NRVBS360BT3G-VF01 - 60V 4A SMB Schottky Rectifier | onsemi
N.º de pieza: NRVBS360BT3G-VF01 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.45 | $0,45 |
| 10 | $0.4 | $4,00 |
| 100 | $0.34 | $34,00 |
| 500 | $0.28 | $140,00 |
| 1.000 | $0.24 | $240,00 |
| 2.500 | $0.21 | $525,00 |
NRVBS360BT3G-VF01 Descripción general
A Schottky diode is a unipolar semiconductor device formed by a metal-semiconductor junction that produces a low forward voltage drop and very fast switching speed, eliminating minority-carrier storage charge. Compared with standard p-n junction rectifiers, Schottky rectifiers exhibit forward voltages typically 0.3-0.5 V lower and reverse recovery times effectively zero, which is critical for high-frequency switch-mode power supplies, freewheeling functions, and polarity protection. The NRVBS360BT3G-VF01 sits within the broader power diode taxonomy: Schottky rectifier -> power rectifier -> discrete semiconductor -> semiconductor device.
Key electrical features include a 60 V repetitive peak reverse voltage (VRRM), 4 A average forward rectified current at TL = 110 °C, and a typical forward voltage drop of approximately 0.5 V at 3 A. The device is rated for non-repetitive peak forward surge current IFSM up to 100 A (8.3 ms half-sine), with an operating junction temperature range of -65 °C to +175 °C. The SMB package is fully RoHS-compliant and supplied on tape-and-reel for high-volume SMT assembly.
Design considerations for this part include thermal management at high average currents, ensuring the SMB land pattern uses sufficient copper pour to keep the junction below 150 °C, and verifying that the 60 V rating provides adequate derating margin for 24 V and 48 V automotive bus transients. Because it is a Schottky part, the user should pay attention to the reverse leakage current at high temperature, which can rise into the milliampere range and may affect efficiency in low-current battery circuits.
Typical applications include automotive freewheeling diodes for solenoids and motor drives, OR-ing diodes in redundant power systems, polarity protection in 12 V/24 V industrial and automotive subsystems, switching power supply output rectification, and DC-DC converter high-side/low-side rectification. The automotive NRV qualification makes it suitable for AEC-Q automotive power designs.
When designing with this diode, ensure the PCB land pattern matches the SMB (DO-214AA) standard and that thermal vias under the cathode tab are used to spread heat into the inner copper layers. Avoid exceeding the 4 A average rectified current rating unless the mounting pad is enlarged to compensate for higher thermal resistance.
This page synthesizes distributor pricing, AEC-Q cross-reference alternatives, and practical design notes not available from the full PDF datasheet alone, helping automotive and industrial power designers select the correct drop-in alternative for the NRVBS360BT3G-VF01.
Alternativas directas para NRVBS360BT3G-VF01 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MBRS360BT3G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
NRVBS360BNT3G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
NRVBS360T3G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SKH36BHE3TRTB
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SKH36BTRTB
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
NRVBS360BT3G-VF01 Valores máximos y características eléctricas
| Diode Type | Schottky Power Rectifier |
| Encapsulado | SMB (DO-214AA) |
| Repetitive Peak Reverse Voltage (VRRM) | 60 V |
| Average Rectified Forward Current (IF(AV)) | 4 A (at TL = 110 °C) |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 100 A (8.3 ms half-sine) |
| Rango de temperatura de unión de funcionamiento | -65 °C to +175 °C |
| Storage Temperature Range | -65 °C to +175 °C |
| Tipo de montaje | Surface Mount |
| Configuration | Single |
| Automotive Grade (NRV prefix) | Yes - automotive qualified |
| Lead-Free / RoHS Status | Compliant |
| Nivel MSL | 1 |
| Supplier Device Package | SMB |
| Technology | Schottky Barrier, epitaxial construction with oxide passivation and metal overlay |
Configuración de pines de NRVBS360BT3G-VF01
| Pin 1 | Cathode (K) — Cathode terminal (marked with band on package body) |
| Pin 2 | Anode (A) — Anode terminal |
Aplicaciones típicas
NRVBS360BT3G-VF01 es adecuado para 6 aplicacións: Automotive Freewheeling Diode, OR-ing Diode in Redundant Power Systems, Polarity Protection in 12V/24V Subsystems, Switch-Mode Power Supply Output Rectifier, DC-DC Converter High-Side/Low-Side Rectification, Solar Charge Controller Blocking Diode.
Automotive Freewheeling Diode
The NRVBS360BT3G-VF01 is well suited as a freewheeling diode across automotive inductive loads such as solenoids, relays, and small DC motor windings. Its 60 V VRRM comfortably exceeds the typical 12 V or 24 V automotive bus plus inductive kick transients, while the 4 A average forward current rating handles the recirculation current of most automotive actuators. The Schottky Barrier technology provides near-zero reverse recovery time, eliminating switching losses and shoot-through risk in PWM-driven solenoid and motor control circuits. Housed in the compact SMB (DO-214AA) package, it fits directly on the PCB adjacent to the switching transistor, minimizing loop inductance. The NRV automotive qualification ensures the part survives underhood thermal cycling, vibration, and extended reliability stress. Designers should add thermal vias under the cathode tab to spread heat into inner copper layers and keep Tj below 150 °C at peak recirculation current.
Recomendado
OR-ing Diode in Redundant Power Systems
The NRVBS360BT3G-VF01 can be used as an OR-ing diode in redundant 12 V or 24 V automotive/industrial power architectures where two supplies must be combined without cross-conduction. Its low forward voltage drop (~0.5 V typical at 3 A) limits conduction loss compared with standard p-n rectifiers, while the 4 A current rating covers most low-to-medium power rail-sharing applications. The 60 V VRRM provides significant margin above 24 V industrial rails, allowing safe operation during transient overvoltages. Schottky Barrier construction means there is no reverse recovery charge, eliminating the switching noise that p-n OR-ing diodes introduce when supplies switch over. The SMB package supports compact PCB layouts in space-constrained telecom or industrial backup power modules. Designers should derate forward current to 2-3 A continuous for reliable long-term operation and add input fuse protection for fault isolation.
Recomendado
Polarity Protection in 12V/24V Subsystems
The NRVBS360BT3G-VF01 is widely deployed as a reverse-battery polarity protection diode at the input of automotive and industrial 12 V/24 V subsystems. Placed in series with the supply rail, it blocks current flow if the battery is connected backwards, protecting downstream ECUs, sensors, and power converters from catastrophic damage. The 60 V reverse rating handles jump-start and load-dump transients, while the 4 A continuous forward rating covers most accessory loads. Schottky technology gives a forward drop approximately 0.3 V lower than standard p-n diodes, reducing continuous power loss versus a conventional rectifier. The SMB (DO-214AA) package handles the steady-state dissipation of a series polarity-protection diode at moderate currents. Designers should consider the IRMS loss budget: at 3 A the part dissipates ~1.5 W, so PCB copper pour is required for thermal management.
Recomendado
Switch-Mode Power Supply Output Rectifier
In low-voltage switch-mode power supplies (SMPS) such as 12 V to 3.3 V/5 V buck converters, the NRVBS360BT3G-VF01 can be used as a secondary-side rectifier or freewheeling element for moderate-power designs. Its Schottky technology eliminates reverse recovery charge, which is critical in high-frequency PWM converters where p-n rectifier switching losses would dominate efficiency. The 60 V rating suits 12 V and 24 V input rails with substantial transient margin, and the 4 A average forward current covers most sub-50 W converter outputs. Compared with ultrafast recovery rectifiers, the Schottky part delivers lower conduction loss and simpler drive. The SMB package is footprint-compatible with most standard SMPS rectifier layouts. Designers should ensure the switching frequency is high enough to make the Schottky advantage worthwhile (typically above 50 kHz) and check that the surge current IFSM of 100 A covers converter inrush.
Recomendado
DC-DC Converter High-Side/Low-Side Rectification
The NRVBS360BT3G-VF01 serves as a high-side or low-side rectifier in non-isolated buck, boost, and buck-boost DC-DC converter topologies operating from 12 V or 24 V inputs. Its Schottky construction provides near-zero reverse recovery time, eliminating the dead-time losses that plague p-n diode synchronous-rectifier alternatives in PWM converters. The 4 A average forward current rating matches most point-of-load (POL) converters and small motor-drive DC-DC stages. With VRRM = 60 V, the part handles 24 V industrial bus transients and 24 V automotive load-dump events within derated limits. The SMB package allows tight layout next to the switching MOSFET or controller, minimizing parasitic inductance. The NRV automotive screening makes this part especially attractive for AEC-Q automotive DC-DC converters powering sensors and ADAS peripherals.
Recomendado
Solar Charge Controller Blocking Diode
The NRVBS360BT3G-VF01 can be used as a blocking diode in low-power solar charge controllers, preventing reverse current flow from the battery back into the photovoltaic panel at night. Its 60 V reverse rating exceeds the open-circuit voltage of most 12 V and 24 V solar panel strings (typically 22 V or 44 V Voc), and the 4 A rating handles small off-grid solar installations up to ~50 W. The Schottky Barrier construction provides a forward drop of ~0.5 V at moderate current, which is critical in solar applications where every millivolt of conduction loss reduces charging efficiency. The SMB package is small enough for compact charge controller PCBs. Designers should note that reverse leakage current at elevated temperatures can reach mA levels, which is acceptable for solar but should be considered for low-power MPPT designs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para NRVBS360BT3G-VF01 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MBRS360BT3G | NRVBS360BNT3G | NRVBS360T3G | SKH36BHE3TRTB | SKH36BTRTB |
|---|---|---|---|---|---|---|
| Package | SMB (DO-214AA) | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same |
| Brand | onsemi | onsemi | onsemi | onsemi | Vishay (Fagor) | Vishay (Fagor) |
| Repetitive Peak Reverse Voltage (VRRM) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
| Pin-Compatible Drop-In | — | Yes (commercial only) | Yes (identical automotive) | Yes (commercial only) | Yes (cross-brand) | Yes (cross-brand) |
Diferenciadores clave
- Higher continuous forward current (4 A) compared to MBRS360BT3G (3 A) (frente a MBRS360BT3G)
- Automotive-grade NRV qualification (frente a MBRS360BT3G / NRVBS360T3G)
- Wide -65 °C to +175 °C junction temperature range (frente a SKH36BHE3TRTB / SKH36BTRTB)
Notas de diseño
At 4 A continuous forward current, the NRVBS360BT3G-VF01 dissipates approximately 2 W (assuming VF ≈ 0.5 V). The SMB package thermal resistance is typically 11 °C/W junction-to-lead, requiring the PCB land pattern to provide adequate heat spreading. Use at least 1 square inch of 2 oz copper pour on the cathode pad, plus thermal vias to inner copper layers, to keep junction temperature below 150 °C at full load. For higher currents above 4 A, derate the part or add external heatsinking. Estimated: Pdiss = IF × VF = 4 A × 0.5 V = 2 W; with PCB copper, theta_JA drops to ~25 °C/W from ~55 °C/W on minimum pad.
Use the JEDEC-standard SMB (DO-214AA) land pattern. The cathode pad should be larger than the anode pad, and both pads must be solder-wetted to the full package footprint to ensure proper mechanical strength and thermal path. Add thermal vias (typically 4-6, 0.3 mm diameter) under the cathode pad to conduct heat into inner copper planes. Avoid running high-current traces under the package body to prevent stress on the solder leads.
Do not exceed the 60 V VRRM rating, including inductive transients in freewheeling applications. Schottky reverse leakage current can rise sharply with temperature and voltage - at 60 V and 125 °C junction, leakage may reach several mA, which can be significant in low-current battery-powered circuits. The NRV prefix denotes automotive qualification - do not substitute commercial MBRS-prefixed parts in AEC-Q designs. Always verify pin orientation: the cathode band on the package body must be matched to the schematic, and reversed polarity will short-circuit the supply through the low forward drop.
In high-frequency switching applications (above 100 kHz), the SMB package lead inductance (~5-10 nH per lead) may introduce ringing on the diode switching waveform. Minimize the PCB loop area between the diode and the switching transistor, and add a small RC snubber (10-100 ohm + 1-10 nF) across the diode if ringing exceeds the VRRM rating. The Schottky technology eliminates reverse recovery charge, but the junction capacitance (~200-500 pF at 4 V reverse) can introduce switching losses at very high frequencies above 1 MHz.
Información de cumplimiento
NRV prefix denotes onsemi's automotive-grade screening. RoHS and REACH compliant per onsemi product page. Halogen-free per SMB family datasheet. Not applicable to AEC-Q100 specifically (Schottky diode, not IC); use AEC-Q101/Q200 context.