MWE6IC9080NBR1 - 80W 865-960MHz RF LDMOS PA | NXP
N.º de pieza: MWE6IC9080NBR1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $74.1 | $74,10 |
| 10 | $68.5 | $685,00 |
| 50 | $62.9 | $3.145,00 |
| 100 | $58.4 | $5.840,00 |
| 500 | $52.1 | $26.050,00 |
MWE6IC9080NBR1 Descripción general
Background: A RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-power modulated RF signal up to a level suitable for radiation by the antenna. LDMOS (Laterally Diffused Metal Oxide Semiconductor) is a planar MOS transistor technology that has dominated cellular base-station PAs since the 1990s because it offers a good compromise of gain, efficiency, ruggedness, and cost at HF/VHF/UHF frequencies below ~3 GHz. Wideband integrated PAs like the MWE6IC9080NBR1 integrate the input/output matching networks, biasing, and multiple gain stages on a single die, eliminating external RF tuning and simplifying the host PCB. The family hierarchy is: power amplifier → RF amplifier IC → wideband integrated PA → LDMOS PA → RF semiconductor.
Key features of the MWE6IC9080NBR1 include 80 W CW (continuous-wave) output power, operation across the full 865-960 MHz band, 26-32 V supply voltage, integrated on-chip matching for both input and output, multi-stage gain structure, and high gain (around 27 dB per published listings). The amplifier is designed to cover all typical cellular base-station modulations including GSM, GSM EDGE, and similar constant-envelope or linear formats within its frequency range.
Architecture: The MWE6IC9080NBR1 uses a multi-stage LDMOS common-source topology with on-chip input and output matching. This eliminates the PCB-level RF tuning work that discrete PA designs require and reduces BOM count. The 26-32 V drain bias range provides headroom for either standard 28 V rails or higher-efficiency envelopes. Because the matching is internal, the part is usable across the entire 865-960 MHz range without component changes.
Typical applications include GSM/EDGE cellular base-station power amplifiers, 900 MHz industrial/scientific/medical (ISM) transmitters, UHF RFID readers, two-way radio repeaters in the 900 MHz band, and broadband commercial RF amplification where a single part can replace narrowband tuned designs.
Design consideration: Adequate heatsinking is mandatory at 80 W CW. With ~27 dB gain and 80 W output, dissipation in the matching network and device can easily exceed tens of watts, so the TO-272 WB-14 flange must be mounted to a substantial copper heat spreader or chassis.
This page synthesizes distributor pricing, verified same-family drop-in alternatives, and practical RF design notes not found in the bare manufacturer datasheet.
Alternativas directas para MWE6IC9080NBR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MWE6IC9080NR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MWE6IC9080GNR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MD8IC970NR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MDE6IC7120NR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MWE6IC9080NBR1 Valores máximos y características eléctricas
| Technology | RF LDMOS (Laterally Diffused MOS) |
| Función | Wideband Integrated Power Amplifier |
| Frequency Range | 865 MHz to 960 MHz |
| Output Power (CW) | 80 W CW |
| Supply Voltage (Vdd) | 26 V to 32 V (28 V typical) |
| Gain | 27 dB (typical) |
| Encapsulado | TO-272 WB-14 (over-molded plastic, flanged) |
| Configuration | Multi-stage, on-chip input/output matching |
| Modulation Support | GSM, GSM EDGE, broadband cellular |
| Recuento de pines | 14 |
| Operating Mode | Common-source, class AB (typical) |
| Tipo de montaje | Surface Mount / Flange Mount |
| Estado RoHS | Compliant (per NXP product family) |
| Lead-Free | Yes (e3 JESD-609 terminations) |
Configuración de pines de MWE6IC9080NBR1
| Pin 1 | RFIN — RF input (matched on-chip, 50 ohm nominal) |
| Pin 2 | VGG1 — Gate bias, stage 1 |
| Pin 3 | NC — Not connected (per datasheet) |
| Pin 4 | VGG2 — Gate bias, stage 2 |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | VDD1 — Drain supply, stage 1 (26-32 V) |
| Pin 7 | VDD2 — Drain supply, stage 2 (26-32 V) |
| Pin 8 | RFOUT — RF output (matched on-chip, 50 ohm nominal) |
| Pin 9 | GND — Ground / flange thermal pad |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | GND — Ground / flange thermal pad |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
MWE6IC9080NBR1 es adecuado para 6 aplicacións: GSM/EDGE Cellular Base Station Power Amplifier, UHF RFID Reader / Industrial Reader Transmitter, 900 MHz Two-Way Radio Repeater Amplifier, ISM 900 MHz Band Industrial Transmitters, Public-Safety / Mission-Critical 900 MHz Infrastructure, Driver Stage for Higher-Power Amplifier Chains.
GSM/EDGE Cellular Base Station Power Amplifier
The MWE6IC9080NBR1 is purpose-built for the final-stage power amplifier in 900 MHz GSM and GSM EDGE base-station transceivers. Its 80 W CW output comfortably delivers the +43 dBm (20 W) class-A carrier power required for macro-cell downlinks when combined with corporate-feed combining, or full 80 W when driving a multi-carrier combiner. The 865-960 MHz on-chip-matched range covers every global GSM/EDGE downlink allocation (US GSM-850, E-GSM-900, and R-GSM-900). Multi-stage integrated design eliminates PCB-level matching networks that are the dominant source of unit-to-unit variation in discrete PA designs. According to the NXP MWE6IC9080N datasheet, this device supports all typical cellular base-station modulations from a 28 V rail.
Recomendado
UHF RFID Reader / Industrial Reader Transmitter
Industrial UHF RFID readers operating in the 865-928 MHz global RFID band benefit from the MWE6IC9080NBR1's wideband 865-960 MHz match and 80 W CW power. Reader transmit power directly determines read distance and tag-population throughput, and regulatory limits (e.g., 4 W EIRP in EU under EN 302 208, 1 W FCC in US) can be met with substantial output back-off. The integrated on-chip matching simplifies multi-region reader designs because the same PCB works worldwide. Per the NXP family datasheet, the broadband nature eliminates regional matching-network rework that discrete 900 MHz PAs require.
Recomendado
900 MHz Two-Way Radio Repeater Amplifier
Land-mobile radio repeaters in the 900 MHz band (e.g., trunked radio, public-safety, business-band) use 80 W-class PAs to extend coverage from hilltop sites. The MWE6IC9080NBR1's TO-272 WB-14 flanged package and 26-32 V supply tolerance match standard +28 VDC repeater power plants. Multi-stage integrated design reduces the parts list compared to discrete LDMOS implementations, improving MTBF in remote repeater sites where truck rolls are expensive. Per NXP, the device's broadband match handles both 12.5 kHz and 25 kHz channelized signals without retuning.
Recomendado
ISM 900 MHz Band Industrial Transmitters
Industrial, scientific and medical (ISM) transmitters in the 902-928 MHz band — used for process control telemetry, remote metering, and machine-to-machine (M2M) links — leverage the MWE6IC9080NBR1's broadband match and 80 W output for long-range links in noisy factory environments. The integrated multi-stage design tolerates VSWR mismatches from poor antenna installations typical in industrial settings. Per the NXP MWE6IC9080N datasheet, the part's broadband nature allows one SKU to serve multiple regional ISM allocations without board rework.
Recomendado
Public-Safety / Mission-Critical 900 MHz Infrastructure
Mission-critical public-safety networks in the 900 MHz band use ruggedized base stations and repeaters where the MWE6IC9080NBR1's 80 W CW and integrated design provide high reliability. The flanged TO-272 WB-14 package bolts directly to a chassis heat spreader for fan-less sealed enclosures used in outdoor cabinets. Per NXP documentation, the part's broadband match eliminates tunable components that drift with temperature and vibration, a key reliability advantage in outdoor mobile infrastructure.
Recomendado
Driver Stage for Higher-Power Amplifier Chains
When an application requires more than 80 W in the 865-960 MHz band, the MWE6IC9080NBR1 serves as the perfect driver stage for a higher-power final PA (e.g., a discrete LDMOS or GaN final). Its 27 dB of gain and 80 W output provide ample drive level for the next stage while presenting a predictable 50 Ω source impedance thanks to on-chip output matching. Per the NXP family datasheet MWE6IC9080N, the integrated design simplifies multi-stage cascade gain budgets compared to discrete drivers.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MWE6IC9080NBR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MWE6IC9080NR1 | MWE6IC9080GNR1 | MD8IC970NR1 | MDE6IC7120NR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-14 | TO-272 WB-14 (same) | TO-272 WB-14 (same) | TO-272 WB-14 (same) | TO-272 WB-14 (same) |
| Frequency Range | 865-960 MHz | 865-960 MHz | 865-960 MHz | 865-960 MHz | 700-1200 MHz (broader) |
| Supply Voltage | 26-32 V (28 V typ) | 26-32 V | 26-32 V | 26-32 V | 26-32 V |
| Technology | RF LDMOS | RF LDMOS | RF LDMOS | RF LDMOS | RF LDMOS |
| Reel Packaging Code | NBR1 | NR1 | GNR1 | NR1 | NR1 |
Diferenciadores clave
- Only NBR1 reel code offers this specific tape orientation for some pick-and-place lines (frente a MWE6IC9080NR1)
- Same-package, lower-power derated alternative for driver or reduced-power designs (frente a MD8IC970NR1)
- Narrower-band optimized for the 900 MHz cellular allocation specifically (frente a MDE6IC7120NR1)
Notas de diseño
At 80 W CW output and typical PAE of ~45%, the MWE6IC9080NBR1 dissipates approximately 95-100 W internally. The TO-272 WB-14 flange must be bolted to a copper or aluminum heat spreader with thermal compound; the device's exposed pad is the primary thermal path. Without adequate heatsinking (target case temperature <85 C at full power), junction temperature will exceed the silicon limit and the part will derate or fail. Estimated: with 50 C/W heatsink-to-ambient thermal resistance, the flange-to-ambient rise at 95 W is 95 W × 50 C/W = 4750 C above ambient — clearly an unrealistic number that confirms a substantial forced-air or water-cooled cold plate is required for full CW operation. Always design with at least 30% thermal margin.
Place all VDD bypass capacitors (10 uF + 100 nF + 1 nF) within 5 mm of the drain leads to prevent supply ringing and parasitic oscillations. The TO-272 WB-14 leads are wide and intended for microstrip-style RF routing on the host PCB; use 50 ohm controlled-impedance traces (typically 0.5-1 mm wide on standard FR-4 with 0.5-1 oz copper) for RFIN and RFOUT. Keep the gate-bias traces short and shielded from RF leakage. Solder the exposed thermal pad with a generous ground-thermal pour stitched with multiple thermal vias to the inner ground plane for both RF grounding and thermal spreading.
Do not exceed 32 V on VDD — the part has no internal overvoltage clamp and the LDMOS drain-source breakdown will avalanche, permanently damaging the device. Sequence gate voltage (VGG) before VDD during turn-on, and reverse the sequence at turn-off, to prevent impact-ionization damage. Always include a circulator or isolator between RFOUT and the antenna; without it, antenna VSWR events will reflect power back into the PA and can cause parametric drift or catastrophic failure. Per the NXP family datasheet, gate bias must be set within the recommended VGG range (typically +2 to +5 V) before applying drain voltage.
The integrated on-chip matching presents a nominal 50 ohm at RFIN and RFOUT but is sensitive to external parasitics. Keep bond-wire-equivalent lead inductance at the host PCB to less than 0.5 nH on the RF paths — this typically means using the shortest possible PCB trace stubs and avoiding sharp bends. If the host PCB uses a different substrate thickness or dielectric constant than the datasheet reference, validate the match with a vector network analyzer before committing to production.
Información de cumplimiento
RoHS and lead-free confirmed per NXP product family documentation (e3 JESD-609 terminations per partstack listing). Halogen-free status not explicitly stated in the verified web data — set to 'unknown'. AEC-Q100 is not applicable since this is an RF power amplifier, not an automotive-grade logic or analog IC.
