both the schematic and PCB layout.
Architecturally, the device is a two-stage LDMOS amplifier with internal inter-stage matching and bias networks optimized for W-CDMA linearity. The NXP datasheet specifies ACPR (Adjacent Channel Power Ratio) performance measured under 3.84 MHz channel bandwidth and +/-5 MHz offset in the Freescale 2110-2170 MHz test fixture, with the input signal at 7.5 dB PAR, providing a realistic worst-case linearity reference for system designers.
Typical applications include W-CDMA/TD-SCDMA base-station driver or output stages, 2.1 GHz band pico-cell and femto-cell power amplifiers, repeater and small-cell transmit chains, and general-purpose 2000-2200 MHz RF amplification where high gain and rugged LDMOS performance are required.
When designing with this part, allocate enough PCB copper area under the exposed flange for thermal dissipation and follow the NXP reference layout and bias sequence recommendations. Designers should also respect the absolute maximum drain voltage of 32 V and provide proper sequencing on VGG to prevent device damage during power-up.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design guidance not aggregated on standard catalog listings, helping engineers shorten the BOM-selection cycle for cellular PA designs.
Alternativas directas para MW7IC2220NR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MW7IC2220NR1 (mismo factor de forma y huella) — difiere en Mounting Type, Technology, ACPR Measurement, Frequency Range, Input/Output Matching.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MW7IC2220GNR1
✅ Sustitución directa✓ En stock
$25.1 / unidad
Ver hoja de datos →MW7IC2220NBR1
✅ Sustitución directa✓ En stock
$21.5 / unidad
Ver hoja de datos →AFT27S006N
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MW7IC2725GNR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BLF7G22LS-160
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MW7IC2220NR1 Valores máximos y características eléctricas
| Technology | LDMOS (Laterally Diffused MOSFET) |
| RF Type | W-CDMA / Wideband Integrated Power Amplifier |
| Frequency Range | 2000 MHz to 2200 MHz |
| Operating Band (W-CDMA) | 2110 MHz to 2170 MHz |
| Test Frequency | 2167.5 MHz |
| Output Power (Avg, W-CDMA) | 2 W Avg. |
| Supply Voltage (VDD) | 28 V typical |
| Drain Voltage Rating | 24 V to 32 V operational range |
| Quiescent Current (IDQ1) | 80 mA |
| Quiescent Current (IDQ2) | 300 mA |
| Small-Signal Gain | 31 dB |
| Input/Output Matching | On-chip, 50 ohm nominal |
| Stages | Two-stage integrated amplifier |
| Encapsulado / Carcasa | TO-270-16 Variant, Flat Leads (TO-270WB-16) |
| Tipo de montaje | Surface Mount (with bolted flange/heatsink tab) |
| Temperatura de funcionamiento | -40C to +150C (junction) |
| Packaging | Tape & Reel (R1 suffix) |
| Modulation Formats Supported | W-CDMA, TD-SCDMA, single-carrier W-CDMA |
Configuración de pines de MW7IC2220NR1
| Pin 1 | RF_IN — RF input (50 ohm, on-chip matched) |
| Pin 2 | VGG1 — Gate bias stage 1 |
| Pin 3 | NC — Not connected (per datasheet) |
| Pin 4 | VGG2 — Gate bias stage 2 |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | VDD1 — Drain supply stage 1 (28 V) |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | VDD2 — Drain supply stage 2 (28 V) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | NC — Not connected (per datasheet) |
| Pin 16 | RF_OUT — RF output (50 ohm, on-chip matched) |
Área de funcionamiento seguro (DC) - MW7IC2220NR1
Aplicaciones típicas
MW7IC2220NR1 es adecuado para 6 aplicacións: W-CDMA Small-Cell Base Station, TD-SCDMA Repeater and Booster, Pico-Cell and Femto-Cell Transmit Chain, 2 GHz General RF Amplification, Wireless Backhaul Driver Stage, Multi-Stage Cellular PA Reference Design.
W-CDMA Small-Cell Base Station
The MW7IC2220NR1's 31 dB integrated gain and on-chip 50 ohm matching make it ideal for the final PA stage in 2110-2170 MHz W-CDMA small-cell base stations, where PCB area is constrained and design reuse is critical. The 2 W average output capability covers the typical micro-cell downlink output requirement when paired with external digital predistortion (DPD). Per the NXP MW7IC2220N datasheet, ACPR measured with single-carrier W-CDMA at 7.5 dB PAR remains compliant across the 2110-2170 MHz band, simplifying DPD loop calibration and reducing the time-to-market for small-cell OEMs.
Recomendado
TD-SCDMA Repeater and Booster
The MW7IC2220NR1 is well-matched to TD-SCDMA repeater/booster transmit chains operating in the 2010-2025 MHz uplink and 1900-1920 MHz adjacent bands, thanks to its 2000-2200 MHz broadband match. The TO-270WB-16 flange package allows direct bolting to an aluminum chassis for heatsinking, which is essential when running the device near its 25 W CW P1dB compression point for linearity-critical booster applications. According to the manufacturer datasheet, the device is 100% PAR tested under single-carrier W-CDMA conditions, giving repeater designers confidence in the linearity margin across typical input signals.
Recomendado
Pico-Cell and Femto-Cell Transmit Chain
Inside a femto-cell or pico-cell, the MW7IC2220NR1 can serve as the final PA after the transceiver and DPD block, where its 2 W average W-CDMA output capability matches the typical 100-2000 mW picocell downlink requirement with margin. The two-stage integrated architecture eliminates an external driver stage, reducing the BOM count and shrinking the PCB footprint needed for the RF chain. Engineers can also reuse this part across UMTS, TD-SCDMA, and single-carrier W-CDMA picocells, simplifying platform firmware and hardware variants.
Recomendado
2 GHz General RF Amplification
Beyond cellular standards, the MW7IC2220NR1's broadband on-chip matching and 31 dB gain support laboratory, instrumentation, and RF front-end designs that need high gain at 2-2.2 GHz. Engineers can use it as a general-purpose 2 GHz block amplifier in test sets, RF-over-fiber transmit modules, or driver for higher-power boosters where its 100% PAR tested linearity provides predictable gain versus frequency. Its 25 W typical P1dB makes it easy to operate as a CW amplifier in engineering lab work without the need for a tunable matching network.
Recomendado
Wireless Backhaul Driver Stage
For 2 GHz point-to-point wireless backhaul radios that need a rugged, high-linearity PA driver, the MW7IC2220NR1 provides 2 W average output with 31 dB gain in a flange-mounted TO-270WB-16 package that can be bolted directly to a chassis for thermal performance. The 100% PAR testing for single-carrier W-CDMA per the datasheet demonstrates excellent tolerance to high PAPR signals like those used in OFDM-based backhaul modulation. Designers benefit from the on-chip 50 ohm matching, which simplifies the backhaul system's RF PCB layout and reduces tuning time on the production line.
Recomendado
Multi-Stage Cellular PA Reference Design
The MW7IC2220NR1 is featured in the NXP Cellular Infrastructure Reference Design library as the integrated two-stage driver stage, providing 31 dB of gain ahead of a higher-power final LDMOS FET such as the AFT27S006N or BLF7G22LS-160. This Doherty or class-AB topology reference design enables macro-cell base-station PA designers to leverage the part's on-chip matching and bias sequencing to accelerate their own design cycles. The reference design typically pairs the MW7IC2220NR1 with a digital predistortion (DPD) engine, simplifying the path to production for 4G LTE and 5G NR base-station radio units.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MW7IC2220NR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MW7IC2220GNR1 | MW7IC2220NBR1 | MW7IC2725GNR1 | AFT27S006N | BLF7G22LS-160 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Package | TO-270WB-16 (flat leads) | TO-270WB-16 (flat leads) | TO-270WB-16 (flat leads) | TO-270WB-16 (flat leads) | TO-270WB-16 (flat leads) | TO-270WB-16 (flat leads) |
| Frequency Range | 2000-2200 MHz | 2000-2200 MHz | 2000-2200 MHz | 2500-2700 MHz | 2000-2300 MHz | 2000-2200 MHz |
| Output Power (Avg) | 2 W | 2 W | 2 W | Higher than MW7IC2220NR1 (same die family) | Higher discrete output | Up to 160 W CW (much higher) |
| Drain Voltage (VDD) | 28 V typical | 28 V typical | 28 V typical | 28 V typical | 28 V typical | 28 V typical |
| Small-Signal Gain | 31 dB | 31 dB | 31 dB | Similar (~30 dB) | Lower (single-stage gain) | Lower (discrete gain) |
| Stages | Two-stage integrated | Two-stage integrated | Two-stage integrated | Two-stage integrated | Single-stage discrete | Single-stage discrete |
| On-Chip Matching | Yes (50 ohm) | Yes (50 ohm) | Yes (50 ohm) | Yes (50 ohm) | External matching required | External matching required |
| RF Modulation Support | W-CDMA, TD-SCDMA | W-CDMA, TD-SCDMA | W-CDMA, TD-SCDMA | W-CDMA, TD-LTE | W-CDMA, LTE | W-CDMA, OFDM |
Diferenciadores clave
- Fully integrated two-stage PA with on-chip matching eliminates external matching components (frente a AFT27S006N)
- Optimized for the UMTS 2110-2170 MHz W-CDMA downlink band with 100% PAR testing for linearity (frente a MW7IC2725GNR1)
- Cross-brand 2 GHz LDMOS alternative with much higher power envelope in same TO-270 family (frente a BLF7G22LS-160)
Notas de diseño
Estimated: at 2 W W-CDMA average output with 28 V drain, the LDMOS dissipation reaches several watts continuous, so the TO-270WB-16 back metal MUST be bolted to a heatsink or chassis using thermal compound and a thin washer. Without heatsinking, junction temperature will exceed 150 C and the device will thermally fold back or fail. Provide at least 4 square inches of copper spreader area and a forced-air path during engineering characterization to verify Tj margin.
Place the RF input and RF output traces on a coplanar waveguide with ground (CPWG) stackup using the same dielectric as the rest of the RF chain. Keep DC bias traces (VGG1, VGG2, VDD1, VDD2) routed away from the RF traces to avoid coupling. Follow the NXP MW7IC2220N evaluation board layout 1:1 whenever possible - the on-chip matching is optimized for the reference fixture's PCB stackup, and deviations typically cost 0.5 dB of gain and several points of ACPR.
Do not apply VDD before VGG when powering up - always sequence VGG negative voltage first to avoid forward-biasing the gate-source junction. Never exceed 32 V on VDD per the datasheet absolute maximum rating, and never allow the RF input to be hot while VDD is unpowered because reverse leakage can damage the die. Use a gate-source pull-down resistor on each VGG line so the part defaults to a safe bias state during fault conditions.
Información de cumplimiento
RoHS and lead-free per NXP product environmental documentation. TO-270WB-16 plastic over-mold package is Pb-free reflow compatible. Not AEC-Q100 qualified - this is a cellular infrastructure part. For automotive cellular telematics designs, verify Q100 status with NXP separately.
